TWI320232B - A dmos device with a programmable threshold voltage - Google Patents

A dmos device with a programmable threshold voltage Download PDF

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Publication number
TWI320232B
TWI320232B TW092122157A TW92122157A TWI320232B TW I320232 B TWI320232 B TW I320232B TW 092122157 A TW092122157 A TW 092122157A TW 92122157 A TW92122157 A TW 92122157A TW I320232 B TWI320232 B TW I320232B
Authority
TW
Taiwan
Prior art keywords
current source
floating gate
electrode
dmos
dielectric material
Prior art date
Application number
TW092122157A
Other languages
English (en)
Chinese (zh)
Other versions
TW200405571A (en
Inventor
Richard A Blanchard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/217,893 external-priority patent/US6882573B2/en
Priority claimed from US10/218,010 external-priority patent/US6734495B2/en
Application filed filed Critical
Publication of TW200405571A publication Critical patent/TW200405571A/zh
Application granted granted Critical
Publication of TWI320232B publication Critical patent/TWI320232B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW092122157A 2002-08-13 2003-08-12 A dmos device with a programmable threshold voltage TWI320232B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/217,893 US6882573B2 (en) 2002-08-13 2002-08-13 DMOS device with a programmable threshold voltage
US10/218,010 US6734495B2 (en) 2002-08-13 2002-08-13 Two terminal programmable MOS-gated current source

Publications (2)

Publication Number Publication Date
TW200405571A TW200405571A (en) 2004-04-01
TWI320232B true TWI320232B (en) 2010-02-01

Family

ID=31720179

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092122157A TWI320232B (en) 2002-08-13 2003-08-12 A dmos device with a programmable threshold voltage

Country Status (6)

Country Link
EP (1) EP1550150A4 (de)
JP (1) JP2005536048A (de)
KR (1) KR20050056200A (de)
AU (1) AU2003269956A1 (de)
TW (1) TWI320232B (de)
WO (1) WO2004015745A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100881015B1 (ko) * 2006-11-30 2009-01-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP5272472B2 (ja) * 2008-03-28 2013-08-28 サンケン電気株式会社 半導体装置
CN112864234B (zh) * 2019-11-27 2022-04-15 苏州东微半导体股份有限公司 Igbt功率器件
CN112885900B (zh) * 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 一种igbt器件
CN112885827B (zh) * 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 一种半导体超结功率器件
CN117637854B (zh) * 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直型电容耦合栅控结型场效应晶体管及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3007892C2 (de) * 1980-03-01 1982-06-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-Gate-Speicherzelle
EP0205637A1 (de) * 1985-06-25 1986-12-30 Eaton Corporation Bidirektionaler Leistungsfeldeffekttransistor mit gespeicherten Ladungen
JPS6129177A (ja) * 1984-07-19 1986-02-10 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ
US4589009A (en) * 1984-10-09 1986-05-13 The United States Of America As Represented By The Secretary Of The Army Non-volatile piezoelectric memory transistor
JP2654384B2 (ja) * 1987-09-18 1997-09-17 株式会社日立製作所 不揮発性メモリ付大電力半導体装置
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
JPH022177A (ja) * 1988-06-14 1990-01-08 Sharp Corp 浮遊ゲート付電界効果型トランジスタ
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
JP3367255B2 (ja) * 1995-03-08 2003-01-14 株式会社デンソー 半導体装置及びその製造方法
US5633518A (en) * 1995-07-28 1997-05-27 Zycad Corporation Nonvolatile reprogrammable interconnect cell with FN tunneling and programming method thereof
JP3371708B2 (ja) * 1996-08-22 2003-01-27 ソニー株式会社 縦型電界効果トランジスタの製造方法
DE69832019T2 (de) * 1997-09-09 2006-07-20 Interuniversitair Micro-Electronica Centrum Vzw Verfahren zur Löschung und Programmierung eines Speichers in Kleinspannungs-Anwendungen und Anwendungen mit geringer Leistung
JP2000232171A (ja) * 1999-02-10 2000-08-22 Nec Kyushu Ltd 半導体装置およびその製造方法
JP2001035942A (ja) * 1999-07-22 2001-02-09 Toyota Central Res & Dev Lab Inc 不揮発性半導体メモリ装置
DE19941684B4 (de) * 1999-09-01 2004-08-26 Infineon Technologies Ag Halbleiterbauelement als Verzögerungselement
JP4277381B2 (ja) * 1999-09-21 2009-06-10 株式会社デンソー 炭化珪素半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2004015745A3 (en) 2004-04-29
EP1550150A2 (de) 2005-07-06
WO2004015745A2 (en) 2004-02-19
AU2003269956A1 (en) 2004-02-25
JP2005536048A (ja) 2005-11-24
AU2003269956A8 (en) 2004-02-25
EP1550150A4 (de) 2009-08-19
TW200405571A (en) 2004-04-01
KR20050056200A (ko) 2005-06-14

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MM4A Annulment or lapse of patent due to non-payment of fees