JPH1020195A - 反射屈折光学系 - Google Patents

反射屈折光学系

Info

Publication number
JPH1020195A
JPH1020195A JP8188364A JP18836496A JPH1020195A JP H1020195 A JPH1020195 A JP H1020195A JP 8188364 A JP8188364 A JP 8188364A JP 18836496 A JP18836496 A JP 18836496A JP H1020195 A JPH1020195 A JP H1020195A
Authority
JP
Japan
Prior art keywords
optical system
mirror
imaging optical
imaging
catadioptric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8188364A
Other languages
English (en)
Inventor
Tetsuo Takahashi
哲男 高橋
Yasuhiro Omura
泰弘 大村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8188364A priority Critical patent/JPH1020195A/ja
Priority to KR1019970022136A priority patent/KR980005330A/ko
Priority to US08/883,748 priority patent/US5835275A/en
Publication of JPH1020195A publication Critical patent/JPH1020195A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

(57)【要約】 【課題】ミラーの偏芯によって発生する収差が小さいた
めにミラーの組み込みに要求される精度が緩やかにな
り、したがってクオーターミクロン単位の解像度を安定
して得ることができる反射屈折光学系を提供する。 【解決手段】第１面Ｒからの光束が往路のみ透過する往
路光学系Ａ1と、凹面鏡ＭCと該凹面鏡ＭCへの入射光と
反射光との双方が透過するレンズ群とからなる往復光学
系Ａ2とによって第１結像光学系Ａを形成し、この第１
結像光学系Ａによって第１面Ｒの中間像を形成し、中間
像の近傍に第１結像光学系Ａからの光束を第２結像光学
系Ｂへ導くように第１のミラーＭ1を配置し、第２結像
光学系Ｂによって中間像の再結像を第２面Ｗ上に形成
し、第２結像光学系Ｂ内に第２のミラーＭ2と開口絞り
Ｓとを配置した反射屈折光学系において、所要の条件を
満足するように第２のミラーＭ2と開口絞りＳとを配置
したことを特徴とする。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、例えば半導体素
子、または液晶表示素子等をフォトリソグラフィ工程で
製造する際に使用される投影露光装置の光学系に関し、
特に光学系の要素として反射系を用いることにより、紫
外線波長域でクオーターミクロン単位の解像度を有する
反射屈折光学系に関する。
【０００２】
【発明が解決しようとする課題】半導体素子等を製造す
るためのフォトリソグラフィー工程において使用される
投影露光装置においては、像面湾曲の補正のために、反
射屈折光学系が提案されている（特開平４−２３４７２
２、ＵＳＰ４，７７９，９６６）。この反射屈折光学系
としては、凹面鏡を含む第１結像光学系によって第１面
の中間像を形成し、中間像の近傍に第１結像光学系から
の光束を第２結像光学系へ導くようにミラーを配置し、
第２結像光学系によって中間像の再結像を第２面上に形
成する構成が提案されている。しかしこの構成では、光
路を折り曲げるミラーが１つしか用いられていないため
に、第１面に配置するレチクルと第２面に配置するウエ
ハとが平行にならず、レチクルとウエハとの同期走査を
行いにくいという問題点がある。そこで第２結像光学系
内に第２のミラーを配置して、レチクルとウエハとを平
行にする構成が提案されている。
【０００３】しかるに一般に反射屈折光学系内にミラー
を用いる場合、ミラーの偏芯チルトによって大きな収差
が発生するおそれがある。そのためクオーターミクロン
単位の解像度の像を安定して得るためには、ミラーの組
み込み公差として著しく高い精度が要求されることとな
る。本発明はかかる点に鑑み、ミラーの偏芯によって発
生する収差が小さいためにミラーの組み込みに要求され
る精度が緩やかになり、したがってクオーターミクロン
単位の解像度を安定して得ることができる反射屈折光学
系を提供することを課題とする。
【０００４】
【課題を解決するための手段】上述の課題を解決するた
めに、本発明による反射屈折光学系は、第１面からの光
束が往路のみ透過する往路光学系と、凹面鏡と該凹面鏡
への入射光と反射光との双方が透過するレンズ群とから
なる往復光学系とによって第１結像光学系を形成し、こ
の第１結像光学系によって第１面の中間像を形成し、中
間像の近傍に第１結像光学系からの光束を第２結像光学
系へ導くように第１のミラーを配置し、第２結像光学系
によって中間像の再結像を第２面上に形成し、第２結像
光学系内に第２のミラーと開口絞りとを配置した反射屈
折光学系において、 Ｌ1：第２のミラーから開口絞りまでの光軸上での距離 Ｌ：第１面から第２面に至る光路に沿って測った光軸上
での距離 Ｌ2：第１のミラーから第２面に至る光路に沿って測っ
た光軸上での距離 としたとき、次の（１）式と（２）式とのうちの少なく
ともいずれか一方の式を満足するように、第２のミラー
と開口絞りとを配置したことを特徴としている。 Ｌ1／Ｌ＜０．１ （１） Ｌ1／Ｌ2＜０．２ （２）
【０００５】上記の構成により、第２のミラーが第２結
像光学系の開口絞りの近くに配置されるから、第２のミ
ラーを通過する全ての光線が比較的光軸と平行に近くな
り、第２のミラーが偏芯チルトすることによって発生す
る偏芯収差（コマ収差、非点収差、歪曲収差）が小さく
なる。したがって第２のミラーに要求される偏芯公差が
緩やかになる。上記条件式（１）と（２）は、第２のミ
ラーと開口絞りとの近さの程度を表すものであり、した
がって条件式（１）と（２）のいずれも満たさないとき
には、第２のミラーが偏芯チルトすることによって発生
する偏芯収差が大きくなりやすく、第２のミラーに対す
る偏芯公差が著しく厳しくなる。
【０００６】本発明においては、 ｆ1：第２結像光学系のうちの第２のミラーよりも第２
面側に配置したレンズ群の合成焦点距離 としたとき、 ｜Ｌ1／ｆ1｜＜１．５ （３） なる条件を満足することが好ましい。条件式（３）を満
足することにより、Ｌ1に比べてｆ1がある程度大きくな
るから、第２結象光学系の収差量が減る。逆にこの条件
を満たさない場合には、ｆ1が小さくなり、第２結像光
学系の収差補正が困難になる。
【０００７】また本発明においては、 β1：第２のミラーを物点としたとき、第２結像光学系
のうちの第２のミラーよりも第２面側に配置したレンズ
群による結像倍率 としたとき、 ｜β1｜＜０．２ （４） なる条件を満足することが好ましい。条件式（４）は、
第２のミラー位置での各光線の間の傾きを小さくするた
めの条件である。この条件式を満たさないと、第２のミ
ラー位置での各光線が互いに平行の状態から大きくずれ
て互いに傾きあい、したがって第２のミラーによって生
ずる各光線の間での反射率ムラが大きくなる。
【０００８】
【発明の実施の形態】本発明の実施の形態を図面によっ
て説明する。図１及び図３はそれぞれ本発明の第１及び
第２実施例による反射屈折光学系を示す。両実施例の光
学系とも、レチクルＲ上の回路パターンを半導体ウエハ
Ｗに縮小転写する投影光学系に本発明を適用したもので
ある。この投影光学系は、レチクルＲに描いたパターン
の中間像を形成する第１結像光学系Ａと、中間像の近傍
に配置した第１のミラーＭ1と、中間像の再結像をウエ
ハＷ上に形成する第２結像光学系Ｂとを有する。第１結
像光学系Ａは、レチクルＲからの光束が往路のみ透過す
る往路光学系Ａ1と、往路光学系Ａ1からの光束が往復透
過する往復光学系Ａ2とからなる。往復光学系Ａ2には、
往路光学系Ａ1からの光束を反射するように凹面鏡ＭCが
配置され、この凹面鏡ＭCにもっとも近いレンズは凹レ
ンズとなっている。往復光学系Ａ2を復路で通過した光
束は、第１のミラーＭ1によって第２結像光学系Ｂに導
かれている。第２結像光学系Ｂ内には開口絞りＳが配置
されており、この開口絞りＳの手前側に第２のミラーＭ
2が配置されている。この反射屈折光学系による露光範
囲は、光軸を含まないスリット状もしくは円弧状となっ
ており、レチクルＲとウエハＷとを同期して走査するこ
とにより、大きな露光領域を得るように構成されてい
る。
【０００９】以下の表１及び表２に、それぞれ第１及び
第２実施例の光学部材の諸元を示す。両表中、第１カラ
ムはレチクルＲからの各光学面の番号、第２カラムｒは
各光学面の曲率半径、第３カラムｄは各光学面の間隔、
第４カラムは各レンズの材質、第５カラムは各光学部材
の群番号を示す。第５カラム中、＊印は復路を示す。な
お合成石英（ＳｉＯ2）と蛍石（ＣａＦ2）の使用基準波
長（１９３ｎｍ）に対する屈折率ｎは次の通りである。 ＳｉＯ2： ｎ＝1.56019 ＣａＦ2： ｎ＝1.50138 また以下の表３に、両実施例についてＬ1、Ｌ、Ｌ2、ｆ
1、及び前記各条件式中のパラメータの値を示す。また
図２及び図４に、それぞれ第１及び第２実施例の横収差
を示す。横収差図中、Ｙは像高を示す。
【００１０】
【表１】
【００１１】
【表２】
【００１２】
【表３】
【００１３】以上のように第１実施例では、第２のミラ
ーＭ2を開口絞りＳより２０５．６の位置に配してお
り、また第２実施例では、第２のミラーＭ2を開口絞り
Ｓより２３０の位置に配している。この結果、偏芯によ
り発生するコマ収差、非点収差、歪曲収差が小さくな
り、クオーターミクロン単位の解像度を安定して有する
反射屈折光学系を得ることができる。また、第２のミラ
ーＭ2によって生ずる反射率ムラも軽減することができ
る。なお上記両実施例では第２のミラーＭ2を開口絞り
Ｓの手前側に配置したが、上記各条件式を満たす範囲
で、開口絞りＳの後ろ側に配置することもできる。
【００１４】
【発明の効果】以上のように本発明による反射屈折光学
系では、第２結像光学系内の第２のミラーを開口絞りの
近くに配置しているから、偏芯により発生する偏心収差
を小さくすることができ、また第２のミラーによって生
ずる反射率ムラも軽減することができる。
【図面の簡単な説明】
【図１】第１実施例を示す構成図
【図２】第１実施例の横収差図
【図３】第２実施例を示す構成図
【図４】第２実施例の横収差図
【符号の説明】 Ａ…第１結像光学系 Ａ1…往路光学系 Ａ2…往復光学系 Ｂ…第２結像光学系 ＭC…凹面鏡 Ｍ1…第１のミラー Ｍ2…第２のミラー Ｓ…開口絞り Ｒ…レチクル Ｗ…ウエハ

Claims (3)

    【特許請求の範囲】
  1. 【請求項１】第１面からの光束が往路のみ透過する往路
    光学系と、凹面鏡と該凹面鏡への入射光と反射光との双
    方が透過するレンズ群とからなる往復光学系とによって
    第１結像光学系を形成し、該第１結像光学系によって前
    記第１面の中間像を形成し、該中間像の近傍に前記第１
    結像光学系からの光束を第２結像光学系へ導くように第
    １のミラーを配置し、前記第２結像光学系によって前記
    中間像の再結像を第２面上に形成し、前記第２結像光学
    系内に第２のミラーと開口絞りとを配置した反射屈折光
    学系において、次の（１）式と（２）式とのうちの少な
    くともいずれか一方の式を満足するように、前記第２の
    ミラーと開口絞りとを配置したことを特徴とする反射屈
    折光学系。 Ｌ1／Ｌ＜０．１ （１） Ｌ1／Ｌ2＜０．２ （２） 但し、Ｌ1：前記第２のミラーから開口絞りまでの光軸
    上での距離 Ｌ：前記第１面から第２面に至る光路に沿って測った光
    軸上での距離 Ｌ2：前記第１のミラーから第２面に至る光路に沿って
    測った光軸上での距離 である。
  2. 【請求項２】次の条件を満足する請求項１記載の反射屈
    折光学系。 ｜Ｌ1／ｆ1｜＜１．５ （３） 但し、ｆ1：前記第２結像光学系のうちの第２のミラー
    よりも第２面側に配置したレンズ群の合成焦点距離 である。
  3. 【請求項３】次の条件を満足する請求項１又は２記載の
    反射屈折光学系。 ｜β1｜＜０．２ （４） 但し、β1：前記第２のミラーを物点としたとき、前記
    第２結像光学系のうちの第２のミラーよりも第２面側に
    配置したレンズ群による結像倍率 である。
JP8188364A 1996-06-28 1996-06-28 反射屈折光学系 Pending JPH1020195A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8188364A JPH1020195A (ja) 1996-06-28 1996-06-28 反射屈折光学系
KR1019970022136A KR980005330A (ko) 1996-06-28 1997-05-30 반사굴절 광학계
US08/883,748 US5835275A (en) 1996-06-28 1997-06-27 Catadioptric system for photolithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8188364A JPH1020195A (ja) 1996-06-28 1996-06-28 反射屈折光学系

Publications (1)

Publication Number Publication Date
JPH1020195A true JPH1020195A (ja) 1998-01-23

Family

ID=16222334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8188364A Pending JPH1020195A (ja) 1996-06-28 1996-06-28 反射屈折光学系

Country Status (3)

Country Link
US (1) US5835275A (ja)
JP (1) JPH1020195A (ja)
KR (1) KR980005330A (ja)

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US6654100B2 (en) 2000-03-09 2003-11-25 Nikon Corporation Stage device and exposure apparatus, and method of manufacturing a device
US6707616B1 (en) 1998-04-07 2004-03-16 Nikon Corporation Projection exposure apparatus, projection exposure method and catadioptric optical system
JP2007266311A (ja) * 2006-03-28 2007-10-11 Japan Vilene Co Ltd 電気二重層キャパシタ用セパレータ及び電気二重層キャパシタ
WO2008004646A1 (en) 2006-07-01 2008-01-10 Nikon Corporation Exposure apparatus that includes a phase change circulation system for movers
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