SU882247A1 - Способ выращивания монокристаллического sic - Google Patents

Способ выращивания монокристаллического sic

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Publication number
SU882247A1
SU882247A1 SU2949811/26A SU2949811A SU882247A1 SU 882247 A1 SU882247 A1 SU 882247A1 SU 2949811/26 A SU2949811/26 A SU 2949811/26A SU 2949811 A SU2949811 A SU 2949811A SU 882247 A1 SU882247 A1 SU 882247A1
Authority
SU
USSR - Soviet Union
Prior art keywords
sic
monocrystalline sic
growing monocrystalline
growing
sublimation
Prior art date
Application number
SU2949811/26A
Other languages
English (en)
Inventor
Ю.А. Водаков
Е.Н. Мохов
М.Г. Рамм
А.Д. Роенков
Original Assignee
Физико-технический институт им. А.Ф.Иоффе
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Физико-технический институт им. А.Ф.Иоффе filed Critical Физико-технический институт им. А.Ф.Иоффе
Priority to SU2949811/26A priority Critical patent/SU882247A1/ru
Application granted granted Critical
Publication of SU882247A1 publication Critical patent/SU882247A1/ru

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Способ выращивания монокристаллического SiC, включающий сублимацию источника SiC, размещенного в тигле, на подложку SiC при 1600 - 2000С, отличающийся тем, что, с целью снижения плотности дефектов типа пор, дислокаций и включений второй фазы и увеличения объема кристаллов, сублимацию ведут в присутствии Та, взятого в количестве ≥ 1% от веса источника.
SU2949811/26A 1980-07-02 1980-07-02 Способ выращивания монокристаллического sic SU882247A1 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU2949811/26A SU882247A1 (ru) 1980-07-02 1980-07-02 Способ выращивания монокристаллического sic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU2949811/26A SU882247A1 (ru) 1980-07-02 1980-07-02 Способ выращивания монокристаллического sic

Publications (1)

Publication Number Publication Date
SU882247A1 true SU882247A1 (ru) 1996-11-20

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Application Number Title Priority Date Filing Date
SU2949811/26A SU882247A1 (ru) 1980-07-02 1980-07-02 Способ выращивания монокристаллического sic

Country Status (1)

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SU (1) SU882247A1 (ru)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344085B2 (en) 1998-07-14 2002-02-05 Siemens Aktiengesellschaft Device and method for producing at least one SiC single crystal
US6537371B2 (en) 1997-01-22 2003-03-25 The Fox Group, Inc. Niobium crucible fabrication and treatment
US6547877B2 (en) 1996-01-22 2003-04-15 The Fox Group, Inc. Tantalum crucible fabrication and treatment
US6562130B2 (en) 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
US6562131B2 (en) 1999-07-20 2003-05-13 The Fox Group, Inc. Method for growing single crystal silicon carbide
RU2324019C2 (ru) * 2006-05-02 2008-05-10 Билал Аругович Билалов Тигель для эпитаксии карбида кремния
US11046582B2 (en) * 2019-11-11 2021-06-29 Industrial Technology Research Institute Method of purifying silicon carbide powder

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6547877B2 (en) 1996-01-22 2003-04-15 The Fox Group, Inc. Tantalum crucible fabrication and treatment
US6537371B2 (en) 1997-01-22 2003-03-25 The Fox Group, Inc. Niobium crucible fabrication and treatment
US6562130B2 (en) 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
US6344085B2 (en) 1998-07-14 2002-02-05 Siemens Aktiengesellschaft Device and method for producing at least one SiC single crystal
US6562131B2 (en) 1999-07-20 2003-05-13 The Fox Group, Inc. Method for growing single crystal silicon carbide
RU2324019C2 (ru) * 2006-05-02 2008-05-10 Билал Аругович Билалов Тигель для эпитаксии карбида кремния
US11046582B2 (en) * 2019-11-11 2021-06-29 Industrial Technology Research Institute Method of purifying silicon carbide powder

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