TW518425B - Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore - Google Patents

Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore Download PDF

Info

Publication number: TW518425B
Authority: TW; Taiwan
Prior art keywords: lens; crystal; optical; item; patent application
Prior art date: 1999-06-25

Application number

TW90100475A

Other languages

English (en)

Chinese (zh)

Inventor

Gautam Meda

Michael Price

Michael Rivera

Original Assignee

Corning Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-06-25

Filing date

2001-01-08

Publication date

2003-01-21

2001-01-08 Application filed by Corning Inc filed Critical Corning Inc

2003-01-21 Application granted granted Critical

2003-01-21 Publication of TW518425B publication Critical patent/TW518425B/zh

Links

239000013078 crystal Substances 0.000 title claims abstract description 170
230000003287 optical effect Effects 0.000 title claims abstract description 123
KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims abstract description 67
238000001393 microlithography Methods 0.000 title description 2
210000004209 hair Anatomy 0.000 claims description 48
210000001161 mammalian embryo Anatomy 0.000 claims description 37
WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 36
229910001634 calcium fluoride Inorganic materials 0.000 claims description 36
230000007547 defect Effects 0.000 claims description 18
238000002834 transmittance Methods 0.000 claims description 9
230000005540 biological transmission Effects 0.000 claims description 8
230000002079 cooperative effect Effects 0.000 claims description 5
210000002257 embryonic structure Anatomy 0.000 claims description 5
229910052731 fluorine Inorganic materials 0.000 claims description 3
239000011737 fluorine Substances 0.000 claims description 3
230000002596 correlated effect Effects 0.000 claims description 2
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
101100294209 Schizosaccharomyces pombe (strain 972 / ATCC 24843) cnl2 gene Proteins 0.000 claims 1
239000000284 extract Substances 0.000 claims 1
239000000779 smoke Substances 0.000 claims 1
239000002023 wood Substances 0.000 claims 1
238000001459 lithography Methods 0.000 abstract description 10
238000000206 photolithography Methods 0.000 abstract description 5
210000000695 crystalline len Anatomy 0.000 description 70
239000011575 calcium Substances 0.000 description 4
239000000463 material Substances 0.000 description 4
238000000034 method Methods 0.000 description 4
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
229910052791 calcium Inorganic materials 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
239000004575 stone Substances 0.000 description 3
230000009286 beneficial effect Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000000879 optical micrograph Methods 0.000 description 2
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
GKXJWSZPLIKUPS-IUNAMMOKSA-N N-[(2Z,6Z)-2,6-bis(hydroxyimino)cyclohexylidene]hydroxylamine Chemical compound O\N=C1\CCC\C(=N\O)C1=NO GKXJWSZPLIKUPS-IUNAMMOKSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
230000008025 crystallization Effects 0.000 description 1
238000000295 emission spectrum Methods 0.000 description 1
LKCQGLAOZXEADP-UHFFFAOYSA-M fluororhenium Chemical compound [Re]F LKCQGLAOZXEADP-UHFFFAOYSA-M 0.000 description 1
-1 for example Chemical compound 0.000 description 1
238000001000 micrograph Methods 0.000 description 1
239000008267 milk Substances 0.000 description 1
210000004080 milk Anatomy 0.000 description 1
235000013336 milk Nutrition 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000000233 ultraviolet lithography Methods 0.000 description 1
210000002268 wool Anatomy 0.000 description 1

Classifications

- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Engineering & Computer Science (AREA)
Environmental & Geological Engineering (AREA)
Epidemiology (AREA)
Public Health (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Lenses (AREA)

TW90100475A 1999-06-25 2001-01-08 Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore TW518425B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US14115599P	1999-06-25	1999-06-25

Publications (1)

Publication Number	Publication Date
TW518425B true TW518425B (en)	2003-01-21

Family

ID=22494424

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW90100475A TW518425B (en)	1999-06-25	2001-01-08	Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore

Country Status (3)

Country	Link
EP (1)	EP1224497A4 (de)
TW (1)	TW518425B (de)
WO (1)	WO2001001182A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE10123725A1 (de)	2001-05-15	2002-11-21	Zeiss Carl	Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
US7239447B2 (en)	2001-05-15	2007-07-03	Carl Zeiss Smt Ag	Objective with crystal lenses
EP1390783A2 (de) *	2001-05-15	2004-02-25	Carl Zeiss	Objektiv mit fluorid-kristall-linsen
JP2004531764A (ja)	2001-05-16	2004-10-14	コーニングインコーポレイテッド	好ましい結晶方位をもつ立方晶系結晶材料光学素子
US6683710B2 (en)	2001-06-01	2004-01-27	Optical Research Associates	Correction of birefringence in cubic crystalline optical systems
US6649326B2 (en)	2001-09-14	2003-11-18	Corning Incorporated	Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion
US6970232B2 (en)	2001-10-30	2005-11-29	Asml Netherlands B.V.	Structures and methods for reducing aberration in integrated circuit fabrication systems
US6995908B2 (en)	2001-10-30	2006-02-07	Asml Netherlands B.V.	Methods for reducing aberration in optical systems
US7453641B2 (en)	2001-10-30	2008-11-18	Asml Netherlands B.V.	Structures and methods for reducing aberration in optical systems
US6669920B2 (en)	2001-11-20	2003-12-30	Corning Incorporated	Below 160NM optical lithography crystal materials and methods of making
JP3741208B2 (ja) *	2001-11-29	2006-02-01	株式会社ニコン	光リソグラフィー用光学部材及びその評価方法
JP2005519295A (ja) *	2002-03-05	2005-06-30	コーニングインコーポレイテッド	定方位光学フッ化物結晶ブランクの作成方法
WO2003077011A1 (en) *	2002-03-14	2003-09-18	Carl Zeiss Smt Ag	Optical system with birefringent optical elements
US7292388B2 (en)	2002-05-08	2007-11-06	Carl Zeiss Smt Ag	Lens made of a crystalline material
US7154669B2 (en) *	2002-08-05	2006-12-26	Asml Holding N.V.	Method and system for correction of intrinsic birefringence in UV microlithography
US6958864B2 (en)	2002-08-22	2005-10-25	Asml Netherlands B.V.	Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
US7075905B2 (en)	2002-09-11	2006-07-11	Qualcomm Incorporated	Quality indicator bit (QIB) generation in wireless communications systems
EP1586946A3 (de) *	2004-04-14	2007-01-17	Carl Zeiss SMT AG	Optisches System eines Projektions-Mikrolithographie Apparats
EP1598681A3 (de) *	2004-05-17	2006-03-01	Carl Zeiss SMT AG	Optische Komponente mit gekrümmter Oberfläche und Mehrlagenbeschichtung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5031977A (en) *	1989-12-27	1991-07-16	General Signal Corporation	Deep ultraviolet (UV) lens for use in a photolighography system
JPH10260349A (ja) *	1997-03-18	1998-09-29	Nikon Corp	紫外線レーザ用結像光学系
JP3856265B2 (ja) *	1998-03-12	2006-12-13	株式会社ニコン	光学素子の製造方法、光学素子の複屈折算出方法及び複屈折判定方法

2000
- 2000-06-22 EP EP00943048A patent/EP1224497A4/de not_active Withdrawn
- 2000-06-22 WO PCT/US2000/017165 patent/WO2001001182A1/en not_active Ceased
2001
- 2001-01-08 TW TW90100475A patent/TW518425B/zh active

Also Published As

Publication number	Publication date
EP1224497A1 (de)	2002-07-24
WO2001001182A1 (en)	2001-01-04
EP1224497A4 (de)	2003-08-27

Legal Events

Date	Code	Title	Description
2003-06-20	GD4A	Issue of patent certificate for granted invention patent

Publication	Publication Date	Title
TW518425B (en)	2003-01-21	Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore
JP5443375B2 (ja)	2014-03-19	紫外線反射光学素子、紫外線反射光学素子を作製する方法、および紫外線反射光学素子を備える投影露光装置
CN104380205B (zh)	2018-01-05	投射光刻的投射曝光设备
KR100894303B1 (ko)	2009-04-24	조사 편광 제어부를 구비한 광학 축소 시스템
TW565706B (en)	2003-12-11	Reflective projection lens for EUV-photolithography
EP0465882A2 (de)	1992-01-15	Hochauflösende reduzierende katadioptrische Relaislinse
JPH05281469A (ja)	1993-10-29	異なる屈折率の材質からなる適合された複数の要素を用いた広帯域光学縮小系
JPH1048526A (ja)	1998-02-20	高分解能高光度対物レンズ
JP2000114635A (ja)	2000-04-21	高透過率プリズムビ―ムエキスパンダを備える狭帯域化装置
KR101837801B1 (ko)	2018-03-12	밴드 복사의 억제를 위한 ｉｔｏ 흡수기를 갖춘 ｅｕｖ 마스크
JP6346915B2 (ja)	2018-06-20	反射フォトマスクおよび反射型マスクブランク
TWI724186B (zh)	2021-04-11	罩幕結構與罩幕製程方法
KR20070109928A (ko)	2007-11-15	투사 노광 장치, 투사 노광 방법 및 투사 대물렌즈
US10126644B2 (en)	2018-11-13	Pellicle for advanced lithography
JPH0588087A (ja)	1993-04-09	反射屈折縮小投影光学系
US20010053017A1 (en)	2001-12-20	Optical member for vacuum ultraviolet, and aligner and device manufacture method using same
CN102549461A (zh)	2012-07-04	用于微光刻的照明光学单元
TW487961B (en)	2002-05-21	Projection exposure apparatus and method for manufacturing devices using the same
TWI238262B (en)	2005-08-21	Coated optics to improve durability
JP2005509184A (ja)	2005-04-07	立方晶により製作されるリターデーション素子と該素子を有する光学系
TWI572904B (zh)	2017-03-01	對紫外線損傷具低感受性之Wynne-Dyson投射透鏡
TWI328147B (en)	2010-08-01	A new immersion lithography apparatus and method
JP4617492B2 (ja)	2011-01-26	偏光変調光学素子および偏光変調光学素子の製造方法
US6683714B1 (en)	2004-01-27	Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks
JPH1059799A (ja)	1998-03-03	光リソグラフィー装置