PL414077A1 - Dioda superluminescencyjna na bazie stopu AllnGaN - Google Patents

Dioda superluminescencyjna na bazie stopu AllnGaN

Info

Publication number
PL414077A1
PL414077A1 PL414077A PL41407715A PL414077A1 PL 414077 A1 PL414077 A1 PL 414077A1 PL 414077 A PL414077 A PL 414077A PL 41407715 A PL41407715 A PL 41407715A PL 414077 A1 PL414077 A1 PL 414077A1
Authority
PL
Poland
Prior art keywords
electrical conductivity
layer
superluminescent diode
type electrical
alingan
Prior art date
Application number
PL414077A
Other languages
English (en)
Other versions
PL228006B1 (pl
Inventor
Anna Kafar
Szymon Stańczyk
Anna Nowakowska-Siwińska
Marcin Sarzyński
Tadeusz Suski
Piotr Perlin
Original Assignee
Topgan Spółka Z Ograniczoną Odpowiedzialnością
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topgan Spółka Z Ograniczoną Odpowiedzialnością, Instytut Wysokich Ciśnień Polskiej Akademii Nauk filed Critical Topgan Spółka Z Ograniczoną Odpowiedzialnością
Priority to PL414077A priority Critical patent/PL228006B1/pl
Priority to US15/762,966 priority patent/US11139414B2/en
Priority to PCT/PL2016/050044 priority patent/WO2017052397A1/en
Priority to EP16788577.1A priority patent/EP3353820B1/en
Publication of PL414077A1 publication Critical patent/PL414077A1/pl
Publication of PL228006B1 publication Critical patent/PL228006B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34373—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)

Abstract

Przedmiotem wynalazku jest dioda superluminescencyjna na bazie stopu AllnGaN, zawierająca objętościowe podłoże (4) z azotku galu, dolną warstwę okładkową (5) o przewodnictwie elektrycznym typu n, dolną warstwę światłowodową (6) o przewodnictwie elektrycznym typu n, warstwę emitującą światło (7), warstwę blokującą elektrony (8) o przewodnictwie elektrycznym typu p, górną warstwę światłowodu (9), górną warstwę okładkową o przewodnictwie elektrycznym typu p (10) i warstwę podkontaktową (11) o przewodnictwie elektrycznym typu p, przy czym objętościowe podłoże (4) z azotku galu posiada przestrzennie zmienną dezorientację powierzchni w stosunku do płaszczyzny krystalograficznej M z zakresu od 0° do 10°.
PL414077A 2015-09-23 2015-09-23 Dioda superluminescencyjna na bazie stopu AlInGaN PL228006B1 (pl)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PL414077A PL228006B1 (pl) 2015-09-23 2015-09-23 Dioda superluminescencyjna na bazie stopu AlInGaN
US15/762,966 US11139414B2 (en) 2015-09-23 2016-09-23 AlInGaN-based superluminescent diode
PCT/PL2016/050044 WO2017052397A1 (en) 2015-09-23 2016-09-23 Alingan-based superluminescent diode
EP16788577.1A EP3353820B1 (en) 2015-09-23 2016-09-23 Alingan-based superluminescent diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL414077A PL228006B1 (pl) 2015-09-23 2015-09-23 Dioda superluminescencyjna na bazie stopu AlInGaN

Publications (2)

Publication Number Publication Date
PL414077A1 true PL414077A1 (pl) 2017-03-27
PL228006B1 PL228006B1 (pl) 2018-02-28

Family

ID=58360322

Family Applications (1)

Application Number Title Priority Date Filing Date
PL414077A PL228006B1 (pl) 2015-09-23 2015-09-23 Dioda superluminescencyjna na bazie stopu AlInGaN

Country Status (4)

Country Link
US (1) US11139414B2 (pl)
EP (1) EP3353820B1 (pl)
PL (1) PL228006B1 (pl)
WO (1) WO2017052397A1 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL246920B1 (pl) * 2021-11-26 2025-03-31 Inst Wysokich Cisnien Polskiej Akademii Nauk Układ lasera i światłowodu oraz sposób jego wytwarzania

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682863B2 (ja) * 1987-12-02 1994-10-19 日本電信電話株式会社 発光ダイオード
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP2002076432A (ja) * 2000-08-30 2002-03-15 Stanley Electric Co Ltd 端面発光型半導体装置、その製造方法及び光空間伝送装置
TW525306B (en) 2001-04-19 2003-03-21 Univ Nat Taiwan Technique using multi-layer quantum well of different widths for increasing the light emitting bandwidth of semiconductor photoelectric device
EP1583190B1 (en) 2004-04-02 2008-12-24 Nichia Corporation Nitride semiconductor laser device
CN102449737A (zh) * 2009-03-02 2012-05-09 加利福尼亚大学董事会 生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置
JP2011003661A (ja) 2009-06-17 2011-01-06 Rohm Co Ltd 半導体レーザ素子
KR20130056206A (ko) 2010-04-05 2013-05-29 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반극성 면 ⅲ-족 질화물 반도체-계 발광 다이오드들 및 레이저 다이오드들을 위한 알루미늄 갈륨 질화물 배리어들 및 분리 구속 헤테로구조 층들
PL224995B1 (pl) 2010-04-06 2017-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Podłoże do wzrostu epitaksjalnego
JP5568406B2 (ja) * 2010-08-18 2014-08-06 パナソニック株式会社 スーパールミネッセントダイオード
US9020003B1 (en) * 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
PL221156B1 (pl) 2012-06-06 2016-02-29 Inst Fizyki Polskiej Akademii Nauk Struktura lasera półprzewodnikowego
US9368582B2 (en) * 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
PL224641B1 (pl) 2014-06-03 2017-01-31 Wrocławskie Centrum Badań Eit + Spółka Z Ograniczoną Dioda superluminescencyjna na bazie AlInGaN

Also Published As

Publication number Publication date
EP3353820A1 (en) 2018-08-01
US11139414B2 (en) 2021-10-05
US20200259043A1 (en) 2020-08-13
EP3353820C0 (en) 2024-06-05
PL228006B1 (pl) 2018-02-28
EP3353820B1 (en) 2024-06-05
WO2017052397A1 (en) 2017-03-30

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