PL414209A1 - Method for chemical extraction of a semiconductor structure and insulation layer from the PLCC, SO, QFP and QFN type electronic components - Google Patents
Method for chemical extraction of a semiconductor structure and insulation layer from the PLCC, SO, QFP and QFN type electronic componentsInfo
- Publication number
- PL414209A1 PL414209A1 PL414209A PL41420915A PL414209A1 PL 414209 A1 PL414209 A1 PL 414209A1 PL 414209 A PL414209 A PL 414209A PL 41420915 A PL41420915 A PL 41420915A PL 414209 A1 PL414209 A1 PL 414209A1
- Authority
- PL
- Poland
- Prior art keywords
- mixture
- semiconductor structure
- plcc
- qfp
- subassembly
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000605 extraction Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 238000009413 insulation Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 5
- 239000000203 mixture Substances 0.000 abstract 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 3
- 229910017604 nitric acid Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract 2
- 229910001369 Brass Inorganic materials 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000010951 brass Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000018553 tannin Nutrition 0.000 abstract 1
- 229920001864 tannin Polymers 0.000 abstract 1
- 239000001648 tannin Substances 0.000 abstract 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
Sposób chemicznej ekstrakcji struktury półprzewodnikowej i warstwy izolacyjnej z podzespołów elektronicznych typu PLCC, SO, QFP i QFN polega na tym, że proces wydzielenia struktury półprzewodnikowej wykonuje się w dwóch etapach. W pierwszym etapie chemicznie usuwa się podłoże metaliczne podzespołu z zastosowaniem mieszaniny stężonego kwasu azotowego i kwasu siarkowego w proporcji 1 : 2 z dodatkiem kwasu solnego w ilości od 1 do 20 ml na 1 dm3 mieszaniny dla podłoży miedzianych i mosiężnych lub mieszaniny stężonego kwasu azotowego i stężonego kwasu solnego w proporcji HCl : HNO3 : H2O 1 : 1 : 1 dla podłoży aluminiowych w czasie od 15 do 60 sekund, w temperaturze od 90°C do 100°C. W drugim etapie usuwa się kolejne warstwy podzespołu wraz z jego obudową z zastosowaniem mieszaniny kwasu siarkowego i wody utlenionej (30%) w proporcji od 15 : 1 do 10 : 1 z dodatkiem taniny w ilości 5 mg na 1 dm3 mieszaniny, w czasie od 30 sekund do 1 minuty w temperaturze od 90 do 120°C. Następnie podzespół płucze się w acetonie w płuczce ultradźwiękowej przez 15 sekund, przy czym operacje trawienia i płukania w drugim etapie ekstrakcji prowadzi się naprzemiennie, aż do wyekstrahowania krzemowej struktury półprzewodnikowej.The method of chemical extraction of the semiconductor structure and the insulation layer from PLCC, SO, QFP and QFN electronic components consists in the process of separating the semiconductor structure in two stages. In the first stage, the metal substrate of the subassembly is chemically removed using a 1: 2 mixture of concentrated nitric acid and sulfuric acid with 1 to 20 ml of hydrochloric acid per 1 liter of mixture for copper and brass substrates or a mixture of concentrated nitric acid and concentrated hydrochloric acid in the proportion of HCl: HNO3: H2O 1: 1: 1 for aluminum substrates for 15 to 60 seconds at a temperature of 90 ° C to 100 ° C. In the second stage, subsequent layers of the subassembly are removed together with its housing using a mixture of sulfuric acid and hydrogen peroxide (30%) in a ratio of 15: 1 to 10: 1 with the addition of tannin in the amount of 5 mg per 1 dm3 of the mixture, in time from 30 seconds to 1 minute at 90 to 120 ° C. The subassembly is then rinsed in acetone in an ultrasonic scrubber for 15 seconds, with the etching and rinsing operations in the second extraction step being carried out alternately until the silicon semiconductor structure is extracted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL414209A PL229726B1 (en) | 2015-09-29 | 2015-09-29 | Method for chemical extraction of a semiconductor structure and insulation layer from the PLCC, SO, QFP and QFN type electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL414209A PL229726B1 (en) | 2015-09-29 | 2015-09-29 | Method for chemical extraction of a semiconductor structure and insulation layer from the PLCC, SO, QFP and QFN type electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL414209A1 true PL414209A1 (en) | 2017-04-10 |
| PL229726B1 PL229726B1 (en) | 2018-08-31 |
Family
ID=58463561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL414209A PL229726B1 (en) | 2015-09-29 | 2015-09-29 | Method for chemical extraction of a semiconductor structure and insulation layer from the PLCC, SO, QFP and QFN type electronic components |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL229726B1 (en) |
-
2015
- 2015-09-29 PL PL414209A patent/PL229726B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL229726B1 (en) | 2018-08-31 |
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