NO842614L - Halvleder-innretning og anvendelse av pniktid-rike lag paa halvledere - Google Patents
Halvleder-innretning og anvendelse av pniktid-rike lag paa halvledereInfo
- Publication number
- NO842614L NO842614L NO842614A NO842614A NO842614L NO 842614 L NO842614 L NO 842614L NO 842614 A NO842614 A NO 842614A NO 842614 A NO842614 A NO 842614A NO 842614 L NO842614 L NO 842614L
- Authority
- NO
- Norway
- Prior art keywords
- semiconductor device
- semiconductor
- pnictide
- layer
- iii
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/509,210 US4567503A (en) | 1983-06-29 | 1983-06-29 | MIS Device employing elemental pnictide or polyphosphide insulating layers |
| US58111584A | 1984-02-17 | 1984-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO842614L true NO842614L (no) | 1985-01-02 |
Family
ID=27056471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO842614A NO842614L (no) | 1983-06-29 | 1984-06-28 | Halvleder-innretning og anvendelse av pniktid-rike lag paa halvledere |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0132326A3 (da) |
| KR (1) | KR850000780A (da) |
| AU (1) | AU2992784A (da) |
| DK (1) | DK317584A (da) |
| IL (1) | IL72244A (da) |
| NO (1) | NO842614L (da) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247349A (en) * | 1982-11-16 | 1993-09-21 | Stauffer Chemical Company | Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure |
| US4696828A (en) * | 1984-02-17 | 1987-09-29 | Stauffer Chemical Company | Passivation of InP by plasma deposited phosphorus |
| FR2596581B1 (fr) * | 1986-03-27 | 1988-07-08 | Lyon Ecole Centrale | Procede de passivation en surface d'un substrat en phosphure d'indium et produit nouveau obtenu |
| JPH088265B2 (ja) * | 1988-09-13 | 1996-01-29 | 株式会社東芝 | 化合物半導体装置とその製造方法 |
| DE69014359T2 (de) * | 1989-03-24 | 1995-05-24 | Ibm | Halbleitervorrichtung mit einem relativ zu einem vergrabenen Subkollektor selbstausgerichteten Kontakt. |
| KR101037315B1 (ko) * | 2010-12-07 | 2011-05-26 | 주식회사 경동홀딩스 | 연탄벌크 파레타이저 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4509066A (en) * | 1983-06-29 | 1985-04-02 | Stauffer Chemical Company | Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom |
| AU553091B2 (en) * | 1981-12-30 | 1986-07-03 | Stauffer Chemical Company | High phosphorus pholyphosphides |
| JPS5988830A (ja) * | 1982-11-10 | 1984-05-22 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 化合物半導体基板表面上にパッシベーション層を形成する方法 |
| AU2993384A (en) * | 1983-06-29 | 1986-01-02 | Stauffer Chemical Company | Preparation of polyphosphides using potassium graphite intercalate |
-
1984
- 1984-06-27 AU AU29927/84A patent/AU2992784A/en not_active Abandoned
- 1984-06-27 IL IL72244A patent/IL72244A/xx not_active IP Right Cessation
- 1984-06-28 EP EP84304427A patent/EP0132326A3/en not_active Withdrawn
- 1984-06-28 NO NO842614A patent/NO842614L/no unknown
- 1984-06-28 DK DK317584A patent/DK317584A/da not_active Application Discontinuation
- 1984-06-29 KR KR1019840003736A patent/KR850000780A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| IL72244A (en) | 1988-03-31 |
| EP0132326A2 (en) | 1985-01-30 |
| KR850000780A (ko) | 1985-03-09 |
| DK317584A (da) | 1984-12-30 |
| IL72244A0 (en) | 1984-10-31 |
| AU2992784A (en) | 1985-01-03 |
| DK317584D0 (da) | 1984-06-28 |
| EP0132326A3 (en) | 1986-11-26 |
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