TW538256B - Microlithographic reduction projection catadioptric objective - Google Patents

Microlithographic reduction projection catadioptric objective Download PDF

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Publication number
TW538256B
TW538256B TW089127778A TW89127778A TW538256B TW 538256 B TW538256 B TW 538256B TW 089127778 A TW089127778 A TW 089127778A TW 89127778 A TW89127778 A TW 89127778A TW 538256 B TW538256 B TW 538256B
Authority
TW
Taiwan
Prior art keywords
group
lens
mirror
reflection
objective lens
Prior art date
Application number
TW089127778A
Other languages
English (en)
Inventor
David R Shafer
Original Assignee
Zeiss Stiftung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Application granted granted Critical
Publication of TW538256B publication Critical patent/TW538256B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/22—Telecentric objectives or lens systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/082—Catadioptric systems using three curved mirrors
    • G02B17/0828—Catadioptric systems using three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/0844—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/0848—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

538256 五、發明說明（3) 群組得由多數正光焦度透鏡組成 吾人會庄意到此系統中僅有—個 =面广#的右邊附近。此位置應％有統 熱t月況之-優‘點。在此前端内沒有非球面：透鏡加 要。反射鏡Ml至M4皆為球面且丘軸於址 也不需 能使該前端系統針對光瞳之球面像差;交二二有可 個比圖中所不略大的凹形反射鏡。其亦可在 ：要- 内得到校正且因此嘗試將凹形反射編的尺；組 士身m減小尺寸使該系統的機械二巴 貫例中’就-7公釐乘26公釐矩形像場大小來說在凹弟圖 射：L具有一個在圖式平面内約165公釐寬及在垂直i S 内約500公釐長的受照射區域。 直方向 此實例中任何光線離共同光學軸線之最大距 公釐。此比許多'、h設計"$的案例小得多，其中凹护反 射鏡厚度及托座厚度必須加到在摺疊式反射鏡之後從該 線至該凹形反射鏡之旁邊光線路徑距離内。此新設計的包 裝包絡絕對比較吸引人。 ”又。T的包 藉由使在凹形反射鏡M1附近之負透鏡L2具有較大光隹 度，得以在前端FE内投注比第一圖實例大的軸向色差和： 兹伐曲率。然而，一強力透鏡L2傾向於投注帶多過度校正 球面像差且使中間影像像差過大。是以此設計之一較佳版 本在凹形反射鏡附近有二個凹透鏡。 」 在物體平面0b附近之場透鏡L1亦可分開成二個較弱透 鏡以協助控制光瞳像差。最後，在標線板（ret i c丨e ) 538256
五、發明說明（4) (〇b )附近之凸形反射鏡M2得自場透鏡L1表面分離且製作 成一獨立光學元件。此造成一較複雜設計，但其能有較好 性能。 有可能使該系統符合一典型微影物鏡之所有第_級規 範，且具有藉遠心聚焦群組TFG内恰正透鏡之對佩茲伐曲 率校正以及軸向和橫向色彩校正。一實例示於第二圖，沒 有任何其他類型之像差校正。要注意到透鏡加熱相當均 勻’因為在所有透鏡L 21至L29上的光束直徑為大。 第三圖顯示進一步發展之實例。前端FE，的特徵在於
分離成三個透鏡L 31至L33的場透鏡群組。藉其助力達成一 良好品質的遠心性。又，聚焦透鏡群組!?!^，今具有更多透 鏡L3 6至L44。此聚焦透鏡群組FLG，具有少量非球面。在簡 化校正之反射折射前端FE，設計中亦有一些非球面，但此 非必要。大反射鏡M33仍製作成一球面，因為如此易於製 造0 非球面之較佳位置為在一孔徑或光瞳平面附近，亦即 在反射鏡们1上或透鏡L34，L35上（在此邊界光線高度超過 鄰近孔徑兩度之80%)，且另一方面在邊界光線高度小於 下一孔從南度之8 〇 %的稍遠處。後者的實例為場透鏡群組 之表面或為緊鄰像平面Im之最後二個透鏡。 此&計中之多色均方根波前誤差值在一4X設計〇· 75 NA之^公羞乘7公釐像場上於0· 05至〇· 13個波。該設計為 雙側遂〜且針對光瞳像差和失真校正。在標線板（Ob )端 的工作距離為3 4公釐且在晶圓端（I m )之工作距離為1 2公
538256 五、發明說明（5) - 釐。系統長度約為1 2 0 0公釐。 聚焦透鏡群組FLG’幾乎全為正透鏡（L41除外），不 具備強力曲線。中間影像處之極大量畸形像差係因為緊鄰 凹形反射鏡M31之二個凹透鏡L31和L35不具有在此觀點下_ 之最理想彎曲度。 表一為此實施例之透鏡資料的列表。 此類物鏡之透鏡鏡筒的機械構造比起具摺疊式光學轴 線之反射折射系統（例如、、h設計〃等）為非常有利。在 此僅有反射鏡M32和M33無法為完整盤形。不過反射鏡M33 得延伸成一完整環形體，其能安裝於一旋轉對稱結構内。 鏡筒必須在透鏡L33與L36之間於第三圖所示下側切開以對 光束提供通道，但其大體上得為圓柱形。僅有反射鏡M33
必須定位在此圓柱形鏡筒以外，但僅離一小段距離。 要具備與、、h設計’’相似的效果需要額外摺疊。摺疊 式反射鏡通常不受歡迎，因為會導致光束強度損失和品$ 劣化，多花生產成本和調整工作無助於影像品質。 亦有可能將反射鏡M33製造成一瑗拟毛& , : , t
甘处—杜丄、 ^ ^形毛坯（blank ) J 月b女政成此ί哀形零件在一圓柱形错辑
^ ^狂办鏡茼内於此區域内以J 徑延伸。 輕易可知該凹形球面反 有透鏡之圓柱形包絡（其具 的僅有反射鏡。此再次顯示 剛性之小型圓柱形鏡筒内。 射鏡Μ 3 3為到達一前述圍繞所 有最大半徑透鏡之半徑）以外 此類物鏡適合安裝在一高固有
上述實例中之透鏡材料為氟化鈣，氟石
538256 五、發明說明（6) 亦即就準 及氟化 (fluorspar )。可單獨或混合使用其他材料， 分子雷射之其他波長。石英玻璃（最終適度摻 物晶體皆為適當材料。 / 在沬紫外線（EUV )微影範疇中習知之四個、六 八個或更多反射鏡的物鏡設計通常都適合作為本」 群組之原始設計，最終差別在於提供一虛像而非二實:端 上述貫加例並不侷限本發明之範圍。申請專利範 其組合界定發明範圍。除了申請專利範圍中提及之$带及 射鏡外，摺疊式平坦反射鏡偶爾可進入該系統内。乂反
第10頁 538256 五、發明說明（7) 衣
Shafep-deslgn .75NA.4x.75mm Obj.-hlght ROY INFINITY 1^7.23231 236.79S22 〇.〇〇〇〇〇〇 YES 3.273300E-07 100 145.44401 224.64885 •223.00016 •134.S944S •97.23630 -928.69926 •75.28503 -115.14787 •134.282S2 CCY THC loo loo 100 ：〇〇 loo loo ΤΗΓ 34.000000 21.000000 1.000000 KC : CUF: 100 〇.〇〇〇〇〇〇 CCF: 100 B :0. -201130E-11 C :· -·87：2δ〇ε·16 0 :0 3C : 100 CC : 100 DC : i.l：3100E-19 100 27.000000 51.1BS724 25.004072 162.565291 12.000000 24.980383 15.000Qa〇 3.000000 〇.〇〇〇〇〇〇
100 IOC ASP K IC ·· 〇.〇〇〇〇〇〇 KC r 100 ： YES CUF: 〇.〇〇〇〇〇〇 CCF: :0.474310E-08 B :0, .5065702-12 c : : 100 BC : 100 cc : 100 .234590c-17 130 100 100 100 loo lao 100 100 100 130 loo :〇〇 100 100 100 100 〇 ：0.93ia30E-21 〇C : ：Q〇
12: •11S.14787 •15.000000 •CAF.1JV· 13: •75.28503 •24.980333 U： •923.69926 *12.000000 •CAP.UV· 15: •97.23630 -162.666291 16: *184.59445 •25.004072 •CAF-υν. 17: •223.00015 *11.195502 13: •363.91714 11.195502 REFL ASP: K : 〇.〇〇〇〇〇〇 KC ： 100 IC : YES CUF: 〇.〇〇〇〇〇〇 CCF: 100 A : -107960E-07 B :0.17〇83〇ε·13 C ：. .328133E-16 AC : 100 3C : 100 CC ; ICO
E 19 *223.00015 25.004072 •CAF-UV 100 100 20 •184.59445 162.666291 100 100 21 ASP -96.00000 IS.000000 100 ICC K •1.000000 KC ： 100 IC YES CUF 〇.〇〇〇〇〇〇 CCF: 130 A AC 〇.〇〇〇〇〇〇E^OO 9 :0.000000£-*-〇〇 C :0.300030E^00 0 :0, .000：： 100 9C : 100 CC : ：0C DC : I： 100 100
22: INFINITY 23: -247.00000 ASP
24.980383 67.808099 ASP K IC -1.000000 KC 100 ： YES CUF 〇.〇〇〇〇〇〇 CCF ：0.OOOOOOE-OO 3 〇.〇〇〇〇〇〇£+00 c : 100 9： 100 c: •237.00000 266.861281 •1.000000 <C 100 YES CUF 〇.〇〇〇〇〇〇 CCF: 〇.〇〇〇〇〇〇E>00 B 〇.〇〇〇〇〇〇E-00 c : 100 BC 100 cc : .0C0C3：£-O0 100 〇.〇〇〇〇〇〇E-00 LCD DC : :: ：00 13： D :0.D0Q3DD£+00 〇C : 130 •470.62323 210.84570
•266.861281 R£FL 266.861201 REFL 100 100 ASP K 〇.〇〇〇〇〇〇 KC IC : YES CUF: 〇.〇〇〇〇〇〇 CCF； ISC A -.419940E-08 8 -.904030E-13 C : -.297400Ξ-17 AC : 100 BC : 100 CC : 100 D :-.；052i：E-21 DC : ：：： 27; 29: INFINITY 1621.80000 35.031723 33,000000 ASP K 〇.〇〇〇〇〇〇 KC ' : 100 IC YES CUF: 〇.〇〇〇〇〇〇 CCF A 0.155580E-07 B : -.854090E-12 C AC 100 BC : 100 CC IOC .：2324：£-16 100 100
10： 13C 9 0 12 3 4 2 3 3 3 3 3 35: 36: S7C: 38: 3?: 4〇: -025231 7 7 9 7 9 0 4 2 3 9 2 7 7 eo 9 T* 3 2 0 3 6 6 0 3 0 6 9 10 9 0 7 9 2 0 5 0 2 9 4 0 8 0 2 9 5 0 7 7 0 4 9 4 6 2 2 13 2
'CAr-UV 'CAF-UT *CAr-UV
100 ：：0 100 ICC 100 IOC 100 100 100 :23 100 ICC : 100 : 0.000000 CCF :0.lS5S10E.il C ： loo cc :00 :37:·:·:5 D :0.£55：i：;-20 :3: DC : ··:: 109 242 *264 .372 173 .412*16 90063 23740 99433 29^67 30S22 0.000300 Y£3 001：S2 529315 219742 998329 000000 100 ::: 100 100 :co 100 ：0'： 100 :C3 100 :c: 100
538256 五、發明說明（8)
A .0.628520E-07 B :·.915530E-11 C : · .628040E-15 0 :. .946620E-19 AC 100 BC : 100 CC : 100 DC : 100 41 1411.60000 4.845900 100 100 42 110.28842 22.740804 •CAF-UV* 100 100 43 160.79657 13.371732 100 100 44 69.10873 45.185600 •CAF-UV* 100 100 45 ASP -895.78799 11.999039 100 100 K 0.000000 KC 100 IC YES CUF 〇.〇〇〇〇〇〇 CCF: 100 A -.113590E-06 8 0.281520E-09 C :·.171880Ε·12 0 :0, .507740E-16 AC 100 BC 100 CC : 100 DC : 100 IMG: INFINITY 〇.〇〇〇〇〇〇 100 100 SPECIFICATION DATA
ΝΑΟ TEL DIM WL REF WTW XOB YOB WTF VUX VLX VUY VLY *0.18750 MH 157.63 2 1 0.00000 0.00000 0.00000 70.15600 0.00000 1.00000 0.00000 •0.00941 0.00000 -0.00941 0.00000 •0.00531 0.00000 •0.01985 157.63 1 0.00000 0.00000 26.51700 75.00000 0.00000 1.00000 0.00138 0.01082 0.00138 0.01082 0.00065 0.00535 0.00370 0.02220 157.63 1 0.00000 40.00000 1.00000 .0.00308 -0.00308 *0.00224 •0.00706 0.00000 53.03300 1.00000 •0.00534 .0.00534 *0.00398 •0.01156 0.00000 64.95100 1.00000 .0.00803 •0.00303 •0.00520 -0.01709
APERTURE DATA/EDGE DEFINITIONS CA APERTURE data not specified for surface Obj thru 46 PRIVATE CATALOG PWL 157.63 •CAF-UV* 1.558411 REFRACTIVE INDICES GLASS CODE •CAF-UV. No solves defined in system No pickups defined in system 157.63 1.558410 157.63 1.558409 157.63 1.558409 157.63 1.558410 157.03 1.558411 INFINITE CONJUGATES EFL *56053.1391 3FL -16500.9052 FFL 0.2642E-^06 FNO 0.0000 AT USED CONJUGATES RED *0.2500 FNO *0.6667 OBJ DIS 34.0000 IT 1198.5355 IMG DIS 11.9990 OAL 1152.5365 PARAXIAL IHAGE HT 18.7496 THI 12.0008 ANG 0.0000 ENTRANCE PUPIL OIA 0.381ΘΕ+10 THI 0.1000E+11 EXIT PUPIL DIA 25217.8299 THI -16501.3415 CODE V> out t
第12頁 538256 圖式簡單說明 L1 :場透鏡 L2 :強力透鏡 L21 、 L22 、 L23 、L24 、L25 、L26 、L27 、L28 、 L29 、L31 、 L32 、L33 、 L34 、L35 、L36 、 L37 、 L38 、 L39 、 L40 、L41 、 L42、L43、L44 :透鏡 Ml、M2、M3、M4 :反身于鏡
第13頁

Claims (1)

  1. 538256 案號 89127778 六、申請專利範圍 1 · 一種包含至少一個弧形反射鏡及」 縮減投影之反射折射物鏡，其特徵在 反射鏡的影像側上包含一孔徑平面。 2 ·如申請專利範圍第1項之微影縮減 鏡’其包含四個弧形反射鏡和多於八 3.如申請專利範圍第2項之微影縮減 鏡，其包含不超過一個光學元件以一 切削。 4·如申請專利範圍第2項之物鏡，豆 射鏡。 八 5·如申請專利範圍第2項之物鏡，其 數來，第一和第三個弧形反射鏡為凹 6·如申請專利範圍第1項之物鏡，其 所有曲率之一平直對稱軸線。 八 7·如申請專利範圍第6項之物鏡 表面為旋轉之區段或完整表面。 8·如申請專利範圍第1項之物鏡 元整盤狀時不擔到光束路徑。 9；如申請專利範圍第1項之物鏡 鄰該物體平面且為物體側遠心。 10·
    該 L少一個透鏡之微影 於在最靠影像之弧形 投影之反射折射物 個的透鏡。 投影之反射折射物 實質非旋轉對稱形式 包含至少一個球面反 中從物體平面端依序 形且第四個是凸形。 包含所有光學元件之 等弧形反射鏡之光學 其中當所有透鏡建構為 其包含一場透鏡群組緊 種包含至少一個弧形反射鏡及至少一個透鏡之微影 為百減投衫之反射折射物鏡，其特徵在 弧形反射鏡之後發散。 U·如申請專利範圍第ίο項之微影縮 於光束經最靠影像之 減投影之反射折射物
    538256
    鏡，其從物體侧至 群組；一反射折射 反射鏡，產生轴向 組；及一正透鏡群 影像側依序由以下 群組’其包含一或 色差；一包含奇數 組。 群組構成：一場透鏡 多個負透鏡和一凹形 個弧形反射鏡之群 12.如申請專利範圍第1〇項之物鏡，#包含一中間影像， 有。至y二個反射鏡配置在光束路徑内之上游。 10 ·、種匕έ至夕一個弧形反射鏡及至少一個透鏡之微影 縮之反射折射㈣，其特徵在於其為具備〆無遮蔽 光目里：3所有光學元件之所有曲率之一平直對稱軸線的系 統’/、中不超過二個光學元件切削成實質脫離盤狀。 14·如申請專利範圍第13項之微影縮減投影之反射折射物 鏡，其k物體侧至影像側依序由以下群組構成：一反射折 射群組，#包含-弧形反射鏡且具有一負縮減比例；一包 含奇數個弧形反射鏡之群組且具有一正縮減比例；及一折 射透鏡群組，其具有一負縮減比例。 1 5·如申請專利範圍第丨4項之微影縮減投影之反射折射物 鏡，其中該反射折射群組包含一正場透鏡群組及一負透鏡 群組緊鄰該反射鏡，且其中該折射透鏡群組所含正透鏡^ 負透鏡多。 特徵在於所有透鏡鲁 了一個以外的所有 16·如申請專利範圍第1 3項之物鏡，其 都在一最小半徑圓柱形包絡内，其中除 弧形反射鏡位在相同包絡内。 17· 一種微影縮減投影之反射折射物鏡，其從物體側至景< 像侧依序由以下群組構成··一反射折射群組，其造 2 538256 i號 8912777R 六、申請專利範圍 貫中間影像；一反射或反射折 折射群組，其造成一實像 曰 修正 射群組，其造成一虛像； 及 18·如申請專利範圍第1 7項之物鏡，其 鏡群級緊 比負透鏡 物鏡，盆 公釐之條 包含一正場透鏡群組及一負透 中該折射透鏡群組所 19·如申請專利範圍 為5公釐乘20公釐至8 孔徑（NA )係介於〇. 2 0· —種微影縮減投 像侧依序由以下群組 含正透鏡 第1 7項之 公釐乘3 0 7至1之間 影之反射 中該反射 鄰該反射 多。 特徵在於 件下，影 折射物鏡，其從物 組’其包含一或多個負透鏡和 形反射鏡 第2 0項之 生群組内 差；一包含奇數個弧 21·如申請專利範圍 在一反射折射色差產 一凹形反射鏡構成。 2 2· —種微影縮減投 像側依序由以下群組 形反射鏡且具有一負 之群組且具有一正縮 一負縮減比例。 構成：一場透鏡群 凹形反 之群組； 物鏡，其 ，該群組 影之反射折射物鏡 構成：一反射折射 縮減比例 減比例； ;一包含 及一折射 組；一反 射鏡，產 及一正透 包含一孔 由至少一 ’其從物 群組，其 奇數個弧 透鏡群組 折射群Μ 鏡，且其 在一像場 像側數值 體側至影 射折射群 生轴向色 鏡群組。 梭平面位 負透鏡和 體側至影 包含一弧 形反射鏡 ’其具有 23· 一種微影縮減投影之反射折射物鏡，其包人夕一 之偶數個弧形反射鏡’ #徵為一無遮蔽系統：個 鏡比弧形反射鏡多，沒有摺疊式平坦反射鏡且含透 弧形反射鏡之影像侧上包含一孔徑平面。 牡攻罪影像 538256 AL年 修正 案號 89127778 六、申請專利範圍 24. 一種微影縮減投影之反射折射物鏡，其包二個 之偶數個弧形反射鏡，特徵為一無遮蔽系所 形反射鏡多，其中光束經最靠影像之弧形反射斤鏡之 25. 二種，影縮減投影之反射折射物鏡，其包含四個弧形 和^八個的透鏡，其$具備—無遮蔽光㊣包含所 ^ Π之所有曲率之一平直對稱轴線的系統，其中不 超過一個光學元件切削成實質脫離盤狀。 2的6弧：影之反射折射物鏡，#包含多於二個 且i::;r-個光學元件以-實質非旋轉 成：-反射折射群組，其序由以下群組構 反射折射群組，1 1 + 、成真只中間影像；一反射或 實像。 成一虛像；及一折射群組，其造成一 2 7. 一種包含$. 縮減投影之反射f 2形反射鏡及至少一個透鏡之微影 為凸形。射折射物鏡，其特徵在於最靠影像之反射鏡 28· —種投影曝照裝置，直一 統，一標線板處^ 八 早刀子光源，一照射系 圍第1，10, 13, 17 μ =位及掃描系統，一個如申請專利範 及一晶圓處理、二’ ，23, 24, 2 5, 2 6或”項之投影物鏡， 疋位及掃描系統。
    第17頁 538256 _9〇 ^ Q 圖式
    第3頁
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WO2001055767A3 (en) 2002-05-23
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DE60028245T2 (de) 2007-03-15
US20010043391A1 (en) 2001-11-22

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