NO854931L - Termoelektrisk legering og anvendelse av denne. - Google Patents
Termoelektrisk legering og anvendelse av denne.Info
- Publication number
- NO854931L NO854931L NO854931A NO854931A NO854931L NO 854931 L NO854931 L NO 854931L NO 854931 A NO854931 A NO 854931A NO 854931 A NO854931 A NO 854931A NO 854931 L NO854931 L NO 854931L
- Authority
- NO
- Norway
- Prior art keywords
- thermoelectric
- electrical
- type
- alloy
- lead
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 66
- 239000000956 alloy Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002019 doping agent Substances 0.000 claims abstract description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 6
- 239000002737 fuel gas Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052718 tin Inorganic materials 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB848431071A GB8431071D0 (en) | 1984-12-08 | 1984-12-08 | Alloys |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO854931L true NO854931L (no) | 1986-06-09 |
Family
ID=10570921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO854931A NO854931L (no) | 1984-12-08 | 1985-12-06 | Termoelektrisk legering og anvendelse av denne. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4711971A (de) |
| EP (1) | EP0185499A3 (de) |
| JP (1) | JPS61149453A (de) |
| AU (1) | AU578398B2 (de) |
| CA (1) | CA1266770A (de) |
| FI (1) | FI854852L (de) |
| GB (1) | GB8431071D0 (de) |
| NO (1) | NO854931L (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3784705T2 (de) * | 1986-10-24 | 1993-06-17 | Anritsu Corp | Mit einem duennschichtleiter versehener elektrischer widerstand und kraftsensor. |
| JPS63285923A (ja) * | 1987-05-19 | 1988-11-22 | Komatsu Denshi Kinzoku Kk | シリコン−ゲルマニウム合金の製造方法 |
| US5449602A (en) * | 1988-01-13 | 1995-09-12 | Amoco Corporation | Template-directed photoligation |
| US5981417A (en) * | 1998-03-18 | 1999-11-09 | Phillips Petroleum Company | Method of making an improved catalyst containing an acid-treated zeolite, a boron component, and a zinc component, a product from such method, and the use thereof in the conversion of hydrocarbons |
| CN1130308C (zh) * | 1998-11-26 | 2003-12-10 | 信越半导体株式会社 | 硅锗晶体 |
| US6166317A (en) * | 1999-02-18 | 2000-12-26 | Volk, Jr.; Joseph A. | Cryogenic thermoelectric generator |
| WO2000054343A1 (fr) * | 1999-03-10 | 2000-09-14 | Sumitomo Special Metals Co., Ltd. | Materiau de conversion thermoelectrique et procede de production associe |
| EP1083610A4 (de) * | 1999-03-10 | 2007-02-21 | Neomax Co Ltd | Thermoelektrisches umwandlungsmaterial und herstellungsverfahren dafür |
| US6271459B1 (en) * | 2000-04-26 | 2001-08-07 | Wafermasters, Inc. | Heat management in wafer processing equipment using thermoelectric device |
| JP3952354B2 (ja) * | 2000-06-01 | 2007-08-01 | 信越半導体株式会社 | SiGe結晶およびその製造方法 |
| US7880079B2 (en) * | 2005-07-29 | 2011-02-01 | The Boeing Company | Dual gap thermo-tunneling apparatus and methods |
| KR20110102693A (ko) * | 2010-03-11 | 2011-09-19 | 삼성전자주식회사 | 빈 격자 클러스터가 형성된 열전체를 포함하는 열전 소자 |
| DE102012017556A1 (de) * | 2011-09-08 | 2013-03-14 | Hitachi Chemical Co., Ltd. | Thermoelektrisches konvertermodul und herstellungsverfahren dafür |
| US9624786B2 (en) | 2013-03-15 | 2017-04-18 | Rolls-Royce Corporation | Braze materials and method for joining of ceramic matrix composites |
| US20140360546A1 (en) * | 2013-06-08 | 2014-12-11 | Alphabet Energy, Inc. | Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same |
| US10947162B2 (en) | 2017-04-13 | 2021-03-16 | Rolls-Royce Corporation | Braze alloys for joining or repairing ceramic matrix composite (CMC) components |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3007988A (en) * | 1960-03-29 | 1961-11-07 | Gen Electric | Thermocouple system |
| US3081361A (en) * | 1961-06-09 | 1963-03-12 | Monsanto Chemicals | Thermoelectricity |
| US3298777A (en) * | 1961-12-12 | 1967-01-17 | Du Pont | Thermoelectric compositions of nbxta1-xsiyge2-y |
| DE1194937B (de) * | 1962-08-22 | 1965-06-16 | Bosch Gmbh Robert | Halbleitermischkristall zur Verwendung als Schenkel thermoelektrisch wirkender Elemente |
| US3164892A (en) * | 1962-11-27 | 1965-01-12 | Gen Instrument Corp | Thermoelectric body and method of making same |
| US3208947A (en) * | 1963-09-13 | 1965-09-28 | Du Pont | Thermoelectric compositions and methods of preparing same |
| US3782927A (en) * | 1971-08-24 | 1974-01-01 | M Nicolaou | Material for direct thermoelectric energy conversion with a high figure of merit |
-
1984
- 1984-12-08 GB GB848431071A patent/GB8431071D0/en active Pending
-
1985
- 1985-12-05 US US06/805,507 patent/US4711971A/en not_active Expired - Fee Related
- 1985-12-06 AU AU50882/85A patent/AU578398B2/en not_active Ceased
- 1985-12-06 NO NO854931A patent/NO854931L/no unknown
- 1985-12-06 CA CA000497017A patent/CA1266770A/en not_active Expired - Lifetime
- 1985-12-09 FI FI854852A patent/FI854852L/fi not_active IP Right Cessation
- 1985-12-09 JP JP60276672A patent/JPS61149453A/ja active Pending
- 1985-12-09 EP EP85308940A patent/EP0185499A3/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US4711971A (en) | 1987-12-08 |
| FI854852A0 (fi) | 1985-12-09 |
| JPS61149453A (ja) | 1986-07-08 |
| AU578398B2 (en) | 1988-10-20 |
| EP0185499A3 (de) | 1988-02-24 |
| EP0185499A2 (de) | 1986-06-25 |
| GB8431071D0 (en) | 1985-01-16 |
| AU5088285A (en) | 1986-06-12 |
| FI854852A7 (fi) | 1986-06-09 |
| FI854852L (fi) | 1986-06-09 |
| CA1266770A (en) | 1990-03-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO854931L (no) | Termoelektrisk legering og anvendelse av denne. | |
| Li et al. | Enhanced thermoelectric performance of n-type bismuth-telluride-based alloys via In alloying and hot deformation for mid-temperature power generation | |
| Rosi et al. | Materials for thermoelectric refrigeration | |
| Aoyama et al. | Doping effects on thermoelectric properties of higher manganese silicides (HMSs, MnSi1. 74) and characterization of thermoelectric generating module using p-type (Al, Ge and Mo)-doped HMSs and n-type Mg2Si0. 4Sn0. 6 legs | |
| US6942728B2 (en) | High performance p-type thermoelectric materials and methods of preparation | |
| EP0712537B1 (de) | Thermoelektrische materialien mit höherer leistung und herstellungsverfahren | |
| US7326851B2 (en) | Pb-Ge-Te-compounds for thermoelectric generators or Peltier arrangements | |
| Goetzberger et al. | Photovoltaic materials, past, present, future | |
| Nemoto et al. | Power generation characteristics of Mg2Si uni-leg thermoelectric generator | |
| JP5468554B2 (ja) | 熱電応用のためのドープテルル化スズを含む半導体材料 | |
| CN102412315A (zh) | 单结cigs/cis太阳能电池模块 | |
| US5575862A (en) | Polycrystalline silicon photoelectric conversion device and process for its production | |
| Hedegaard et al. | Functionally graded (PbTe) 1–x (SnTe) x thermoelectrics | |
| US20070227577A1 (en) | Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements | |
| US3782927A (en) | Material for direct thermoelectric energy conversion with a high figure of merit | |
| US20080060693A1 (en) | Thermoelectric Material Contact | |
| US20020044877A1 (en) | Process for producing thermoelectric material | |
| JP6473068B2 (ja) | 熱電変換材料および熱電変換素子 | |
| US2990439A (en) | Thermocouples | |
| AU621112B2 (en) | Method for doping a melt and crystals grown therefrom | |
| Nemoto et al. | Characteristics of a pin–fin structure thermoelectric uni-leg device using a commercial n-type Mg2Si source | |
| Huang et al. | The Crystal Structures and Thermoelectric Properties of Ag-doped Mg2Sn | |
| Goldsmid | Timeliness in the development of thermoelectric cooling | |
| US3460996A (en) | Thermoelectric lead telluride base compositions and devices utilizing them | |
| US6677515B2 (en) | High performance thermoelectric material and method of fabrication |