WO2012007165A1 - Procédé et dispositif pour le traitement au plasma de substrats plats - Google Patents

Procédé et dispositif pour le traitement au plasma de substrats plats Download PDF

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Publication number
WO2012007165A1
WO2012007165A1 PCT/EP2011/003516 EP2011003516W WO2012007165A1 WO 2012007165 A1 WO2012007165 A1 WO 2012007165A1 EP 2011003516 W EP2011003516 W EP 2011003516W WO 2012007165 A1 WO2012007165 A1 WO 2012007165A1
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WO
WIPO (PCT)
Prior art keywords
substrate
temperature
electrode
support surface
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/003516
Other languages
German (de)
English (en)
Inventor
Michael Geisler
Günter GRABOSCH
Arndt Zeuner
Thomas Merz
Rudolf Beckmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Buehler Alzenau GmbH
Original Assignee
Leybold Optics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Optics GmbH filed Critical Leybold Optics GmbH
Publication of WO2012007165A1 publication Critical patent/WO2012007165A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Definitions

  • the invention relates to a device and a method for plasma treatment of a flat substrate, each according to the preamble of the independent claims.
  • An apparatus for plasma treatment of flat substrates is known for example from EP 2 147 452, wherein a plasma is generated between an electrode and a counter electrode, between which the substrate to be treated is introduced. Via a gas distributor integrated in the electrode, reaction gas between electrode and
  • reaction gas can uniformly act on the area of the substrate surface to be treated.
  • the distance between the surface of the substrate and the electrode during the plasma treatment keep constant with only small tolerances, for example, to a value of 10 mm +/- 1 mm. For example, at a
  • the substrate must during the
  • the object of the present invention is to achieve an improved quality of a plasma-treated substrate surface.
  • the flat substrates are preferably made of a glass, metal, plastic or ceramic material. It is understood that pretreated in some way
  • Electrodes are covered by the invention.
  • the electrode and counterelectrode form plates of a parallel plate reactor.
  • the electrode AC voltage having at least one frequency component in a range between 1 MHz (megahertz) and 200 MHz to which the electrode and counter electrode are applied.
  • the counter electrode is hereinafter referred to the electrode, which in the
  • the mean temperature is understood to mean an arithmetically averaged temperature over the respective area over a time interval of at least 60 seconds.
  • the inventive setting an increased temperature of the back surface of the substrate opposite to the front surface of the substrate, a curvature of the substrate during the plasma treatment can be controlled, since the on the
  • Substrate front side or rear side acting overall performance can be kept the same or approximately the same.
  • the power applied to the front surface is determined by the thermal radiation power of the electrode and the plasma power during the plasma treatment, while the power applied to the back surface is determined solely by the thermal coupling of the substrate with the plasma
  • Temperature control is determined in the region of the counter electrode.
  • the power consumption on the back surface depends mainly on the thermal
  • the mechanical bias in the substrate can be achieved by setting different temperatures on the front and back surfaces of the substrate, respectively, since then the front surface expands laterally less than the back surface of the substrate, which increases at a front side surface
  • Substrate seen from the direction of the electrode leads, if not counteracted by appropriate measures.
  • the edge sides of the substrate then have a larger distance to the support surface than lying closer to the center of the substrate areas. If a force is applied to the edge sides of the substrate, the edge sides are approximated to the bearing surface.
  • the application of the edge sides serves to generate a force holding the substrate with its rear side surface against the support surface, which leads to a substantially flat contact of the substrate on the support surface and the thermally generated mechanical
  • Pretension in the substrate increases the pressure force against the support surface.
  • the substrate is fixed in the regions of the edge sides, with which the substrate is held on the support surface, advantageously using hold-downs associated with the edge sides of the substrate with which the substrate edges are pressed down. This ensures on the one hand that the disc is not bent; On the other hand, it is ensured that there is good thermal and mechanical contact between substrate and support surface.
  • a temperature difference T RS - T V s greater than 0.5 K is set by means of the temperature control, wherein TRS is an average temperature of the back surface of the substrate and T V s an average temperature of
  • Designated front side surface of the substrate As the average temperature, here is one over at least 80% of the back surface or front surface of the substrate
  • Temperature differences T RS - T V s of 1, 0 K, 1, 5 K, 2.0 K, 2.5 K, 3, OK or more can be set and that the selected temperature difference T RS - T V s of
  • Substrate material, the substrate thickness, the lateral extent of the substrate, its breaking strength and other parameters is dependent, which can be readily determined by the person skilled in the art.
  • the temperature difference is chosen so that the thermally generated mechanical bias flatly presses the substrate against the support surface without the substrate undergoing breakage during the plasma treatment.
  • a temperature difference T ⁇ - T vs with 3, OK> T ⁇ - T vs > 0.5K is preferred.
  • the thermal stress of the substrate can be kept low and, for example, both microcrystalline and amorphous silicon can be deposited in a PECVD process.
  • the plasma treatment is carried out at a temperature T G between 20 ° C and 300 ° C and / or a temperature T E between 20 ° C and 300 A C (preferably 100 ° C)
  • an advantageous temperature of the front or back surface of the substrate in particular a temperature difference T rs - T vs be set with 3, OK> T rs - T vs > 0.5K.
  • TG denotes a mean temperature of the counter electrode and T E an average temperature of the electrode.
  • Rear side surface of the substrate can be brought to a corresponding temperature.
  • Another embodiment of the invention is characterized in that in the Area between the back surface of the substrate and support surface hydrogen and / or helium gas with a process partial pressure between 0.1 mbar and 250 mbar, preferably 20 mbar is initiated, whereby a high thermal coupling between the substrate and support surface can be achieved.
  • Plasma treatment at electrode and counter electrode an RF power in a range between 0.1 kW / m2 and 20 kW / m2 is applied, whereby a plasma treatment for the production of amorphous or microcrystalline, N- or P- or intrinsic silicon thin films is possible.
  • the substrate can be arranged between an electrode of a planar charging surface, which is assigned to a counterelectrode and faces with its front side of the electrode and with its rear side of the support surface, are provided
  • a device for the thermal generation of a mechanical bias in the substrate which corresponds to a seen from the direction of the electrode concave curvature of the substrate with spaced from the support surface edge sides of the substrate by means of temperature control of the front and / or back of the substrate
  • the holding means may be formed finger-like or frame-like.
  • the holding means may be mechanically connected to the counter electrode, but at the same time electrically and / or thermally insulated from this.
  • the holding means may be formed finger-like or frame-like.
  • the holding means may be mechanically connected to the counter electrode, but at the same time electrically and / or thermally insulated from this.
  • Holding means may be formed as hold-down and allow the application of the edge sides with local forces to achieve a flat concern of the back surface of the substrate on the support surface and perform.
  • an embodiment of the at least one hold-down device which permits a lateral expansion of the substrate after applying the edge sides by means of local forces by means of the at least one hold-down, is possible.
  • the hold-down may have a, preferably elastic suspension or be designed with play against the side edges in a low temperature range (for example, 20 ° C) of the substrate.
  • an embodiment of the means for holding the substrate is provided which, during the plasma treatment, provides an orientation of the substrate at an angle to the vertical in a range between 3 ° and 30 ° with the front surface downwards. This will be a high
  • Gravity be oriented away from the substrate surface.
  • Curvature of the substrate with spaced from the support surface edge sides of the substrate corresponds by means of temperature control of the front and / or back of the substrate
  • At least 80% of the rear side surface of the substrate can be brought to an increased average temperature with respect to the front side surface of the substrate during the plasma treatment.
  • temperature control means are to be considered various parameters of the plasma treatment, in particular the surface of electrode and counter electrode, the electrode applied to the electrode and counter electrode RF power, the total power consumption of the substrate and its front surface, familiar to those skilled in the art Methods, for example, experimentally, by simulation and / or theoretical calculations can be considered.
  • the inventive design of the temperature control allows to control a curvature of the substrate during the plasma treatment, as already described above.
  • Temperature control of the temperature control is designed for the thermal generation of a mechanical bias in the substrate, which corresponds to a seen from the direction of the electrode concave curvature of the substrate.
  • a further embodiment of the invention is characterized in that means are provided for acting on edge sides of the substrate with a force for generating a force holding the substrate with its rear side surface against the support surface, wherein a precise positioning of the substrate and thus also with large-area substrates largely the same distance between
  • Substrate front surface and the electrode surface can be achieved, since the substrate rests flat on the support surface.
  • tempering means additionally arranged in the region of the electrode, a more precise adjustment of the total power consumption of the substrate during the
  • Plasma treatment can be achieved.
  • a further embodiment of the invention is characterized in that the bearing surface can be tempered by means of the temperature control means arranged in the region of the counterelectrode, with which thermal power can be coupled into the substrate via the backside surface of the substrate in a particularly simple manner. Additionally or alternatively, by means of arranged in the region of the electrode
  • Tempering be tempered in the region between the electrode and the counter electrode gas distributor, whereby the thermal power consumption of the substrate to be influenced on the substrate front side and a high stability of the gas distributor against thermally induced deformations can be achieved.
  • the temperature control means are provided with channels through which a Tempering liquid, preferably an oil fluid can flow.
  • a Tempering liquid preferably an oil fluid can flow.
  • the temperature control for example, associated with the electrode and / or counter electrode are
  • Circulators are kept at a constant temperature.
  • Temperier in the temperature control is designed to set a
  • T rs denotes a mean temperature of the back surface of the substrate and T vs an average temperature of the front surface of the substrate.
  • Temperier the temperature control is designed for plasma treatment at a temperature T ⁇ between 20 ° C and 300 ° C and / or a Termperatur T vs between 20 ° C and 300 ° C and / or at a temperature TG between 20 ° C and 300 ° C. and / or a temperature T E between 20 ° C and 100 ° C, where TG denotes a mean temperature of the counter electrode and T E denotes an average temperature of the electrode.
  • Counter electrode can be applied RF power in a range between 0.1 kW / m2 and 20 kW / m2.
  • Support surface in a range of at least 80% of a roughness R a and / or has a ripple, with which, in particular in the area between the back surface of the substrate and the support surface introduced hydrogen and / or helium gas, preferably at a process partial pressure between 0.1 mbar and 250 mbar effective thermal coupling between substrate and support surface can be achieved.
  • Fig. 1 shows a longitudinal section through an inventively to be cleaned device for plasma treatment of a substrate
  • Fig. 2 shows a section through a flat substrate at different temperatures of the front and back.
  • FIG. 1 shows a schematic representation of a device 1 designed as a reactor for treating flat substrates 2.
  • the reactor may in particular be designed as a PECVD reactor.
  • the reactor 1 comprises a process chamber 3 with an electrode 4 and a counter electrode 5 for generating a plasma, by means of which a surface of a substrate 2 can be treated, in particular coated.
  • the electrodes 4, 5 are designed as large-area metal plates and can for generating an electric field to a (not shown in Figure 1) voltage source, preferably a high-frequency supply source with an excitation frequency between 1 mHz and 200 MHz, preferably 13.56 MHz, connected become.
  • an RF power in a range between 0.1 kW / m2 and 20 kW / m2 can be applied to the electrodes 4, 5.
  • the substrate 2 is preferably as in EP 2 147 452 A1
  • the reactor 1 is designed for treating large flat substrates
  • the reactor 1 is suitable for carrying out processing steps in the production of
  • high-efficiency thin-film solar modules for example, for amorphous or
  • microcrystalline silicon thin-film solar cells are microcrystalline silicon thin-film solar cells.
  • the two electrodes 4, 5 form two opposite walls of the process chamber 3.
  • the process chamber 3 is arranged in a vacuum chamber 7 with an evacuable housing 8 having an opening 10 for on and
  • the chamber opening 10 is through a
  • Closing device 9 closed vacuum-tight.
  • seals 11 are provided.
  • the vacuum chamber 7 may have any spatial form and may in particular have a round or rectangular cross-section.
  • the embedded in the vacuum chamber 7 process chamber 3 may in particular the shape of a flat cylindrical disk or a flat cuboid. It is understood that the invention also different
  • Embodiments in which the process chamber itself is a vacuum chamber are encompassed by the invention.
  • the electrode 4 is arranged in a holding structure 37 in the vacuum chamber 7, which is formed in the embodiment of FIG. 1 of the housing rear wall 19.
  • the electrode 4 is accommodated in a recess 38 of the housing rear wall 19 and separated from it by a dielectric 20.
  • the counterelectrode 5 covers the recess 38 of the holding structure 37 during the execution of the treatment in such a way that a gap 25 is formed between the edge region 23 of the counterelectrode 5 and an edge region 24 of the recess 38.
  • the gap 25 has a width of the
  • the gap width is dimensioned in such a way that, on the one hand during the execution of the treatment, a plasma can be kept inside the process chamber 3, but on the other hand, no too large pressure gradient is built up between the process chamber 3 and the remaining interior of the vacuum chamber 7.
  • the reactive gas is supplied from a source via a supply channel 13 to a gas distributor 15, from which it flows into the process chamber 3.
  • the gas distributor 15 in the present embodiment comprises a gas space 16 which at the
  • Counter-electrode 5 side facing a gas outlet plate 17 which is provided with a plurality of outlet openings (not shown) for gas passage.
  • a gas outlet plate 17 which is provided with a plurality of outlet openings (not shown) for gas passage.
  • the substrate 2 is arranged on a particularly planar substrate support surface 5a during the plasma treatment.
  • the support surface 5a is integrated into the counter electrode 5, for example a metal surface on which the substrate rests during the plasma treatment.
  • the substrate support surface is covered by the substrate, so that it is not contaminated during the plasma treatment.
  • the cover can by the Substrate 2 carried out such that the formation of a residue on the substrate support surface 5a is prevented during the plasma treatment.
  • the counterelectrode 5 has no end regions 23 or only slightly beyond the region of the gas shower. To achieve the highest possible thermal coupling between a arranged on the support surface 5a substrate and the support surface 5a is for the
  • the reactor has tempering means arranged in the region of the counterelectrode, by means of which at least 80% of the rear side surface of the substrate can be brought to an increased average temperature with respect to the front side surface of the substrate during the plasma treatment.
  • temperature control means 27, 29, 30 are provided in the reactor 1.
  • the temperature control of the temperature control 27, 29, 30 designed for the thermal generation of a mechanical bias in the substrate, which corresponds to a seen from the direction of the electrode 4 concave curvature of the substrate 2.
  • Temperature control means are provided which comprise a device 29 which below the
  • Counter electrode 5 is arranged in the vacuum chamber 7 and allows a temperature of the support surface 5a.
  • a device 30 integrated into the counterelectrode 5 or contact surface 5a may also be provided.
  • the counterelectrode 5 and in particular the support surface 5a can be tempered by circulating a temperature control fluid through channels (not shown) in the counterelectrode 5 or the support surface 5a.
  • the gas outlet plate 17 can be tempered. This can be the
  • Gas exit plate 17 may be connected by means of webs 35 with the electrode 4, which consist of a material having high thermal conductivity, so that the electrode 4, which consist of a material having high thermal conductivity, so that the electrode 4, which consist of a material having high thermal conductivity, so that the electrode 4, which consist of a material having high thermal conductivity, so that the electrode 4, which consist of a material having high thermal conductivity, so that the electrode 4, which consist of a material having high thermal conductivity, so that the
  • Gas outlet plate 17 is thermally connected to the electrode 4.
  • the electrode 4 (and thus also the gas outlet plate 17) can be tempered by a Temperature control liquid circulates through channels 36 in the electrode 4.
  • the temperature of the electrode 4 can be controlled or regulated.
  • thermosensors 40 ' may be arranged in the region of the gas outlet plate 17 whose measured values for
  • Thermal sensors 40, 40 ' can be determined for different RF powers, gas flows, etc., a local temperature of the electrodes 4, 5 as a function of the power of the temperature control device 27, 29, 30. Based on such measurements, the instantaneous temperature control, if necessary, the geometric design of the
  • Temperature control devices 27, 29, 30 are optimized. Furthermore, measured values of the thermal sensors 40, 40 'can be obtained during the plasma treatment and used for a process-accompanying control of the power of the temperature control devices 27, 29, 30.
  • the tempering of the temperature control means 29, 30, optionally also the temperature control 27 is designed to set a temperature difference T rs - T vs > 0.5 K, where T rs a mean temperature of the back surface of the substrate 2 and T vs a mean temperature of the front surface of the Substrate 2 denotes.
  • the temperature control of the temperature control is designed for plasma treatment at a temperature T rs between 120 ° C and 300 ° C and / or a temperature T vs between 20 ° C and 100 ° C and / or at a temperature T G between 20 ° C and 300 ° C and / or a temperature T E between 20 ° C and 100 ° C, wherein T G denotes a mean temperature of the counter electrode and T E is an average temperature of the electrode. It is understood that when designing the temperature control parameters such as plasma power, distance from the electrode and
  • Counter electrode or distance gas outlet plate and front surface of the substrate thermal coupling between the temperature control and back surface of the substrate, reaction gases, process gases, specifications of the process temperature, etc. are to be considered in a professional manner.
  • the device further comprises means for imparting edge sides of the substrate 2 with a force for generating a force holding the substrate 2 with its rear side surface against the support surface 5a.
  • the counterelectrode 5 has on its side facing the electrode 4 a device 21 for holding the substrate 2.
  • the device 21, which is preferably designed as a fixing device, comprises one or more retaining means a plurality of hold-downs 31, which can press the substrate 2 on the edge surface on the support surface 5a acting surface of the counter electrode 5.
  • the holding means may be formed finger-like or frame-like. In particular, the
  • Holding means mechanically connected to the counter electrode 3, but at the same time be electrically and / or thermally insulated from this.
  • FIG. 2 shows, in schematic illustrations, a section through a flat substrate 50 with a front side 55, a back side 60 and edge sides 65, which are located on one side
  • Support surface 5a is located, the temperature difference between the front 55 and
  • Edge sides 65, the substrate 50 can be pressed against the support surface 5a in the subfigure.
  • the support surface is tempered, for example, to an average temperature TA in a range between 20 ° C and 300 ° C and thus brought to the support surface pressed back surface of the substrate to a corresponding temperature.
  • the process can produce layers with a lateral homogeneity of less than 1%.
  • T RS a temperature difference between 0.5 K and 1, 0 K set, where T RS is a mean temperature of
  • Rear side surface of the substrate and T V s denotes an average temperature of the front surface of the substrate.
  • the plasma treatment is carried out in particular at a Temperature T RS between 120 ° C and 300 ° C and / or a temperature T V s between 20 ° C and 100 ° C.
  • the plasma treatment is carried out in particular at a temperature T G between 20 ° C and 300 ° C and / or a temperature T E between 20 ° C and 100 ° C, where TG denotes a mean temperature of the counter electrode and T E is an average temperature of the electrode ,

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un procédé pour le traitement au plasma d'un substrat plat, le substrat étant disposé entre une électrode et une surface support plane à laquelle est associée une contre-électrode, et ainsi orienté avec sa face avant vers l'électrode et avec sa face arrière vers la surface support. Le procédé est caractérisé par - la fixation du substrat sur la surface support, - la génération thermique d'une précontrainte mécanique dans le substrat qui, vu dans le sens de l'électrode, correspond à une courbure concave du substrat, dont les bords sont éloignés de la surface support, par traitement thermique de la face avant et/ou de la face arrière du substrat, - la sollicitation des bords par des forces locales pour obtenir un placement à plat de la face arrière du substrat sur la surface support au moyen d'au moins un abaisseur, - l'excitation de la décharge du plasma au moyen d'une tension HF. L'invention concerne en outre un dispositif pour le traitement au plasma d'un substrat plat, le substrat pouvant être disposé entre une électrode et une surface support plane à laquelle est associée une contre-électrode, et qui est ainsi orienté avec sa face avant vers l'électrode et avec sa face arrière vers la surface support. Le dispositif est caractérisé par - des moyens pour la fixation du substrat sur la surface support, - un dispositif pour la génération thermique d'une précontrainte mécanique dans le substrat qui, vu dans le sens de l'électrode, correspond à une courbure concave du substrat, dont les bords sont éloignés de la surface support, par traitement thermique de la face avant et/ou de la face arrière du substrat, - des moyens pour la sollicitation des bords par des forces locales pour obtenir un placement à plat de la face arrière du substrat sur la surface support au moyen d'au moins un abaisseur, - des moyens pour l'excitation de la décharge du plasma au moyen d'une tension HF.
PCT/EP2011/003516 2010-07-14 2011-07-14 Procédé et dispositif pour le traitement au plasma de substrats plats Ceased WO2012007165A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201010027168 DE102010027168A1 (de) 2010-07-14 2010-07-14 Verfahren und Vorrichtung zur Plasmabehandlung flacher Substrate
DE102010027168.3 2010-07-14

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WO2012007165A1 true WO2012007165A1 (fr) 2012-01-19

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DE (1) DE102010027168A1 (fr)
TW (1) TW201224196A (fr)
WO (1) WO2012007165A1 (fr)

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CN116321563B (zh) * 2023-05-15 2023-08-01 山西丹源新材料科技股份有限公司 一种具有恒压供水功能的炉头电极冷却器

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Publication number Priority date Publication date Assignee Title
CN112969815A (zh) * 2018-09-07 2021-06-15 艾克斯特朗欧洲公司 用于调节cvd反应器的顶部温度的方法
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