TW419724B - Projection exposure method and apparatus - Google Patents

Projection exposure method and apparatus Download PDF

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Publication number
TW419724B
TW419724B TW087100841A TW87100841A TW419724B TW 419724 B TW419724 B TW 419724B TW 087100841 A TW087100841 A TW 087100841A TW 87100841 A TW87100841 A TW 87100841A TW 419724 B TW419724 B TW 419724B
Authority
TW
Taiwan
Prior art keywords
stage
mask
pattern
exposure
grating
Prior art date
Application number
TW087100841A
Other languages
English (en)
Chinese (zh)
Inventor
Kenji Nishi
Original Assignee
Nippon Kogaku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Publication of TW419724B publication Critical patent/TW419724B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Library & Information Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW087100841A 1997-01-27 1998-01-22 Projection exposure method and apparatus TW419724B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9027206A JPH10209039A (ja) 1997-01-27 1997-01-27 投影露光方法及び投影露光装置

Publications (1)

Publication Number Publication Date
TW419724B true TW419724B (en) 2001-01-21

Family

ID=12214636

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087100841A TW419724B (en) 1997-01-27 1998-01-22 Projection exposure method and apparatus

Country Status (5)

Country Link
US (2) US6327022B1 (2)
EP (1) EP0855623A3 (2)
JP (1) JPH10209039A (2)
KR (1) KR100538421B1 (2)
TW (1) TW419724B (2)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU1682899A (en) * 1997-12-18 1999-07-05 Nikon Corporation Stage device and exposure apparatus
JP2000021714A (ja) 1998-06-30 2000-01-21 Canon Inc 露光方法および装置、ならびにデバイス製造方法
US6563567B1 (en) * 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
TW490594B (en) * 1999-06-09 2002-06-11 Asm Lithography Bv Lithographic projection method
EP1091252A3 (en) * 1999-09-29 2004-08-11 ASML Netherlands B.V. Lithographic method and apparatus
JP2001160530A (ja) * 1999-12-01 2001-06-12 Nikon Corp ステージ装置及び露光装置
EP1111471B1 (en) * 1999-12-21 2005-11-23 ASML Netherlands B.V. Lithographic projection apparatus with collision preventing device
JP2001230186A (ja) * 2000-02-17 2001-08-24 Hitachi Ltd 半導体集積回路装置の製造方法
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
JP2001332490A (ja) * 2000-03-14 2001-11-30 Nikon Corp 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法
US6703623B1 (en) * 2000-09-27 2004-03-09 Leepl Corporation Electron beam proximity exposure apparatus
US6894295B2 (en) * 2000-12-11 2005-05-17 Leepl Corporation Electron beam proximity exposure apparatus and mask unit therefor
JP2002289515A (ja) * 2000-12-28 2002-10-04 Nikon Corp 製品の製造方法、露光装置の製造方法、露光装置、及びデバイス製造方法
US6628372B2 (en) 2001-02-16 2003-09-30 Mccullough Andrew W. Use of multiple reticles in lithographic printing tools
US6902851B1 (en) 2001-03-14 2005-06-07 Advanced Micro Devices, Inc. Method for using phase-shifting mask
EP1255164B1 (en) * 2001-05-04 2007-07-18 ASML Netherlands B.V. Lithographic apparatus
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
KR100401553B1 (ko) * 2001-06-21 2003-10-17 한국과학기술연구원 미러 반사를 이용한 수평 구조형 노광장치
JP3827544B2 (ja) * 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
GB2379284A (en) * 2001-09-01 2003-03-05 Zarlink Semiconductor Ltd Multiple level photolithography
US20030087205A1 (en) * 2001-11-06 2003-05-08 Dennis Warner System and method for forming features on a semiconductor substrate
KR100436213B1 (ko) * 2001-12-17 2004-06-16 미래산업 주식회사 반도체 소자 테스트 핸들러용 소자 정렬장치
SG121751A1 (en) * 2001-12-21 2006-05-26 Asml Netherlands Bv Device manufacturing method, device manufactured thereby and lithographic apparatus therefor
EP1324137B1 (en) * 2001-12-21 2007-02-28 ASML Netherlands B.V. Device manufacturing method, device manufactured thereby and lithographic apparatus therefor
EP1353229A1 (en) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US6737205B2 (en) * 2002-04-30 2004-05-18 Motorola, Inc. Arrangement and method for transferring a pattern from a mask to a wafer
AU2003240931A1 (en) * 2002-05-29 2003-12-19 Massachusetts Institute Of Technology A method for photolithography using multiple illuminations and a single fine feature mask
KR100466311B1 (ko) * 2002-07-05 2005-01-13 삼성전자주식회사 반도체 공정의 노광 장치 및 이를 이용한 노광 방법
DE10257521B4 (de) * 2002-12-10 2017-03-30 Leica Microsystems Cms Gmbh Auflichtmikroskop
EP1439428A3 (en) * 2003-01-14 2009-05-13 ASML Netherlands B.V. Level sensor for lithographic apparatus
TWI237744B (en) * 2003-01-14 2005-08-11 Asml Netherlands Bv Level sensor for lithographic apparatus
JP4101076B2 (ja) * 2003-02-06 2008-06-11 キヤノン株式会社 位置検出方法及び装置
US7049156B2 (en) * 2003-03-19 2006-05-23 Verity Instruments, Inc. System and method for in-situ monitor and control of film thickness and trench depth
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
JP4315420B2 (ja) * 2003-04-18 2009-08-19 キヤノン株式会社 露光装置及び露光方法
KR101476087B1 (ko) 2003-06-19 2014-12-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
KR101613384B1 (ko) * 2003-08-21 2016-04-18 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US8064730B2 (en) * 2003-09-22 2011-11-22 Asml Netherlands B.V. Device manufacturing method, orientation determination method and lithographic apparatus
US20050073671A1 (en) * 2003-10-07 2005-04-07 Intel Corporation Composite optical lithography method for patterning lines of substantially equal width
US7142282B2 (en) 2003-10-17 2006-11-28 Intel Corporation Device including contacts
US7072024B2 (en) * 2004-01-20 2006-07-04 Nikon Corporation Lithographic projection method and apparatus
US7423722B2 (en) * 2004-01-29 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR20060007211A (ko) * 2004-07-19 2006-01-24 삼성전자주식회사 노광 시스템
US7283205B2 (en) * 2005-01-19 2007-10-16 Micron Technology, Inc. Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
WO2007077875A1 (ja) * 2005-12-28 2007-07-12 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP5569556B2 (ja) * 2006-01-27 2014-08-13 富士通セミコンダクター株式会社 半導体装置の製造方法
KR20080102192A (ko) * 2006-02-16 2008-11-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
WO2007094407A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
US7626682B2 (en) * 2006-04-13 2009-12-01 Infineon Technologies Ag Reticle stages for lithography systems and lithography methods
TW200746259A (en) 2006-04-27 2007-12-16 Nikon Corp Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus
KR101452524B1 (ko) * 2006-09-01 2014-10-21 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP4912205B2 (ja) * 2007-04-18 2012-04-11 キヤノン株式会社 露光装置及びデバイス製造方法
DE102008017645A1 (de) 2008-04-04 2009-10-08 Carl Zeiss Smt Ag Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats
EP2189849B1 (en) * 2008-11-21 2015-12-16 ASML Netherlands B.V. A lithographic apparatus provided with a swap bridge
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
NL2008157A (en) * 2011-02-22 2012-08-24 Asml Netherlands Bv Lithographic apparatus and lithographic projection method.
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
CN103246170B (zh) * 2012-02-09 2015-07-08 中芯国际集成电路制造(上海)有限公司 曝光装置及曝光方法
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US9030668B2 (en) * 2012-05-15 2015-05-12 Nikon Corporation Method for spatially multiplexing two or more fringe projection signals on a single detector
US20140154891A1 (en) * 2012-08-22 2014-06-05 Sionyx, Inc. Beam Delivery Systems for Laser Processing Materials and Associated Methods
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6399739B2 (ja) * 2013-09-27 2018-10-03 キヤノン株式会社 露光装置、露光方法、およびデバイスの製造方法
US10331038B2 (en) * 2015-03-24 2019-06-25 Applied Materials, Inc. Real time software and array control
CN104950595B (zh) * 2015-07-07 2017-05-24 合肥芯硕半导体有限公司 一种侧立安装式双工件台装置
CN106933064B (zh) * 2017-03-27 2018-11-09 上海华力微电子有限公司 实现更小线宽的光刻工艺
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
US11302546B2 (en) * 2018-07-30 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor process system and method
DE102018132001A1 (de) * 2018-12-12 2020-06-18 Laser Imaging Systems Gmbh Vorrichtung zum Belichten von plattenförmigen Werkstücken mit hohem Durchsatz

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105376A (en) 1977-02-25 1978-09-13 Hitachi Ltd Positioning unit
JPS57183031A (en) 1981-05-06 1982-11-11 Toshiba Corp Method for wafer exposure and device thereof
JPS6047418A (ja) 1983-08-25 1985-03-14 Hitachi Ltd 半導体露光装置
GB2155201B (en) 1984-02-24 1988-07-13 Canon Kk An x-ray exposure apparatus
US4780617A (en) * 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS61196532A (ja) 1985-02-26 1986-08-30 Canon Inc 露光装置
US4878086A (en) * 1985-04-01 1989-10-31 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
US4814830A (en) * 1985-04-01 1989-03-21 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
US4861162A (en) 1985-05-16 1989-08-29 Canon Kabushiki Kaisha Alignment of an object
US4708466A (en) * 1986-02-07 1987-11-24 Canon Kabushiki Kaisha Exposure apparatus
JPS62198863A (ja) * 1986-02-27 1987-09-02 Canon Inc 露光装置
JPS6387725A (ja) 1986-10-01 1988-04-19 Sumitomo Heavy Ind Ltd ステ−ジ移動機構
JPS63232318A (ja) * 1987-03-20 1988-09-28 Hitachi Ltd 微細パタ−ン形成方法
JPS63261850A (ja) 1987-04-20 1988-10-28 Fujitsu Ltd 縦型ｘ−ｙステ−ジ
JPH0722112B2 (ja) * 1987-07-30 1995-03-08 キヤノン株式会社 マスクホルダ並びにそれを用いたマスクの搬送方法
JP2940553B2 (ja) 1988-12-21 1999-08-25 株式会社ニコン 露光方法
US5151750A (en) 1989-04-14 1992-09-29 Nikon Corporation Alignment apparatus
US5151749A (en) * 1989-06-08 1992-09-29 Nikon Corporation Method of and apparatus for measuring coordinate position and positioning an object
JPH03183115A (ja) * 1989-12-12 1991-08-09 Seiko Epson Corp 半導体製造装置
US5249016A (en) 1989-12-15 1993-09-28 Canon Kabushiki Kaisha Semiconductor device manufacturing system
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
US5638211A (en) * 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
US5117255A (en) 1990-09-19 1992-05-26 Nikon Corporation Projection exposure apparatus
DE69132120T2 (de) * 1990-11-15 2000-09-21 Nikon Corp., Tokio/Tokyo Verfahren und Vorrichtung zur Projektionsbelichtung
NL9100215A (nl) 1991-02-07 1992-09-01 Asm Lithography Bv Inrichting voor het repeterend afbeelden van een maskerpatroon op een substraat.
JP3084760B2 (ja) * 1991-02-28 2000-09-04 株式会社ニコン 露光方法及び露光装置
US5506684A (en) 1991-04-04 1996-04-09 Nikon Corporation Projection scanning exposure apparatus with synchronous mask/wafer alignment system
JP2505952B2 (ja) 1992-04-17 1996-06-12 キヤノン株式会社 半導体製造装置
US6023068A (en) 1991-05-30 2000-02-08 Canon Kabushiki Kaisha Semiconductor device manufacturing apparatus
US5301013A (en) * 1991-07-30 1994-04-05 U.S. Philips Corporation Positioning device having two manipulators operating in parallel, and optical lithographic device provided with such a positioning device
JP3203719B2 (ja) 1991-12-26 2001-08-27 株式会社ニコン 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法
US5502311A (en) 1992-01-17 1996-03-26 Nikon Corporation Method of and apparatus for detecting plane position
DE69322983T2 (de) 1992-02-21 1999-07-15 Canon K.K., Tokio/Tokyo System zum Steuern von Trägerplatten
US5477304A (en) 1992-10-22 1995-12-19 Nikon Corporation Projection exposure apparatus
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
US5978071A (en) 1993-01-07 1999-11-02 Nikon Corporation Projection exposure apparatus and method in which mask stage is moved to provide alignment with a moving wafer stage
US6278957B1 (en) 1993-01-21 2001-08-21 Nikon Corporation Alignment method and apparatus therefor
US5591958A (en) 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
US5464715A (en) * 1993-04-02 1995-11-07 Nikon Corporation Method of driving mask stage and method of mask alignment
JP3301153B2 (ja) 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
US5815248A (en) 1993-04-22 1998-09-29 Nikon Corporation Illumination optical apparatus and method having a wavefront splitter and an optical integrator
US5534970A (en) 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
JP3412193B2 (ja) * 1993-06-29 2003-06-03 株式会社ニコン 露光装置
US5699145A (en) * 1993-07-14 1997-12-16 Nikon Corporation Scanning type exposure apparatus
JP3374467B2 (ja) * 1993-09-14 2003-02-04 株式会社ニコン 投影露光装置及び露光方法
KR970005682B1 (ko) * 1994-02-07 1997-04-18 현대전자산업 주식회사 반도체 소자의 미세패턴 형성방법
JPH07302748A (ja) 1994-05-02 1995-11-14 Canon Inc 半導体露光装置
JPH07335524A (ja) 1994-06-06 1995-12-22 Canon Inc 位置合わせ方法
US5715064A (en) * 1994-06-17 1998-02-03 International Business Machines Corporation Step and repeat apparatus having enhanced accuracy and increased throughput
JPH08167559A (ja) 1994-12-15 1996-06-25 Nikon Corp アライメント方法及び装置
JP3039305B2 (ja) 1995-01-11 2000-05-08 キヤノン株式会社 位置合わせ装置及びそれを用いた半導体デバイスの製造方法
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
US5599365A (en) 1995-03-03 1997-02-04 Ingersoll-Rand Company Mechanical fluid separator
JP4132095B2 (ja) 1995-03-14 2008-08-13 株式会社ニコン 走査型露光装置
JPH08264427A (ja) 1995-03-23 1996-10-11 Nikon Corp アライメント方法及びその装置
JPH08316134A (ja) 1995-05-24 1996-11-29 Nikon Corp 露光方法
KR100500199B1 (ko) 1995-05-29 2005-11-01 가부시키가이샤 니콘 마스크패턴을겹쳐서노광하는노광방법
US5995198A (en) 1995-06-01 1999-11-30 Nikon Corporation Exposure apparatus
US5907392A (en) * 1995-07-20 1999-05-25 Nikon Corporation Exposure apparatus
US5751404A (en) 1995-07-24 1998-05-12 Canon Kabushiki Kaisha Exposure apparatus and method wherein alignment is carried out by comparing marks which are incident on both reticle stage and wafer stage reference plates
JP3183115B2 (ja) 1995-09-06 2001-07-03 セイコーエプソン株式会社 インクジェットプリンタ
JP3237522B2 (ja) 1996-02-05 2001-12-10 ウシオ電機株式会社 ウエハ周辺露光方法および装置
JPH09320921A (ja) 1996-05-24 1997-12-12 Nikon Corp ベースライン量の測定方法及び投影露光装置
US5877845A (en) 1996-05-28 1999-03-02 Nippon Kogaku Kk Scanning exposure apparatus and method
WO1998006009A1 (en) 1996-08-02 1998-02-12 Mrs Technology, Inc. Lithography system with remote multisensor alignment
DE69728948T2 (de) 1996-11-14 2005-09-15 Nikon Corp. Projektionsbelichtungsvorrichtung und Verfahren
WO1998028665A1 (en) * 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern

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EP0855623A2 (en) 1998-07-29
US20020036762A1 (en) 2002-03-28
US6590636B2 (en) 2003-07-08
EP0855623A3 (en) 2000-05-31
US6327022B1 (en) 2001-12-04
KR19980070895A (ko) 1998-10-26
KR100538421B1 (ko) 2006-03-23

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