PL409775A1 - Chemical extraction method of semiconductor structure and insulation layer from electronic components - Google Patents
Chemical extraction method of semiconductor structure and insulation layer from electronic componentsInfo
- Publication number
- PL409775A1 PL409775A1 PL409775A PL40977514A PL409775A1 PL 409775 A1 PL409775 A1 PL 409775A1 PL 409775 A PL409775 A PL 409775A PL 40977514 A PL40977514 A PL 40977514A PL 409775 A1 PL409775 A1 PL 409775A1
- Authority
- PL
- Poland
- Prior art keywords
- insulation layer
- electronic components
- semiconductor structure
- mixture
- chemical extraction
- Prior art date
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Sposób chemicznej ekstrakcji struktury półprzewodnikowej i warstwy izolacyjnej z podzespołów elektronicznych polega na tym, że badany podzespół umieszcza się w zlewce na płycie grzejnej, nagrzanej do temperatury 90°C, po czym zalewa się go roztworem trawiącym z mieszaniny stężonego kwasu azotowego i kwasu siarkowego w proporcji 1 :1 z dodatkiem kwasu solnego w ilości od 10 do 20 ml na 1 dcm3 mieszaniny lub z mieszaniny stężonego kwasu azotowego i stężonego kwasu solnego w proporcji HCl:HNO3:H2O 1:1:1, a proces wydzielenia struktury wykonuje się manualnie od spodniej części podzespołu elektronicznego poprzez selektywne trawienie najpierw metalowego podłoża a następnie kolejnych warstw podzespołu wraz z obudową.The method of chemical extraction of the semiconductor structure and the insulation layer from electronic components consists in the fact that the tested component is placed in a beaker on a hot plate, heated to 90 ° C, after which it is flooded with an etching solution from a mixture of concentrated nitric acid and sulfuric acid in proportion 1: 1 with the addition of hydrochloric acid in an amount of 10 to 20 ml per 1 dcm3 of the mixture or from a mixture of concentrated nitric acid and concentrated hydrochloric acid in the proportion of HCl: HNO3: H2O 1: 1: 1, and the process of separating the structure is performed manually from the bottom electronic component parts by selective etching first of the metal substrate and then subsequent layers of the component together with the casing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL409775A PL227418B1 (en) | 2014-10-13 | 2014-10-13 | Chemical extraction method of semiconductor structure and insulation layer from electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL409775A PL227418B1 (en) | 2014-10-13 | 2014-10-13 | Chemical extraction method of semiconductor structure and insulation layer from electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL409775A1 true PL409775A1 (en) | 2016-04-25 |
| PL227418B1 PL227418B1 (en) | 2017-11-30 |
Family
ID=55762066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL409775A PL227418B1 (en) | 2014-10-13 | 2014-10-13 | Chemical extraction method of semiconductor structure and insulation layer from electronic components |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL227418B1 (en) |
-
2014
- 2014-10-13 PL PL409775A patent/PL227418B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL227418B1 (en) | 2017-11-30 |
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