TW201224196A - Method and device for the plasma treatment of flat substrates - Google Patents
Method and device for the plasma treatment of flat substrates Download PDFInfo
- Publication number
- TW201224196A TW201224196A TW100124911A TW100124911A TW201224196A TW 201224196 A TW201224196 A TW 201224196A TW 100124911 A TW100124911 A TW 100124911A TW 100124911 A TW100124911 A TW 100124911A TW 201224196 A TW201224196 A TW 201224196A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- temperature
- electrode
- front side
- plasma
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 193
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000009832 plasma treatment Methods 0.000 title claims abstract description 21
- 239000007789 gas Substances 0.000 claims description 24
- 230000000284 resting effect Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 9
- 238000005496 tempering Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 230000000881 depressing effect Effects 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 238000010792 warming Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 abstract 4
- 238000007747 plating Methods 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002199 base oil Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201010027168 DE102010027168A1 (de) | 2010-07-14 | 2010-07-14 | Verfahren und Vorrichtung zur Plasmabehandlung flacher Substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201224196A true TW201224196A (en) | 2012-06-16 |
Family
ID=44503695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100124911A TW201224196A (en) | 2010-07-14 | 2011-07-14 | Method and device for the plasma treatment of flat substrates |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102010027168A1 (fr) |
| TW (1) | TW201224196A (fr) |
| WO (1) | WO2012007165A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116321563A (zh) * | 2023-05-15 | 2023-06-23 | 山西丹源新材料科技股份有限公司 | 一种具有恒压供水功能的炉头电极冷却器 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018121854A1 (de) * | 2018-09-07 | 2020-03-12 | Aixtron Se | Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09320799A (ja) * | 1996-05-27 | 1997-12-12 | Hitachi Ltd | プラズマ処理装置およびプラズマ処理方法 |
| JP3310171B2 (ja) * | 1996-07-17 | 2002-07-29 | 松下電器産業株式会社 | プラズマ処理装置 |
| MY120869A (en) * | 2000-01-26 | 2005-11-30 | Matsushita Electric Industrial Co Ltd | Plasma treatment apparatus and method |
| US20020083897A1 (en) * | 2000-12-29 | 2002-07-04 | Applied Materials, Inc. | Full glass substrate deposition in plasma enhanced chemical vapor deposition |
| JP3886046B2 (ja) * | 2002-12-18 | 2007-02-28 | シャープ株式会社 | プラズマｃｖｄ装置と、それを用いた成膜方法および半導体装置の製造方法 |
| JP4326300B2 (ja) | 2003-10-15 | 2009-09-02 | 三菱重工業株式会社 | プラズマｃｖｄ装置とプラズマｃｖｄ装置用電極 |
| KR101019293B1 (ko) * | 2005-11-04 | 2011-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마-강화 원자층 증착 장치 및 방법 |
| JP4805741B2 (ja) * | 2006-07-14 | 2011-11-02 | Ｏｋｉセミコンダクタ株式会社 | 半導体製造装置および半導体装置の製造方法 |
| DE102007022431A1 (de) * | 2007-05-09 | 2008-11-13 | Leybold Optics Gmbh | Behandlungssystem für flache Substrate |
-
2010
- 2010-07-14 DE DE201010027168 patent/DE102010027168A1/de not_active Withdrawn
-
2011
- 2011-07-14 TW TW100124911A patent/TW201224196A/zh unknown
- 2011-07-14 WO PCT/EP2011/003516 patent/WO2012007165A1/fr not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116321563A (zh) * | 2023-05-15 | 2023-06-23 | 山西丹源新材料科技股份有限公司 | 一种具有恒压供水功能的炉头电极冷却器 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012007165A1 (fr) | 2012-01-19 |
| DE102010027168A1 (de) | 2012-01-19 |
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