TW571433B - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

Info

Publication number: TW571433B
Authority: TW; Taiwan
Prior art keywords: misfet; misfets; driving; pair; vertical
Prior art date: 2001-08-24

Application number

TW091111892A

Other languages

English (en)

Chinese (zh)

Inventor

Takeshi Hashimoto

Hidetoshi Iwai

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-08-24

Filing date

2002-06-03

Publication date

2004-01-11

2002-06-03 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

2004-01-11 Application granted granted Critical

2004-01-11 Publication of TW571433B publication Critical patent/TW571433B/zh

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 216
239000000758 substrate Substances 0.000 claims abstract description 57
230000005540 biological transmission Effects 0.000 claims abstract description 56
238000004519 manufacturing process Methods 0.000 claims description 54
238000000034 method Methods 0.000 claims description 38
230000002079 cooperative effect Effects 0.000 claims description 23
230000004888 barrier function Effects 0.000 claims description 17
239000003990 capacitor Substances 0.000 claims description 7
238000009413 insulation Methods 0.000 claims description 4
239000013589 supplement Substances 0.000 claims 3
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 42
229920005591 polysilicon Polymers 0.000 abstract description 2
238000010030 laminating Methods 0.000 abstract 1
239000010408 film Substances 0.000 description 125
238000010586 diagram Methods 0.000 description 41
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
229910052814 silicon oxide Inorganic materials 0.000 description 29
238000005229 chemical vapour deposition Methods 0.000 description 10
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
229910052751 metal Inorganic materials 0.000 description 9
239000002184 metal Substances 0.000 description 9
229910052698 phosphorus Inorganic materials 0.000 description 9
239000011574 phosphorus Substances 0.000 description 9
229920002120 photoresistant polymer Polymers 0.000 description 9
238000000926 separation method Methods 0.000 description 8
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
230000015572 biosynthetic process Effects 0.000 description 7
229910052796 boron Inorganic materials 0.000 description 7
239000004576 sand Substances 0.000 description 7
229910052581 Si3N4 Inorganic materials 0.000 description 6
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
230000000295 complement effect Effects 0.000 description 4
238000001312 dry etching Methods 0.000 description 4
239000012535 impurity Substances 0.000 description 4
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
238000004544 sputter deposition Methods 0.000 description 3
239000000126 substance Substances 0.000 description 3
101100286980 Daucus carota INV2 gene Proteins 0.000 description 2
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
238000003860 storage Methods 0.000 description 2
101150110971 CIN7 gene Proteins 0.000 description 1
101150110298 INV1 gene Proteins 0.000 description 1
229910052770 Uranium Inorganic materials 0.000 description 1
101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
230000009194 climbing Effects 0.000 description 1
230000000875 corresponding effect Effects 0.000 description 1
239000013078 crystal Substances 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
230000014759 maintenance of location Effects 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
238000005498 polishing Methods 0.000 description 1
230000003068 static effect Effects 0.000 description 1
239000010409 thin film Substances 0.000 description 1
JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
238000009279 wet oxidation reaction Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

Semiconductor Memories (AREA)

TW091111892A 2001-08-24 2002-06-03 Semiconductor memory device TW571433B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2001255202A JP2003068883A (ja)	2001-08-24	2001-08-24	半導体記憶装置

Publications (1)

Publication Number	Publication Date
TW571433B true TW571433B (en)	2004-01-11

Family

ID=19083220

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW091111892A TW571433B (en)	2001-08-24	2002-06-03	Semiconductor memory device

Country Status (3)

Country	Link
JP (1)	JP2003068883A (ja)
TW (1)	TW571433B (ja)
WO (1)	WO2003019663A1 (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004096065A (ja)	2002-07-08	2004-03-25	Renesas Technology Corp	半導体記憶装置およびその製造方法
JP4343571B2 (ja)	2002-07-31	2009-10-14	株式会社ルネサステクノロジ	半導体装置の製造方法
JP2004221242A (ja)	2003-01-14	2004-08-05	Renesas Technology Corp	半導体集積回路装置およびその製造方法
JP4606006B2 (ja) *	2003-09-11	2011-01-05	ルネサスエレクトロニクス株式会社	半導体装置の製造方法
JP5018475B2 (ja) *	2005-02-23	2012-09-05	富士通セミコンダクター株式会社	半導体回路装置及びその半導体回路装置の製造方法
JP2007013196A (ja) *	2006-08-23	2007-01-18	Renesas Technology Corp	半導体装置
JP2008159669A (ja) *	2006-12-21	2008-07-10	Matsushita Electric Ind Co Ltd	半導体記憶装置
US8183628B2 (en)	2007-10-29	2012-05-22	Unisantis Electronics Singapore Pte Ltd.	Semiconductor structure and method of fabricating the semiconductor structure
US8378425B2 (en)	2008-01-29	2013-02-19	Unisantis Electronics Singapore Pte Ltd.	Semiconductor storage device
JP5317343B2 (ja)	2009-04-28	2013-10-16	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	半導体装置及びその製造方法
US8598650B2 (en)	2008-01-29	2013-12-03	Unisantis Electronics Singapore Pte Ltd.	Semiconductor device and production method therefor
US8581333B2 (en)	2008-04-16	2013-11-12	Renesas Electronics Corporation	Semiconductor device and method for manufacturing the same
JP4987926B2 (ja) *	2009-09-16	2012-08-01	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	半導体装置
JP5356970B2 (ja)	2009-10-01	2013-12-04	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	半導体装置
CN102725842B (zh)	2010-02-05	2014-12-03	株式会社半导体能源研究所	半导体器件
JP4912513B2 (ja)	2010-03-08	2012-04-11	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	固体撮像装置
US8487357B2 (en)	2010-03-12	2013-07-16	Unisantis Electronics Singapore Pte Ltd.	Solid state imaging device having high sensitivity and high pixel density
JP5066590B2 (ja)	2010-06-09	2012-11-07	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	半導体装置とその製造方法
JP5087655B2 (ja)	2010-06-15	2012-12-05	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	半導体装置及びその製造方法
CN102832221B (zh) *	2011-06-16	2016-10-26	三星电子株式会社	具有竖直装置和非竖直装置的半导体装置及其形成方法
US8564034B2 (en)	2011-09-08	2013-10-22	Unisantis Electronics Singapore Pte. Ltd.	Solid-state imaging device
US8669601B2 (en)	2011-09-15	2014-03-11	Unisantis Electronics Singapore Pte. Ltd.	Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8916478B2 (en)	2011-12-19	2014-12-23	Unisantis Electronics Singapore Pte. Ltd.	Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en)	2011-12-19	2014-07-08	Unisantis Electronics Singapore Pte. Ltd.	Method for manufacturing semiconductor device and semiconductor device
US8748938B2 (en)	2012-02-20	2014-06-10	Unisantis Electronics Singapore Pte. Ltd.	Solid-state imaging device
JP6174370B2 (ja) *	2013-05-15	2017-08-02	猛英白土	半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01265558A (ja) *	1988-04-15	1989-10-23	Sony Corp	半導体メモリ
US5198683A (en) *	1991-05-03	1993-03-30	Motorola, Inc.	Integrated circuit memory device and structural layout thereof
JPH06104405A (ja) *	1992-09-22	1994-04-15	Toshiba Corp	スタティック型メモリ
JPH07153273A (ja) *	1993-11-26	1995-06-16	Hitachi Ltd	半導体集積回路装置
JP3403231B2 (ja) *	1993-05-12	2003-05-06	三菱電機株式会社	半導体装置およびその製造方法
JP3745392B2 (ja) *	1994-05-26	2006-02-15	株式会社ルネサステクノロジ	半導体装置
US5670803A (en) *	1995-02-08	1997-09-23	International Business Machines Corporation	Three-dimensional SRAM trench structure and fabrication method therefor
JP2921468B2 (ja) *	1996-02-19	1999-07-19	日本電気株式会社	半導体メモリ装置
JP3936830B2 (ja) *	1999-05-13	2007-06-27	株式会社日立製作所	半導体装置

2001
- 2001-08-24 JP JP2001255202A patent/JP2003068883A/ja active Pending
2002
- 2002-06-03 TW TW091111892A patent/TW571433B/zh not_active IP Right Cessation
- 2002-06-06 WO PCT/JP2002/005613 patent/WO2003019663A1/ja not_active Ceased

Also Published As

Publication number	Publication date
WO2003019663A1 (en)	2003-03-06
JP2003068883A (ja)	2003-03-07

Legal Events

Date	Code	Title	Description
2004-05-10	GD4A	Issue of patent certificate for granted invention patent
2015-10-11	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TW571433B (en)	2004-01-11	Semiconductor memory device
TWI482268B (zh)	2015-04-21	靜態隨機存取記憶胞及其製造方法
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US6118158A (en)	2000-09-12	Static random access memory device having a memory cell array region in which a unit cell is arranged in a matrix
TW497253B (en)	2002-08-01	Semiconductor integrated circuit device and its manufacturing method
TW320776B (ja)	1997-11-21
CN100539157C (zh)	2009-09-09	半导体存储器及其制造方法
TWI244163B (en)	2005-11-21	SRAM cell with multiple-gate transistors
US9245893B1 (en)	2016-01-26	Semiconductor constructions having grooves dividing active regions
US6870231B2 (en)	2005-03-22	Layouts for CMOS SRAM cells and devices
US20120202330A1 (en)	2012-08-09	Semiconductor device and method of manufacturing the same
TW200405523A (en)	2004-04-01	A semiconductor memory device and a method of manufacturing the same
TW411627B (en)	2000-11-11	Semiconductor device and manufacture thereof
US6437455B2 (en)	2002-08-20	Semiconductor device having gate-gate, drain-drain, and drain-gate connecting layers and method of fabricating the same
US7485525B2 (en)	2009-02-03	Method of manufacturing a multiple port memory having a plurality of parallel connected trench capacitors in a cell
JP2003031686A (ja)	2003-01-31	半導体記憶装置およびその製造方法
JP2002289703A (ja)	2002-10-04	半導体記憶装置およびその製造方法
JP2004079696A (ja)	2004-03-11	半導体記憶装置
JP2010177521A (ja)	2010-08-12	半導体記憶装置の製造方法
JP2001358232A (ja)	2001-12-26	半導体記憶装置
JPH06260593A (ja)	1994-09-16	三次元半導体とその製造方法
US6563177B2 (en)	2003-05-13	Semiconductor memory device having a trench and a gate electrode vertically formed on a wall of the trench
JPWO2012017535A1 (ja)	2013-09-19	半導体装置
JP2001308204A (ja)	2001-11-02	半導体記憶装置
JP4024495B2 (ja)	2007-12-19	半導体集積回路装置