TWI459560B - 單體整合式場效電晶體（fet）及蕭特基二極體、半導體結構、及溝道mos障壁蕭特基（tmbs)整流器 - Google Patents

單體整合式場效電晶體（fet）及蕭特基二極體、半導體結構、及溝道mos障壁蕭特基（tmbs)整流器 Download PDF

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Publication number
TWI459560B
TWI459560B TW096145647A TW96145647A TWI459560B TW I459560 B TWI459560 B TW I459560B TW 096145647 A TW096145647 A TW 096145647A TW 96145647 A TW96145647 A TW 96145647A TW I459560 B TWI459560 B TW I459560B
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Taiwan
Prior art keywords
fet
region
channel
schottky
layer
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TW096145647A
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English (en)
Chinese (zh)
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TW200834922A (en
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法萊德 撒迅
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快捷半導體公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW096145647A 2006-12-06 2007-11-30 單體整合式場效電晶體（fet）及蕭特基二極體、半導體結構、及溝道mos障壁蕭特基（tmbs)整流器 TWI459560B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86888406P 2006-12-06 2006-12-06
US11/747,847 US7732842B2 (en) 2006-12-06 2007-05-11 Structure and method for forming a planar schottky contact

Publications (2)

Publication Number Publication Date
TW200834922A TW200834922A (en) 2008-08-16
TWI459560B true TWI459560B (zh) 2014-11-01

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Family Applications (1)

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TW096145647A TWI459560B (zh) 2006-12-06 2007-11-30 單體整合式場效電晶體（fet）及蕭特基二極體、半導體結構、及溝道mos障壁蕭特基（tmbs)整流器

Country Status (7)

Country Link
US (3) US7732842B2 (de)
KR (1) KR101447016B1 (de)
CN (1) CN101553931B (de)
AT (1) AT506666A2 (de)
DE (1) DE112007002971T5 (de)
TW (1) TWI459560B (de)
WO (1) WO2008070491A2 (de)

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US7732842B2 (en) * 2006-12-06 2010-06-08 Fairchild Semiconductor Corporation Structure and method for forming a planar schottky contact
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US7879686B2 (en) * 2009-01-16 2011-02-01 Infineon Technologies Austria Ag Semiconductor device and method for manufacturing
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
EP2543072B1 (de) 2010-03-02 2021-10-06 Vishay-Siliconix Strukturen und verfahren zur herstellung von doppelgate-vorrichtungen
TWI418015B (zh) * 2010-05-13 2013-12-01 科軒微電子股份有限公司 具有場效整流元件之功率半導體結構及其製造方法
CN102263059B (zh) * 2010-05-25 2013-09-18 科轩微电子股份有限公司 整合肖特基二极管与功率晶体管于基材的制造方法
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
WO2012158977A2 (en) 2011-05-18 2012-11-22 Vishay-Siliconix Semiconductor device
US8836024B2 (en) 2012-03-20 2014-09-16 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein having a contact within a Schottky region and a process of forming the same
JP2013201286A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 半導体素子
WO2014038110A1 (ja) * 2012-09-06 2014-03-13 三菱電機株式会社 半導体装置
KR101828495B1 (ko) 2013-03-27 2018-02-12 삼성전자주식회사 평탄한 소스 전극을 가진 반도체 소자
KR101934893B1 (ko) 2013-03-27 2019-01-03 삼성전자 주식회사 그루브 소스 컨택 영역을 가진 반도체 소자의 제조 방법
US9552993B2 (en) 2014-02-27 2017-01-24 Semiconductor Components Industries, Llc Semiconductor device and manufacturing method thereof
CN105448980B (zh) * 2014-06-13 2019-03-29 北大方正集团有限公司 沟槽型vdmos器件及其制作方法
CN104517960B (zh) * 2014-08-13 2017-08-08 上海华虹宏力半导体制造有限公司 具有屏蔽栅的沟槽栅mosfet和肖特基二极管的集成结构
EP3183753B1 (de) 2014-08-19 2025-03-19 Vishay-Siliconix Mosfet-halbleiteranordnung
US9177968B1 (en) 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
CN106024895A (zh) * 2016-06-27 2016-10-12 电子科技大学 一种集成肖特基二极管的积累型屏蔽栅mosfet
US10593760B2 (en) 2018-08-02 2020-03-17 Semiconductor Components Industries, Llc Method for forming trench semiconductor device having Schottky barrier structure
DE102018120734B4 (de) * 2018-08-24 2025-01-30 Infineon Technologies Ag Halbleitervorrichtung, die ein übergangsmaterial in einem graben enthält, und herstellungsverfahren
TWI689977B (zh) * 2019-01-11 2020-04-01 力源半導體股份有限公司 溝渠式功率電晶體及其製作方法
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
US20220069073A1 (en) * 2020-08-28 2022-03-03 Nanjing Zizhu Microelectronics Co., Ltd. Integrated circuit system with super junction transistor mechanism and method of manufacture thereof
CN114023812B (zh) * 2021-10-20 2023-08-22 上海华虹宏力半导体制造有限公司 屏蔽栅沟槽型mosfet器件及其制作方法
JP7724761B2 (ja) 2022-10-11 2025-08-18 ウィル セミコンダクター （シャンハイ） カンパニー リミテッド トレンチゲートタイプｉｇｂｔ
CN116454137A (zh) * 2023-04-19 2023-07-18 重庆云潼科技有限公司 一种集成SBD的槽型裂源SiC VDMOS结构及制造方法
CN119132948B (zh) * 2024-08-22 2025-10-31 上海华虹宏力半导体制造有限公司 减小肖特基槽底台阶高度的方法

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Also Published As

Publication number Publication date
DE112007002971T5 (de) 2009-10-08
CN101553931B (zh) 2013-06-12
US20120098061A1 (en) 2012-04-26
KR20090096459A (ko) 2009-09-10
US20080135889A1 (en) 2008-06-12
US8044461B2 (en) 2011-10-25
AT506666A2 (de) 2009-10-15
US20110079845A1 (en) 2011-04-07
KR101447016B1 (ko) 2014-11-03
CN101553931A (zh) 2009-10-07
WO2008070491A2 (en) 2008-06-12
TW200834922A (en) 2008-08-16
US7732842B2 (en) 2010-06-08
US8450798B2 (en) 2013-05-28
WO2008070491A3 (en) 2009-04-09

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