TWI330766B - Microelectronic cleaning and arc remover compositions - Google Patents

Microelectronic cleaning and arc remover compositions Download PDF

Info

Publication number: TWI330766B
Authority: TW; Taiwan
Prior art keywords: cleaning; weight; cleaning composition; residue; composition
Prior art date: 2002-06-07

Application number

TW092114287A

Other languages

English (en)

Chinese (zh)

Other versions

TW200401958A (en

Inventor

Sherman Hsu Chien-Pin

Original Assignee

Mallinckrodt Bader Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-06-07

Filing date

2003-05-27

Publication date

2010-09-21

2003-05-27 Application filed by Mallinckrodt Bader Inc filed Critical Mallinckrodt Bader Inc

2004-02-01 Publication of TW200401958A publication Critical patent/TW200401958A/zh

2010-09-21 Application granted granted Critical

2010-09-21 Publication of TWI330766B publication Critical patent/TWI330766B/zh

Links

239000000203 mixture Substances 0.000 title claims description 76
238000004140 cleaning Methods 0.000 title claims description 48
238000004377 microelectronic Methods 0.000 title claims description 11
229910052751 metal Inorganic materials 0.000 claims description 20
239000002184 metal Substances 0.000 claims description 20
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
238000000034 method Methods 0.000 claims description 15
239000010949 copper Substances 0.000 claims description 14
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 14
229920002120 photoresistant polymer Polymers 0.000 claims description 13
229910052802 copper Inorganic materials 0.000 claims description 11
239000000758 substrate Substances 0.000 claims description 10
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
239000006117 anti-reflective coating Substances 0.000 claims description 6
229910052739 hydrogen Inorganic materials 0.000 claims description 6
239000001257 hydrogen Substances 0.000 claims description 6
239000000126 substance Substances 0.000 claims description 6
239000003495 polar organic solvent Substances 0.000 claims description 5
239000003795 chemical substances by application Substances 0.000 claims description 4
150000001875 compounds Chemical class 0.000 claims description 4
150000002484 inorganic compounds Chemical class 0.000 claims description 4
229910010272 inorganic material Inorganic materials 0.000 claims description 4
150000002902 organometallic compounds Chemical class 0.000 claims description 4
230000008569 process Effects 0.000 claims description 4
RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 claims description 3
239000000654 additive Substances 0.000 claims description 3
230000000996 additive effect Effects 0.000 claims description 3
229910052782 aluminium Inorganic materials 0.000 claims description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
239000008139 complexing agent Substances 0.000 claims description 3
238000001465 metallisation Methods 0.000 claims description 3
239000002002 slurry Substances 0.000 claims description 3
150000002894 organic compounds Chemical class 0.000 claims description 2
238000005498 polishing Methods 0.000 claims description 2
HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims 2
FCKYPQBAHLOOJQ-UWVGGRQHSA-N 2-[[(1s,2s)-2-[bis(carboxymethyl)amino]cyclohexyl]-(carboxymethyl)amino]acetic acid Chemical group OC(=O)CN(CC(O)=O)[C@H]1CCCC[C@@H]1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UWVGGRQHSA-N 0.000 claims 1
KRGSYPJDPDVZAA-UHFFFAOYSA-N C(CN(CCCCCCCCCCP(O)(O)=O)CCCCCCCCCCP(O)(O)=O)N(CCCCCCCCCCP(O)(O)=O)CCCCCCCCCCP(O)(O)=O Chemical compound C(CN(CCCCCCCCCCP(O)(O)=O)CCCCCCCCCCP(O)(O)=O)N(CCCCCCCCCCP(O)(O)=O)CCCCCCCCCCP(O)(O)=O KRGSYPJDPDVZAA-UHFFFAOYSA-N 0.000 claims 1
PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 claims 1
238000004132 cross linking Methods 0.000 claims 1
239000011368 organic material Substances 0.000 claims 1
239000004575 stone Substances 0.000 claims 1
239000007800 oxidant agent Substances 0.000 description 18
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
-1 hydroxyl groups Amine Chemical class 0.000 description 11
239000002904 solvent Substances 0.000 description 10
LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
229910052799 carbon Inorganic materials 0.000 description 9
239000002253 acid Substances 0.000 description 8
NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 8
238000005530 etching Methods 0.000 description 8
239000000463 material Substances 0.000 description 8
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 7
229940120146 EDTMP Drugs 0.000 description 7
229910021529 ammonia Inorganic materials 0.000 description 7
239000003960 organic solvent Substances 0.000 description 7
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
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125000003118 aryl group Chemical group 0.000 description 6
125000004432 carbon atom Chemical group C* 0.000 description 6
239000011889 copper foil Substances 0.000 description 6
FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 5
PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 5
239000003989 dielectric material Substances 0.000 description 5
239000003112 inhibitor Substances 0.000 description 5
230000002378 acidificating effect Effects 0.000 description 4
150000001298 alcohols Chemical class 0.000 description 4
125000000217 alkyl group Chemical group 0.000 description 4
238000004380 ashing Methods 0.000 description 4
238000005260 corrosion Methods 0.000 description 4
230000007797 corrosion Effects 0.000 description 4
239000006184 cosolvent Substances 0.000 description 4
150000002739 metals Chemical class 0.000 description 4
238000012545 processing Methods 0.000 description 4
239000000047 product Substances 0.000 description 4
239000000243 solution Substances 0.000 description 4
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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238000001035 drying Methods 0.000 description 3
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239000004094 surface-active agent Substances 0.000 description 3
125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 3
AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical group NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 2
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
101100005280 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) cat-3 gene Proteins 0.000 description 2
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
239000007864 aqueous solution Substances 0.000 description 2
RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
239000012965 benzophenone Substances 0.000 description 2
239000011230 binding agent Substances 0.000 description 2
150000001721 carbon Chemical group 0.000 description 2
YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
239000012153 distilled water Substances 0.000 description 2
150000002222 fluorine compounds Chemical class 0.000 description 2
LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
235000011187 glycerol Nutrition 0.000 description 2
KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
230000001939 inductive effect Effects 0.000 description 2
239000004615 ingredient Substances 0.000 description 2
KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
229920000620 organic polymer Polymers 0.000 description 2
150000002978 peroxides Chemical class 0.000 description 2
JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
238000006722 reduction reaction Methods 0.000 description 2
239000003381 stabilizer Substances 0.000 description 2
238000006467 substitution reaction Methods 0.000 description 2
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
238000010998 test method Methods 0.000 description 2
VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
239000010936 titanium Substances 0.000 description 2
229910052719 titanium Inorganic materials 0.000 description 2
SSJXIUAHEKJCMH-PHDIDXHHSA-N (1r,2r)-cyclohexane-1,2-diamine Chemical compound N[C@@H]1CCCC[C@H]1N SSJXIUAHEKJCMH-PHDIDXHHSA-N 0.000 description 1
VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
BLPGWZAQVVZJOA-UHFFFAOYSA-N 1-butyl-9h-fluorene Chemical compound C1C2=CC=CC=C2C2=C1C(CCCC)=CC=C2 BLPGWZAQVVZJOA-UHFFFAOYSA-N 0.000 description 1
JEXYCADTAFPULN-UHFFFAOYSA-N 1-propylsulfonylpropane Chemical compound CCCS(=O)(=O)CCC JEXYCADTAFPULN-UHFFFAOYSA-N 0.000 description 1
HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 description 1
125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
NFTHULPHIBKNNM-UHFFFAOYSA-N 3-methylcyclobutene Chemical compound CC1CC=C1 NFTHULPHIBKNNM-UHFFFAOYSA-N 0.000 description 1
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DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
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206010033557 Palpitations Diseases 0.000 description 1
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238000010521 absorption reaction Methods 0.000 description 1
VYTBPJNGNGMRFH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O VYTBPJNGNGMRFH-UHFFFAOYSA-N 0.000 description 1
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ISWSIDIOOBJBQZ-UHFFFAOYSA-M phenolate Chemical compound [O-]C1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-M 0.000 description 1
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229910052717 sulfur Inorganic materials 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
238000012360 testing method Methods 0.000 description 1
DVUVKWLUHXXIHK-UHFFFAOYSA-N tetraazanium;tetrahydroxide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[OH-].[OH-].[OH-].[OH-] DVUVKWLUHXXIHK-UHFFFAOYSA-N 0.000 description 1
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1
BZWNJUCOSVQYLV-UHFFFAOYSA-H trifluoroalumane Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[Al+3].[Al+3] BZWNJUCOSVQYLV-UHFFFAOYSA-H 0.000 description 1
238000009966 trimming Methods 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
- C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
- C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0783—Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
General Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Manufacturing & Machinery (AREA)
Microelectronics & Electronic Packaging (AREA)
Detergent Compositions (AREA)
Cleaning Or Drying Semiconductors (AREA)

TW092114287A 2002-06-07 2003-05-27 Microelectronic cleaning and arc remover compositions TWI330766B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US38680002P	2002-06-07	2002-06-07
US40168802P	2002-08-07	2002-08-07

Publications (2)

Publication Number	Publication Date
TW200401958A TW200401958A (en)	2004-02-01
TWI330766B true TWI330766B (en)	2010-09-21

Family

ID=29739917

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092114287A TWI330766B (en)	2002-06-07	2003-05-27	Microelectronic cleaning and arc remover compositions

Country Status (17)

Country	Link
US (1)	US8906838B2 (2)
EP (1)	EP1512050A2 (2)
JP (1)	JP4330529B2 (2)
KR (1)	KR100958068B1 (2)
CN (2)	CN102135735A (2)
AU (1)	AU2003240827A1 (2)
BR (1)	BR0311830A (2)
CA (1)	CA2488737A1 (2)
IL (1)	IL165581A (2)
IN (2)	IN2004CH02744A (2)
MY (1)	MY142745A (2)
NO (1)	NO20050075L (2)
PL (1)	PL207297B1 (2)
RS (1)	RS106104A (2)
TW (1)	TWI330766B (2)
WO (1)	WO2003104901A2 (2)
ZA (1)	ZA200409622B (2)

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2003
- 2003-05-27 US US10/515,372 patent/US8906838B2/en active Active
- 2003-05-27 BR BR0311830-4A patent/BR0311830A/pt not_active IP Right Cessation
- 2003-05-27 CN CN2011100761494A patent/CN102135735A/zh active Pending
- 2003-05-27 RS YUP-1061/04A patent/RS106104A/sr unknown
- 2003-05-27 CN CN038130262A patent/CN1659480A/zh active Pending
- 2003-05-27 PL PL374021A patent/PL207297B1/pl not_active IP Right Cessation
- 2003-05-27 CA CA002488737A patent/CA2488737A1/en not_active Abandoned
- 2003-05-27 JP JP2004511911A patent/JP4330529B2/ja not_active Expired - Fee Related
- 2003-05-27 TW TW092114287A patent/TWI330766B/zh not_active IP Right Cessation
- 2003-05-27 KR KR1020047019579A patent/KR100958068B1/ko not_active Expired - Lifetime
- 2003-05-27 WO PCT/US2003/016829 patent/WO2003104901A2/en not_active Ceased
- 2003-05-27 EP EP03731423A patent/EP1512050A2/en not_active Withdrawn
- 2003-05-27 AU AU2003240827A patent/AU2003240827A1/en not_active Abandoned
- 2003-06-06 MY MYPI20032124A patent/MY142745A/en unknown
2004
- 2004-11-29 ZA ZA200409622A patent/ZA200409622B/xx unknown
- 2004-12-06 IL IL165581A patent/IL165581A/en active IP Right Grant
- 2004-12-06 IN IN2744CH2004 patent/IN2004CH02744A/en unknown
- 2004-12-07 IN IN2762CH2004 patent/IN2004CH02762A/en unknown
2005
- 2005-01-06 NO NO20050075A patent/NO20050075L/no not_active Application Discontinuation

Also Published As

Publication number	Publication date
JP4330529B2 (ja)	2009-09-16
AU2003240827A8 (en)	2003-12-22
IN2004CH02744A (2)	2006-02-10
CN1659480A (zh)	2005-08-24
MY142745A (en)	2010-12-31
CA2488737A1 (en)	2003-12-18
NO20050075L (no)	2005-01-06
PL207297B1 (pl)	2010-11-30
BR0311830A (pt)	2005-03-29
PL374021A1 (en)	2005-09-19
US20050176602A1 (en)	2005-08-11
IL165581A0 (en)	2006-01-15
EP1512050A2 (en)	2005-03-09
KR20050012770A (ko)	2005-02-02
ZA200409622B (en)	2006-05-31
TW200401958A (en)	2004-02-01
AU2003240827A1 (en)	2003-12-22
IL165581A (en)	2009-06-15
RS106104A (sr)	2007-04-10
CN102135735A (zh)	2011-07-27
WO2003104901A2 (en)	2003-12-18
KR100958068B1 (ko)	2010-05-14
US8906838B2 (en)	2014-12-09
WO2003104901A3 (en)	2004-03-18
IN2004CH02762A (2)	2006-02-10
JP2005529363A (ja)	2005-09-29

Legal Events

Date	Code	Title	Description
2023-07-11	MK4A	Expiration of patent term of an invention patent

Publication	Publication Date	Title
TWI330766B (en)	2010-09-21	Microelectronic cleaning and arc remover compositions
TWI322827B (en)	2010-04-01	Microelectronic cleaning compositions containing oxidizers and organic solvents
JP4819429B2 (ja)	2011-11-24	残留物を除去するための組成物及び方法
KR100595024B1 (ko)	2006-07-03	박리제 조성물
TWI355416B (en)	2012-01-01	Aqueous cleaning composition for removing residues
JP4750807B2 (ja)	2011-08-17	半導体基材用洗浄剤
TWI379174B (en)	2012-12-11	Nanoelectronic and microelectronic cleaning compositions
KR100942009B1 (ko)	2010-02-12	포토레지스트, 에칭 잔류물 및 ｂａｒｃ를 제거하기 위한제제
CN104395989A (zh)	2015-03-04	用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液
CN104488068A (zh)	2015-04-01	选择性去除灰化旋涂玻璃的方法
JP5674373B2 (ja)	2015-02-25	洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法
US20040152608A1 (en)	2004-08-05	Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TWI353381B (en)	2011-12-01	Non-aqueous, non-corrosive microelectronic cleanin
CN102334069B (zh)	2013-07-10	基于多用途酸性有机溶剂的微电子清洗组合物
EP1404796B1 (en)	2012-02-15	Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TW200405133A (en)	2004-04-01	Cleaning solution for forming dual damascene structure and method for treating substrate