SE9903149L - Kopplaranordning - Google Patents
KopplaranordningInfo
- Publication number
- SE9903149L SE9903149L SE9903149A SE9903149A SE9903149L SE 9903149 L SE9903149 L SE 9903149L SE 9903149 A SE9903149 A SE 9903149A SE 9903149 A SE9903149 A SE 9903149A SE 9903149 L SE9903149 L SE 9903149L
- Authority
- SE
- Sweden
- Prior art keywords
- dopants
- semiconductor material
- layer
- energy
- irradiation
- Prior art date
Links
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
Landscapes
- Thyristors (AREA)
- Led Devices (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9903149A SE9903149L (sv) | 1999-09-06 | 1999-09-06 | Kopplaranordning |
| SE9904305A SE9904305D0 (sv) | 1999-09-06 | 1999-11-26 | A use of a semiconductor device, a method for controlling the state of a semiconductor switch and an electrical arrangement |
| AU66037/00A AU6603700A (en) | 1999-09-06 | 2000-08-11 | A use of a semiconductor device, a method for controlling the state of a semiconductor switch and an electrical arrangement |
| PCT/SE2000/001568 WO2001018882A1 (en) | 1999-09-06 | 2000-08-11 | A switching device |
| AU66036/00A AU6603600A (en) | 1999-09-06 | 2000-08-11 | A switching device |
| PCT/SE2000/001569 WO2001018880A1 (en) | 1999-09-06 | 2000-08-11 | A use of a semiconductor device, a method for controlling the state of a semiconductor switch and an electrical arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9903149A SE9903149L (sv) | 1999-09-06 | 1999-09-06 | Kopplaranordning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE9903149D0 SE9903149D0 (sv) | 1999-09-06 |
| SE9903149L true SE9903149L (sv) | 2001-03-07 |
Family
ID=20416876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9903149A SE9903149L (sv) | 1999-09-06 | 1999-09-06 | Kopplaranordning |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU6603600A (sv) |
| SE (1) | SE9903149L (sv) |
| WO (1) | WO2001018882A1 (sv) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
| CN103137772B (zh) * | 2013-01-31 | 2015-09-23 | 安徽工业大学 | 新型多层结构碳化硅光电导开关及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4782222A (en) * | 1987-09-03 | 1988-11-01 | Power Spectra | Bulk avalanche semiconductor switch using partial light penetration and inducing field compression |
| EP0571142A1 (en) * | 1992-05-18 | 1993-11-24 | General Electric Company | Platinum doped silicon avalanche photodiode |
| US5663580A (en) * | 1996-03-15 | 1997-09-02 | Abb Research Ltd. | Optically triggered semiconductor device |
-
1999
- 1999-09-06 SE SE9903149A patent/SE9903149L/sv not_active Application Discontinuation
-
2000
- 2000-08-11 AU AU66036/00A patent/AU6603600A/en not_active Abandoned
- 2000-08-11 WO PCT/SE2000/001568 patent/WO2001018882A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| SE9903149D0 (sv) | 1999-09-06 |
| WO2001018882A1 (en) | 2001-03-15 |
| AU6603600A (en) | 2001-04-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
Ref document number: 9903149-4 |