TW428285B - Antifuse element and method for manufacturing the same - Google Patents

Antifuse element and method for manufacturing the same

Info

Publication number
TW428285B
TW428285B TW086101962A TW86101962A TW428285B TW 428285 B TW428285 B TW 428285B TW 086101962 A TW086101962 A TW 086101962A TW 86101962 A TW86101962 A TW 86101962A TW 428285 B TW428285 B TW 428285B
Authority
TW
Taiwan
Prior art keywords
film
antifuse
control
film thickness
aperture
Prior art date
Application number
TW086101962A
Other languages
English (en)
Chinese (zh)
Inventor
Toru Yamaoka
Hiroshi Sakurai
Hirotsugu Honda
Hiroshi Yuasa
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of TW428285B publication Critical patent/TW428285B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
TW086101962A 1996-08-08 1997-02-19 Antifuse element and method for manufacturing the same TW428285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8209937A JPH1056066A (ja) 1996-08-08 1996-08-08 アンチヒューズ素子およびその製造方法

Publications (1)

Publication Number Publication Date
TW428285B true TW428285B (en) 2001-04-01

Family

ID=16581138

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086101962A TW428285B (en) 1996-08-08 1997-02-19 Antifuse element and method for manufacturing the same

Country Status (7)

Country Link
US (1) US5913138A (de)
EP (1) EP0823733A3 (de)
JP (1) JPH1056066A (de)
KR (1) KR100252574B1 (de)
CN (1) CN1173736A (de)
SG (1) SG54471A1 (de)
TW (1) TW428285B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856234A (en) * 1993-09-14 1999-01-05 Actel Corporation Method of fabricating an antifuse
US5485031A (en) 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
CA2196557A1 (en) 1995-06-02 1996-12-05 Frank W. Hawley Raised tungsten plug antifuse and fabrication process
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US6541363B2 (en) 1996-10-17 2003-04-01 Guobiao Zhang Antifuse manufacturing process
DE19931082B4 (de) * 1999-07-06 2005-02-24 Robert Bosch Gmbh Abgleichbares Halbleiterbauelement
US6774439B2 (en) * 2000-02-17 2004-08-10 Kabushiki Kaisha Toshiba Semiconductor device using fuse/anti-fuse system
JP3629187B2 (ja) * 2000-06-28 2005-03-16 株式会社東芝 電気フューズ、この電気フューズを備えた半導体装置及びその製造方法
GB0111384D0 (en) * 2001-05-10 2001-07-04 Esm Ltd Design and processing of antifuse structure
US7816188B2 (en) 2001-07-30 2010-10-19 Sandisk 3D Llc Process for fabricating a dielectric film using plasma oxidation
US20030183868A1 (en) * 2002-04-02 2003-10-02 Peter Fricke Memory structures
US6794726B2 (en) 2002-04-17 2004-09-21 International Business Machines Corporation MOS antifuse with low post-program resistance
US7196570B2 (en) * 2004-05-05 2007-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple-time programmable resistance circuit
US7782651B2 (en) 2006-10-24 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including storage device and method for driving the same
JP5214213B2 (ja) * 2006-10-24 2013-06-19 株式会社半導体エネルギー研究所 記憶装置の駆動方法
JP6150997B2 (ja) * 2012-10-03 2017-06-21 エスアイアイ・セミコンダクタ株式会社 半導体集積回路装置
CN104979282A (zh) * 2015-06-10 2015-10-14 中国电子科技集团公司第五十八研究所 一种降低mtm反熔丝介质漏电流的工艺方法
US11107764B2 (en) 2017-09-28 2021-08-31 Intel Corporation Group III-V semiconductor fuses and their methods of fabrication
US11621225B2 (en) * 2020-09-06 2023-04-04 Nanya Technology Corporation Electrical fuse matrix

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866937A (en) * 1990-04-12 1999-02-02 Actel Corporation Double half via antifuse
US5181096A (en) * 1990-04-12 1993-01-19 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer
US5196724A (en) * 1991-04-26 1993-03-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
WO1993004499A1 (en) * 1991-08-19 1993-03-04 Crosspoint Solutions, Inc. An improved antifuse and method of manufacture thereof
JPH05198681A (ja) * 1991-10-23 1993-08-06 Fujitsu Ltd アンチヒューズを備えた半導体装置
US5475253A (en) * 1992-08-21 1995-12-12 Xilinx, Inc. Antifuse structure with increased breakdown at edges
JPH08502857A (ja) * 1992-08-21 1996-03-26 ジリンクス，インコーポレーテッド アンチヒューズ構造およびその形成方法
EP0660408A1 (de) * 1993-12-16 1995-06-28 United Technologies Corporation Verfahren zur Herstellung von "Antifuse"-Bauelementen
US5440167A (en) * 1994-02-23 1995-08-08 Crosspoint Solutions, Inc. Antifuse with double via contact and method of manufacture therefor
US5514900A (en) * 1994-03-31 1996-05-07 Crosspoint Solutions, Inc. Mutlilayered antifuse with intermediate metal layer
US5682058A (en) * 1994-03-31 1997-10-28 Crosspoint Solutions, Inc. Multilayer antifuse with low leakage and method of manufacture therefor
JPH0831944A (ja) * 1994-07-15 1996-02-02 Hitachi Ltd 半導体集積回路装置およびその製造方法
CA2196557A1 (en) * 1995-06-02 1996-12-05 Frank W. Hawley Raised tungsten plug antifuse and fabrication process
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure

Also Published As

Publication number Publication date
US5913138A (en) 1999-06-15
SG54471A1 (en) 1998-11-16
CN1173736A (zh) 1998-02-18
KR100252574B1 (ko) 2000-04-15
KR19980018039A (ko) 1998-06-05
JPH1056066A (ja) 1998-02-24
EP0823733A2 (de) 1998-02-11
EP0823733A3 (de) 1998-07-15

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees