SG59964A1 - Process for forming deposited film and process for preparing semiconductor device - Google Patents

Process for forming deposited film and process for preparing semiconductor device

Info

Publication number
SG59964A1
SG59964A1 SG1996006443A SG1996006443A SG59964A1 SG 59964 A1 SG59964 A1 SG 59964A1 SG 1996006443 A SG1996006443 A SG 1996006443A SG 1996006443 A SG1996006443 A SG 1996006443A SG 59964 A1 SG59964 A1 SG 59964A1
Authority
SG
Singapore
Prior art keywords
deposited film
semiconductor device
preparing semiconductor
forming deposited
electron donative
Prior art date
Application number
SG1996006443A
Other languages
English (en)
Inventor
Kazuaki Ohmi
Osamu Ikeda
Shigeyuki Matsumoto
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1250017A external-priority patent/JPH03111570A/ja
Priority claimed from JP1250018A external-priority patent/JPH03110840A/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG59964A1 publication Critical patent/SG59964A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
SG1996006443A 1989-09-26 1990-09-25 Process for forming deposited film and process for preparing semiconductor device SG59964A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1250017A JPH03111570A (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP1250018A JPH03110840A (ja) 1989-09-26 1989-09-26 堆積膜形成法

Publications (1)

Publication Number Publication Date
SG59964A1 true SG59964A1 (en) 1999-02-22

Family

ID=26539605

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996006443A SG59964A1 (en) 1989-09-26 1990-09-25 Process for forming deposited film and process for preparing semiconductor device

Country Status (8)

Country Link
US (1) US6025243A (de)
EP (1) EP0420589B1 (de)
KR (1) KR940006665B1 (de)
AT (1) ATE134070T1 (de)
DE (1) DE69025252T2 (de)
MY (1) MY110288A (de)
PT (1) PT95436B (de)
SG (1) SG59964A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW310461B (de) * 1995-11-10 1997-07-11 Matsushita Electric Industrial Co Ltd
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
JP4592373B2 (ja) * 2004-09-30 2010-12-01 株式会社トリケミカル研究所 導電性モリブデンナイトライドゲート電極膜の形成方法
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP2019145589A (ja) * 2018-02-16 2019-08-29 東芝メモリ株式会社 半導体装置の製造方法
KR20250109239A (ko) 2018-12-05 2025-07-16 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
US12261081B2 (en) 2019-02-13 2025-03-25 Lam Research Corporation Tungsten feature fill with inhibition control
EP4430226A4 (de) * 2021-11-10 2025-11-05 Entegris Inc Molybdänvorläuferverbindungen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE73869T1 (de) * 1985-05-10 1992-04-15 Gen Electric Verfahren und vorrichtung zum selektiven chemischen aufdampfen.
JPS62281349A (ja) * 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd 金属パタ−ン膜の形成方法及びその装置
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0420589A2 (de) 1991-04-03
PT95436A (pt) 1991-05-22
KR910007073A (ko) 1991-04-30
DE69025252D1 (de) 1996-03-21
EP0420589B1 (de) 1996-02-07
EP0420589A3 (en) 1991-08-21
ATE134070T1 (de) 1996-02-15
PT95436B (pt) 1997-07-31
DE69025252T2 (de) 1996-07-04
KR940006665B1 (ko) 1994-07-25
MY110288A (en) 1998-04-30
US6025243A (en) 2000-02-15

Similar Documents

Publication Publication Date Title
EP0250603A4 (de) Verfahren zur bildung einer dünnschicht mit halbleitermaterial.
EP0420589A3 (en) Process for forming deposited film and process for preparing semiconductor device
AU3385489A (en) Diamond growth
AU7151587A (en) Process for forming deposited film
ATE181968T1 (de) Verfahren zur herstellung von siliziumkarbid- filmen unter verwendung von einzelnen siliziumorganischen verbindungen
JPS57158370A (en) Formation of metallic thin film
EP0727826A3 (de) Herstellungsverfahren für einen dünnen Halbleiterfilm und Plasma-CVD-Gerät zur Verwendung in diesen Verfahren
WO1992002662A3 (en) Process for forming crack-free pyrolytic boron nitride on a carbon structure and article
SG43276A1 (en) Process for forming deposited film and process for producing semiconductor device
MY110289A (en) Process for the vapor deposition of polysilanes.
EP0132322A3 (de) Thermische Crack-Anlage zur Herstellung von Pnictidfilmen in Hochvakuumverfahren
EP0342063A3 (de) Verfahren zur Herstellung eines elektrolumineszenten Films
JPS649614A (en) Method of forming semiconductor film containing amorphous silicon
ZA919693B (en) Metal growth accelerator shell for the chemical vaporization deposition of diamond
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS57152132A (en) Chemical vapor growing method
JPS6462484A (en) Method for flattening diamond film
US5026575A (en) Growth of polycrystalline CaF2 via low temperature OMCVD
JPS5589467A (en) Growth of aluminum in gaseous phase
JPS6439719A (en) Epitaxial growth
JPS57149776A (en) Formation of high-melting point metal and silicon compound thin film
CA2154809A1 (en) Method of Promoting the Decomposition of Silicon Compounds in a Process for Depositing Silicon Upon a Metal Surface
JPS6451620A (en) Vapor growth method
JPS6421074A (en) Method for selectively growing thin metallic film
JPS55148420A (en) Manufacturing of carbonized silicon crystal layer