TWI341440B - Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same - Google Patents

Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same

Info

Publication number
TWI341440B
TWI341440B TW095123336A TW95123336A TWI341440B TW I341440 B TWI341440 B TW I341440B TW 095123336 A TW095123336 A TW 095123336A TW 95123336 A TW95123336 A TW 95123336A TW I341440 B TWI341440 B TW I341440B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
same
resist pattern
resist composition
Prior art date
Application number
TW095123336A
Other languages
English (en)
Other versions
TW200736852A (en
Inventor
Koji Nozaki
Miwa Kozawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200736852A publication Critical patent/TW200736852A/zh
Application granted granted Critical
Publication of TWI341440B publication Critical patent/TWI341440B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
TW095123336A 2006-03-24 2006-06-28 Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same TWI341440B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006083173A JP4801477B2 (ja) 2006-03-24 2006-03-24 レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200736852A TW200736852A (en) 2007-10-01
TWI341440B true TWI341440B (en) 2011-05-01

Family

ID=37074706

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095123336A TWI341440B (en) 2006-03-24 2006-06-28 Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same

Country Status (6)

Country Link
US (1) US7611819B2 (zh)
EP (1) EP1837706A1 (zh)
JP (1) JP4801477B2 (zh)
KR (1) KR100743008B1 (zh)
CN (2) CN101042531B (zh)
TW (1) TWI341440B (zh)

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US20090029286A1 (en) * 2007-07-23 2009-01-29 Jae Hyun Kang Method for Fabricating Photoresist Pattern
US8028400B2 (en) * 2008-03-06 2011-10-04 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic write head
KR101439394B1 (ko) * 2008-05-02 2014-09-15 삼성전자주식회사 산 확산을 이용하는 더블 패터닝 공정에 의한 반도체소자의 미세 패턴 형성 방법
US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8409457B2 (en) * 2008-08-29 2013-04-02 Micron Technology, Inc. Methods of forming a photoresist-comprising pattern on a substrate
US8039399B2 (en) * 2008-10-09 2011-10-18 Micron Technology, Inc. Methods of forming patterns utilizing lithography and spacers
US8273634B2 (en) 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
US8247302B2 (en) 2008-12-04 2012-08-21 Micron Technology, Inc. Methods of fabricating substrates
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US8268543B2 (en) 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8455341B2 (en) 2010-09-02 2013-06-04 Micron Technology, Inc. Methods of forming features of integrated circuitry
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
JP2013076748A (ja) * 2011-09-29 2013-04-25 Sumitomo Bakelite Co Ltd 感光性樹脂組成物、硬化膜、保護膜、絶縁膜、およびそれを用いた半導体装置、表示体装置
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
KR102028109B1 (ko) * 2011-12-23 2019-11-15 금호석유화학 주식회사 미세패턴 형성용 수용성 수지 조성물 및 이를 이용한 미세패턴의 형성방법
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
EP3605227A4 (en) * 2017-03-31 2020-04-22 The School Corporation Kansai University RESIST COMPOSITION AND STRUCTURAL MOLDING METHOD WITH USE THEREOF AND JOINT AND RESIN
CN110950301B (zh) * 2018-09-27 2023-04-07 哈尔滨工业大学（威海） 一种基于纳米线材料的柔性电极复杂图案的制备方法

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JPH04216556A (ja) * 1990-12-18 1992-08-06 Hitachi Ltd パターン形成法
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Also Published As

Publication number Publication date
JP4801477B2 (ja) 2011-10-26
CN101042531B (zh) 2010-12-01
TW200736852A (en) 2007-10-01
CN101833243B (zh) 2011-11-16
KR100743008B1 (ko) 2007-07-27
EP1837706A1 (en) 2007-09-26
CN101042531A (zh) 2007-09-26
JP2007256787A (ja) 2007-10-04
US7611819B2 (en) 2009-11-03
CN101833243A (zh) 2010-09-15
US20070224537A1 (en) 2007-09-27

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MM4A Annulment or lapse of patent due to non-payment of fees