SG54606A1 - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG54606A1
SG54606A1 SG1997004210A SG1997004210A SG54606A1 SG 54606 A1 SG54606 A1 SG 54606A1 SG 1997004210 A SG1997004210 A SG 1997004210A SG 1997004210 A SG1997004210 A SG 1997004210A SG 54606 A1 SG54606 A1 SG 54606A1
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG1997004210A
Other languages
English (en)
Inventor
Shirou Miura
Atsunori Kawamura
Kazusei Tamai
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32561696A external-priority patent/JPH10172935A/ja
Priority claimed from JP32561496A external-priority patent/JPH10172934A/ja
Priority claimed from JP32561996A external-priority patent/JPH10172937A/ja
Priority claimed from JP32561896A external-priority patent/JPH10172936A/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG54606A1 publication Critical patent/SG54606A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG1997004210A 1996-12-05 1997-12-01 Polishing composition SG54606A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32561696A JPH10172935A (ja) 1996-12-05 1996-12-05 研磨用組成物
JP32561496A JPH10172934A (ja) 1996-12-05 1996-12-05 研磨用組成物
JP32561996A JPH10172937A (ja) 1996-12-05 1996-12-05 研磨用組成物
JP32561896A JPH10172936A (ja) 1996-12-05 1996-12-05 研磨用組成物

Publications (1)

Publication Number Publication Date
SG54606A1 true SG54606A1 (en) 1998-11-16

Family

ID=27480359

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997004210A SG54606A1 (en) 1996-12-05 1997-12-01 Polishing composition

Country Status (6)

Country Link
US (1) US6027669A (fr)
EP (1) EP0846741A1 (fr)
KR (1) KR19980063805A (fr)
CN (4) CN1185471A (fr)
SG (1) SG54606A1 (fr)
TW (1) TW373015B (fr)

Families Citing this family (61)

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US6149696A (en) * 1997-11-06 2000-11-21 Komag, Inc. Colloidal silica slurry for NiP plated disk polishing
JP4163785B2 (ja) 1998-04-24 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
JP4113282B2 (ja) * 1998-05-07 2008-07-09 スピードファム株式会社 研磨組成物及びそれを用いたエッジポリッシング方法
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP4163788B2 (ja) * 1998-06-25 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
FR2781922B1 (fr) * 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
JP2000080350A (ja) 1998-09-07 2000-03-21 Speedfam-Ipec Co Ltd 研磨用組成物及びそれによるポリッシング加工方法
US6447693B1 (en) * 1998-10-21 2002-09-10 W. R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
AU1219600A (en) * 1998-10-21 2000-05-08 W.R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
SG78405A1 (en) * 1998-11-17 2001-02-20 Fujimi Inc Polishing composition and rinsing composition
SG73683A1 (en) * 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
KR100574259B1 (ko) * 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
TW486514B (en) 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6595834B2 (en) 1999-06-25 2003-07-22 Corning Incorporated Method of making <200nm light transmitting optical fluoride crystals for transmitting less than 200nm light
JP3721497B2 (ja) 1999-07-15 2005-11-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
CN1125861C (zh) * 1999-07-16 2003-10-29 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
US6159077A (en) * 1999-07-30 2000-12-12 Corning Incorporated Colloidal silica polishing abrasive
US6458289B1 (en) * 1999-10-06 2002-10-01 Agere Systems Guardian Corp. CMP slurry for polishing semiconductor wafers and related methods
US6436830B1 (en) 1999-10-06 2002-08-20 Agere Systems Guardian Corp. CMP system for polishing semiconductor wafers and related method
US7229927B1 (en) 1999-11-23 2007-06-12 Corning Incorporated Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics
JP3563017B2 (ja) 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 研磨組成物、研磨組成物の製造方法及びポリシング方法
DE10060697B4 (de) 2000-12-07 2005-10-06 Siltronic Ag Doppelseiten-Polierverfahren mit reduzierter Kratzerrate und Vorrichtung zur Durchführung des Verfahrens
US6669536B2 (en) 2000-12-11 2003-12-30 Corning Incorporated Method of making optical fluoride laser crystal components
US6612911B2 (en) 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US6726534B1 (en) 2001-03-01 2004-04-27 Cabot Microelectronics Corporation Preequilibrium polishing method and system
US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
JP3804009B2 (ja) * 2001-10-01 2006-08-02 触媒化成工業株式会社 研磨用シリカ粒子分散液、その製造方法および研磨材
US6805812B2 (en) 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
JP2003142435A (ja) 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
KR101004525B1 (ko) * 2002-08-19 2010-12-31 호야 가부시키가이샤 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크
DE10239144A1 (de) * 2002-08-27 2004-03-18 Degussa Ag Dispersion
JP2004247428A (ja) * 2003-02-12 2004-09-02 Fujimi Inc 研磨用組成物及びそれを用いる研磨方法
JP4202172B2 (ja) * 2003-03-31 2008-12-24 株式会社フジミインコーポレーテッド 研磨用組成物
CN100490084C (zh) * 2003-05-09 2009-05-20 三洋化成工业株式会社 Cmp方法用研磨液及研磨方法
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US20050087451A1 (en) * 2003-10-24 2005-04-28 Berman Michael J. Abrasive electrolyte
US20050109980A1 (en) * 2003-11-25 2005-05-26 Hongyu Wang Polishing composition for CMP having abrasive particles
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR100640600B1 (ko) * 2003-12-12 2006-11-01 삼성전자주식회사 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법
US20100009889A1 (en) * 2004-04-20 2010-01-14 Smith William L Dry Delivery Hypochlorite
JP4808394B2 (ja) * 2004-10-29 2011-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
JP4955253B2 (ja) * 2005-06-02 2012-06-20 日本化学工業株式会社 デバイスウエハエッジ研磨用研磨組成物、その製造方法、及び研磨加工方法
US20070039926A1 (en) * 2005-08-17 2007-02-22 Cabot Microelectronics Corporation Abrasive-free polishing system
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
JP2007103514A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨用組成物及び研磨方法
WO2007047454A2 (fr) * 2005-10-14 2007-04-26 Applied Materials, Inc. Procede et composition de polissage mecanique electrochimique
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
CN101368070A (zh) * 2007-08-15 2009-02-18 江苏海迅实业集团股份有限公司 微晶玻璃加工用的纳米二氧化硅磨料抛光液
DE102008044646B4 (de) 2008-08-27 2011-06-22 Siltronic AG, 81737 Verfahren zur Herstellung einer Halbleiterscheibe
DE102009058436A1 (de) 2009-12-16 2011-01-20 Siltronic Ag Verfahren zur beidseitigen Politur einer Halbleiterscheibe
CN102101981B (zh) * 2009-12-18 2014-08-20 安集微电子（上海）有限公司 一种用于介质材料平坦化的抛光液
JP5168387B2 (ja) * 2011-06-08 2013-03-21 旭硝子株式会社 磁気記録媒体用ガラス基板の製造方法
CN102967632B (zh) * 2012-11-30 2016-01-20 淄博包钢灵芝稀土高科技股份有限公司 用电导率指导抛光粉生产和产品质量控制的方法
CN105778775B (zh) * 2014-12-23 2021-03-02 安集微电子（上海）有限公司 一种中性胶体二氧化硅的制备方法
JPWO2020262628A1 (fr) * 2019-06-27 2020-12-30
CN111644989B (zh) * 2020-07-01 2022-01-25 东莞市亚马电子有限公司 一种抛光盘用抛光材料及其制备方法

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SU457712A1 (ru) * 1973-04-06 1975-01-25 Предприятие П/Я Х-5594 Состав дл полировани
SU859406A1 (ru) * 1979-12-20 1981-08-30 Бийский Лакокрасочный Завод Состав дл очистки лакокрасочных покрытий
SU943264A1 (ru) * 1980-09-25 1982-07-15 Всесоюзный заочный машиностроительный институт Состав дл шлифовани и полировани кристаллов
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
RU1781270C (ru) * 1990-05-14 1992-12-15 Калушское Опытное Производство Института Химии Поверхности Ан Усср Состав дл химико-механического полировани кремниевых пластин
ATE120433T1 (de) * 1991-05-28 1995-04-15 Nalco Chemical Co Polierbreie aus silika mit geringem gehalt an natrium und an metallen.
US5376222A (en) * 1991-09-04 1994-12-27 Fujitsu Limited Polishing method for polycrystalline silicon
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
JPH06163490A (ja) * 1992-11-19 1994-06-10 Nippon Steel Corp Ｓｉウエハの鏡面加工法
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
JPH08107094A (ja) * 1994-10-05 1996-04-23 Toshiba Corp 基板の洗浄方法
JPH08267356A (ja) * 1995-04-04 1996-10-15 Mitsubishi Materials Shilicon Corp 二酸化シリコン膜用研磨剤および二酸化シリコン膜の研磨方法ならびに張り合わせ半導体基板の作製方法

Also Published As

Publication number Publication date
TW373015B (en) 1999-11-01
CN1343750A (zh) 2002-04-10
US6027669A (en) 2000-02-22
CN1185471A (zh) 1998-06-24
KR19980063805A (ko) 1998-10-07
EP0846741A1 (fr) 1998-06-10
CN1343752A (zh) 2002-04-10
CN1343751A (zh) 2002-04-10

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