SE463461B - Foerfarande foer belaeggning av substrat genom kemisk foeraangning i en vakuumkammmare - Google Patents
Foerfarande foer belaeggning av substrat genom kemisk foeraangning i en vakuumkammmareInfo
- Publication number
- SE463461B SE463461B SE8602715A SE8602715A SE463461B SE 463461 B SE463461 B SE 463461B SE 8602715 A SE8602715 A SE 8602715A SE 8602715 A SE8602715 A SE 8602715A SE 463461 B SE463461 B SE 463461B
- Authority
- SE
- Sweden
- Prior art keywords
- gas
- glow cathode
- reaction gas
- chamber
- vacuum chamber
- Prior art date
Links
- 239000007789 gas Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 238000010891 electric arc Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000566113 Branta sandvicensis Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000037072 sun protection Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH2610/85A CH664768A5 (de) | 1985-06-20 | 1985-06-20 | Verfahren zur beschichtung von substraten in einer vakuumkammer. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE8602715D0 SE8602715D0 (sv) | 1986-06-18 |
| SE8602715L SE8602715L (ja) | 1986-12-21 |
| SE463461B true SE463461B (sv) | 1990-11-26 |
Family
ID=4237637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8602715A SE463461B (sv) | 1985-06-20 | 1986-06-18 | Foerfarande foer belaeggning av substrat genom kemisk foeraangning i en vakuumkammmare |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4749587A (ja) |
| JP (1) | JPH0791654B2 (ja) |
| CH (1) | CH664768A5 (ja) |
| DE (1) | DE3614384A1 (ja) |
| ES (1) | ES8707311A1 (ja) |
| FR (1) | FR2583780B1 (ja) |
| GB (1) | GB2176808B (ja) |
| IT (1) | IT1189560B (ja) |
| SE (1) | SE463461B (ja) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
| FR2604188B1 (fr) * | 1986-09-18 | 1992-11-27 | Framatome Sa | Element tubulaire en acier inoxydable presentant une resistance a l'usure amelioree |
| JPS6395200A (ja) * | 1986-10-09 | 1988-04-26 | Sumitomo Electric Ind Ltd | 硬質窒化ホウ素膜の製造方法 |
| EP0286306B1 (en) * | 1987-04-03 | 1993-10-06 | Fujitsu Limited | Method and apparatus for vapor deposition of diamond |
| JPH089519B2 (ja) * | 1987-05-11 | 1996-01-31 | 富士通株式会社 | 高圧相窒化ホウ素の気相合成法 |
| US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
| JP2657810B2 (ja) * | 1988-01-11 | 1997-09-30 | フラマトメ | 改良された耐摩耗性を有するステンレス鋼製管状要素 |
| GB2215739A (en) * | 1988-03-26 | 1989-09-27 | Univ Hull | Ionisation assisted chemical vapour deposition |
| JPH0244738A (ja) * | 1988-08-05 | 1990-02-14 | Semiconductor Energy Lab Co Ltd | 電子装置作製方法 |
| US4992153A (en) * | 1989-04-26 | 1991-02-12 | Balzers Aktiengesellschaft | Sputter-CVD process for at least partially coating a workpiece |
| US5061513A (en) * | 1990-03-30 | 1991-10-29 | Flynn Paul L | Process for depositing hard coating in a nozzle orifice |
| US5360479A (en) * | 1990-07-02 | 1994-11-01 | General Electric Company | Isotopically pure single crystal epitaxial diamond films and their preparation |
| DE4029270C1 (ja) * | 1990-09-14 | 1992-04-09 | Balzers Ag, Balzers, Li | |
| DE4029268C2 (de) * | 1990-09-14 | 1995-07-06 | Balzers Hochvakuum | Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung |
| CA2065581C (en) | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
| JPH04326725A (ja) * | 1991-04-26 | 1992-11-16 | Tokyo Electron Ltd | プラズマ装置 |
| CA2077773A1 (en) * | 1991-10-25 | 1993-04-26 | Thomas R. Anthony | Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond |
| US5175929A (en) * | 1992-03-04 | 1993-01-05 | General Electric Company | Method for producing articles by chemical vapor deposition |
| GB2267733A (en) * | 1992-05-13 | 1993-12-15 | Gen Electric | Abrasion protective and thermal dissipative coating for jet engine component leading edges. |
| CH687111A5 (de) * | 1992-05-26 | 1996-09-13 | Balzers Hochvakuum | Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens. |
| ES2060539B1 (es) * | 1993-01-22 | 1995-06-16 | Tekniker | Proceso para la obtencion de recubrimientos de carbono y carbono-metal mediante deposicion fisica en fase vapor por arco metalico con catodo de grafito. |
| DE19526387C2 (de) * | 1994-07-19 | 1998-12-10 | Sumitomo Metal Mining Co | Doppelt beschichteter Stahlverbundgegenstand und Verfahren zu dessen Herstellung |
| EP0724026B1 (de) * | 1995-01-25 | 1999-10-13 | Balzers Aktiengesellschaft | Verfahren zur reaktiven Schichtabscheidung |
| US5753045A (en) * | 1995-01-25 | 1998-05-19 | Balzers Aktiengesellschaft | Vacuum treatment system for homogeneous workpiece processing |
| CH690857A5 (de) * | 1995-07-04 | 2001-02-15 | Erich Bergmann | Anlage zur plasmaunterstützten physikalischen Hochvakuumbedampfung von Werkstücken mit verschleissfesten Schichten und Verfahren zur Durchführung in dieser Anlage |
| DE19621855C2 (de) * | 1996-05-31 | 2003-03-27 | Univ Dresden Tech | Verfahren zur Herstellung von Metallisierungen auf Halbleiterkörpern unter Verwendung eines gepulsten Vakuumbogenverdampfers |
| CH691717A5 (de) * | 1997-03-08 | 2001-09-14 | Comet Technik Ag | Kondensator mit kaltfliessgepressten Elektroden. |
| EP0988407B9 (de) * | 1997-06-13 | 2004-12-15 | Unaxis Trading AG | Verfahren zur herstellung von werkstücken, die mit einer epitaktischen schicht beschichtet sind |
| US6110544A (en) * | 1997-06-26 | 2000-08-29 | General Electric Company | Protective coating by high rate arc plasma deposition |
| AU9410498A (en) | 1997-11-26 | 1999-06-17 | Vapor Technologies, Inc. | Apparatus for sputtering or arc evaporation |
| US5997705A (en) * | 1999-04-14 | 1999-12-07 | Vapor Technologies, Inc. | Rectangular filtered arc plasma source |
| CH694699A5 (de) * | 1999-04-29 | 2005-06-15 | Balzers Hochvakuum | Verfahren zur Herstellung von Silizium. |
| JP4806146B2 (ja) * | 1999-07-13 | 2011-11-02 | エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ | 真空処理ないしは粉末製造のための装置および方法 |
| DE10018143C5 (de) * | 2000-04-12 | 2012-09-06 | Oerlikon Trading Ag, Trübbach | DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems |
| US20020160620A1 (en) * | 2001-02-26 | 2002-10-31 | Rudolf Wagner | Method for producing coated workpieces, uses and installation for the method |
| US7465210B2 (en) * | 2004-02-25 | 2008-12-16 | The Regents Of The University Of California | Method of fabricating carbide and nitride nano electron emitters |
| US7498587B2 (en) * | 2006-05-01 | 2009-03-03 | Vapor Technologies, Inc. | Bi-directional filtered arc plasma source |
| BRPI0811241B1 (pt) * | 2007-05-25 | 2019-06-25 | Oerlikon Trading Ag, Trübbach | Instalação e método de tratamento a vácuo |
| CN111647879A (zh) * | 2020-04-20 | 2020-09-11 | 中国科学技术大学 | 一种化学气相沉积装置与方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US679926A (en) * | 1900-07-30 | 1901-08-06 | Theron Clark Crawford | Manufacture of filaments for incandescing electric lamps. |
| US3573098A (en) * | 1968-05-09 | 1971-03-30 | Boeing Co | Ion beam deposition unit |
| US3625848A (en) * | 1968-12-26 | 1971-12-07 | Alvin A Snaper | Arc deposition process and apparatus |
| CH624817B (de) * | 1979-09-04 | Balzers Hochvakuum | Verfahren zur herstellung goldfarbener ueberzuege. | |
| SU1040631A1 (ru) * | 1980-06-25 | 1983-09-07 | Предприятие П/Я В-8851 | Вакуумно-дуговое устройство |
| JPS57188670A (en) * | 1981-05-13 | 1982-11-19 | Hitachi Ltd | Treatment of electrically conductive member |
| JPS57201527A (en) * | 1981-06-01 | 1982-12-10 | Toshiba Corp | Ion implantation method |
| US4443488A (en) * | 1981-10-19 | 1984-04-17 | Spire Corporation | Plasma ion deposition process |
| US4512867A (en) * | 1981-11-24 | 1985-04-23 | Andreev Anatoly A | Method and apparatus for controlling plasma generation in vapor deposition |
| IN160089B (ja) * | 1982-07-14 | 1987-06-27 | Standard Oil Co Ohio | |
| US4540596A (en) * | 1983-05-06 | 1985-09-10 | Smith International, Inc. | Method of producing thin, hard coating |
| US4559121A (en) * | 1983-09-12 | 1985-12-17 | Vac-Tec Systems, Inc. | Method and apparatus for evaporation arc stabilization for permeable targets |
| US4622452A (en) * | 1983-07-21 | 1986-11-11 | Multi-Arc Vacuum Systems, Inc. | Electric arc vapor deposition electrode apparatus |
-
1985
- 1985-06-20 CH CH2610/85A patent/CH664768A5/de not_active IP Right Cessation
-
1986
- 1986-04-28 DE DE19863614384 patent/DE3614384A1/de not_active Ceased
- 1986-05-13 ES ES554902A patent/ES8707311A1/es not_active Expired
- 1986-06-16 IT IT20793/86A patent/IT1189560B/it active
- 1986-06-18 SE SE8602715A patent/SE463461B/sv not_active IP Right Cessation
- 1986-06-19 JP JP61141508A patent/JPH0791654B2/ja not_active Expired - Lifetime
- 1986-06-19 FR FR868608855A patent/FR2583780B1/fr not_active Expired - Lifetime
- 1986-06-19 US US06/876,274 patent/US4749587A/en not_active Expired - Lifetime
- 1986-06-20 GB GB8615066A patent/GB2176808B/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| IT8620793A1 (it) | 1987-12-16 |
| IT1189560B (it) | 1988-02-04 |
| SE8602715D0 (sv) | 1986-06-18 |
| ES554902A0 (es) | 1987-07-16 |
| GB2176808B (en) | 1990-03-21 |
| FR2583780A1 (fr) | 1986-12-26 |
| IT8620793A0 (it) | 1986-06-16 |
| CH664768A5 (de) | 1988-03-31 |
| US4749587A (en) | 1988-06-07 |
| SE8602715L (ja) | 1986-12-21 |
| DE3614384A1 (de) | 1987-01-02 |
| GB2176808A (en) | 1987-01-07 |
| ES8707311A1 (es) | 1987-07-16 |
| GB8615066D0 (en) | 1986-07-23 |
| JPH0791654B2 (ja) | 1995-10-04 |
| FR2583780B1 (fr) | 1991-08-23 |
| JPS61295377A (ja) | 1986-12-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
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| NUG | Patent has lapsed |