US20030119332A1 - Method for raw etching silicon solar cells - Google Patents

Method for raw etching silicon solar cells Download PDF

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Publication number
US20030119332A1
US20030119332A1 US10/168,797 US16879702A US2003119332A1 US 20030119332 A1 US20030119332 A1 US 20030119332A1 US 16879702 A US16879702 A US 16879702A US 2003119332 A1 US2003119332 A1 US 2003119332A1
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Prior art keywords
etching
acid
mixture
silicon
etching mixture
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US10/168,797
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Armin Kuebelbeck
Claudia Zielinski
Thomas Goelzenleuchter
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BASF SE
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Assigned to MERCK PATENT GMBH reassignment MERCK PATENT GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GOEKZENLEUCHTER, THOMAS, KUEBELBECK, ARMIN, WIEGAND, CLAUDIA
Publication of US20030119332A1 publication Critical patent/US20030119332A1/en
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Priority to US12/906,769 priority Critical patent/US8461057B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a novel process for producing textured surfaces on multicrystalline, tricrystalline and monocrystalline silicon surfaces of solar cells or on silicon substrates which are used for photovoltaic purposes. It relates in particular to an etching process and an etching agent for producing a textured surface on a silicon substrate.
  • Monocrystalline or multicrystalline solar cells are typically cut from solid pulled silicon rods or from cast silicon blocks by wire sawing (Dietl J., Helmreich D., Sirtl E., Crystals: Growth, Properties and Applications, Vol. 5 Springer Verlag 1981, pp. 57 and 73).
  • EFG Edge defined Film Growth
  • tricrystalline silicon U.S. Pat. No. 5,702,538
  • the monocrystalline or multicrystalline silicon which has been sawn in this way has a rough surface, also known as saw damage, with surface roughnesses of approximately 20-30 ⁇ m.
  • saw damage a rough surface
  • a so-called damage etch is required.
  • the contaminants situated in the trenches on the surface are removed during this damage etch. These contaminants are in particular abraded metal from the saw wire, but also traces of grinding abrasive. This etching is typically carried out in approximately 30% caustic pot ash or soda lye at temperatures of approximately 70° C. and higher.
  • the multicrystalline silicon which is pulled using the EFG process does not have any saw damage in the plane, since the production process does not involve a sawing process.
  • texturing would be advantageous in order to improve efficiency.
  • the production of random pyramids fails on account of the multicrystalline nature of the material.
  • the surface is roughened by mechanical blasting with, extremely fine sand or corundum or silicon carbide particles [JP 59-82778(1984)].
  • the process is mechanically very complex and both the process control and the contamination of the surface with cationic contaminants are deemed to be extremely unfavourable.
  • V-shaped trenches are milled into the surface of the substrate [DE19930043].
  • Drawbacks include the high mechanical outlay and the contamination with abraded metal. Subsequent cleaning and etching are necessary and expensive.
  • the relatively thin design of the silicon which is generally desired in order to reduce costs cannot be employed.
  • the silicon substrate which is to be textured is anodically etched using platinum electrodes in a mixture, for example, of one part by volume 50% hydrofluoric acid and one part by volume ethanol.
  • a nanoporous silicon with a highly active surface is produced.
  • the process is known in the field of micromechanics and is characterized by a very low throughput (time-consuming single-substrate process) and a high outlay on equipment.
  • a structure comprising, for example, circles or lines is exposed and developed on the substrate. Then, by way of example, a mixture of nitric acid, acetic acid and hydrofluoric acid is used to carry out isotropic etching into the silicon. In the process, conical holes are formed from the circles or V-shaped trenches are formed from the lines.
  • a photoresist After coating with a photoresist, a structure comprising, for example, circles or lines is exposed and developed on the substrate. Then, nitric acid, acetic acid and hydrofluoric acid is used to carry out isotropic etching into the silicon. In the process, conical holes are formed from the circles or V-shaped trenches are formed from the lines. The highly complex and expensive process is described, for example, in (U.S. Pat. No. 5,702,538).
  • an object of the present invention is to provide an inexpensive process which is easy to carry out for producing textured surfaces on multicrystalline, tricrystalline and monocrystalline silicon surfaces of solar cells or of silicon substrates which are used for photovoltaic purposes, which process does not have the drawbacks described above.
  • Another object of the present invention is to provide an agent for carrying out the process.
  • the object according to the invention is achieved by a novel etching mixture and a process in which this mixture is used.
  • the present invention relates to an etching mixture for producing a textured surface on multicrystalline, tricrystalline and monocrystalline silicon surfaces of solar cells or on silicon substrates, for photovoltaic purposes, comprising hydrofluoric acid and mineral acids selected from the group consisting of nitric acid, sulphuric acid and phosphoric acid.
  • the present invention relates in particular to an etching mixture comprising hydrofluoric acid, nitric acid and sulphuric acid and/or phosphoric acid.
  • Etching mixtures which comprise an additional oxidizing agent which suppresses the formation of nitrogen oxides and, if appropriate, a surface-active substance selected from the group consisting of the polyfluorinated amines and the sulphonic acids have proven particularly effective.
  • the scope of the present invention also encompasses corresponding etching mixtures which comprise an additional oxidizing agent selected from the group consisting of hydrogen peroxide, ammonium peroxydisulphate and perchloric acid.
  • the present object is achieved by etching mixtures comprising 1-30% HF, 5-30% nitric acid, 50 to 94% concentrated sulphuric acid or concentrated phosphoric acid or 50 to 94% of a mixture of concentrated sulphuric acid and concentrated phosphoric acid.
  • the object according to the invention is also achieved by a process for producing textured surfaces on multicrystalline, tricrystalline and monocrystalline silicon surfaces of solar cells or on silicon substrates for photovoltaic purposes, in which
  • etching mixture as characterized above is brought into contact with the entire surface at a suitable temperature by spraying, dipping, capillary coating or meniscus coating, resulting in incipient isotropic etching, and
  • a damage etch is carried out in addition to the texture etch. This is achieved by using an etching mixture which comprises 10-16% HF, 20-30% HNO 3 , 15-25% H 2 SO 4 , 14-20% H 3 PO 4 and 20-30% water.
  • a further process variant consists in an etching mixture which comprises 3-7% HF, 3-7% HNO 3 , 75-85% H 2 SO 4 and 5-15% water and which is rinsed off after a duration of action of 1-5 minutes being used for the rough-etching.
  • a known process for producing rough surfaces on silicon substrates in microelectronics is the so-called spin etch process, which is described in U.S. Pat. No. 4,903,717.
  • the silicon surface is roughened in order to achieve improved adhesion of the thin-etched microchips during bonding onto the carrier.
  • commercially available etching mixtures e.g. Spinetch®E, are used.
  • the gas bubbles ( 3 ) locally prevent the further etching of the silicon, since as a result of their growing onto and remaining on the surface of the silicon, they make it difficult for further etching mixture to be supplied to the silicon ( 2 ). This leads to inhomogeneities in the etching rate distributed over the substrate. This effect ultimately leads (FIG. 3) to roughening of the surface of the silicon ( 4 ).
  • the roughness of the surface can be influenced within broad limits by varying the external parameters (e.g. temperature, time, feed of media over the substrate) and primarily also by means of the composition of the etching mixture.
  • the shape and radii of the gas bubbles, but in particular their area of contact with the silicon, are decisive factors in achieving the desired roughening effect.
  • this object can be achieved by controlled variation and selection of the etching mixture components and the further etching parameters. It has proven particularly advantageous to use a high-viscosity mineral acid, such as for example phosphoric acid or sulphuric acid, as the basis of the etching mixture, since the viscosity significantly promotes the formation and stabilization of in particular extremely small spherical gas bubbles. Further tests have found that the number and properties of the gas bubbles can be advantageously influenced by the addition of surface-active substances which are stable in these etching mixtures, such as for example polyfluorinated amines or sulphonic acids.
  • surface-active substances which are stable in these etching mixtures, such as for example polyfluorinated amines or sulphonic acids.
  • the etching mixture may be applied to the silicon substrate by various methods to which the person skilled in the art is accustomed.
  • One very simple method is the dipping, preferably of a plurality of substrates simultaneously, into the etching mixture.
  • Spraying processes in continuous installations are also suitable.
  • the single-side coating of the substrate on only the front surface, in which the exact amount of material required for the etching is applied, is particularly favourable in terms of consumption of the material.
  • Advantageous processes in this connection are described, for example in U.S. Pat. No. 5,455,062 and DE 19600985.
  • the etching mixture is utilized until it is “exhausted” and is then rinsed off. This additionally ensures a high level of process uniformity, since fresh, unused etching solution is always fed to the substrate.
  • the composition of the etching mixture may be selected in such a way that, in addition to the desired roughening effect, a damage etch also takes place in parallel. This is highly advantageous in particular for multicrystalline, cast silicon. This process is not necessary for EFG silicon.
  • a positive side effect of the acidic rough-etching according to the invention is that, provided that correspondingly pure starting materials have been used, there is no cationic contamination of the substrate.
  • any contamination caused by metals (Fe, Ti, Ni, etc) which may be present on the substrate surface is advantageously converted into soluble compounds and removed when the acidic texture etching solution is rinsed off. Additional cleaning and rinsing steps as are required with the alkaline etching can therefore be dispensed with.
  • the high etching rate which can be achieved with the process according to the invention and is influenced in particular by the selection of the etching mixture used is particularly advantageous. It makes its presence felt in particular in considerably shorter process times compared to the alkaline etching.
  • Hydrofluoric acid has proven to be an essential, indispensable constituent of the active etching mixtures, even if it does not necessarily have to be used in high concentrations. Even 1% hydrofluoric acid in the etching mixture may be sufficient.
  • concentrations typically lie in the range from 1-30% HF, particularly advantageously in the range from 3 to 15% HF.
  • Nitric acid, hydrogen peroxide, perchloric acid or similar oxidizing agents or mixtures of these compounds may be contained in the etching mixture as oxidative component. With regard to the stability of the solution, it has proven particularly advantageous if the etching mixture comprises nitric acid in a concentration range of 5-30%.
  • a base material with a relatively high viscosity is particularly advantageous for the formation and fixing of gas bubbles.
  • the proportion of this base component which has no direct effect on the actual chemical etching mechanism, is typically 50-94%, based on the total mixture.
  • concentrated sulphuric acid which, in addition to the required viscosity, increases the etching rate and binds the water formed in the etching process, advantageously into the mixture.
  • etching mixtures which contain 3-7% HF, 3-7% HNO 3 , 75-85% H 2 SO 4 and 5-15% water. Durations of action of between 1 and 5 minutes have led to good results.
  • a typical rough etch for producing a roughness with texture depths and widths of approximately 1-3 ⁇ m has the following composition: 5% HF, 5% HNO 3 , 80% H 2 SO 4 , 10% H 2 O. With a duration of action of approx. 2 min and processing at room temperature, after the silicon substrate has been dipped into the etching mixture described the surface structure shown in FIG. 4 is obtained.
  • the steep flanks of the etching craters produced by the etching can be seen clearly in FIG. 5. These steep flanks are highly advantageous with a view to increasing the efficiency of a solar cell.
  • the integral etching rate during this etching as laid down in DIN 50453 part 1 is approx. 2 ⁇ m/min at 20° C.
  • a damage etch mixture with a roughening action which leads to good results has, for example, the following composition: 13% HF, 25% HNO 3 , 20% H 2 SO 4 , 17% H 3 PO 4 , 25% H 2 O.
  • the process according to the invention gives good etching results if the etching operation is carried out at a temperature of between 15 and 30° C., in particular at room temperature, and if a duration of action of between 2 and 30 minutes is selected.
  • nitrous gases formed during the etching are undesirable on account of their toxicity. Therefore, the use of a second oxidizing component has proven advantageous in order to suppress the formation of nitrous gases.
  • Suitable additives are, for example, hydrogen peroxide, ammonium peroxydisulphate, inter alia, as mentioned in U.S. Pat. No. 3,953,263.
  • the addition of such components has the advantageous effect of suppressing the formation of nitrous gases and instead, however, forming oxygen bubbles, which have the same effect during the etching operation.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
US10/168,797 1999-12-22 2000-12-07 Method for raw etching silicon solar cells Abandoned US20030119332A1 (en)

Priority Applications (1)

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US12/906,769 US8461057B2 (en) 1999-12-22 2010-10-18 Process for the rough-etching of silicon solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19962136A DE19962136A1 (de) 1999-12-22 1999-12-22 Verfahren zur Rauhätzung von Siliziumsolarzellen
EP19962136.5 1999-12-22

Related Parent Applications (1)

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EP (1) EP1240673B1 (de)
CN (1) CN1173413C (de)
AT (1) ATE478439T1 (de)
AU (1) AU780184B2 (de)
CA (1) CA2395265A1 (de)
DE (2) DE19962136A1 (de)
ES (1) ES2350760T3 (de)
WO (1) WO2001047032A1 (de)

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US20090061740A1 (en) * 2007-08-27 2009-03-05 Andreas Menzel Method for manufacturing silicone wafers
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US20100055398A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-Sided Textured Sheet Wafer
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WO2013180221A1 (ja) * 2012-05-31 2013-12-05 日本化成株式会社 太陽電池用シリコンウエハー及びその製造方法
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