US5057452A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device Download PDF

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Publication number
US5057452A
US5057452A US07/650,520 US65052091A US5057452A US 5057452 A US5057452 A US 5057452A US 65052091 A US65052091 A US 65052091A US 5057452 A US5057452 A US 5057452A
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US
United States
Prior art keywords
layer
silicon oxide
oxide layer
silicon
polycrystalline
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Expired - Fee Related
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US07/650,520
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English (en)
Inventor
Matthias J. J. Theunissen
Johanna M. L. Mulder
Jan Haisma
Wilhelmus P. M. Rutten
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US Philips Corp
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US Philips Corp
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Assigned to U.S. PHILIPS CORPORATION, A DE CORP. reassignment U.S. PHILIPS CORPORATION, A DE CORP. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: HAISMA, JAN, RUTTEN, WILHELMUS P.M., MULDER, JOHANNA M.L., THEUNISSEN, MATTHIAS J.J. J.J.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/154—Solid phase epitaxy

Definitions

  • the invention relates to a method of manufacturing a semiconductor device in which a polycrystalline or amorphous silicon layer which is provided on a silicon oxide layer on a monocrystalline silicon substrate and which is in contact with the silicon substrate via an opening in the silicon oxide layer, is converted to a monocrystalline layer at least at the opening by means of a heat treatment in the presence of means for concentrating the heat at the opening.
  • the method often leads to substrate damage because of the high induced substrate temperature and the thermal gradients. This leads to degradation of characteristics of semiconductor devices and circuits present in the substrate.
  • Another problem in recrystallization is the occurrence of silicon mass transport under a covering silicon oxide layer which is often present on the polycrystalline or amorphous layer, so that monocrystalline silicon layers are formed with a non-uniform thickness.
  • a third problem is the following.
  • the means for concentrating the heat consist of metal silicides, which are complex, time-consuming to provide, costly, and contaminating, especially at high temperatures.
  • the invention has for its object inter alia to obviate the said problems at least to a substantial degree.
  • the method described in the opening paragraph is characterized in that, before the heat treatment, the polycrystalline or amorphous silicon layer is provided with the said means in the form of a second silicon oxide layer, a second polycrystalline or amorphous silicon layer, and a covering layer, and in that the second silicon oxide layer is given a thickness at the openings in the first silicon oxide layer which is smaller than that of the rest of the second silicon oxide layer, and in that the converted first silicon layer is provided with circuit elements after the heat treatment.
  • the invention is based inter alia on the recognition that the said problems can be avoided by means of additional layers of the kind mentioned.
  • the lower (first) layer remains very flat and yields large crystals. Owing to the thinner oxide above the opening, a greater heat flow arises in situ, which can compensate for the heat loss caused by the presence of the openings in the first silicon oxide layer. Substrate damage is absent.
  • the means of concentrating the heat in the method according to the invention may be formed by means of standard technological methods.
  • the formation of silicon drops in the heat treatment is avoided by the covering layer.
  • the covering layer consists of, for example, silicon oxide.
  • the openings are given the shape of long, narrow grooves, which may possibly be interrupted in longitudinal direction.
  • the [100] or [100] direction is preferably chosen for the direction of the groove.
  • the heat treatment is carried out preferably by means of a laser.
  • a comparatively thick covering layer can be used in this case.
  • a continuous-wave carbon dioxide laser can be used to obtain particularly good results.
  • a melting spot created is displaced in the groove direction in this method.
  • Sub-micron MOST devices can be made with comparatively thin first polycrystalline or amorphous silicon layers, with comparatively thick, mainly high-voltage and power semiconductor devices.
  • the FIGURE represents diagrammatically and in cross-section a portion of a semiconductor device in a stage of manufacturing by the method according to the invention.
  • the embodiment relates to a method of manufacturing a semiconductor device in which a polycrystalline or amorphous silicon oxide layer 3 is provided on a silicon oxide layer 2 on a monocrystalline silicon substrate 1 and is in contact with the silicon substrate 1 via one or several openings 4 in the silicon oxide layer 2.
  • the layer 3 is converted to a monocrystalline layer by means of a heat treatment at least at the opening(s) 4 in the presence of means for concentrating the heat at the opening(s) 4.
  • these means consist of a second silicon oxide layer 5, a second polycrystalline or amorphous silicon layer 6, and a covering layer 7, the second silicon oxide layer 5 being given a thickness at the opening(s) 4 which is smaller than that of the rest of the second silicon oxide layer 5.
  • the converted first silicon layer 3 is provided with circuit elements (not shown).
  • the substrate 1 and the layer 2, 3, 5, 6 and 7 and the opening(s) 4 are provided in a usual manner.
  • an n-type monocrystalline silicon substrate is used for the substrate 1.
  • Layer 2 is a 1.2 ⁇ m thick silicon oxide layer having 1 ⁇ m wide opening 4. At the openings 4, by means of selective epitaxy, which is known per se, the openings 4 are filled with monocrystalline silicon up to the thickness of layer 2.
  • Layer 3 is a 0.5 ⁇ m thick polycrystalline or amorphous silicon layer.
  • Layer 5 is a 1.0 ⁇ m thick silicon oxide layer with depressions of 2 ⁇ m wide and 0.5 ⁇ m thick over the openings 4.
  • Layer 6 is a 0.5 ⁇ m thick polycrystalline or amorphous silicon layer, and layer 7 is a 1.0 ⁇ m thick silicon oxide layer.
  • the direction of the grooves is preferably the [100] or [110] direction.
  • the first polycrystalline or amorphous silicon layer 3 is recrystallized epitaxially from the openings 4 by a heat treatment with a laser, for example a continuous-wave carbon dioxide laser.
  • a laser for example a continuous-wave carbon dioxide laser.
  • the carbon dioxide laser spot has a gaussian shape with an average cross-section equalling 8 ⁇ m or an elliptical shape with a major cross-section of, for example, 20 ⁇ m.
  • a melt spot created by the laser treatment is displaced in the direction of the groove.
  • the thickness of the layer to be recrystallized may alternatively be, for example, 0.1-0.2 ⁇ m.
  • an argon laser may also be used, or a heat treatment with an electron beam; layer 7 must be thinner if an argon laser or an electron beam is used.
  • shapes other than oblong shapes are also possible for the opening 4.
  • a third silicon oxide layer and a third polycrystalline or amorphous silicon layer may also be used, in which case it is possible to recrystallize two layers at the same time.

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  • Recrystallisation Techniques (AREA)
US07/650,520 1990-02-12 1991-02-05 Method of manufacturing a semiconductor device Expired - Fee Related US5057452A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL9000324A NL9000324A (nl) 1990-02-12 1990-02-12 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL9000324 1990-02-12

Publications (1)

Publication Number Publication Date
US5057452A true US5057452A (en) 1991-10-15

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US07/650,520 Expired - Fee Related US5057452A (en) 1990-02-12 1991-02-05 Method of manufacturing a semiconductor device

Country Status (5)

Country Link
US (1) US5057452A (de)
EP (1) EP0442565A1 (de)
JP (1) JPH04214615A (de)
KR (1) KR910016046A (de)
NL (1) NL9000324A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356510A (en) * 1991-10-08 1994-10-18 Thomson-Csf Method for the growing of heteroepitaxial layers
US5436197A (en) * 1993-09-07 1995-07-25 Motorola, Inc. Method of manufacturing a bonding pad structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013109163B4 (de) * 2013-08-23 2022-05-12 Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung polykristalliner, 3D-Strukturen aufweisender Siliziumschichten gleichmäßiger Dicke

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
JPS5826094A (ja) * 1981-08-08 1983-02-16 Fujitsu Ltd 非単結晶半導体層の単結晶化方法
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
JPS61251113A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 非単結晶層の単結晶化方法
US4714684A (en) * 1986-01-09 1987-12-22 Agency Of Industrial Science And Technology Method of forming single crystal layer on dielectric layer by controlled rapid heating
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH084067B2 (ja) * 1985-10-07 1996-01-17 工業技術院長 半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
JPS5826094A (ja) * 1981-08-08 1983-02-16 Fujitsu Ltd 非単結晶半導体層の単結晶化方法
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
JPS61251113A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 非単結晶層の単結晶化方法
US4714684A (en) * 1986-01-09 1987-12-22 Agency Of Industrial Science And Technology Method of forming single crystal layer on dielectric layer by controlled rapid heating
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356510A (en) * 1991-10-08 1994-10-18 Thomson-Csf Method for the growing of heteroepitaxial layers
US5436197A (en) * 1993-09-07 1995-07-25 Motorola, Inc. Method of manufacturing a bonding pad structure

Also Published As

Publication number Publication date
NL9000324A (nl) 1991-09-02
JPH04214615A (ja) 1992-08-05
KR910016046A (ko) 1991-09-30
EP0442565A1 (de) 1991-08-21

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Owner name: U.S. PHILIPS CORPORATION, A DE CORP., NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:THEUNISSEN, MATTHIAS J.J. J.J.;MULDER, JOHANNA M.L.;HAISMA, JAN;AND OTHERS;REEL/FRAME:005625/0819;SIGNING DATES FROM 19910110 TO 19910114

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Effective date: 19951018

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Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362