TW508616B - Electron beam lithography method and electron-optical lithography system - Google Patents
Electron beam lithography method and electron-optical lithography system Download PDFInfo
- Publication number
- TW508616B TW508616B TW090113244A TW90113244A TW508616B TW 508616 B TW508616 B TW 508616B TW 090113244 A TW090113244 A TW 090113244A TW 90113244 A TW90113244 A TW 90113244A TW 508616 B TW508616 B TW 508616B
- Authority
- TW
- Taiwan
- Prior art keywords
- electron beam
- condenser
- lens
- projection
- electron
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000000206 photolithography Methods 0.000 title claims abstract description 13
- 238000000609 electron-beam lithography Methods 0.000 title claims abstract description 5
- 238000010894 electron beam technology Methods 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000005284 excitation Effects 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 5
- 238000007493 shaping process Methods 0.000 claims description 2
- 239000000571 coke Substances 0.000 claims 1
- 235000013372 meat Nutrition 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 14
- 238000003384 imaging method Methods 0.000 abstract description 14
- 238000001352 electron-beam projection lithography Methods 0.000 abstract description 7
- 238000001459 lithography Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10034412A DE10034412A1 (de) | 2000-07-14 | 2000-07-14 | Verfahren zur Elektronenstrahl-Lithographie und elektronen-optisches Lithographiesystem |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW508616B true TW508616B (en) | 2002-11-01 |
Family
ID=7649011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090113244A TW508616B (en) | 2000-07-14 | 2001-05-31 | Electron beam lithography method and electron-optical lithography system |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6657211B2 (de) |
| EP (1) | EP1172837B1 (de) |
| JP (1) | JP5117652B2 (de) |
| DE (2) | DE10034412A1 (de) |
| SG (1) | SG115389A1 (de) |
| TW (1) | TW508616B (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3831188B2 (ja) * | 2000-09-27 | 2006-10-11 | 株式会社東芝 | 露光処理装置及び露光処理方法 |
| JP2005294754A (ja) * | 2004-04-05 | 2005-10-20 | Toshiba Corp | 電子ビーム描画装置、電子ビーム描画方法、電子ビーム描画プログラム及び直接描画方式を用いた半導体装置の製造方法 |
| DE102004019835B4 (de) * | 2004-04-23 | 2007-08-02 | Vistec Electron Beam Gmbh | Beleuchtungskondensor für ein Partikeloptik-Projektionssystem |
| US7816655B1 (en) | 2004-05-21 | 2010-10-19 | Kla-Tencor Technologies Corporation | Reflective electron patterning device and method of using same |
| US6870172B1 (en) | 2004-05-21 | 2005-03-22 | Kla-Tencor Technologies Corporation | Maskless reflection electron beam projection lithography |
| GB2421630B (en) * | 2004-12-21 | 2006-11-29 | Leica Microsys Lithography Ltd | Dual-mode electron beam column |
| US7358512B1 (en) | 2006-03-28 | 2008-04-15 | Kla-Tencor Technologies Corporation | Dynamic pattern generator for controllably reflecting charged-particles |
| US7692167B1 (en) | 2006-10-26 | 2010-04-06 | Kla-Tencor Technologies Corporation | High-fidelity reflection electron beam lithography |
| US7566882B1 (en) | 2006-12-14 | 2009-07-28 | Kla-Tencor Technologies Corporation | Reflection lithography using rotating platter |
| DE102007046783A1 (de) * | 2007-09-29 | 2009-04-23 | Carl Zeiss Nts Gmbh | Vorrichtung zur Ablenkung oder Einlenkung eines Teilchenstrahls |
| US7755061B2 (en) * | 2007-11-07 | 2010-07-13 | Kla-Tencor Technologies Corporation | Dynamic pattern generator with cup-shaped structure |
| US9040942B1 (en) | 2008-01-11 | 2015-05-26 | Kla-Tencor Corporation | Electron beam lithography with linear column array and rotary stage |
| DE102009028013B9 (de) | 2009-07-24 | 2014-04-17 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät mit einer Blendeneinheit und Verfahren zur Einstellung eines Strahlstroms in einem Teilchenstrahlgerät |
| US8253119B1 (en) | 2009-07-27 | 2012-08-28 | Kla-Tencor Corporation | Well-based dynamic pattern generator |
| US8089051B2 (en) * | 2010-02-24 | 2012-01-03 | Kla-Tencor Corporation | Electron reflector with multiple reflective modes |
| US8373144B1 (en) | 2010-08-31 | 2013-02-12 | Kla-Tencor Corporation | Quasi-annular reflective electron patterning device |
| US9541382B2 (en) | 2011-12-19 | 2017-01-10 | Kabushiki Kaisha Topcon | Rotation angle detecting apparatus and surveying instrument |
| JP6055179B2 (ja) * | 2011-12-19 | 2016-12-27 | 株式会社トプコン | 回転角検出装置及び測量装置 |
| US9905391B2 (en) * | 2015-04-29 | 2018-02-27 | Kla-Tencor Corporation | System and method for imaging a sample with an electron beam with a filtered energy spread |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR39852E (fr) | 1972-06-30 | 1932-03-24 | Ig Farbenindustrie Ag | Procédé de production de colorants solides pour cuve |
| JPS4964097A (de) * | 1972-06-30 | 1974-06-21 | ||
| DE2702445C3 (de) | 1977-01-20 | 1980-10-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Korpuskularstrahloptisches Gerät zur verkleinernden Abbildung einer Maske auf ein zu bestrahlendes Präparat |
| JPS5543809A (en) * | 1978-09-21 | 1980-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Electron beam radiating device |
| JP2553032B2 (ja) * | 1985-03-19 | 1996-11-13 | 株式会社ニコン | 荷電粒子ビ−ム偏向回路 |
| US4937367A (en) * | 1987-07-15 | 1990-06-26 | Zambon Group S.P.A. | Process for the preparation of intermediates for the synthesis of fosfomycin |
| EP0367496B1 (de) * | 1988-10-31 | 1994-12-28 | Fujitsu Limited | Vorrichtung und Verfahren zur Lithographie mittels eines Strahls geladener Teilchen |
| JPH02122518A (ja) * | 1988-10-31 | 1990-05-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3237013B2 (ja) * | 1991-12-19 | 2001-12-10 | 株式会社ニコン | 電子線縮小転写装置 |
| US5466904A (en) * | 1993-12-23 | 1995-11-14 | International Business Machines Corporation | Electron beam lithography system |
| JPH07321004A (ja) * | 1994-05-24 | 1995-12-08 | Hitachi Ltd | 電子線描画方法及び装置 |
| GB2308916B (en) * | 1996-01-05 | 2000-11-22 | Leica Lithography Systems Ltd | Electron beam pattern-writing column |
| JPH10106470A (ja) * | 1996-09-30 | 1998-04-24 | Nikon Corp | 荷電粒子線転写装置 |
| JPH1140475A (ja) * | 1997-07-18 | 1999-02-12 | Nec Corp | 露光描画装置、露光描画方法及び露光描画処理プログラムを記録した記録媒体 |
| JP3283218B2 (ja) * | 1997-07-23 | 2002-05-20 | 株式会社日立製作所 | 電子線描画装置 |
| DE19855629A1 (de) * | 1998-12-02 | 2000-06-08 | Leo Elektronenmikroskopie Gmbh | Teilchenoptische Anordnung und Verfahren zur teilchenoptischen Erzeugung von Mikrostrukturen |
| JP2000003847A (ja) * | 1998-06-15 | 2000-01-07 | Canon Inc | 荷電粒子線縮小転写装置及びデバイス製造方法 |
| JP2000100715A (ja) * | 1998-09-17 | 2000-04-07 | Nikon Corp | 電子ビーム露光装置の調整方法 |
| US6262429B1 (en) * | 1999-01-06 | 2001-07-17 | Etec Systems, Inc. | Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field |
| DE19945344A1 (de) * | 1999-09-22 | 2001-03-29 | Leo Elektronenmikroskopie Gmbh | Teilchenoptisches Beleuchtungs- und Abbildungssystem mit einer Kondensor-Objektiv-Einfeldlinse |
-
2000
- 2000-07-14 DE DE10034412A patent/DE10034412A1/de not_active Withdrawn
-
2001
- 2001-05-31 TW TW090113244A patent/TW508616B/zh not_active IP Right Cessation
- 2001-07-03 EP EP01116082A patent/EP1172837B1/de not_active Expired - Lifetime
- 2001-07-03 DE DE50114514T patent/DE50114514D1/de not_active Expired - Fee Related
- 2001-07-10 JP JP2001208849A patent/JP5117652B2/ja not_active Expired - Fee Related
- 2001-07-13 SG SG200104278A patent/SG115389A1/en unknown
- 2001-07-16 US US09/906,188 patent/US6657211B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1172837B1 (de) | 2008-11-26 |
| US20020043629A1 (en) | 2002-04-18 |
| EP1172837A3 (de) | 2006-07-05 |
| SG115389A1 (en) | 2005-10-28 |
| JP2002093698A (ja) | 2002-03-29 |
| US6657211B2 (en) | 2003-12-02 |
| EP1172837A2 (de) | 2002-01-16 |
| DE10034412A1 (de) | 2002-01-24 |
| JP5117652B2 (ja) | 2013-01-16 |
| DE50114514D1 (de) | 2009-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |