NO954863L - Halvlederanordning for höytålespenning - Google Patents
Halvlederanordning for höytålespenningInfo
- Publication number
- NO954863L NO954863L NO954863A NO954863A NO954863L NO 954863 L NO954863 L NO 954863L NO 954863 A NO954863 A NO 954863A NO 954863 A NO954863 A NO 954863A NO 954863 L NO954863 L NO 954863L
- Authority
- NO
- Norway
- Prior art keywords
- voltage
- mesaspor
- underlying
- semiconductor device
- junction
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5130649A JPH06342902A (ja) | 1993-06-01 | 1993-06-01 | 高耐圧半導体装置 |
| PCT/JP1994/000884 WO1994028586A1 (fr) | 1993-06-01 | 1994-06-01 | Dispositif a semi-conducteur ayant une resistance elevee a la rupture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO954863D0 NO954863D0 (no) | 1995-11-30 |
| NO954863L true NO954863L (no) | 1996-01-19 |
Family
ID=15039305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO954863A NO954863L (no) | 1993-06-01 | 1995-11-30 | Halvlederanordning for höytålespenning |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5900651A (fr) |
| EP (1) | EP0702412A4 (fr) |
| JP (1) | JPH06342902A (fr) |
| CA (1) | CA2164339A1 (fr) |
| NO (1) | NO954863L (fr) |
| WO (1) | WO1994028586A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10044960B4 (de) * | 2000-09-12 | 2006-05-18 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines Leistungshalbleiterbauelements |
| FR2956923A1 (fr) * | 2010-03-01 | 2011-09-02 | St Microelectronics Tours Sas | Composant de puissance vertical haute tension |
| JP5572531B2 (ja) * | 2010-12-08 | 2014-08-13 | 新電元工業株式会社 | 高信頼性半導体装置の製造方法 |
| JP5820710B2 (ja) * | 2011-12-02 | 2015-11-24 | 新電元工業株式会社 | 半導体装置 |
| US10103540B2 (en) | 2014-04-24 | 2018-10-16 | General Electric Company | Method and system for transient voltage suppression devices with active control |
| US9806157B2 (en) | 2014-10-03 | 2017-10-31 | General Electric Company | Structure and method for transient voltage suppression devices with a two-region base |
| US12527017B2 (en) | 2021-09-29 | 2026-01-13 | Shindengen Electric Manufacturing Co., Ltd. | Bidirectional thyristor |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE639633A (fr) * | 1962-11-07 | |||
| US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
| JPS5621266B2 (fr) * | 1973-10-05 | 1981-05-18 | ||
| US4190853A (en) * | 1974-07-15 | 1980-02-26 | Hutson Jearld L | Multilayer semiconductor switching devices |
| US3996601A (en) * | 1974-07-15 | 1976-12-07 | Hutson Jerald L | Shorting structure for multilayer semiconductor switching devices |
| US3972014A (en) * | 1974-11-11 | 1976-07-27 | Hutson Jearld L | Four quadrant symmetrical semiconductor switch |
| JPS5346285A (en) * | 1976-10-08 | 1978-04-25 | Hitachi Ltd | Mesa type high breakdown voltage semiconductor device |
| JPS5724558A (en) * | 1980-07-22 | 1982-02-09 | Nec Corp | Semicondctor device |
| JPS5745278A (en) * | 1980-08-29 | 1982-03-15 | Mitsubishi Electric Corp | 3-terminal bidirectional thyristor |
| FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
| JPH02114669A (ja) * | 1988-10-25 | 1990-04-26 | Sharp Corp | メサ型トライアック |
| JPH02184026A (ja) * | 1989-01-11 | 1990-07-18 | Sharp Corp | 半導体装置の形成方法 |
-
1993
- 1993-06-01 JP JP5130649A patent/JPH06342902A/ja active Pending
-
1994
- 1994-06-01 WO PCT/JP1994/000884 patent/WO1994028586A1/fr not_active Ceased
- 1994-06-01 US US08/564,333 patent/US5900651A/en not_active Expired - Fee Related
- 1994-06-01 EP EP94917138A patent/EP0702412A4/fr not_active Withdrawn
- 1994-06-01 CA CA002164339A patent/CA2164339A1/fr not_active Abandoned
-
1995
- 1995-11-30 NO NO954863A patent/NO954863L/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO1994028586A1 (fr) | 1994-12-08 |
| EP0702412A4 (fr) | 1999-06-09 |
| NO954863D0 (no) | 1995-11-30 |
| EP0702412A1 (fr) | 1996-03-20 |
| JPH06342902A (ja) | 1994-12-13 |
| CA2164339A1 (fr) | 1994-12-08 |
| US5900651A (en) | 1999-05-04 |
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