TW200629595A - Forming method for P type semiconductor domain and semiconductor device - Google Patents

Forming method for P type semiconductor domain and semiconductor device

Info

Publication number
TW200629595A
TW200629595A TW094126862A TW94126862A TW200629595A TW 200629595 A TW200629595 A TW 200629595A TW 094126862 A TW094126862 A TW 094126862A TW 94126862 A TW94126862 A TW 94126862A TW 200629595 A TW200629595 A TW 200629595A
Authority
TW
Taiwan
Prior art keywords
film
type
substrate
type dopant
forming
Prior art date
Application number
TW094126862A
Other languages
English (en)
Inventor
Keiichiro Tanabe
Susumu Yoshimoto
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200629595A publication Critical patent/TW200629595A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
TW094126862A 2004-08-06 2005-08-08 Forming method for P type semiconductor domain and semiconductor device TW200629595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004231543 2004-08-06

Publications (1)

Publication Number Publication Date
TW200629595A true TW200629595A (en) 2006-08-16

Family

ID=35787130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126862A TW200629595A (en) 2004-08-06 2005-08-08 Forming method for P type semiconductor domain and semiconductor device

Country Status (7)

Country Link
US (1) US7501666B2 (zh)
EP (1) EP1783824A4 (zh)
JP (1) JP4992424B2 (zh)
KR (1) KR20070043028A (zh)
CN (1) CN1993807B (zh)
TW (1) TW200629595A (zh)
WO (1) WO2006013846A1 (zh)

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US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
JP2006148086A (ja) * 2004-10-20 2006-06-08 Semiconductor Energy Lab Co Ltd レーザ照射方法、レーザ照射装置、および半導体装置の作製方法
KR100813069B1 (ko) 2006-09-06 2008-03-14 엘지전자 주식회사 질화물계 발광 소자 및 그 제조방법
JP2008244121A (ja) * 2007-03-27 2008-10-09 Rohm Co Ltd 窒化物半導体素子の製造方法
DE102007057728B4 (de) 2007-11-30 2014-04-30 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur
US20100090347A1 (en) * 2008-10-09 2010-04-15 Saylor Stephen D Apparatus and method for contact formation in semiconductor devices
CN101661878B (zh) * 2009-09-08 2011-07-06 中山大学 一种双元素delta掺杂生长P型GaN基材料的方法
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8592309B2 (en) * 2009-11-06 2013-11-26 Ultratech, Inc. Laser spike annealing for GaN LEDs
DE102009059193B4 (de) * 2009-12-17 2024-02-15 Innolas Solutions Gmbh Verfahren zur Dotierung von Halbleitermaterialien
KR101034059B1 (ko) * 2010-01-15 2011-05-12 엘지이노텍 주식회사 발광 소자 활성화 장치 및 이를 이용한 발광 소자 활성화 방법
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
KR20130011933A (ko) * 2011-07-20 2013-01-30 울트라테크 인크. ＧａＮ ＬＥＤ 및 이것의 고속 어닐링 방법
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP2014049456A (ja) * 2012-08-29 2014-03-17 Toyota Motor Corp 加熱装置及び加熱方法
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
KR20150019723A (ko) 2013-08-14 2015-02-25 삼성전자주식회사 고전자이동도 트랜지스터와 그 제조방법 및 고전자이동도 트랜지스터를 포함하는 전자소자
JP6645488B2 (ja) 2017-11-09 2020-02-14 信越半導体株式会社 半導体型蛍光体
JP7515501B2 (ja) 2019-11-05 2024-07-12 住友電工デバイス・イノベーション株式会社 エピタキシャル基板の製造方法、及びエピタキシャル基板
CN115425091B (zh) * 2022-10-09 2023-10-10 弘大芯源(深圳)半导体有限公司 一种半导体器件薄膜结构及制备方法

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Also Published As

Publication number Publication date
US7501666B2 (en) 2009-03-10
JPWO2006013846A1 (ja) 2008-05-01
WO2006013846A1 (ja) 2006-02-09
CN1993807A (zh) 2007-07-04
KR20070043028A (ko) 2007-04-24
EP1783824A1 (en) 2007-05-09
EP1783824A4 (en) 2009-04-01
US20070296060A1 (en) 2007-12-27
JP4992424B2 (ja) 2012-08-08
CN1993807B (zh) 2010-05-05

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