US3923468A - Method for crucible-free zone melting of semiconductor crystal rods - Google Patents

Method for crucible-free zone melting of semiconductor crystal rods Download PDF

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Publication number
US3923468A
US3923468A US525641A US52564174A US3923468A US 3923468 A US3923468 A US 3923468A US 525641 A US525641 A US 525641A US 52564174 A US52564174 A US 52564174A US 3923468 A US3923468 A US 3923468A
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US
United States
Prior art keywords
rod
seed crystal
melt
juncture
zone
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US525641A
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English (en)
Inventor
Wolfgang Keller
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Siemens AG
Siemens Corp
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Siemens Corp
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Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to US05/580,548 priority Critical patent/US3961906A/en
Priority to US05/580,585 priority patent/US3988197A/en
Application granted granted Critical
Publication of US3923468A publication Critical patent/US3923468A/en
Priority to US05/637,986 priority patent/US3989468A/en
Priority to US05/638,302 priority patent/US3996011A/en
Priority to US05/638,261 priority patent/US3996096A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Definitions

  • 23/273 2 uniform support is preferably provided by an axially 3,189, 15 6/1965 Em i 2 Z movable funnel-shaped casing which is attached to the 3,210,165 10/1965 Van Rum 23/273 Z seed crystal holding member and which when moved 3135339 2/1966 Brunet 23/273 Z into its operating position, is filled with a self-adjusting 331323132 51138 liifir'jiiii... 1111193531 5? oscillate" or vibration dampening means Such as 3,781,209 12/1973 Reuschel 23/301 SP when metal' metal spherods quartz pamcles Sam OTHER PUBLICATIONS Review of Scientific Instru., Vol. 31, No. 12, Dec.
  • the invention relates to processing semiconductor crystal rods and somewhat more particularly to a' method and apparatus for crucible-free zone melt processing of a semiconductor crystal rod whereby formation of dislocations and irregularities within the process crystal are avoided.
  • Prior Art Semiconductor crystals are generally produced by a crucible-free zone melt process whereby a monocrystalline seed or nucleation crystal having a relatively small diameter is melt-connected, as with the aid of an induction heating coil, to an end of a relatively large diameter polycrystalline semiconductor member and a melt zone is generated at the junction of the seed crystal and the polycrystalline member and passed one or more times along the length of the polycrystalline member.
  • the melt zone is moved by providing relative movement between the polycrystalline member and a heat source, such as an induction heating coil, which may be the same one used to melt-connect the seed crystal with the polycrystalline member or be different therefrom. In this manner, a polycrystalline member is purified of any foreign constituencies and simultaneously converted into a monocrystalline member.
  • the semiconductor material be as free as possible from dislocations and other irregularities which materially interfere with the electrical properties of the semiconductor components produced therefrom. Further, the presence of dislocations, etc. within the semiconductor material decreases the life of minority carriers within such semiconductor materials.
  • German Auslegeschrift 1,079,593 (which generally corresponds to British Letters Patent 889,160) suggests that dislocations in rod-shaped semiconductor members may be decreased at the melt-connected juncture of the seed crystal and such semiconductor members bydecreasing the cross-section of the semiconductor member at the direct proximity of such melt-connected juncture prior to the last pass of the melt zone through the semiconductor member. Dislocations which may be present in the seed crystal are thus given a'chance to heal in the thus-produced thin connecting piece or bridge between the seed crystal andthe semiconductor member.
  • German letters Pat. No. 1,128,413 (which generally corresponds to US. Pat. No. 3,175,891) discloses that substantially dislocation-free rod-shaped silicon monocrystals may be produced, for example, byfcontrolling speed of the melt zone is steadily decreased from this constriction point until the full. cross-section of the rod is attained. Thereafter, the melt zone is moved through the rod at a speed less thanabout 7 mm/min.
  • German Offenlegungsschrift 1,519,901 a means of supporting the ends of a crystal rod at the juncture thereof with a seed crystal which comprises a finger-like support means that is positioned on the upper edge of a casing and which is axially movable and encloses the mounting for the seed crystal.
  • this arrangement does not completely obviate vibrations or oscillations during the growth of very thick (i.e., having a diameter larger than 30 mm) dislocation-free semiconductor monocrystalline rods since the finger-like supports do not uniformly touch the overall round cone portion of such rod. Due to this instability, increased oscillations may be produced opposing the supporting effect desired or may even eliminate any beneficial supporting action.
  • the invention provides an improved zone-melt process and apparatus therefor which substantially eliminates or prevents the development of oscillations at the juncture of a seed crystal and a semiconductor rod during the passage of, for example, a last pass of the melt zone through the semiconductor rod.
  • movable funnel-shaped support means is coupled with the rate or speed of travel of one or more passages of a crucible-free zone melt through the rod.
  • This reference suggests that all passages of the melt zone start in the seed crystal and that the travel speed of the melt zone stricted by a temporary relative movement of the rod ends 'at a speed greater than 25 mm/min. while the a mountingfor a seed crystal so that upon activation of the support casing, it moves to an upper or support position and completely and uniformly encases the cone area of the rod.
  • the support means may include a funnel-shaped casing movable to the support position and a means for filling the casing with a vibration or oscillation dampening means which provides a uniform contact with the cone area of the rod whereby all points about the cone area circumference are completely supported by such dampening means.
  • dampening means may comprise granular silicon, granular quartz or sand.
  • dampening means may comprise a liquified metal, preferably molten lead or indium, which becomes rigid within the funnel-shaped casing to provide a desired support.
  • the vibration or oscillation dampening means may comprise metal spheroids or the like in an extremely dense distribution.
  • the dampening means may comprise inserts of an extremely pure metal, for example, aluminum, attached to the upper periphery of the funnel-shaped casing which contact the cone area of the rod upon upward movement of the casing and melt with the rod material to form a eutectic mixture between the metal and the rod material, for example, silicon, which then solidifies and provides a solid connection between the casing and the rod.
  • an extremely pure metal for example, aluminum
  • the rod material for example, silicon
  • FIG. 1 is a partial cross-sectional elevated view of a lower rod mounting arrangement for use in a cruciblefree zone melt process which schematically illustrates an embodiment of the invention in a nonoperative position;
  • FIG. 2 is a somewhat similar view to that of FIG. 1 and schematically illustrates an embodiment of the invention in an operative position;
  • FIG. 3 is a partial cross-sectional elevated view of a lower rod mounting arrangement for use in a cruciblefree zone melt process, which schematically illustrates another embodiment of the invention in an operative position.
  • the invention provides an improved method and apparatus for producing dislocation-free monocrystalline semiconductor rods.
  • a polycrystalline semiconductor rod such as primarily composed of silicon, is melt-connected to a seed crystal and positioned within a crucible-free zone melt environment.
  • a melt zone is generated at the juncture between the rod and the seed crystal and controllably moved through the rod to a select point thereon, preferably at least about cm above the cone-shaped area of the rod and then the cone-shaped lower area of the rod is uniformly supported so as to prevent any oscillations and the like from forming at the juncture of the rod in the seed crystal.
  • the melt zone is again controllably moved through the remainder of the rod. In this manner, oscillations at the juncture between the semiconductor rod and the seed crystal are avoided so that dislocations and other irregularities cannot develop within the processed rod.
  • a funnel-shaped casing is appropriately coupled to a seed crystal mounting means so as to be axially and rotatably movable with said mounting means and axially movable relative to such mounting means.
  • the casing uniformly encloses the conical area of the crystalline rod being processed.
  • Self-adjusting vibration dampening means such as molten metal, particulated quartz, sand, silicon, etc. is preferably provided within the casingto positively provide anti-oscillation support and uniformly contact any irregular points about the rod circumference.
  • dampening means such as grain-like silicon, quartz, sand and/or metal particles.
  • dampening means which may also include liquified or molten metal, is essentially self-adjusting to any irregularities in the rod circumference and provides a uniform and complete support for the enclosed area thereof and prevents oscillations or the like so that discloation-free crystals are readily and reliably produced by following the principles of the invention.
  • the dampening means comprises rigid inserts composed of a very pure metal having a relatively low melting point, such as aluminum, which are positioned at the upper periphery of the funnel-shaped casing so that upon the upward movement of the casing, the inserts contact adjacent points of the rod and the ends of the inserts melt to form a eutectic mixture with the rod material and then solidify to provide positive anti-oscillation support.
  • the instant invention including the above preferred embodiments thereof, provides a uniform support for any and all uneven points or the like at the rod circumference thereby avoiding the drawbacks noted earlier and providing positive and complete support for the growing monocrystalline rods.
  • the uniform support for the bottom of the rod being processed is provided when the melt zone has traveled through the rod to a select point thereon, preferably at least about 10 cm above the highest reach of the funnel-shaped support means.
  • a preferred embodiment of an apparatus constructed and operable in accordance with the principles of the invention comprises two vertically opposing and approximately coaxially aligned rod mounting members in a crucible-free zone melt apparatus which may typically include an induction heating coil and an enclosed chamber along with means for supplying energy to the coil and for supplying a select atmosphere to the chamber.
  • At least one of the rod mounting members is provided with a seed crystal which is melt-connected to a rod tobe treated (i.e., a melt zone is generated at adjacent surfaces of the seed crystal and the rod and the molten surfaces are brought together to form a unified molten mass which is allowed to solidify and form a solid juncture.
  • the rod mounting member having the seed crystal therein is also coupled with a funnelshaped hollow casing which is axially and rotatably movable with the mounting member and is independently axially movable relative to the mounting member.
  • This funnel-shaped casing is axially movable a distance sufficient to encompass the cone area of a rod above a seed crystal and may be associated with a means for providing a self-adjusting vibration or oscillation dampening means to the casing.
  • the self-adjusting oscillation dampening means is selected from the group consisting of particulate silicon, quartz, sand, metal (metal spheroids), liquified and re-solidifiable metal having a relatively low melting point, i.e., below the melting point of the rod being treated, such as aluminum, lead or indium, which may be provided in initially molten form to simply fill any space between the hollow funnel-shaped casing or be provided as solid inserts, the ends of which melt upon contact with the hot cone area of the rod being processed so as to form a eutectic mixture and upon solidification form a solid support for the rod.
  • the flowable dampening means may '5 be added to the funnel-shaped casing with the aid of an appropriate fillingdevice, such as a conduit and the non-flowable dampening means may be added to the funnel-shaped casing duringassembly thereof.
  • a monocrystallineseed 2 is mounted in a mounting member 3 within a cruciblefree zone melt apparatus and/or environment ZM.
  • the seed crystal 2 is melt-connected with the lower end of a semiconductor crystalline rod 4 so as to form a junc f ture 2a therebetween.
  • the rod 4 and the s'e ed crystal 2 may, for example, becomposed of silicon.
  • a melt zone 6 is generated, as with the aid of induction heating coil 5, and controllably moved in an axial direction through the rod 4 from the juncture 2a upward to a select point P thereon. Movement of the melt zone is achieved by relative movement between the rod 4 and the heat coil 5.
  • the funnel casing 7 is supported on a stud 8 which is attached to a pin 9 arranged within the mounting member 3 and which is axially movable.
  • the stud 8 may be positioned within a guide slot 10 within the mounting member 3.
  • Reference numeral 11 designates a portion of the bottom wall of an enclosed chamber typically utilized in a crucible-free zone melt apparatus and various seal means, drive means, atmosphere control means, energy supply means, etc. have been omitted from the drawings in order to simplify the understanding of the invention and to provide a better overall view of the essential features of the invention.
  • FIG. 1 illustrates the relative position of the elements before the rod end 4a is provided with support.
  • the end 4a at this stage has grown as a monocrystal without dislocations at the relatively thin connecting or bridging piece 12 during a so-called bottle-neck-shaped constriction or necking process whereby a melt connection was formed between the seed crystal and the rod 4 and the melt zone moved therefrom through the rod one or more times. Since during such a process, both the rod 4 and the seed crystal 2 are rotated about their respective axes, there is a danger that the end 4a of the rod 4 which grows at the bottle-neck-shaped constriction 12 may begin to oscillate or vibrate when the melt zone 6 6 moves sufficiently from the juncture 22 between the seed crystal 2*a'ndil1the rod 4. 4
  • the funnel-shaped casing 7 is move'd'upwardly with the aid of the pin 9 so as'to encase the cone area 4a of the rod 4 positioned above the seed crystal 2, such'asjshown in FIGSLZ 'and 3.
  • a self-adjusting dampening or stabi- Iizing means 13 is provided between theinterior of the funnel-shaped casing 7 and'theperiphery of the lower end 4a 'of the rod 4.
  • FIG. 2 illustrates a funnel-shaped casing 7 being filled with the dampening means 13, such as particulate quartz or sand, via a filling conduit 14.
  • the dampening means 13 such as particulate quartz or sand
  • Granular silicon, metal spheroids, sand or a compatible (i.e., substantially inert and non-contaminating) metal, such as molten lead or indium, which solidifies within the casing 7 upon coming in contact with the relatively hot lower rod portion may also be used in place of the particulate quartz or sand.
  • the rod 4 can no longer oscillate on the bottle-neck-shaped constriction.
  • the lower rod portion 4a follows the seed crystal and the narrow constriction or bridging piece 12 is already sufficiently cold at this time so that no dislocations or the like can form.
  • the remaining reference numerals shown in FIG. 2 are identical to those utilized in FIG. 1 and refer to identical elements discussed in conjuction with FIG. 1.
  • FIG. 3 illustrates another embodiment of the invention for supporting a growing monocrystal so as to avoid formation of dislocations or other irregularities therein.
  • inserts 15 are attached via mountings 16 along the upper periphery of a funnelshaped casing 7 so that such inserts gently touch the periphery of the cone area 4a when the casing is moved to its upward position.
  • the inserts 15 are composed of a compatible, relatively low melting, extremely pure metal, for example, aluminum, which melts upon contact with the still-hot rod material and alloys with or forms a eutectic mixture therewith.
  • a method of crucible-free zone melt processing of a semiconductor crystal rod comprising: 7
  • a semiconductor crystal rod within a crucible-free zone melt environment with a seed crystal attached to a lower end thereof; generating a melt zone at the juncture of said seed crystal and said rod and controllably moving said melt zone away from said juncture through said rod to.
  • a select point thereon uniformly supporting said lower end of said rod so as to prevent oscillations at the juncture of said seed crystal and said rod; said uniform supporting of said lower end of the rod being accomplished by axially upwardly moving a hollow funnel-shaped support means from a position below said juncture between the between the seed crystal and the rod to a position surrounding the lower end of said rod; said support means comprising a funnel-shaped casing filled with a granular material selected from the class consisting of silicon, quartz, sand and metal spheroids, said material being self-adjusting to contact all points about the circumference of the lower end of said rod so as to dampen any oscillation between the rod and the seed crystal; and controllably moving said melt zone from said select point through the remaining portion of said rod. 2. A method as defined in claim 1 wherein said select point is at least about 10 cm above the supported lower end of said rod. r

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Engine Equipment That Uses Special Cycles (AREA)
US525641A 1973-11-22 1974-11-20 Method for crucible-free zone melting of semiconductor crystal rods Expired - Lifetime US3923468A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US05/580,548 US3961906A (en) 1973-11-22 1975-05-27 Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
US05/580,585 US3988197A (en) 1973-11-22 1975-05-27 Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US05/637,986 US3989468A (en) 1973-11-22 1975-12-05 Apparatus for crucible-free zone melting of semiconductor crystal rods
US05/638,302 US3996011A (en) 1973-11-22 1975-12-08 Apparatus for crucible-free zone melting of semiconductor crystal rods
US05/638,261 US3996096A (en) 1973-11-22 1975-12-08 Method for crucible-free zone melting of semiconductor crystal rods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2358300A DE2358300C3 (de) 1973-11-22 1973-11-22 Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen

Related Child Applications (5)

Application Number Title Priority Date Filing Date
US05/580,548 Division US3961906A (en) 1973-11-22 1975-05-27 Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
US05/580,585 Division US3988197A (en) 1973-11-22 1975-05-27 Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US05/637,986 Division US3989468A (en) 1973-11-22 1975-12-05 Apparatus for crucible-free zone melting of semiconductor crystal rods
US05/638,302 Division US3996011A (en) 1973-11-22 1975-12-08 Apparatus for crucible-free zone melting of semiconductor crystal rods
US05/638,261 Division US3996096A (en) 1973-11-22 1975-12-08 Method for crucible-free zone melting of semiconductor crystal rods

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US3923468A true US3923468A (en) 1975-12-02

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US525641A Expired - Lifetime US3923468A (en) 1973-11-22 1974-11-20 Method for crucible-free zone melting of semiconductor crystal rods
US05/778,587 Expired - Lifetime USRE30863E (en) 1973-11-22 1977-03-17 Method for crucible-free zone meeting of semiconductor crystal rods

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US05/778,587 Expired - Lifetime USRE30863E (en) 1973-11-22 1977-03-17 Method for crucible-free zone meeting of semiconductor crystal rods

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US (2) US3923468A (fr)
JP (1) JPS5337803B2 (fr)
BE (1) BE816506A (fr)
CA (1) CA1053545A (fr)
DE (1) DE2358300C3 (fr)
IT (1) IT1025571B (fr)
PL (1) PL95739B1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045183A (en) * 1974-11-21 1977-08-30 Siemens Aktiengesellschaft Support device for use in a crucible-free floating zone melting apparatus
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods
US4060392A (en) * 1975-07-01 1977-11-29 Wacker-Chemitronic Gesellshaft Fur Elektronik Grundstoffe Mbh Device for the support of a crystalline rod
US4140571A (en) * 1976-11-16 1979-02-20 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Crucible-free zone refining of semiconductor material including annular support member
US5948164A (en) * 1997-09-02 1999-09-07 Shin Etsu Handotai Co., Ltd. Seed crystal holder

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017004008B4 (de) 2016-08-10 2021-08-26 Sumco Corporation Einkristall-Herstellungsverfahren und Vorrichtung
CN112429282B (zh) * 2020-11-10 2022-04-12 常州嘉业智能装备科技有限公司 一种用于多次灌装的漏斗

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989378A (en) * 1956-10-16 1961-06-20 Int Standard Electric Corp Producing silicon of high purity
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
US3159459A (en) * 1958-02-19 1964-12-01 Siemens Ag Method for producing semiconductor crystals
US3159408A (en) * 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3189415A (en) * 1958-07-30 1965-06-15 Siemens Ag Device for crucible-free zone melting
US3210165A (en) * 1961-01-13 1965-10-05 Philips Corp Zone-melting treatment of semiconductive materials
US3235339A (en) * 1961-12-22 1966-02-15 Philips Corp Device for floating zone melting
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
US3498846A (en) * 1967-03-03 1970-03-03 Siemens Ag Method of growing a rod-shaped monocrystal of semiconductor material by crucible-free floating zone melting
US3781209A (en) * 1970-12-02 1973-12-25 Siemens Ag Method of producing homogeneous rods of semiconductor material

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB848382A (en) * 1957-11-28 1960-09-14 Siemens Ag Improvements in or relating to the production of mono-crystalline bodies
US3179593A (en) * 1960-09-28 1965-04-20 Siemens Ag Method for producing monocrystalline semiconductor material
DE1519901A1 (de) * 1966-09-23 1970-02-12 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989378A (en) * 1956-10-16 1961-06-20 Int Standard Electric Corp Producing silicon of high purity
US3159459A (en) * 1958-02-19 1964-12-01 Siemens Ag Method for producing semiconductor crystals
US3189415A (en) * 1958-07-30 1965-06-15 Siemens Ag Device for crucible-free zone melting
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
US3210165A (en) * 1961-01-13 1965-10-05 Philips Corp Zone-melting treatment of semiconductive materials
US3159408A (en) * 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3235339A (en) * 1961-12-22 1966-02-15 Philips Corp Device for floating zone melting
US3498846A (en) * 1967-03-03 1970-03-03 Siemens Ag Method of growing a rod-shaped monocrystal of semiconductor material by crucible-free floating zone melting
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
US3781209A (en) * 1970-12-02 1973-12-25 Siemens Ag Method of producing homogeneous rods of semiconductor material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods
US4045183A (en) * 1974-11-21 1977-08-30 Siemens Aktiengesellschaft Support device for use in a crucible-free floating zone melting apparatus
US4060392A (en) * 1975-07-01 1977-11-29 Wacker-Chemitronic Gesellshaft Fur Elektronik Grundstoffe Mbh Device for the support of a crystalline rod
US4140571A (en) * 1976-11-16 1979-02-20 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Crucible-free zone refining of semiconductor material including annular support member
US5948164A (en) * 1997-09-02 1999-09-07 Shin Etsu Handotai Co., Ltd. Seed crystal holder

Also Published As

Publication number Publication date
JPS5084171A (fr) 1975-07-07
JPS5337803B2 (fr) 1978-10-12
CA1053545A (fr) 1979-05-01
DE2358300C3 (de) 1978-07-20
IT1025571B (it) 1978-08-30
PL95739B1 (pl) 1977-11-30
DE2358300B2 (de) 1977-12-01
USRE30863E (en) 1982-02-09
BE816506A (fr) 1974-10-16
DE2358300A1 (de) 1975-06-05

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