NO953464L - Fremgangsmåte for fremstilling av et substramateriale for solceller - Google Patents

Fremgangsmåte for fremstilling av et substramateriale for solceller

Info

Publication number
NO953464L
NO953464L NO953464A NO953464A NO953464L NO 953464 L NO953464 L NO 953464L NO 953464 A NO953464 A NO 953464A NO 953464 A NO953464 A NO 953464A NO 953464 L NO953464 L NO 953464L
Authority
NO
Norway
Prior art keywords
silicon
solar cells
rod
preparing
solar cell
Prior art date
Application number
NO953464A
Other languages
English (en)
Other versions
NO953464D0 (no
Inventor
Susumu Sakaguchi
Shigeru Arai
Jun Ozaki
Teruhiko Hirasawa
Tadashi Kamioka
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of NO953464D0 publication Critical patent/NO953464D0/no
Publication of NO953464L publication Critical patent/NO953464L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Fremstillingsprosessen for en krystallinsk silisium- halvlederstav forenkles slik at man begrenser kostnader. for tilførsel av rimelig krystallinske silisiumsub- strater for solceller slik at kostnadene ved solceller ved å anvende de samme i stor grad kan reduseres. Solcellene er kjennetegnet ved anvendelse av et silisiumkrystallsubstrat oppnådd ved umiddelbar ensrettet størkning av en smelte av metallisk silisium, fremstilt ved reduksjon av silikastein i en elektrisk masovn med karbon, i en ildfast søyleformet beholder til en polykrystallinsk silisiumstav som blir utsatt for en behandling ved FZ-metoden slik at den blir meget ren og gir en silisiumstav som blir mekanisk bearbeidet til silisiumplater som tjener som substrat i solceller.
NO953464A 1994-09-05 1995-09-04 Fremgangsmåte for fremstilling av et substramateriale for solceller NO953464L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6210982A JPH0873297A (ja) 1994-09-05 1994-09-05 太陽電池用基板材料の製法とこれを用いた太陽電池

Publications (2)

Publication Number Publication Date
NO953464D0 NO953464D0 (no) 1995-09-04
NO953464L true NO953464L (no) 1996-03-06

Family

ID=16598355

Family Applications (1)

Application Number Title Priority Date Filing Date
NO953464A NO953464L (no) 1994-09-05 1995-09-04 Fremgangsmåte for fremstilling av et substramateriale for solceller

Country Status (3)

Country Link
EP (1) EP0704559A1 (no)
JP (1) JPH0873297A (no)
NO (1) NO953464L (no)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4607304B2 (ja) * 2000-09-26 2011-01-05 信越半導体株式会社 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
JP2009023851A (ja) * 2007-07-17 2009-02-05 Sumco Corp シリコン単結晶製造用原料の製造方法およびシリコン単結晶の製造方法
MY143807A (en) 2007-09-13 2011-07-15 Silicium Becancour Inc Process for the production of medium and high purity silicon from metallurgical grade silicon
DE102008054519A1 (de) * 2008-12-11 2010-06-17 Wacker Chemie Ag Polykristallines germaniumlegiertes Silicium und ein Verfahren zu seiner Herstellung
JP5406126B2 (ja) 2010-06-09 2014-02-05 株式会社岡本工作機械製作所 インゴットブロックの複合面取り加工装置および加工方法
IN2015DN01821A (no) 2012-08-09 2015-05-29 Shinetsu Chemical Co
JP5935021B2 (ja) * 2015-02-20 2016-06-15 蒲池　豊 シリコン結晶の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048114A1 (de) * 1980-12-19 1982-07-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zum tiegelfreien zonenschmelzen
DE3220284A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
DE3220340A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
DE3220338A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
DE3220343A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner siliciumstaebe
DE3611950A1 (de) * 1986-04-09 1987-10-22 Siemens Ag Verfahren zum abtrennen von festen raktionsprodukten, wie kohlenstoff, aus carbothermisch erzeugtem silizium
US4921026A (en) * 1988-06-01 1990-05-01 Union Carbide Chemicals And Plastics Company Inc. Polycrystalline silicon capable of yielding long lifetime single crystalline silicon
DE69120326T2 (de) * 1990-03-30 1996-12-12 Sumitomo Sitix Corp Verfahren zur Herstellung eines Siliziumeinkristalles
US5080726A (en) * 1990-05-31 1992-01-14 The United States Of America As Represented By The Administrator Of The National Aeornautics And Space Administration Directional solidification processing of alloys using an applied electric field

Also Published As

Publication number Publication date
EP0704559A1 (en) 1996-04-03
NO953464D0 (no) 1995-09-04
JPH0873297A (ja) 1996-03-19

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