SG137657A1 - Method and apparatus for performing model-based layout conversion for use with dipole illumination - Google Patents

Method and apparatus for performing model-based layout conversion for use with dipole illumination

Info

Publication number
SG137657A1
SG137657A1 SG200306762-6A SG2003067626A SG137657A1 SG 137657 A1 SG137657 A1 SG 137657A1 SG 2003067626 A SG2003067626 A SG 2003067626A SG 137657 A1 SG137657 A1 SG 137657A1
Authority
SG
Singapore
Prior art keywords
features
target pattern
horizontal
mask
vertical
Prior art date
Application number
SG200306762-6A
Other languages
English (en)
Inventor
Duan-Fu Stephen Hsu
Kurt E Wampler
Markus Franciscus Ant Eurlings
Jang Fung Chen
Noel Corcoran
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG137657A1 publication Critical patent/SG137657A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200306762-6A 2002-11-12 2003-11-11 Method and apparatus for performing model-based layout conversion for use with dipole illumination SG137657A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42532302P 2002-11-12 2002-11-12

Publications (1)

Publication Number Publication Date
SG137657A1 true SG137657A1 (en) 2007-12-28

Family

ID=32176755

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200306762-6A SG137657A1 (en) 2002-11-12 2003-11-11 Method and apparatus for performing model-based layout conversion for use with dipole illumination

Country Status (8)

Country Link
US (3) US7138212B2 (de)
EP (1) EP1420294B1 (de)
JP (1) JP2004177968A (de)
KR (1) KR100592580B1 (de)
CN (1) CN1530746B (de)
DE (1) DE60323036D1 (de)
SG (1) SG137657A1 (de)
TW (1) TWI284786B (de)

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SG144723A1 (en) * 2003-06-30 2008-08-28 Asml Masktools Bv A method, program product and apparatus for generating assist features utilizing an image field map
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US7395516B2 (en) * 2005-05-20 2008-07-01 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
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US20070087291A1 (en) * 2005-10-18 2007-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography process to reduce interference
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
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US7547495B2 (en) * 2005-12-21 2009-06-16 Asml Netherlands B.V Device manufacturing method and computer program product
US7643976B2 (en) * 2006-02-28 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for identifying lens aberration sensitive patterns in an integrated circuit chip
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US8521481B2 (en) * 2006-08-30 2013-08-27 Asml Masktools B.V. Method, program product and apparatus for modeling resist development of a lithography process
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US7802226B2 (en) * 2007-01-08 2010-09-21 Mentor Graphics Corporation Data preparation for multiple mask printing
KR100818713B1 (ko) * 2007-03-23 2008-04-02 주식회사 하이닉스반도체 노광 과정 중의 스컴을 억제하는 리소그래피 방법
US8713483B2 (en) 2007-06-05 2014-04-29 Mentor Graphics Corporation IC layout parsing for multiple masks
DE102007033243A1 (de) * 2007-07-12 2009-01-15 Carl Zeiss Sms Gmbh Verfahren und Anordnung zur Analyse einer Gruppe von Photolithographiemasken
JP2009093138A (ja) * 2007-09-19 2009-04-30 Canon Inc 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム
EP2040120B1 (de) * 2007-09-19 2011-03-02 Canon Kabushiki Kaisha Maskendatenerzeugungsverfahren, Maskenherstellungsverfahren, Belichtungsverfahren, Vorrichtungsherstellungsverfahren und Programm
US20090091729A1 (en) * 2007-10-05 2009-04-09 Sajan Marokkey Lithography Systems and Methods of Manufacturing Using Thereof
US8715909B2 (en) * 2007-10-05 2014-05-06 Infineon Technologies Ag Lithography systems and methods of manufacturing using thereof
KR100961203B1 (ko) * 2008-04-29 2010-06-09 주식회사 하이닉스반도체 스페이서 패터닝 기술을 이용한 미세 패턴 형성 방법
US8250495B2 (en) * 2009-01-16 2012-08-21 Mentor Graphics Corporation Mask decomposition for double dipole lithography
US8399183B2 (en) * 2009-05-13 2013-03-19 Synopsys, Inc. Patterning a single integrated circuit layer using automatically-generated masks and multiple masking layers
US8805630B2 (en) * 2009-08-25 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for modeling in semiconductor fabrication
US8347240B2 (en) 2010-10-29 2013-01-01 International Business Machines Corporation Split-layer design for double patterning lithography
US8932785B2 (en) * 2012-10-16 2015-01-13 Advanced Mask Technology Center Gmbh & Co. Kg EUV mask set and methods of manufacturing EUV masks and integrated circuits
JP6598421B2 (ja) * 2013-02-22 2019-10-30 キヤノン株式会社 マスクパターンの決定方法、プログラム、情報処理装置
US9262820B2 (en) * 2014-05-19 2016-02-16 United Microelectronics Corporation Method and apparatus for integrated circuit design
KR102390720B1 (ko) * 2015-10-08 2022-04-26 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치의 제어 방법 및 디바이스의 제조 방법, 리소그래피 장치를 위한 제어 시스템 및 리소그래피 장치

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Also Published As

Publication number Publication date
CN1530746A (zh) 2004-09-22
EP1420294A3 (de) 2005-05-04
US7985515B2 (en) 2011-07-26
US20100167183A1 (en) 2010-07-01
US20070042277A1 (en) 2007-02-22
TW200421042A (en) 2004-10-16
DE60323036D1 (de) 2008-10-02
KR100592580B1 (ko) 2006-06-26
US7138212B2 (en) 2006-11-21
TWI284786B (en) 2007-08-01
JP2004177968A (ja) 2004-06-24
EP1420294A2 (de) 2004-05-19
KR20040044339A (ko) 2004-05-28
US7666554B2 (en) 2010-02-23
US20040142251A1 (en) 2004-07-22
EP1420294B1 (de) 2008-08-20
CN1530746B (zh) 2010-04-28

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