TW358940B - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- TW358940B TW358940B TW086119318A TW86119318A TW358940B TW 358940 B TW358940 B TW 358940B TW 086119318 A TW086119318 A TW 086119318A TW 86119318 A TW86119318 A TW 86119318A TW 358940 B TW358940 B TW 358940B
- Authority
- TW
- Taiwan
- Prior art keywords
- input
- voltage
- circuit
- signal lines
- signal line
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34551796 | 1996-12-25 | ||
| JP06782997A JP3299910B2 (ja) | 1996-12-25 | 1997-03-21 | 半導体記憶装置およびその読み出し方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW358940B true TW358940B (en) | 1999-05-21 |
Family
ID=26409033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086119318A TW358940B (en) | 1996-12-25 | 1997-12-19 | Semiconductor storage device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5917767A (fr) |
| EP (1) | EP0851430B1 (fr) |
| JP (1) | JP3299910B2 (fr) |
| KR (1) | KR100264255B1 (fr) |
| DE (1) | DE69721210T2 (fr) |
| TW (1) | TW358940B (fr) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3481817B2 (ja) | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
| KR100323554B1 (ko) | 1997-05-14 | 2002-03-08 | 니시무로 타이죠 | 불휘발성반도체메모리장치 |
| JP4550855B2 (ja) * | 2000-03-08 | 2010-09-22 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US6515902B1 (en) * | 2001-06-04 | 2003-02-04 | Advanced Micro Devices, Inc. | Method and apparatus for boosting bitlines for low VCC read |
| JP2004310812A (ja) * | 2003-04-02 | 2004-11-04 | Renesas Technology Corp | 半導体メモリ |
| US6992939B2 (en) * | 2004-01-26 | 2006-01-31 | Micron Technology, Inc. | Method and apparatus for identifying short circuits in an integrated circuit device |
| US7580287B2 (en) | 2005-09-01 | 2009-08-25 | Micron Technology, Inc. | Program and read trim setting |
| KR20170099410A (ko) * | 2013-03-15 | 2017-08-31 | 실리콘 스토리지 테크놀로지 인크 | 고속 및 저전력 감지 증폭기 |
| US10381054B1 (en) | 2018-02-27 | 2019-08-13 | Globalfoundries Inc. | Common boosted assist |
| DE102020105669A1 (de) | 2019-12-31 | 2021-07-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrierte schaltung |
| CN113129944B (zh) * | 2019-12-31 | 2025-03-14 | 台湾积体电路制造股份有限公司 | 集成电路及其方法 |
| JPWO2023166376A1 (fr) * | 2022-03-04 | 2023-09-07 | ||
| US20250329352A1 (en) * | 2022-06-16 | 2025-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07235195A (ja) * | 1993-06-22 | 1995-09-05 | Youzan:Kk | メモリ回路 |
| JPH0757466A (ja) * | 1993-08-12 | 1995-03-03 | Toshiba Corp | 半導体集積回路 |
| JP3476952B2 (ja) * | 1994-03-15 | 2003-12-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| EP0724266B1 (fr) * | 1995-01-27 | 2001-12-12 | STMicroelectronics S.r.l. | Méthode de détection à approximations successives pour cellules de mémoire non-volatiles à niveaux multiples et circuit de détection l'utilisant |
| JPH0935474A (ja) * | 1995-07-19 | 1997-02-07 | Fujitsu Ltd | 半導体記憶装置 |
-
1997
- 1997-03-21 JP JP06782997A patent/JP3299910B2/ja not_active Expired - Lifetime
- 1997-12-18 US US08/993,797 patent/US5917767A/en not_active Expired - Lifetime
- 1997-12-19 DE DE69721210T patent/DE69721210T2/de not_active Expired - Lifetime
- 1997-12-19 EP EP97310351A patent/EP0851430B1/fr not_active Expired - Lifetime
- 1997-12-19 TW TW086119318A patent/TW358940B/zh not_active IP Right Cessation
- 1997-12-24 KR KR1019970072864A patent/KR100264255B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3299910B2 (ja) | 2002-07-08 |
| EP0851430B1 (fr) | 2003-04-23 |
| KR100264255B1 (ko) | 2000-08-16 |
| US5917767A (en) | 1999-06-29 |
| DE69721210D1 (de) | 2003-05-28 |
| EP0851430A3 (fr) | 1999-05-26 |
| KR19980064537A (ko) | 1998-10-07 |
| EP0851430A2 (fr) | 1998-07-01 |
| JPH10241386A (ja) | 1998-09-11 |
| DE69721210T2 (de) | 2004-02-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |