NO842614L - Halvleder-innretning og anvendelse av pniktid-rike lag paa halvledere - Google Patents

Halvleder-innretning og anvendelse av pniktid-rike lag paa halvledere

Info

Publication number
NO842614L
NO842614L NO842614A NO842614A NO842614L NO 842614 L NO842614 L NO 842614L NO 842614 A NO842614 A NO 842614A NO 842614 A NO842614 A NO 842614A NO 842614 L NO842614 L NO 842614L
Authority
NO
Norway
Prior art keywords
semiconductor device
semiconductor
pnictide
layer
iii
Prior art date
Application number
NO842614A
Other languages
English (en)
Norwegian (no)
Inventor
John Andrew Baumann
Diego Jose Olego
Rozalie Schachter
Harvey Bruce Serreze
William Edward Spicer
Paul Mordecai Raccah
Original Assignee
Stauffer Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/509,210 external-priority patent/US4567503A/en
Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co
Publication of NO842614L publication Critical patent/NO842614L/no

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
NO842614A 1983-06-29 1984-06-28 Halvleder-innretning og anvendelse av pniktid-rike lag paa halvledere NO842614L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/509,210 US4567503A (en) 1983-06-29 1983-06-29 MIS Device employing elemental pnictide or polyphosphide insulating layers
US58111584A 1984-02-17 1984-02-17

Publications (1)

Publication Number Publication Date
NO842614L true NO842614L (no) 1985-01-02

Family

ID=27056471

Family Applications (1)

Application Number Title Priority Date Filing Date
NO842614A NO842614L (no) 1983-06-29 1984-06-28 Halvleder-innretning og anvendelse av pniktid-rike lag paa halvledere

Country Status (6)

Country Link
EP (1) EP0132326A3 (da)
KR (1) KR850000780A (da)
AU (1) AU2992784A (da)
DK (1) DK317584A (da)
IL (1) IL72244A (da)
NO (1) NO842614L (da)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4696828A (en) * 1984-02-17 1987-09-29 Stauffer Chemical Company Passivation of InP by plasma deposited phosphorus
FR2596581B1 (fr) * 1986-03-27 1988-07-08 Lyon Ecole Centrale Procede de passivation en surface d'un substrat en phosphure d'indium et produit nouveau obtenu
JPH088265B2 (ja) * 1988-09-13 1996-01-29 株式会社東芝 化合物半導体装置とその製造方法
DE69014359T2 (de) * 1989-03-24 1995-05-24 Ibm Halbleitervorrichtung mit einem relativ zu einem vergrabenen Subkollektor selbstausgerichteten Kontakt.
KR101037315B1 (ko) * 2010-12-07 2011-05-26 주식회사 경동홀딩스 연탄벌크 파레타이저

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509066A (en) * 1983-06-29 1985-04-02 Stauffer Chemical Company Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom
AU553091B2 (en) * 1981-12-30 1986-07-03 Stauffer Chemical Company High phosphorus pholyphosphides
JPS5988830A (ja) * 1982-11-10 1984-05-22 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 化合物半導体基板表面上にパッシベーション層を形成する方法
AU2993384A (en) * 1983-06-29 1986-01-02 Stauffer Chemical Company Preparation of polyphosphides using potassium graphite intercalate

Also Published As

Publication number Publication date
IL72244A (en) 1988-03-31
EP0132326A2 (en) 1985-01-30
KR850000780A (ko) 1985-03-09
DK317584A (da) 1984-12-30
IL72244A0 (en) 1984-10-31
AU2992784A (en) 1985-01-03
DK317584D0 (da) 1984-06-28
EP0132326A3 (en) 1986-11-26

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