PL3331032T3 - Sposób wytwarzania ogniwa słonecznego - Google Patents
Sposób wytwarzania ogniwa słonecznegoInfo
- Publication number
- PL3331032T3 PL3331032T3 PL17205128.6T PL17205128T PL3331032T3 PL 3331032 T3 PL3331032 T3 PL 3331032T3 PL 17205128 T PL17205128 T PL 17205128T PL 3331032 T3 PL3331032 T3 PL 3331032T3
- Authority
- PL
- Poland
- Prior art keywords
- manufacturng
- solar cell
- solar
- cell
- manufacturng solar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/134—Irradiation with electromagnetic or particle radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160164540A KR102257824B1 (ko) | 2016-12-05 | 2016-12-05 | 태양 전지 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3331032T3 true PL3331032T3 (pl) | 2026-03-09 |
Family
ID=60569784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL17205128.6T PL3331032T3 (pl) | 2016-12-05 | 2017-12-04 | Sposób wytwarzania ogniwa słonecznego |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10483427B2 (pl) |
| EP (1) | EP3331032B1 (pl) |
| JP (1) | JP7182052B2 (pl) |
| KR (1) | KR102257824B1 (pl) |
| ES (1) | ES3059299T3 (pl) |
| PL (1) | PL3331032T3 (pl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018124394A1 (de) * | 2018-10-02 | 2020-04-02 | Hanwha Q Cells Gmbh | Solarzellen-Herstellungsverfahren und Solarzelle |
| KR102660300B1 (ko) * | 2019-01-21 | 2024-04-25 | 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 제조 방법 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680128A (en) * | 1979-12-05 | 1981-07-01 | Sumitomo Electric Ind Ltd | Manufacture of thin film |
| JPH05235391A (ja) * | 1991-03-07 | 1993-09-10 | Mitsubishi Electric Corp | 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法 |
| EP0552375B1 (en) * | 1991-07-16 | 2004-06-02 | Seiko Epson Corporation | Method of forming a semiconductor film with a chemical vapor deposition apparatus |
| JP2639616B2 (ja) * | 1993-03-12 | 1997-08-13 | 株式会社半導体エネルギー研究所 | 半導体被膜形成方法 |
| US5786027A (en) | 1996-02-14 | 1998-07-28 | Micron Technology, Inc. | Method for depositing polysilicon with discontinuous grain boundaries |
| DE69738307T2 (de) * | 1996-12-27 | 2008-10-02 | Canon K.K. | Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle |
| US7863157B2 (en) | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
| JP5226255B2 (ja) | 2007-07-13 | 2013-07-03 | シャープ株式会社 | 太陽電池の製造方法 |
| JP2009238824A (ja) | 2008-03-26 | 2009-10-15 | Tokyo Ohka Kogyo Co Ltd | 半導体用電極の製造方法及びこれを用いた太陽電池 |
| EP2283514A1 (en) * | 2008-04-25 | 2011-02-16 | Innovalight, Inc. | Junction formation on wafer substrates using group iv nanoparticles |
| US8242354B2 (en) | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| JP5215330B2 (ja) | 2010-02-01 | 2013-06-19 | シャープ株式会社 | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール |
| JP5408009B2 (ja) | 2010-04-08 | 2014-02-05 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| US20120073650A1 (en) | 2010-09-24 | 2012-03-29 | David Smith | Method of fabricating an emitter region of a solar cell |
| KR20120045424A (ko) | 2010-10-29 | 2012-05-09 | 삼성전자주식회사 | 태양전지 제조방법 |
| US8492253B2 (en) | 2010-12-02 | 2013-07-23 | Sunpower Corporation | Method of forming contacts for a back-contact solar cell |
| US9842949B2 (en) * | 2011-08-09 | 2017-12-12 | Ob Realty, Llc | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers |
| HUP1100437A2 (en) * | 2011-08-15 | 2013-02-28 | Ecosolifer Ag | Reaction chamber for producing semiconducting thin film formation on one |
| KR101948206B1 (ko) | 2012-03-02 | 2019-02-14 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양 전지와, 이의 제조 방법 |
| KR101918737B1 (ko) * | 2012-03-19 | 2019-02-08 | 엘지전자 주식회사 | 태양 전지 |
| US9312420B2 (en) | 2012-04-17 | 2016-04-12 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| JP6114108B2 (ja) | 2013-05-20 | 2017-04-12 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| US9214594B2 (en) * | 2013-08-07 | 2015-12-15 | Solaero Technologies Corp. | Fabrication of solar cells with electrically conductive polyimide adhesive |
| KR102173644B1 (ko) | 2014-01-29 | 2020-11-03 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101661807B1 (ko) | 2014-07-28 | 2016-09-30 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| CN104143589B (zh) | 2014-08-01 | 2020-02-14 | 北京飞行博达电子有限公司 | 一种太阳能电池的双面扩散方法 |
| JP6219913B2 (ja) | 2014-11-28 | 2017-10-25 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
| CN105489671A (zh) | 2015-12-28 | 2016-04-13 | 苏州中来光伏新材股份有限公司 | 一种n型双面太阳能电池及其制备方法 |
-
2016
- 2016-12-05 KR KR1020160164540A patent/KR102257824B1/ko active Active
-
2017
- 2017-12-04 PL PL17205128.6T patent/PL3331032T3/pl unknown
- 2017-12-04 EP EP17205128.6A patent/EP3331032B1/en active Active
- 2017-12-04 ES ES17205128T patent/ES3059299T3/es active Active
- 2017-12-05 JP JP2017233423A patent/JP7182052B2/ja active Active
- 2017-12-05 US US15/831,904 patent/US10483427B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102257824B1 (ko) | 2021-05-28 |
| US10483427B2 (en) | 2019-11-19 |
| EP3331032A1 (en) | 2018-06-06 |
| KR20180064194A (ko) | 2018-06-14 |
| ES3059299T3 (en) | 2026-03-19 |
| EP3331032B1 (en) | 2025-10-22 |
| EP3331032C0 (en) | 2025-10-22 |
| JP7182052B2 (ja) | 2022-12-02 |
| US20180158977A1 (en) | 2018-06-07 |
| JP2018093200A (ja) | 2018-06-14 |
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