SG43924A1 - Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride - Google Patents

Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride

Info

Publication number
SG43924A1
SG43924A1 SG1996005608A SG1996005608A SG43924A1 SG 43924 A1 SG43924 A1 SG 43924A1 SG 1996005608 A SG1996005608 A SG 1996005608A SG 1996005608 A SG1996005608 A SG 1996005608A SG 43924 A1 SG43924 A1 SG 43924A1
Authority
SG
Singapore
Prior art keywords
deposited film
main component
film containing
forming metal
metal deposited
Prior art date
Application number
SG1996005608A
Other languages
English (en)
Inventor
Hitoshi Shindo
Kazuaki Ohmi
Osamu Ikeda
Shigeyuki Matsumoto
Takeshi Ichikawa
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1250013A external-priority patent/JP2801285B2/ja
Priority claimed from JP1250012A external-priority patent/JP2721013B2/ja
Priority claimed from JP25001489A external-priority patent/JP2670152B2/ja
Priority claimed from JP25001189A external-priority patent/JP2670151B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG43924A1 publication Critical patent/SG43924A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
SG1996005608A 1989-09-26 1990-09-25 Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride SG43924A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1250013A JP2801285B2 (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP1250012A JP2721013B2 (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP25001489A JP2670152B2 (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP25001189A JP2670151B2 (ja) 1989-09-26 1989-09-26 堆積膜形成法

Publications (1)

Publication Number Publication Date
SG43924A1 true SG43924A1 (en) 1997-11-14

Family

ID=27478182

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996005608A SG43924A1 (en) 1989-09-26 1990-09-25 Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride

Country Status (8)

Country Link
US (1) US5154949A (fr)
EP (1) EP0420594B1 (fr)
KR (1) KR940007075B1 (fr)
AT (1) ATE137063T1 (fr)
DE (1) DE69026566T2 (fr)
MY (1) MY107403A (fr)
PT (1) PT95434B (fr)
SG (1) SG43924A1 (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
DE69120446T2 (de) * 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
DE69125210T2 (de) * 1990-05-31 1997-08-07 Canon Kk Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
DE69123175T2 (de) * 1990-05-31 1997-04-03 Canon Kk Verfahren zur Verdrahtung einer Halbleiterschaltung
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
JP2974376B2 (ja) * 1990-06-01 1999-11-10 キヤノン株式会社 半導体装置の製造方法
EP0498580A1 (fr) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Méthode dépôt d'un film métallique contenant de l'aluminium en utilisant un halide d'alkylaluminium
JPH0521385A (ja) * 1991-07-10 1993-01-29 Nippon Steel Corp アルミニウム合金薄膜の製造方法
US5627345A (en) * 1991-10-24 1997-05-06 Kawasaki Steel Corporation Multilevel interconnect structure
US6004885A (en) * 1991-12-26 1999-12-21 Canon Kabushiki Kaisha Thin film formation on semiconductor wafer
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
US5403620A (en) * 1992-10-13 1995-04-04 Regents Of The University Of California Catalysis in organometallic CVD of thin metal films
US5358901A (en) * 1993-03-01 1994-10-25 Motorola, Inc. Process for forming an intermetallic layer
US5654245A (en) * 1993-03-23 1997-08-05 Sharp Microelectronics Technology, Inc. Implantation of nucleating species for selective metallization and products thereof
JPH0710935U (ja) * 1993-07-24 1995-02-14 ヤマハ株式会社 縦型熱処理炉
JPH07159974A (ja) * 1993-12-09 1995-06-23 Ryoden Semiconductor Syst Eng Kk パターン転写マスクおよびその製造方法
US5650198A (en) * 1995-08-18 1997-07-22 The Regents Of The University Of California Defect reduction in the growth of group III nitrides
US6077571A (en) * 1995-12-19 2000-06-20 The Research Foundation Of State University Of New York Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation
US6040613A (en) 1996-01-19 2000-03-21 Micron Technology, Inc. Antireflective coating and wiring line stack
JP3695606B2 (ja) * 1996-04-01 2005-09-14 忠弘 大見 半導体装置及びその製造方法
US8053274B2 (en) * 2008-09-30 2011-11-08 Stion Corporation Self cleaning large scale method and furnace system for selenization of thin film photovoltaic materials
US9145612B2 (en) * 2012-07-06 2015-09-29 Applied Materials, Inc. Deposition of N-metal films comprising aluminum alloys

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2559030B2 (ja) * 1986-07-25 1996-11-27 日本電信電話株式会社 金属薄膜の製造方法
JPH01252776A (ja) * 1988-03-31 1989-10-09 Sony Corp 気相成長アルミニウム膜形成方法
JP2570839B2 (ja) * 1988-12-22 1997-01-16 日本電気株式会社 Ａ▲ｌ▼ーＣｕ合金薄膜形成方法
JPH02185026A (ja) * 1989-01-11 1990-07-19 Nec Corp Ａｌ薄膜の選択的形成方法

Also Published As

Publication number Publication date
DE69026566T2 (de) 1996-11-14
PT95434B (pt) 1997-07-31
EP0420594A2 (fr) 1991-04-03
KR940007075B1 (ko) 1994-08-04
EP0420594B1 (fr) 1996-04-17
EP0420594A3 (en) 1991-08-28
PT95434A (pt) 1991-05-22
ATE137063T1 (de) 1996-05-15
MY107403A (en) 1995-11-30
DE69026566D1 (de) 1996-05-23
KR910007093A (ko) 1991-04-30
US5154949A (en) 1992-10-13

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