PL357695A1 - Method of obtaining voluminal mono-crystalline nitride containing gallium - Google Patents
Method of obtaining voluminal mono-crystalline nitride containing galliumInfo
- Publication number
- PL357695A1 PL357695A1 PL02357695A PL35769502A PL357695A1 PL 357695 A1 PL357695 A1 PL 357695A1 PL 02357695 A PL02357695 A PL 02357695A PL 35769502 A PL35769502 A PL 35769502A PL 357695 A1 PL357695 A1 PL 357695A1
- Authority
- PL
- Poland
- Prior art keywords
- gallium
- sub
- obtaining
- sodium
- voluminal
- Prior art date
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title abstract 5
- 229910052733 gallium Inorganic materials 0.000 title abstract 5
- 150000004767 nitrides Chemical class 0.000 title abstract 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 4
- 239000002904 solvent Substances 0.000 abstract 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract 2
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052708 sodium Inorganic materials 0.000 abstract 2
- 239000011734 sodium Substances 0.000 abstract 2
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910001415 sodium ion Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
W jednym z rozwiązań przedmiotem wynalazku jest sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego z dodatkiem mineralizatora, polegający na tym, że w autoklawie wytwarza się nadkrytyczny rozpuszczalnik amoniakalny, zawierający co najmniej dwa rodzaje jonów metali alkalicznych (I grupa IUPAC 1989), korzystnie jony sodu i innego metalu alkalicznego, rozpuszcza się w tym rozpuszczalniku materiał źródłowy zawierający gal i prowadzi się krystalizację azotku zawierającego gal z nadkrytycznego roztworu na powierzchni zarodka w temperaturze wyższej i/lub ciśnieniu niższym niż dla rozpuszczania materiału źródłowego. Korzystnie jako mineralizator stosuje się sód w połączeniu z innymi metalami alkalicznymi, w stosunku molowym jonów sodu do innego metalu od 1:10 do 10:1. Sposobem według wynalazku otrzymuje się korzystnie azotek zawierający gal o wzorze ogólnym Al<sub>x</sub>Ga<sub>1-x</sub>N, gdzie 0<$E<<=>x<$E<<=>1.In one of the solutions, the subject of the invention is a method for obtaining bulk single-crystalline nitride containing gallium in the environment of a supercritical ammonia solvent with the addition of a mineralizer, consisting in the production of a supercritical ammonia solvent containing at least two types of alkali metal ions in an autoclave (IUPAC group 1989). , preferably sodium and other alkali metal ions, the gallium-containing source material is dissolved in this solvent and the gallium-containing nitride is crystallized from a supercritical solution on the surface of the seed at a temperature higher and/or a pressure lower than that for dissolving the source material. Preferably, sodium is used as a mineralizer in combination with other alkali metals, in a molar ratio of sodium ions to the other metal from 1:10 to 10:1. The method according to the invention preferably obtains a gallium-containing nitride with the general formula Al<sub>x</sub>Ga<sub>1-x</sub>N, where 0<$E<<=>x<$E<<= >1.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL357695A PL232211B1 (en) | 2002-12-11 | 2002-12-11 | Method of obtaining voluminal mono-crystalline nitride containing gallium |
| JP2004558480A JP2006509707A (en) | 2002-12-11 | 2003-12-11 | An improved process for obtaining bulk single crystals of gallium-containing nitrides |
| US10/538,349 US7314517B2 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk mono-crystalline gallium-containing nitride |
| PCT/JP2003/015903 WO2004053208A1 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk-crystalline gallium-containing nitride |
| AU2003285766A AU2003285766A1 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk-crystalline gallium-containing nitride |
| PL379548A PL225430B1 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk-crystalline gallium-containing nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL357695A PL232211B1 (en) | 2002-12-11 | 2002-12-11 | Method of obtaining voluminal mono-crystalline nitride containing gallium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL357695A1 true PL357695A1 (en) | 2004-06-14 |
| PL232211B1 PL232211B1 (en) | 2019-05-31 |
Family
ID=32733395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL357695A PL232211B1 (en) | 2002-12-11 | 2002-12-11 | Method of obtaining voluminal mono-crystalline nitride containing gallium |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL232211B1 (en) |
-
2002
- 2002-12-11 PL PL357695A patent/PL232211B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL232211B1 (en) | 2019-05-31 |
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