SE7708385L - SEMICONDUCTOR COMPONENT - Google Patents

SEMICONDUCTOR COMPONENT

Info

Publication number
SE7708385L
SE7708385L SE7708385A SE7708385A SE7708385L SE 7708385 L SE7708385 L SE 7708385L SE 7708385 A SE7708385 A SE 7708385A SE 7708385 A SE7708385 A SE 7708385A SE 7708385 L SE7708385 L SE 7708385L
Authority
SE
Sweden
Prior art keywords
blocking
voltage
instabilities
protective layer
semiconductor components
Prior art date
Application number
SE7708385A
Other languages
Unknown language ( )
Swedish (sv)
Inventor
J Krausse
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7708385L publication Critical patent/SE7708385L/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/481—Encapsulations, e.g. protective coatings characterised by their materials comprising semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx

Landscapes

  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)

Abstract

Instabilities of the reverse and forward blocking-state characteristics of thyristors and of the blocking-state voltage-current characteristics of diodes and transistors can be ascribed to changes in the properties of the passivating protective layers and/or the semiconductor surface. At that point, where the pn junction reaches the surface, a new protective layer (8) consisting of silicon is vapour-deposited. This makes it possible to eliminate the instabilities and to increase significantly the yield of usable semiconductor components. The passivating protective layer is designed, in particular, for semiconductor components having a high reverse voltage or blocking voltage. <IMAGE>
SE7708385A 1976-07-20 1977-07-20 SEMICONDUCTOR COMPONENT SE7708385L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762632647 DE2632647A1 (en) 1976-07-20 1976-07-20 SEMICONDUCTOR COMPONENT WITH PASSIVATING PROTECTIVE LAYER

Publications (1)

Publication Number Publication Date
SE7708385L true SE7708385L (en) 1978-01-21

Family

ID=5983502

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7708385A SE7708385L (en) 1976-07-20 1977-07-20 SEMICONDUCTOR COMPONENT

Country Status (10)

Country Link
JP (1) JPS5313878A (en)
BR (1) BR7704739A (en)
CA (1) CA1101127A (en)
CH (1) CH614809A5 (en)
CS (1) CS202576B2 (en)
DE (1) DE2632647A1 (en)
FR (1) FR2359510A1 (en)
GB (1) GB1580654A (en)
IT (1) IT1076447B (en)
SE (1) SE7708385L (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2730367A1 (en) * 1977-07-05 1979-01-18 Siemens Ag PROCESS FOR PASSIVATING SEMICONDUCTOR ELEMENTS
CH661932A5 (en) * 1978-09-18 1987-08-31 Gen Electric Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
DE2922005A1 (en) * 1979-05-30 1980-12-04 Siemens Ag SEMICONDUCTOR COMPONENT WITH PASSIVATED SEMICONDUCTOR BODY
DE3021175A1 (en) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PASSIVATING SILICON COMPONENTS
DE3542166A1 (en) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh SEMICONDUCTOR COMPONENT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE1184178B (en) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Process for stabilizing the surface of semiconductor bodies with pn junctions by vacuum evaporation
CH428947A (en) * 1966-01-31 1967-01-31 Centre Electron Horloger Manufacturing process of an integrated circuit
JPS6022497B2 (en) * 1974-10-26 1985-06-03 ソニー株式会社 semiconductor equipment

Also Published As

Publication number Publication date
FR2359510A1 (en) 1978-02-17
IT1076447B (en) 1985-04-27
BR7704739A (en) 1978-04-18
CH614809A5 (en) 1979-12-14
JPS5313878A (en) 1978-02-07
FR2359510B1 (en) 1982-12-31
GB1580654A (en) 1980-12-03
DE2632647A1 (en) 1978-01-26
CA1101127A (en) 1981-05-12
CS202576B2 (en) 1981-01-30

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