SE8100885L - Fotospenningsdetektor av schottky-barrier-typ - Google Patents

Fotospenningsdetektor av schottky-barrier-typ

Info

Publication number: SE8100885L
Authority: SE; Sweden
Prior art keywords: layer; substrate; shield structure; barrier; platinum
Prior art date: 1980-03-07

Application number

SE8100885A

Other languages

English (en)

Other versions

SE459055B (sv

Inventor

G L Harnagel

G T Laga

J M Harrison

V A Twaddell

Original Assignee

Gen Dynamics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-03-07

Filing date

1981-02-09

Publication date

1981-09-08

1981-02-09 Application filed by Gen Dynamics Corp filed Critical Gen Dynamics Corp

1981-09-08 Publication of SE8100885L publication Critical patent/SE8100885L/sv

1989-05-29 Publication of SE459055B publication Critical patent/SE459055B/sv

Links

239000010410 layer Substances 0.000 abstract 7
230000004888 barrier function Effects 0.000 abstract 5
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 4
239000000758 substrate Substances 0.000 abstract 4
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
239000010931 gold Substances 0.000 abstract 2
229910052737 gold Inorganic materials 0.000 abstract 2
229910052697 platinum Inorganic materials 0.000 abstract 2
235000012239 silicon dioxide Nutrition 0.000 abstract 2
239000000377 silicon dioxide Substances 0.000 abstract 2
WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 abstract 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
PMAYAKHWRDUMCW-UHFFFAOYSA-N [Ti].[Ti].[Au] Chemical compound [Ti].[Ti].[Au] PMAYAKHWRDUMCW-UHFFFAOYSA-N 0.000 abstract 1
239000012790 adhesive layer Substances 0.000 abstract 1
229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
ZSJRPSRPYLFQOL-UHFFFAOYSA-N cadmium(2+) platinum(2+) disulfide Chemical compound [S-2].[Cd+2].[Pt+2].[S-2] ZSJRPSRPYLFQOL-UHFFFAOYSA-N 0.000 abstract 1
229910052751 metal Inorganic materials 0.000 abstract 1
239000002184 metal Substances 0.000 abstract 1
238000001465 metallisation Methods 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
230000005855 radiation Effects 0.000 abstract 1
239000010936 titanium Substances 0.000 abstract 1
229910052719 titanium Inorganic materials 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Light Receiving Elements (AREA)
Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Photovoltaic Devices (AREA)

SE8100885A 1980-03-07 1981-02-09 Schottkybarriaerfotodetektor och foerfarande foer dess framstaellning SE459055B (sv)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/128,325 US4319258A (en)	1980-03-07	1980-03-07	Schottky barrier photovoltaic detector

Publications (2)

Publication Number	Publication Date
SE8100885L true SE8100885L (sv)	1981-09-08
SE459055B SE459055B (sv)	1989-05-29

Family

ID=22434786

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE8100885A SE459055B (sv)	1980-03-07	1981-02-09	Schottkybarriaerfotodetektor och foerfarande foer dess framstaellning

Country Status (18)

Country	Link
US (1)	US4319258A (sv)
JP (2)	JPS56135983A (sv)
KR (1)	KR840001796B1 (sv)
AU (1)	AU519933B2 (sv)
BE (1)	BE887599A (sv)
CA (1)	CA1159133A (sv)
CH (1)	CH641913A5 (sv)
DE (2)	DE3106215C2 (sv)
DK (1)	DK157584C (sv)
ES (1)	ES499645A0 (sv)
FR (1)	FR2477779B1 (sv)
IL (1)	IL62119A (sv)
IT (1)	IT1170735B (sv)
MY (1)	MY8500875A (sv)
NL (1)	NL189790C (sv)
NO (1)	NO159627C (sv)
PT (1)	PT72551B (sv)
SE (1)	SE459055B (sv)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4533933A (en) *	1982-12-07	1985-08-06	The United States Of America As Represented By The Secretary Of The Air Force	Schottky barrier infrared detector and process
JPS59161083A (ja) *	1983-02-28	1984-09-11	Yokogawa Hewlett Packard Ltd	フオト・ダイオ−ド
FR2557371B1 (fr) *	1983-12-27	1987-01-16	Thomson Csf	Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication
JPS60253958A (ja) *	1984-05-31	1985-12-14	Sharp Corp	センサ
US4942442A (en) *	1986-04-11	1990-07-17	American Telephone And Telegraph Company, At&T Bell Laboratories	Device including a radiation sensor
US4789645A (en) *	1987-04-20	1988-12-06	Eaton Corporation	Method for fabrication of monolithic integrated circuits
JPS63183128U (sv) *	1987-05-18	1988-11-25
DE3876869D1 (de) *	1987-06-22	1993-02-04	Landis & Gyr Betriebs Ag	Photodetektor fuer ultraviolett und verfahren zur herstellung.
JPH02149632U (sv) *	1989-05-22	1990-12-20
US4990988A (en) *	1989-06-09	1991-02-05	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Laterally stacked Schottky diodes for infrared sensor applications
US5557148A (en) *	1993-03-30	1996-09-17	Tribotech	Hermetically sealed semiconductor device
US5406122A (en) *	1993-10-27	1995-04-11	Hughes Aircraft Company	Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer
KR100211070B1 (ko) *	1994-08-19	1999-07-15	아끼구사 나오유끼	반도체 장치 및 그 제조방법
DE102005027220A1 (de) *	2005-06-13	2006-12-14	Siemens Ag	Festkörperdetektor zur Aufnahme von Röntgenabbildungen
US9985058B2 (en)	2016-09-28	2018-05-29	Raytheon Company	Dual band ultraviolet (UV) and infrared radiation detector
US9929192B1 (en) *	2016-09-28	2018-03-27	Raytheon Company	Ultraviolet (UV) schottky diode detector having single crystal UV radiation detector material bonded directly to a support structure with proper c-axis orientation

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2688564A (en) *	1950-11-22	1954-09-07	Rca Corp	Method of forming cadmium sulfide photoconductive cells
US2820841A (en) *	1956-05-10	1958-01-21	Clevite Corp	Photovoltaic cells and methods of fabricating same
US2844640A (en) *	1956-05-11	1958-07-22	Donald C Reynolds	Cadmium sulfide barrier layer cell
DE1223472B (de) *	1957-10-07	1966-08-25	Lab Fuer Strahlungstechnik G M	Lichtempfindlicher Gleichrichter
NL280579A (sv) *	1961-07-10
BE630443A (sv) *	1962-04-03
US3386894A (en) *	1964-09-28	1968-06-04	Northern Electric Co	Formation of metallic contacts
US3571915A (en) *	1967-02-17	1971-03-23	Clevite Corp	Method of making an integrated solar cell array
US3577631A (en) *	1967-05-16	1971-05-04	Texas Instruments Inc	Process for fabricating infrared detector arrays and resulting article of manufacture
US3560812A (en) *	1968-07-05	1971-02-02	Gen Electric	High selectively electromagnetic radiation detecting devices
US3597270A (en) *	1968-08-15	1971-08-03	Trw Inc	Inverted solid state diode
US3806779A (en) *	1969-10-02	1974-04-23	Omron Tateisi Electronics Co	Semiconductor device and method of making same
NL7007171A (sv) *	1970-05-16	1971-11-18
DE2112812C2 (de) *	1971-03-17	1984-02-09	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung
US3888697A (en) *	1971-10-23	1975-06-10	Licentia Gmbh	Photocell
GB1384028A (en) *	1972-08-21	1974-02-12	Hughes Aircraft Co	Method of making a semiconductor device
US4000502A (en) *	1973-11-05	1976-12-28	General Dynamics Corporation	Solid state radiation detector and process
US3980915A (en) *	1974-02-27	1976-09-14	Texas Instruments Incorporated	Metal-semiconductor diode infrared detector having semi-transparent electrode
JPS50151487A (sv) *	1974-05-24	1975-12-05
US4001858A (en) *	1974-08-28	1977-01-04	Bell Telephone Laboratories, Incorporated	Simultaneous molecular beam deposition of monocrystalline and polycrystalline iii(a)-v(a) compounds to produce semiconductor devices
DE2444490C2 (de)	1974-09-18	1982-08-26	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Verfahren zum Herstellen einer Mikrowellendiode
DE2445548A1 (de) *	1974-09-24	1976-04-01	Baldwin Co D H	Photoelement
US4016643A (en) *	1974-10-29	1977-04-12	Raytheon Company	Overlay metallization field effect transistor
US3969751A (en) *	1974-12-18	1976-07-13	Rca Corporation	Light shield for a semiconductor device comprising blackened photoresist
US4035197A (en) *	1976-03-30	1977-07-12	Eastman Kodak Company	Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
DE2732933C2 (de) *	1977-07-21	1984-11-15	Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach	Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
JPS6244825A (ja) *	1985-08-22	1987-02-26	Nec Corp	端末装置

1980
- 1980-03-07 US US06/128,325 patent/US4319258A/en not_active Expired - Lifetime
1981
- 1981-02-04 CA CA000370052A patent/CA1159133A/en not_active Expired
- 1981-02-09 SE SE8100885A patent/SE459055B/sv not_active IP Right Cessation
- 1981-02-12 IL IL62119A patent/IL62119A/xx not_active IP Right Cessation
- 1981-02-17 AU AU67374/81A patent/AU519933B2/en not_active Ceased
- 1981-02-19 DE DE3106215A patent/DE3106215C2/de not_active Expired
- 1981-02-19 KR KR1019810000528A patent/KR840001796B1/ko not_active Expired
- 1981-02-19 NO NO810570A patent/NO159627C/no unknown
- 1981-02-19 IT IT47840/81A patent/IT1170735B/it active
- 1981-02-19 DE DE3153186A patent/DE3153186C2/de not_active Expired
- 1981-02-19 CH CH111581A patent/CH641913A5/fr not_active IP Right Cessation
- 1981-02-20 BE BE1/10145A patent/BE887599A/fr not_active IP Right Cessation
- 1981-02-20 NL NLAANVRAGE8100868,A patent/NL189790C/xx not_active IP Right Cessation
- 1981-02-20 FR FR8103476A patent/FR2477779B1/fr not_active Expired
- 1981-02-20 ES ES499645A patent/ES499645A0/es active Granted
- 1981-02-20 PT PT72551A patent/PT72551B/pt active IP Right Revival
- 1981-02-20 DK DK077181A patent/DK157584C/da active
- 1981-03-03 JP JP3043581A patent/JPS56135983A/ja active Granted
1985
- 1985-12-30 MY MY875/85A patent/MY8500875A/xx unknown
1986
- 1986-12-25 JP JP61315933A patent/JPS62216276A/ja active Granted

Also Published As

Publication number	Publication date
DK157584B (da)	1990-01-22
IL62119A (en)	1983-11-30
NO159627B (no)	1988-10-10
PT72551A (en)	1981-03-01
NL189790C (nl)	1993-07-16
IT8147840A0 (it)	1981-02-19
NO159627C (no)	1989-01-18
FR2477779A1 (fr)	1981-09-11
IL62119A0 (en)	1981-03-31
NO810570L (no)	1981-09-08
DK77181A (da)	1981-09-08
US4319258A (en)	1982-03-09
ES8206849A1 (es)	1982-08-16
NL8100868A (nl)	1981-10-01
DE3106215C2 (de)	1985-06-27
KR830005727A (ko)	1983-09-09
FR2477779B1 (fr)	1986-04-25
BE887599A (fr)	1981-08-20
JPS62216276A (ja)	1987-09-22
DE3106215A1 (de)	1982-01-21
JPS6244825B2 (sv)	1987-09-22
CA1159133A (en)	1983-12-20
PT72551B (en)	1982-03-12
AU6737481A (en)	1981-09-24
CH641913A5 (fr)	1984-03-15
DK157584C (da)	1990-07-02
JPH0421353B2 (sv)	1992-04-09
SE459055B (sv)	1989-05-29
IT1170735B (it)	1987-06-03
MY8500875A (en)	1985-12-31
DE3153186C2 (de)	1985-10-10
NL189790B (nl)	1993-02-16
ES499645A0 (es)	1982-08-16
JPS56135983A (en)	1981-10-23
KR840001796B1 (ko)	1984-10-20
AU519933B2 (en)	1982-01-07

Legal Events

Date

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1995-01-31

NAL

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