PL357706A1 - Method of production of voluminal mono-crystalline nitride containing gallium - Google Patents

Method of production of voluminal mono-crystalline nitride containing gallium

Info

Publication number
PL357706A1
PL357706A1 PL02357706A PL35770602A PL357706A1 PL 357706 A1 PL357706 A1 PL 357706A1 PL 02357706 A PL02357706 A PL 02357706A PL 35770602 A PL35770602 A PL 35770602A PL 357706 A1 PL357706 A1 PL 357706A1
Authority
PL
Poland
Prior art keywords
sub
gallium
voluminal
mono
production
Prior art date
Application number
PL02357706A
Other languages
Polish (pl)
Other versions
PL221055B1 (en
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek P. Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL357706A priority Critical patent/PL221055B1/en
Priority to JP2004558480A priority patent/JP2006509707A/en
Priority to US10/538,349 priority patent/US7314517B2/en
Priority to PCT/JP2003/015903 priority patent/WO2004053208A1/en
Priority to AU2003285766A priority patent/AU2003285766A1/en
Priority to PL379548A priority patent/PL225430B1/en
Publication of PL357706A1 publication Critical patent/PL357706A1/en
Publication of PL221055B1 publication Critical patent/PL221055B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Przedmiotem wynalazku jest sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego z dodatkiem mineralizatora, polegający na tym, że w autoklawie w środowisku nadkrytycznego rozpuszczalnika amoniakalnego, zawierającego co najmniej jony metalu alkalicznego (I grupa IUPAC 1989) i jony metalu ziem alkalicznych (II grupa IUPAC 1989), rozpuszcza się materiał źródłowy zwierający gal i prowadzi się krystalizację azotku zawierającego gal , mającego korzystnie wzór ogólny Al<sub>x</sub>Ga<sub>1-x</sub>N, gdzie 0<$E<<=>x<$E<<>1, z nadkrytycznego roztworu na powierzchni zarodka w temperaturze wyższej i/lub ciśnieniu niższym niż dla rozpuszczania materiału źródłowego . Stosunek molowy metalu ziem alkalicznych do wprowadzanego wraz z nim metalu alkalicznego wynosi od 1:500 do 1:5, korzystniej od 1:100 do 1:20.The subject of the invention is a method for obtaining a volumetric monocrystalline nitride containing gallium in the environment of a supercritical ammonia solvent with the addition of a mineralizer, consisting in the fact that in an autoclave in the environment of a supercritical ammonia solvent containing at least alkali metal ions (IUPAC 1989 group) and alkaline earth metal ions ( II group IUPAC 1989), the gallium-containing source material is dissolved and the gallium-containing nitride is crystallized, preferably having the general formula Al<sub>x</sub>Ga<sub>1-x</sub>N where 0<$ E<<=>x<$E<<>1, from a supercritical solution on the surface of the nucleus at a higher temperature and/or lower pressure than for the dissolution of the source material. The molar ratio of the alkaline earth metal to the alkali metal introduced therewith is from 1:500 to 1:5, more preferably from 1:100 to 1:20.

PL357706A 2002-12-11 2002-12-11 Method of production of voluminal mono-crystalline nitride containing gallium PL221055B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PL357706A PL221055B1 (en) 2002-12-11 2002-12-11 Method of production of voluminal mono-crystalline nitride containing gallium
JP2004558480A JP2006509707A (en) 2002-12-11 2003-12-11 An improved process for obtaining bulk single crystals of gallium-containing nitrides
US10/538,349 US7314517B2 (en) 2002-12-11 2003-12-11 Process for obtaining bulk mono-crystalline gallium-containing nitride
PCT/JP2003/015903 WO2004053208A1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride
AU2003285766A AU2003285766A1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride
PL379548A PL225430B1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL357706A PL221055B1 (en) 2002-12-11 2002-12-11 Method of production of voluminal mono-crystalline nitride containing gallium

Publications (2)

Publication Number Publication Date
PL357706A1 true PL357706A1 (en) 2004-06-14
PL221055B1 PL221055B1 (en) 2016-02-29

Family

ID=32733406

Family Applications (1)

Application Number Title Priority Date Filing Date
PL357706A PL221055B1 (en) 2002-12-11 2002-12-11 Method of production of voluminal mono-crystalline nitride containing gallium

Country Status (1)

Country Link
PL (1) PL221055B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014191126A1 (en) 2013-05-30 2014-12-04 Ammono S.A. Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method
WO2016038099A1 (en) 2014-09-11 2016-03-17 Ammono S.A. W Upadlosci Likwidacyjnej A method for producing monocrystalline gallium containing nitride and monocrystalline gallium containing nitride, prepared with this method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014191126A1 (en) 2013-05-30 2014-12-04 Ammono S.A. Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method
WO2016038099A1 (en) 2014-09-11 2016-03-17 Ammono S.A. W Upadlosci Likwidacyjnej A method for producing monocrystalline gallium containing nitride and monocrystalline gallium containing nitride, prepared with this method

Also Published As

Publication number Publication date
PL221055B1 (en) 2016-02-29

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