US3442719A - Method of growing a crystal or crystalline layer by means of a direct current arc discharge - Google Patents

Method of growing a crystal or crystalline layer by means of a direct current arc discharge Download PDF

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US3442719A
US3442719A US731826A US3442719DA US3442719A US 3442719 A US3442719 A US 3442719A US 731826 A US731826 A US 731826A US 3442719D A US3442719D A US 3442719DA US 3442719 A US3442719 A US 3442719A
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crystal
electrode
oxide
growing
direct current
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US731826A
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English (en)
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John R Drabble
Anthony William Palmer
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National Research Development Corp UK
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Nat Res Dev
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/005—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/24—Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Definitions

  • This invention is concerned with a method of growing a crystal and is a continuation-in-part of our application Ser. No. 492,728, filed Oct. 4, 1965,
  • said crystal in a method of growing a crystal of a given material including said element, said crystal forms at least part of a first electrode of a given polarity of a direct current arc discharge which is established between said first electrode and a consumable second electrode having a polarity opposite to that of said first electrode and being formed at least in part of the said material.
  • discharge in the present specification should be understood to include both continuous and intermittent discharges, and spark discharges; and the term crystal should be understood to include crystals and crystalline layers.
  • the current through the arc discharge is preferably varied to control the rate of deposition of material on the first electrode.
  • the said first electrode is preferably provided initially with a horizontal surface on which the crystal is deposited, said horizontal surface being disposed vertically beneath or vertically above the said second electrode.
  • the second electrode is formed wholly or in part of said material and the arc discharge is established in a gaseous atmosphere the composition of which is controlled whereby combination of said element with a constituent of said atmosphere takes place and a crystal of a predetermined compound including said element is grown at the first electrode.
  • the rate of growth of the crystal may be increased I automatically as growth thereof proceeds.
  • the first electrode may be formed wholly of the element or compound to be'deposited.
  • the first electrode may be formed of a material which is a seed for the said crystal.
  • the crystallisation of the material may be carried out in an atmosphere the partial pressure of the constituents of which may be controlled.
  • said first electrode is a negative electrode, although more usually it is a positive electrode.
  • the material may be (or contain) cerium oxide or lanthanum oxide.
  • FIGURE 1 shows schematically an. apparatus by means of which, using the method according to the invention, single crystals of nickel oxide (melting point 2050 C. approximately) may be grown.
  • FIGURE 2 shows a modification of part of the ap paratus for growing crystals by the method of the present invention.
  • a positive electrode 10 and a negative electrode 11 together constitute a direct current arc discharge apparatus (the rest of which is not shown), the positive electrode 10 being disposed vertically beneath the negative electrode 11.
  • the negative electrode 11 is consumable and is in this example formed by a nickel oxide rod, produced by sintering nickel oxide powder.
  • the positive electrode 10 is formed of the material which is to be deposited, namely nickel oxide, but the electrode 10' may alternatively be formed of conventional electrode material, such as carbon, capped with a material which may or may not interact with the material to be deposited and which may, in addition, be a seed for the crystallisation of said material.
  • the arc 12 is established in the conventional manner If, however, the electrical conductivity of the electrodes 10 and 11 is not sufficiently high at normal temperatures to provide a sufficiently electrically conductive path, it is necessary to provide such a path before establishing the arc. For nickel oxide, and other materials whose electrical conductivity increases with increasing temperature, the temperature of the electrodes 10, 11 may be raised by external heating means (not shown) until their electrical conductivity is sufficient to permit an arc to be struck.
  • One such external heating means which has been used successfully employes a hollow cylindrical heater which surrounds the electrodes 10 and 11 and which comprises nickel chrome wire woilind on a silica-former which is maintained at a temperature of approximately 1000 C.
  • an electrically conductive path may be provided by means other than heating.
  • a metallic path for the current has been provided by reducing the surface of the electrodes 10, 11 to nickel.
  • the nickel oxide As the nickel oxide is deposited on the surface 13 of the positive electrode 10 it crystallises, and in time a crystal 14 of nickel oxide grows on the positive electrode 10.
  • the electrodes 10, 11 are 1 cm. in diameter and an arc gap of 0.5 cm. is used.
  • a current of 12 amps a nickel oxide crystal 14 of 1.5 cm. diameter can be grown in air at atmospheric pressure at a rate of 1.5 cm. per hour. Growth can be continued in this way until the crystal 14 has attained any desired length.
  • the diameter of the crystal 14 can be controlled within wide limits by varying the current passing through the arc 12. For example, with the arrangement of the example illustrated, a current of 3 amps gives a diameter of crystal 14 of about 4 mm. and a current of 20 amps gives a diameter of crystal 14 of about 2 cm.
  • the continued presence of the are 12 maintains a zone 15 of liquid nickel oxide above the crystal 14 being formed. Crystallisation of the nickel oxide takes place gradually behind the liquid zone 15, and the heating effect of the current passing through the crystal 14 maintains crystal 14 at a high temperature. By maintaining the whole of the crystal 14 at a high temperature in this way, thermally induced strain in the crystal 14, which may otherwise arise as a result of the different rates of cooling at different parts' of the-crystal 14, is relieved.
  • the rate of cooling of the nickel oxide crystal 14 can be controlled according to the invention, since it is dependent on the current passed through the crystal 1.4.
  • the rate of deposition of material can be controlled according to the invention within fine limits, since it is dependent on, inter alia, the current passed through the are 12, affording, therefore, precise control of crystal growth.
  • composition and properties of the resulting crystal 14 can be affected by introducing predetermined amounts of impurity material in the negative electrode, enabling a. doped crystal 14 to be grown.
  • the room temperature value of the electrical con ductivity of the nickel oxide crystal 14 can be controlled by the addition of a suitable amount of lithium oxide to the negative electrode 11.
  • the electrodes 10, 11 are mounted (by means not shown, in the interests of clarity) for fine relative movement, so that the stability of the are 12. may be controlled.
  • the voltage difference across the are 12, which varies with the arc gap for a particular current may be used to operate a servomechanism (not shown) which controls the gap between the electrodes 10, 11 in such a way as to maintain this voltage at a constant value to better than one part in five hundred.
  • a servomechanism provides automaticelectrode feed under constant arc gap conditions.
  • the method according to the invention is not confined to this application. Th s the method may also be used for coating a body with a crystalline layer of material.
  • the body to be coated would be used as the positive electrode 10, the position of the body with respect to the negative electrode 11 being adjusted, and the time of exposure to the are 12 being controlled, until a crystalline layer of the desired thickness is formed.
  • the exposure time of the" body to be coated to the are 12 could, for example, be controlled by moving the body continuously relative to the are 12, the rate of movement determining the exposure time.
  • the atmosphere in which the arc 12 is struck may comprise a gas other than air, and the pressure of such gas may be other than atmospheric.
  • the partial pressures of the constituents of the medium in which the are 12 is struck may, furthermore, be controlled.
  • a crystalline oxide may be de limi ed on he PDSiti t electrode by the inclusion of oxygen in the said atmosphere, while a nitride deposit may be formed when the arc 12 is struck in an atmosphere of nitrogen.
  • a nickel oxide crystal has, for example, been grown using electrodes 10, 11 of pure nickel, the are 12 being struck in air at atmospheric pressure.
  • Titanium oxide (melting point 1,800 C. approximately) using electrodes of sintered titanium oxide in an atmosphere of argon, for example, with a current of 5 amps, producing a crystal of diameter approximately 5 mm.
  • Vanadium oxide (melting point 1,920 C. approximately) using electrodes of sintered vanadium oxide in an atmosphere of argon, for example with a current of 8.5 amps, producing a crystal of diameter approximately 6 mm.
  • Nickel ferrite (melting point 1,600 C. approximately) using electrodes of sintered nickel ferrite in air at atmospheric pressure, for example with a current of 12 amps, producing a crystal with a diameter of approxi mately 1 cm.
  • the method according to the invention is particularly suitable for the growth of crystals of refractory materials, that is to say, materials having melting points in excess of 900 C.
  • the following other materials could possibly be grown by this method: aluminium oxide; barium titanate; calcium tungstate; chromium oxide; cobalt ferrite; copper; germanium; magnesium oxide; manganese oxide; silicon; silicon carbide.
  • certain materials may be grown by deposition through an arc discharge onto the negative electrode, the positive electrode being formed wholly or in part of the said material.
  • examples of such materials include cerium oxide and lanthanum oxide.
  • diagrammati cally an arrangement by means of which e.g. cerium oxide crystals may be grown by the method of the present vention.
  • a positive electrode 10' and a negative electrode 11 are connected across a direct current source (not shown) and a direct curernt arc discharge 12 is established between said electrodes.
  • the negative electrode 11 is dis posed vertically beneath the positive electrode 10', the positive electrode 10 being consumable and formed wholly or in part of cerium oxide.
  • cerium oxide is deposited through the discharge in crystalline form on a horizontal surface 13' provided on the negative electrode 11'. As the process continues, a crystal 14 grows on the negative electrode 11, the positive electrode 10 being eroded.
  • the negative electrode 11 is conveniently also formed of the material to be deposited, in this case cerium oxide.
  • the negative electrode 11 may be formed of conventional electrode material, such as carbon, capped with a suitable seed material for the crystallisation of the crystalline material (in this case cerium oxide) on the surface 13'.
  • Indications are that crystals of relatively better quality but of smaller size, may be grown by a modification of the apparatus described above with reference to FIG- URE 3 in which the negative electrode 11 is disposed vertically above the positive electrode 10'.
  • the crystalline material can, in many cases be maintained at a high temperature (in the region of its melting point) during growth is advantageous as it is favourable to accurate and uniform doping, that is, controlled distribution of selected impurities in the material,
  • a method of growing a single crystal of a given material comprising establishing a direct current are dis charge between a consumable first electrode of either positive or negative polarity and a second electrode of opposite polarity, said single crystal forming part of said second electrode, said first electrode being formed at least in part of said material, consuming at least a portion of said first electrode in operation to directly transfer material to be deposited onto the second electrode for subsequent crystallizaiton thereon as asingletcriystal, and said are discharge being the sole means of maintaining a zone of liquid material on the crystal which is being formed,
  • the said second electrode is formed of a material which interacts chemically with the material to be deposited 10.
  • the said second electrode is formed of a material which does not interact chemically with the material to be deposited,
  • crys tallisation of the material is carried out in an atmosphere the partial pressure of the constituents of which is controlled.
  • a method as claimed in claim 13 wherein the material of the crystal is a refractory material, that is to say, material having a melting point of at least 900 C.
  • a method as claimed in claim 15 wherein said ma' terial is lanthanum oxide References Cited UNITED STATES PATENTS 2,965,456 12/1960 Clark 23-273 2,970,895 2/1961 Clark m- 23-273 3,232,745 2/1966 Rummez et a1.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Battery Electrode And Active Subsutance (AREA)
US731826A 1964-10-08 1968-05-24 Method of growing a crystal or crystalline layer by means of a direct current arc discharge Expired - Lifetime US3442719A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB41175/64A GB1076046A (en) 1964-10-08 1964-10-08 A method of growing a crystal or a crystalline layer
GB24721/67A GB1171005A (en) 1964-10-08 1967-05-26 A Method of Growing a Crystal or Cristalline Layer.

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US3442719A true US3442719A (en) 1969-05-06

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US731826A Expired - Lifetime US3442719A (en) 1964-10-08 1968-05-24 Method of growing a crystal or crystalline layer by means of a direct current arc discharge

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US (1) US3442719A (fr)
DE (1) DE1769401A1 (fr)
FR (1) FR94448E (fr)
GB (1) GB1171005A (fr)
NL (1) NL6807351A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030963A (en) * 1976-01-27 1977-06-21 The United States Of America As Represented By The United States Energy Research And Development Administration Arc-melting preparation of single crystal LaB6 cathodes

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2965456A (en) * 1956-12-31 1960-12-20 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
US2970895A (en) * 1956-12-31 1961-02-07 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
US3232745A (en) * 1960-12-05 1966-02-01 Siemens Ag Producing rod-shaped semiconductor crystals
US3234051A (en) * 1962-08-07 1966-02-08 Union Carbide Corp Use of two magnetic fields in a low pressure arc system for growing crystals
US3314769A (en) * 1963-05-08 1967-04-18 Union Carbide Corp Arc process and apparatus for growing crystals
US3325392A (en) * 1961-11-29 1967-06-13 Siemens Ag Method of producing monocrystalline layers of silicon on monocrystalline substrates

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2965456A (en) * 1956-12-31 1960-12-20 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
US2970895A (en) * 1956-12-31 1961-02-07 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
US3232745A (en) * 1960-12-05 1966-02-01 Siemens Ag Producing rod-shaped semiconductor crystals
US3325392A (en) * 1961-11-29 1967-06-13 Siemens Ag Method of producing monocrystalline layers of silicon on monocrystalline substrates
US3234051A (en) * 1962-08-07 1966-02-08 Union Carbide Corp Use of two magnetic fields in a low pressure arc system for growing crystals
US3314769A (en) * 1963-05-08 1967-04-18 Union Carbide Corp Arc process and apparatus for growing crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030963A (en) * 1976-01-27 1977-06-21 The United States Of America As Represented By The United States Energy Research And Development Administration Arc-melting preparation of single crystal LaB6 cathodes

Also Published As

Publication number Publication date
FR94448E (fr) 1969-08-14
GB1171005A (en) 1969-11-19
NL6807351A (fr) 1968-11-27
DE1769401A1 (de) 1971-07-01

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