SG166074A1 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- SG166074A1 SG166074A1 SG201002723-3A SG2010027233A SG166074A1 SG 166074 A1 SG166074 A1 SG 166074A1 SG 2010027233 A SG2010027233 A SG 2010027233A SG 166074 A1 SG166074 A1 SG 166074A1
- Authority
- SG
- Singapore
- Prior art keywords
- pillar
- shaped semiconductor
- semiconductor layer
- transistor
- vertical
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0172—Manufacturing their gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0188—Manufacturing their isolation regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009100745A JP4487221B1 (ja) | 2009-04-17 | 2009-04-17 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG166074A1 true SG166074A1 (en) | 2010-11-29 |
Family
ID=42351881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG201002723-3A SG166074A1 (en) | 2009-04-17 | 2010-04-16 | Semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8212311B2 (de) |
| EP (1) | EP2242096A3 (de) |
| JP (1) | JP4487221B1 (de) |
| KR (1) | KR101128240B1 (de) |
| CN (1) | CN101866925B (de) |
| SG (1) | SG166074A1 (de) |
| TW (1) | TW201039435A (de) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100946084B1 (ko) * | 2008-03-27 | 2010-03-10 | 주식회사 하이닉스반도체 | 반도체 소자의 수직형 트랜지스터 및 그 형성방법 |
| JP4487221B1 (ja) * | 2009-04-17 | 2010-06-23 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置 |
| JP4577592B2 (ja) | 2009-04-20 | 2010-11-10 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5006378B2 (ja) * | 2009-08-11 | 2012-08-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| JP5128630B2 (ja) * | 2010-04-21 | 2013-01-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| JP2012094762A (ja) * | 2010-10-28 | 2012-05-17 | Elpida Memory Inc | 半導体装置および半導体装置の製造方法 |
| KR20130056897A (ko) * | 2011-09-15 | 2013-05-30 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | 반도체 장치의 제조 방법 및 반도체 장치 |
| US10438836B2 (en) | 2011-11-09 | 2019-10-08 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing a semiconductor device |
| US8759178B2 (en) | 2011-11-09 | 2014-06-24 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US8592921B2 (en) | 2011-12-07 | 2013-11-26 | International Business Machines Corporation | Deep trench embedded gate transistor |
| US8664063B2 (en) * | 2011-12-13 | 2014-03-04 | Unisantis Electronics Singapore Pte. Ltd. | Method of producing a semiconductor device and semiconductor device |
| US9166043B2 (en) | 2012-05-17 | 2015-10-20 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
| US8829601B2 (en) | 2012-05-17 | 2014-09-09 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
| US9012981B2 (en) | 2012-05-17 | 2015-04-21 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
| KR20140009509A (ko) * | 2012-05-18 | 2014-01-22 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | 반도체 장치의 제조 방법 및 반도체 장치 |
| US8877578B2 (en) | 2012-05-18 | 2014-11-04 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device |
| US8697511B2 (en) | 2012-05-18 | 2014-04-15 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device |
| JP5670603B1 (ja) | 2013-04-26 | 2015-02-18 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法及び半導体装置 |
| WO2014184933A1 (ja) | 2013-05-16 | 2014-11-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Ｓｇｔを有する半導体装置の製造方法 |
| US10103154B2 (en) | 2013-05-16 | 2018-10-16 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing an SGT-including semiconductor device |
| JP5680801B1 (ja) * | 2013-06-10 | 2015-03-04 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| JP5973665B2 (ja) | 2013-06-13 | 2016-08-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | Ｓｇｔを有する半導体装置とその製造方法 |
| WO2014203304A1 (ja) | 2013-06-17 | 2014-12-24 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置の製造方法、及び、半導体装置 |
| JP5686932B1 (ja) * | 2013-07-30 | 2015-03-18 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| JP5686931B1 (ja) * | 2013-07-30 | 2015-03-18 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| JP5677642B1 (ja) * | 2013-08-08 | 2015-02-25 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| JP5677643B1 (ja) * | 2013-08-08 | 2015-02-25 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
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| WO2015132912A1 (ja) * | 2014-03-05 | 2015-09-11 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置の製造方法、及び、半導体装置 |
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| JP6080933B2 (ja) * | 2015-10-28 | 2017-02-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| US10535756B2 (en) | 2015-12-18 | 2020-01-14 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing pillar-shaped semiconductor device |
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| US6956256B2 (en) * | 2003-03-04 | 2005-10-18 | Micron Technology Inc. | Vertical gain cell |
| JP5030373B2 (ja) * | 2004-08-25 | 2012-09-19 | 三菱重工業株式会社 | 半導体回路 |
| JP4720307B2 (ja) * | 2005-06-15 | 2011-07-13 | 富士電機システムズ株式会社 | 半導体装置の製造方法 |
| JP2007250652A (ja) * | 2006-03-14 | 2007-09-27 | Sharp Corp | 半導体装置 |
| KR101243890B1 (ko) * | 2006-04-10 | 2013-03-20 | 삼성전자주식회사 | 유효 채널 길이를 증가시키기 위한 ｃｍｏｓ 인버터 레이아웃 |
| JP2008072197A (ja) * | 2006-09-12 | 2008-03-27 | Renesas Technology Corp | 半導体集積回路装置 |
| JP5114968B2 (ja) * | 2007-02-20 | 2013-01-09 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| JP5130596B2 (ja) * | 2007-05-30 | 2013-01-30 | 国立大学法人東北大学 | 半導体装置 |
| JP5122212B2 (ja) * | 2007-08-02 | 2013-01-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| JP2009081163A (ja) | 2007-09-25 | 2009-04-16 | Elpida Memory Inc | 半導体装置およびその製造方法 |
| US8188537B2 (en) * | 2008-01-29 | 2012-05-29 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
| JP5317343B2 (ja) * | 2009-04-28 | 2013-10-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| US8476132B2 (en) * | 2008-01-29 | 2013-07-02 | Unisantis Electronics Singapore Pte Ltd. | Production method for semiconductor device |
| US8212298B2 (en) * | 2008-01-29 | 2012-07-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor storage device and methods of producing it |
| US8598650B2 (en) * | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
| US8026141B2 (en) * | 2008-02-08 | 2011-09-27 | Unisantis Electronics (Japan) Ltd. | Method of producing semiconductor |
| US8211809B2 (en) * | 2008-09-02 | 2012-07-03 | Unisantis Electronics Singapore Pte Ltd. | Method of producing semiconductor device |
| JP4487221B1 (ja) * | 2009-04-17 | 2010-06-23 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置 |
| JP5128630B2 (ja) * | 2010-04-21 | 2013-01-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
-
2009
- 2009-04-17 JP JP2009100745A patent/JP4487221B1/ja not_active Expired - Fee Related
-
2010
- 2010-04-15 US US12/761,012 patent/US8212311B2/en active Active
- 2010-04-15 KR KR1020100034579A patent/KR101128240B1/ko active Active
- 2010-04-15 EP EP10004017.9A patent/EP2242096A3/de not_active Withdrawn
- 2010-04-15 TW TW099111752A patent/TW201039435A/zh unknown
- 2010-04-16 CN CN2010101656363A patent/CN101866925B/zh active Active
- 2010-04-16 SG SG201002723-3A patent/SG166074A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN101866925A (zh) | 2010-10-20 |
| EP2242096A2 (de) | 2010-10-20 |
| KR101128240B1 (ko) | 2012-03-23 |
| JP2010251586A (ja) | 2010-11-04 |
| CN101866925B (zh) | 2012-05-30 |
| TW201039435A (en) | 2010-11-01 |
| US20100264484A1 (en) | 2010-10-21 |
| JP4487221B1 (ja) | 2010-06-23 |
| KR20100115308A (ko) | 2010-10-27 |
| EP2242096A3 (de) | 2013-07-31 |
| US8212311B2 (en) | 2012-07-03 |
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