PL374502A1 - Sposób i urządzenie do suszenia powierzchni płytek półprzewodnikowych z zastosowaniem wielu wlotów i wylotów utrzymywanych w bezpośrednim pobliżu powierzchni płytek - Google Patents

Sposób i urządzenie do suszenia powierzchni płytek półprzewodnikowych z zastosowaniem wielu wlotów i wylotów utrzymywanych w bezpośrednim pobliżu powierzchni płytek

Info

Publication number
PL374502A1
PL374502A1 PL03374502A PL37450203A PL374502A1 PL 374502 A1 PL374502 A1 PL 374502A1 PL 03374502 A PL03374502 A PL 03374502A PL 37450203 A PL37450203 A PL 37450203A PL 374502 A1 PL374502 A1 PL 374502A1
Authority
PL
Poland
Prior art keywords
substrate
fluid
conduit
head
immediate vicinity
Prior art date
Application number
PL03374502A
Other languages
English (en)
Other versions
PL208012B1 (pl
Inventor
Larios John M. De
James P. Garcia
Carl Woods
Mike Ravkin
Fritz Redeker
John Boyd
Afshin Nickhou
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/261,839 external-priority patent/US7234477B2/en
Priority claimed from US10/611,140 external-priority patent/US7264007B2/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Publication of PL374502A1 publication Critical patent/PL374502A1/pl
Publication of PL208012B1 publication Critical patent/PL208012B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
PL374502A 2002-09-30 2003-09-30 Sposób i system do obróbki płytek półprzewodnikowych oraz przyrząd i głowica do stosowania tego sposobu PL208012B1 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/261,839 US7234477B2 (en) 2000-06-30 2002-09-30 Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US10/611,140 US7264007B2 (en) 2002-09-30 2003-06-30 Method and apparatus for cleaning a substrate using megasonic power

Publications (2)

Publication Number Publication Date
PL374502A1 true PL374502A1 (pl) 2005-10-31
PL208012B1 PL208012B1 (pl) 2011-03-31

Family

ID=32044980

Family Applications (1)

Application Number Title Priority Date Filing Date
PL374502A PL208012B1 (pl) 2002-09-30 2003-09-30 Sposób i system do obróbki płytek półprzewodnikowych oraz przyrząd i głowica do stosowania tego sposobu

Country Status (12)

Country Link
EP (1) EP1500128B1 (pl)
JP (1) JP4559226B2 (pl)
KR (1) KR101055997B1 (pl)
CN (1) CN100431092C (pl)
AT (1) ATE365375T1 (pl)
AU (1) AU2003277212A1 (pl)
DE (1) DE60314508T2 (pl)
IL (1) IL161550A0 (pl)
PL (1) PL208012B1 (pl)
RU (1) RU2338296C2 (pl)
TW (1) TWI230397B (pl)
WO (1) WO2004030052A2 (pl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7520285B2 (en) * 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
WO2007047163A2 (en) 2005-10-04 2007-04-26 Applied Materials, Inc. Methods and apparatus for drying a substrate
KR100687504B1 (ko) * 2005-10-27 2007-02-27 세메스 주식회사 매엽식 기판 세정 방법
DE102013220252A1 (de) * 2013-10-08 2015-04-09 Rudolph Technologies Germany Gmbh Halte- und Drehvorrichtung für flache Objekte
DE102017111618B4 (de) * 2017-05-29 2021-03-11 CURO GmbH Vorrichtung, System und Verfahren zur Trocknung einer Halbleiterscheibe
US11352711B2 (en) * 2019-07-16 2022-06-07 Applied Materials, Inc. Fluid recovery in semiconductor processing
CN111312580B (zh) * 2020-02-27 2022-07-15 至微半导体(上海)有限公司 一种用于高深宽比图形晶圆的微幅震动方法
CN111211043B (zh) * 2020-02-27 2022-10-18 至微半导体(上海)有限公司 一种用于提升晶圆干燥效率的干燥方法
CN111312581B (zh) * 2020-02-27 2022-07-15 至微半导体(上海)有限公司 一种可提升晶圆干燥效率的排气方法
US12293917B2 (en) 2021-06-23 2025-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for removing impurities during chemical mechanical planarization

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264626A (ja) * 1994-04-28 1996-10-11 Hitachi Ltd 試料保持方法及び試料表面の流体処理方法並びにそれらの装置
US5975098A (en) * 1995-12-21 1999-11-02 Dainippon Screen Mfg. Co., Ltd. Apparatus for and method of cleaning substrate
JPH1092784A (ja) * 1996-09-10 1998-04-10 Toshiba Microelectron Corp ウェーハ処理装置およびウェーハ処理方法
US6039059A (en) 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
US6398975B1 (en) * 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
EP0905748B1 (en) * 1997-09-24 2006-03-15 Interuniversitair Micro-Elektronica Centrum Vzw Method of removing particles and a liquid from a surface of substrate
EP0905746A1 (en) * 1997-09-24 1999-03-31 Interuniversitair Micro-Elektronica Centrum Vzw Method of removing a liquid from a surface of a rotating substrate
JP4017680B2 (ja) * 1997-09-24 2007-12-05 アンテルユニヴェルシテール・ミクロ―エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 表面から液体を除去する方法及び装置
JP4616948B2 (ja) * 1997-09-24 2011-01-19 アイメック 回転基材の表面から液体を除去する方法および装置
JP2000015159A (ja) * 1998-07-02 2000-01-18 Dainippon Screen Mfg Co Ltd 処理液供給装置
JP3873099B2 (ja) * 2000-01-13 2007-01-24 アルプス電気株式会社 基板ガイド装置ならびにこれを用いた洗浄装置
RU2163408C1 (ru) * 2000-02-08 2001-02-20 Воронежская государственная технологическая академия Устройство для снятия фаски при финишной обработке полупроводниковых пластин
AU2001270205A1 (en) * 2000-06-26 2002-01-08 Applied Materials, Inc. Method and apparatus for wafer cleaning
US6555017B1 (en) * 2000-10-13 2003-04-29 The Regents Of The University Of Caliofornia Surface contouring by controlled application of processing fluid using Marangoni effect

Also Published As

Publication number Publication date
PL208012B1 (pl) 2011-03-31
JP2006501655A (ja) 2006-01-12
KR20050063748A (ko) 2005-06-28
KR101055997B1 (ko) 2011-08-11
AU2003277212A1 (en) 2004-04-19
EP1500128B1 (en) 2007-06-20
DE60314508T2 (de) 2008-02-21
CN1579005A (zh) 2005-02-09
TWI230397B (en) 2005-04-01
IL161550A0 (en) 2004-09-27
ATE365375T1 (de) 2007-07-15
WO2004030052A2 (en) 2004-04-08
RU2338296C2 (ru) 2008-11-10
TW200411722A (en) 2004-07-01
CN100431092C (zh) 2008-11-05
RU2004113416A (ru) 2006-07-20
DE60314508D1 (de) 2007-08-02
WO2004030052A3 (en) 2004-07-29
EP1500128A2 (en) 2005-01-26
JP4559226B2 (ja) 2010-10-06

Similar Documents

Publication Publication Date Title
EP1801851A3 (en) Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
PL374502A1 (pl) Sposób i urządzenie do suszenia powierzchni płytek półprzewodnikowych z zastosowaniem wielu wlotów i wylotów utrzymywanych w bezpośrednim pobliżu powierzchni płytek
MY139627A (en) Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
WO2002001613A8 (en) Method and apparatus for wafer cleaning
MY163666A (en) Apparatus and method for processing a substrate
DE602004018643D1 (de) Einrichtung und verfahren zur nassbehandlung von scheibenartigen substraten
MY140300A (en) Enhanced wafer cleaning method
DE59900269D1 (de) Vorrichtung zum Nassätzen einer Kante einer Halbleiterscheibe
WO2002006902A3 (en) Method and system of automatic fluid dispensing for imprint lithography processes
WO2004008493A3 (en) Method and apparatus for supporting semiconductor wafers
SG115836A1 (en) Controls of ambient environment during wafer drying using proximity head
TW200610006A (en) Apparatus and method for utilizing a meniscus in substrate processing
WO2007085015A3 (en) Acoustic energy system, method and apparatus for processing flat articles
DE60216427D1 (de) Vorrichtung und Verfahren zur Ausrichtung der Fläche eines aktiven Halterrings mit der Fläche einer Halbleiterscheibe während dem chemisch-mechanischen Polieren
ATE233131T1 (de) System zum reinigen von halbleiterscheiben mit megasonischer wanderwelle
ATE325427T1 (de) Verfahren und vorrichtung zum reinigen und anschliessendem bonden von substraten
MY142184A (en) Method and apparatus for transporting a substrate using non-newtonian fluid
WO2005050705A3 (en) Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon
TW200520139A (en) Method and apparatus for joining adhesive tape to back face of semiconductor wafer
AT500075A3 (de) Vorrichtung und verfahren zum verbinden von wafern
TW200743145A (en) Semiconductor apparatus and clean unit thereof
TW200703482A (en) Method and apparatus for cleaning electronic device
JP1737180S (ja) 半導体処理装置用シャワーヘッド
DE602004023878D1 (de) Randrad-trockenverteiler
SE0201111D0 (sv) Sprutanordning

Legal Events

Date Code Title Description
LAPS Decisions on the lapse of the protection rights

Effective date: 20130930