TW434809B - Method for forming an insulating layer in semiconductor device - Google Patents
Method for forming an insulating layer in semiconductor device Download PDFInfo
- Publication number
- TW434809B TW434809B TW087110367A TW87110367A TW434809B TW 434809 B TW434809 B TW 434809B TW 087110367 A TW087110367 A TW 087110367A TW 87110367 A TW87110367 A TW 87110367A TW 434809 B TW434809 B TW 434809B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- sog
- insulating layer
- patent application
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
- H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
Landscapes
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970074106A KR100248159B1 (ko) | 1997-12-26 | 1997-12-26 | 반도체장치에 있어서 이온주입을 통한 에스오지층형성방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW434809B true TW434809B (en) | 2001-05-16 |
Family
ID=19528667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087110367A TW434809B (en) | 1997-12-26 | 1998-06-26 | Method for forming an insulating layer in semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH11274152A (ja) |
| KR (1) | KR100248159B1 (ja) |
| TW (1) | TW434809B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4649262B2 (ja) | 2005-04-19 | 2011-03-09 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| KR100780617B1 (ko) * | 2006-06-29 | 2007-11-29 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| CN115662903B (zh) * | 2022-11-14 | 2023-05-26 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法以及半导体器件 |
-
1997
- 1997-12-26 KR KR1019970074106A patent/KR100248159B1/ko not_active Expired - Fee Related
-
1998
- 1998-06-26 TW TW087110367A patent/TW434809B/zh not_active IP Right Cessation
- 1998-12-24 JP JP10367025A patent/JPH11274152A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR100248159B1 (ko) | 2000-03-15 |
| JPH11274152A (ja) | 1999-10-08 |
| KR19990054301A (ko) | 1999-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |