SE9903149L - Disconnecting device - Google Patents

Disconnecting device

Info

Publication number
SE9903149L
SE9903149L SE9903149A SE9903149A SE9903149L SE 9903149 L SE9903149 L SE 9903149L SE 9903149 A SE9903149 A SE 9903149A SE 9903149 A SE9903149 A SE 9903149A SE 9903149 L SE9903149 L SE 9903149L
Authority
SE
Sweden
Prior art keywords
dopants
semiconductor material
layer
energy
irradiation
Prior art date
Application number
SE9903149A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE9903149D0 (en
Inventor
Mark Irwin
Jan Isberg
Peter Isberg
Willy Hermansson
Hans Bernhoff
Erik Johansson
Pan Min
Johan Hammersberg
Toril Myrtveit
Bjoergvin Hjoervarsson
Svante Soederholm
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE9903149A priority Critical patent/SE9903149L/en
Publication of SE9903149D0 publication Critical patent/SE9903149D0/en
Priority to SE9904305A priority patent/SE9904305D0/en
Priority to AU66037/00A priority patent/AU6603700A/en
Priority to PCT/SE2000/001568 priority patent/WO2001018882A1/en
Priority to AU66036/00A priority patent/AU6603600A/en
Priority to PCT/SE2000/001569 priority patent/WO2001018880A1/en
Publication of SE9903149L publication Critical patent/SE9903149L/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Thyristors (AREA)
  • Led Devices (AREA)

Abstract

A switching device has at least one first layer of a semiconductor material with an energy gap between the valence band and the conduction band exceeding 2 eV and adapted to make the device conducting a current upon irradiation thereof by radiation from an irradiation source (14) creating free charge carriers therein for at least one direction of a voltage applied across terminals (1, 2) of the device. The first layer is doped by dopants assuming such deep energy levels in said semiconductor material that the majority thereof will not be thermally activated at room temperature, and the irradiation source is adapted to emit radiation of an energy being high enough for activating said dopants.
SE9903149A 1999-09-06 1999-09-06 Disconnecting device SE9903149L (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9903149A SE9903149L (en) 1999-09-06 1999-09-06 Disconnecting device
SE9904305A SE9904305D0 (en) 1999-09-06 1999-11-26 A use of a semiconductor device, a method of controlling the state of a semiconductor switch and an electrical arrangement
AU66037/00A AU6603700A (en) 1999-09-06 2000-08-11 A use of a semiconductor device, a method for controlling the state of a semiconductor switch and an electrical arrangement
PCT/SE2000/001568 WO2001018882A1 (en) 1999-09-06 2000-08-11 A switching device
AU66036/00A AU6603600A (en) 1999-09-06 2000-08-11 A switching device
PCT/SE2000/001569 WO2001018880A1 (en) 1999-09-06 2000-08-11 A use of a semiconductor device, a method for controlling the state of a semiconductor switch and an electrical arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9903149A SE9903149L (en) 1999-09-06 1999-09-06 Disconnecting device

Publications (2)

Publication Number Publication Date
SE9903149D0 SE9903149D0 (en) 1999-09-06
SE9903149L true SE9903149L (en) 2001-03-07

Family

ID=20416876

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9903149A SE9903149L (en) 1999-09-06 1999-09-06 Disconnecting device

Country Status (3)

Country Link
AU (1) AU6603600A (en)
SE (1) SE9903149L (en)
WO (1) WO2001018882A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
CN103137772B (en) * 2013-01-31 2015-09-23 安徽工业大学 Novel multi-layer-structursilicon silicon carbide photoconductive switch and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
EP0571142A1 (en) * 1992-05-18 1993-11-24 General Electric Company Platinum doped silicon avalanche photodiode
US5663580A (en) * 1996-03-15 1997-09-02 Abb Research Ltd. Optically triggered semiconductor device

Also Published As

Publication number Publication date
SE9903149D0 (en) 1999-09-06
WO2001018882A1 (en) 2001-03-15
AU6603600A (en) 2001-04-10

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