TW200947726A - Buried insulator isolation for solar cell contacts - Google Patents

Buried insulator isolation for solar cell contacts Download PDF

Info

Publication number: TW200947726A
Authority: TW; Taiwan
Prior art keywords: solar cell; emitter; insulating layer; substrate; forming
Prior art date: 2008-01-24

Application number

TW098102915A

Other languages

English (en)

Chinese (zh)

Inventor

Peter G Borden

Li Xu

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-01-24

Filing date

2009-01-23

Publication date

2009-11-16

2009-01-23 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2009-11-16 Publication of TW200947726A publication Critical patent/TW200947726A/zh

Links

239000012212 insulator Substances 0.000 title claims abstract description 7
238000002955 isolation Methods 0.000 title abstract description 5
239000000758 substrate Substances 0.000 claims abstract description 29
238000000034 method Methods 0.000 claims abstract description 20
229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
229920005591 polysilicon Polymers 0.000 claims abstract description 10
238000002161 passivation Methods 0.000 claims abstract description 9
239000004065 semiconductor Substances 0.000 claims description 5
230000005641 tunneling Effects 0.000 claims description 5
238000004519 manufacturing process Methods 0.000 claims description 4
229910052739 hydrogen Inorganic materials 0.000 claims description 3
239000001257 hydrogen Substances 0.000 claims description 3
238000000059 patterning Methods 0.000 claims description 3
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
238000000137 annealing Methods 0.000 claims description 2
238000000151 deposition Methods 0.000 claims description 2
230000003647 oxidation Effects 0.000 claims description 2
238000007254 oxidation reaction Methods 0.000 claims description 2
229910000420 cerium oxide Inorganic materials 0.000 claims 2
BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 2
238000009413 insulation Methods 0.000 claims 1
238000009792 diffusion process Methods 0.000 abstract description 8
238000007650 screen-printing Methods 0.000 abstract description 4
230000004044 response Effects 0.000 abstract description 2
239000010410 layer Substances 0.000 description 32
210000004027 cell Anatomy 0.000 description 24
229910052751 metal Inorganic materials 0.000 description 9
239000002184 metal Substances 0.000 description 9
230000006798 recombination Effects 0.000 description 8
238000005215 recombination Methods 0.000 description 8
230000008569 process Effects 0.000 description 7
239000000463 material Substances 0.000 description 4
239000006117 anti-reflective coating Substances 0.000 description 3
230000003667 anti-reflective effect Effects 0.000 description 3
230000005540 biological transmission Effects 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
230000005611 electricity Effects 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
229910052732 germanium Inorganic materials 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
230000004298 light response Effects 0.000 description 2
239000011148 porous material Substances 0.000 description 2
229910052715 tantalum Inorganic materials 0.000 description 2
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000012141 concentrate Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000000839 emulsion Substances 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000003292 glue Substances 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000011065 in-situ storage Methods 0.000 description 1
230000002401 inhibitory effect Effects 0.000 description 1
210000004692 intercellular junction Anatomy 0.000 description 1
230000005527 interface trap Effects 0.000 description 1
238000001459 lithography Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
238000007747 plating Methods 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
238000005245 sintering Methods 0.000 description 1
239000004575 stone Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Photovoltaic Devices (AREA)

TW098102915A 2008-01-24 2009-01-23 Buried insulator isolation for solar cell contacts TW200947726A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US2335408P	2008-01-24	2008-01-24

Publications (1)

Publication Number	Publication Date
TW200947726A true TW200947726A (en)	2009-11-16

Family

ID=40901644

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW098102915A TW200947726A (en)	2008-01-24	2009-01-23	Buried insulator isolation for solar cell contacts

Country Status (2)

Country	Link
TW (1)	TW200947726A (fr)
WO (1)	WO2009094575A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN107134498A (zh) *	2009-12-01	2017-09-05	太阳能公司	使用激光烧蚀的太阳能电池的接触形成

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8053867B2 (en)	2008-08-20	2011-11-08	Honeywell International Inc.	Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en)	2008-09-30	2011-05-31	Honeywell International Inc.	Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en)	2008-12-29	2013-08-27	Honeywell International Inc.	Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en)	2009-07-23	2012-12-04	Honeywell International Inc.	Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8586403B2 (en)	2011-02-15	2013-11-19	Sunpower Corporation	Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8629294B2 (en)	2011-08-25	2014-01-14	Honeywell International Inc.	Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en)	2011-10-24	2015-03-10	Honeywell International Inc.	Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
CN109599450A (zh) *	2013-04-03	2019-04-09	Lg电子株式会社	太阳能电池
CN113748522B (zh)	2019-03-29	2025-01-17	迈可晟太阳能有限公司	具有包括区分开的p型和n型区与偏置触点的混合结构的太阳能电池
CN110931603A (zh) *	2019-12-11	2020-03-27	晶澳（扬州）太阳能科技有限公司	太阳能电池及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2002222938A (ja) *	2001-01-25	2002-08-09	Rohm Co Ltd	半導体装置
TWI305927B (en) *	2001-03-29	2009-02-01	Toshiba Kk	Semiconductor device and method of making the same
KR100600850B1 (ko) *	2002-08-20	2006-07-14	삼성에스디아이 주식회사	효율이 향상된 박막 실리콘 태양전지 및 그의 제조방법
JP2006237155A (ja) *	2005-02-23	2006-09-07	Matsushita Electric Ind Co Ltd	バイポーラトランジスタ

2009
- 2009-01-23 TW TW098102915A patent/TW200947726A/zh unknown
- 2009-01-23 WO PCT/US2009/031882 patent/WO2009094575A2/fr not_active Ceased

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN107134498A (zh) *	2009-12-01	2017-09-05	太阳能公司	使用激光烧蚀的太阳能电池的接触形成
US12191404B2 (en)	2009-12-01	2025-01-07	Maxeon Solar Pte. Ltd.	Solar cell having conductive contacts in alignment with recast signatures

Also Published As

Publication number	Publication date
WO2009094575A2 (fr)	2009-07-30
WO2009094575A3 (fr)	2009-09-24

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