TR200200080T2 - Entegre devre - Google Patents

Entegre devre

Info

Publication number
TR200200080T2
TR200200080T2 TR2002/00080T TR200200080T TR200200080T2 TR 200200080 T2 TR200200080 T2 TR 200200080T2 TR 2002/00080 T TR2002/00080 T TR 2002/00080T TR 200200080 T TR200200080 T TR 200200080T TR 200200080 T2 TR200200080 T2 TR 200200080T2
Authority
TR
Turkey
Prior art keywords
integrated circuit
gyrator
transistor
allows
effects
Prior art date
Application number
TR2002/00080T
Other languages
English (en)
Inventor
Mattisson Sven
Geis Henrik
Original Assignee
Telefonaktiebolaget L M Ericsson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget L M Ericsson filed Critical Telefonaktiebolaget L M Ericsson
Publication of TR200200080T2 publication Critical patent/TR200200080T2/tr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/40—Impedance converters
    • H03H11/42—Gyrators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H03H11/08—Frequency selective two-port networks using gyrators

Landscapes

  • Networks Using Active Elements (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Amplifiers (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

Bulus, jiratör çekirdegindeki her transistörün (tercihan MOS cihazlari), kendilerine birlesik seri geri-beslemeye sahip oldugu bir entegre jiratör yapisina iliskindir. Bu uygulama, MOS transistörlerinde kanal gecikmesinin etkilerinin büyük bir bant-genisligi üzerinde telafi edilmesine olanak saglamaktadir.
TR2002/00080T 1999-07-16 2000-07-05 Entegre devre TR200200080T2 (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9916808A GB2352102B (en) 1999-07-16 1999-07-16 Integrated circuit

Publications (1)

Publication Number Publication Date
TR200200080T2 true TR200200080T2 (tr) 2002-06-21

Family

ID=10857439

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2002/00080T TR200200080T2 (tr) 1999-07-16 2000-07-05 Entegre devre

Country Status (14)

Country Link
US (1) US6577212B1 (tr)
EP (1) EP1201032B1 (tr)
JP (1) JP2003505907A (tr)
CN (1) CN100345376C (tr)
AT (1) ATE262237T1 (tr)
AU (1) AU6431900A (tr)
DE (1) DE60009080T2 (tr)
GB (1) GB2352102B (tr)
HK (1) HK1048398B (tr)
IL (1) IL147515A0 (tr)
MX (1) MXPA02000394A (tr)
MY (1) MY133239A (tr)
TR (1) TR200200080T2 (tr)
WO (1) WO2001006648A1 (tr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6665403B1 (en) * 1999-05-11 2003-12-16 Agere Systems Inc. Digital gyrator
GB0200094D0 (en) * 2002-01-04 2002-02-20 Koninkl Philips Electronics Nv Balanced gyrator and devices including the balanced gyrator
DE102006043833A1 (de) * 2006-09-19 2008-03-27 Valeo Schalter Und Sensoren Gmbh Schaltungsanordnung zum Schutz eines Verbrauchers in einem Gleichspannungsnetz
KR100921517B1 (ko) * 2006-12-05 2009-10-15 한국전자통신연구원 Ｎａｕｔａ 연산 상호 컨덕턴스 증폭기
US8242863B2 (en) * 2008-08-15 2012-08-14 Infineon Technologies Ag Active inductance for very high frequencies based on CMOS inverters
US8897722B2 (en) * 2009-09-11 2014-11-25 Broadcom Corporation RF front-end with wideband transmitter/receiver isolation
US8723625B2 (en) * 2009-12-18 2014-05-13 Electronics And Telecommunications Research Institute Amplification cell employing linearization method and active inductor using the same
KR101462158B1 (ko) * 2009-12-18 2014-12-04 한국전자통신연구원 선형화 기법을 적용한 증폭 셀 및 이를 이용한 능동 인덕터
US8514035B2 (en) 2009-12-30 2013-08-20 Broadcom Corporation RF front-end with on-chip transmitter/receiver isolation using a gyrator
CN113884204B (zh) * 2021-10-22 2024-05-28 合肥艾创微电子科技有限公司 一种电机驱动系统中将温度变化量转换为电压变化量的电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6501840A (tr) * 1965-02-13 1966-08-15
US3518584A (en) * 1968-07-25 1970-06-30 Bell Telephone Labor Inc Gyrator circuit utilizing a plurality of cascaded pairs of insulated-gate,field effect transistors
GB1277495A (en) * 1968-10-12 1972-06-14 Telefunken Patent Improvements in or relating to gyrators
BE793715A (fr) * 1972-01-06 1973-05-02 Western Electric Co Reseau de transmission
US3840829A (en) * 1973-02-02 1974-10-08 E Hochmair Integrated p-channel mos gyrator
GB1531447A (en) * 1974-11-14 1978-11-08 Philips Electronic Associated Three-port circulator or gyrator circuit arrangement
GB2049332B (en) * 1979-04-30 1983-03-30 Philips Electronic Associated Active filter
GB2049333B (en) * 1979-05-09 1983-06-15 Philips Electronic Associated Active filter
JPS6030210A (ja) * 1983-07-29 1985-02-15 Toshiba Corp ジヤイレ−タ
GB2230155A (en) * 1989-03-31 1990-10-10 Plessey Co Plc Voltage-controlled current source
US5117205A (en) * 1990-05-01 1992-05-26 U.S. Philips Corporation Electrically controllable oscillator circuit, and electrically controllable filter arrangement comprising said circuits
US5371475A (en) * 1993-06-03 1994-12-06 Northern Telecom Limited Low noise oscillators and tracking filters
GB2307124B (en) * 1995-11-01 1999-04-28 Plessey Semiconductors Ltd Active filter stack

Also Published As

Publication number Publication date
DE60009080T2 (de) 2005-01-27
JP2003505907A (ja) 2003-02-12
US6577212B1 (en) 2003-06-10
EP1201032A1 (en) 2002-05-02
MY133239A (en) 2007-10-31
GB9916808D0 (en) 1999-09-22
MXPA02000394A (es) 2002-07-02
EP1201032B1 (en) 2004-03-17
HK1048398A1 (en) 2003-03-28
IL147515A0 (en) 2002-08-14
CN1361940A (zh) 2002-07-31
AU6431900A (en) 2001-02-05
WO2001006648A1 (en) 2001-01-25
HK1048398B (zh) 2008-02-15
GB2352102A (en) 2001-01-17
DE60009080D1 (de) 2004-04-22
GB2352102B (en) 2004-06-16
ATE262237T1 (de) 2004-04-15
CN100345376C (zh) 2007-10-24

Similar Documents

Publication Publication Date Title
TW200518350A (en) Integrated circuit device, semiconductor device and fabrication method thereof
CA2376410A1 (en) Cascode distributed amplifier
TW200503179A (en) Integration method of a semiconductor device having a recessed gate electrode
DE60223419D1 (de) Verspannte cmos finfet bauelementestrukturen
ATE525800T1 (de) Hochleistungs-doherty-verstärker
DE50015742D1 (de) Trench-mos-transistor
AU2002352860A1 (en) Active termination circuit and method for controlling the impedance of external integrated circuit terminals
DE60009080D1 (de) Integrierte gyratorschaltung
WO2007133870A3 (en) Selective uniaxial stress relaxation by layout optimization in strained silicon on insulator integrated circuit
CY1111013T1 (el) Μεθοδος για τον περιορισμο καρπων
GB2409768A (en) Floating gate transistors
TW200633217A (en) Semiconductor device and manufacturing method therefor
NO20040604L (no) Trisykliske imidazolpyridiner
WO2003015182A3 (de) Steg-feldeffekttransistor und verfahren zum herstellen eines steg-feldeffekttransistors
TW200727416A (en) Method of forming a semiconductor device and structure therefor
MY123411A (en) Phase-compensated impedance converter
FR2802339B1 (fr) Transistor mos durcis
TW200733382A (en) Semiconductor device
WO2008105257A1 (ja) 高周波回路
AU2001227942A1 (en) Monolithic temperature compensation scheme for field effect transistor integrated circuits
SE9704513D0 (sv) Electronic circuit and manufacturing method for electronic circuit
EP1014585A3 (en) Level-shifting circuit and input and output circuits using the same
ATE456155T1 (de) Feldeffekttransistor-halbleiterbauelement
WO2002065551A8 (fr) Dispositif d'ajustement des circuits avant mise en boitier
WO2001086722A3 (de) Halbleiterbauelement