US5187560A - Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same - Google Patents

Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same Download PDF

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Publication number
US5187560A
US5187560A US07/689,887 US68988791A US5187560A US 5187560 A US5187560 A US 5187560A US 68988791 A US68988791 A US 68988791A US 5187560 A US5187560 A US 5187560A
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US
United States
Prior art keywords
alloy
ohmic electrode
cbn
electrode
boron nitride
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Expired - Fee Related
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US07/689,887
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English (en)
Inventor
Katsuhito Yoshida
Kazuwo Tsuji
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD. reassignment SUMITOMO ELECTRIC INDUSTRIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: TSUJI, KAZUWO, YOSHIDA, KATSUHITO
Priority to US07/974,121 priority Critical patent/US5240877A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Definitions

  • the present invention relates to a process for producing an ohmic electrode for n-type cubic boron nitride.
  • One object of the present invention is to provide an even n-type cBN electrode having good ohmic characteristics which are effectively utilized, e.g., for the preparation of a semiconductor device using a cBN crystal.
  • the present invention relates to an ohmic electrode for n-type cBN, and also relates to a process for producing an ohmic electrode for n-type cBN, which comprises the following steps; providing at least one thin alloy film selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, the weight ratio of Si, Ge and Si plus Ge being 0.1 to 35% by weight, on n-type cBN; providing a thin film of at least one metal selected from Ni, Cr, Mo and Pt on the thin alloy film; and subjecting the n-type cBN having the thin films thus provided to a heat treatment in an inert gas or in a vaccum at a temperature ranging from 350° C. to 600° C. Concerning the inert gas, N 2 , Ar and a mixture of Ar and N 2 are preferable.
  • FIG. 1 is a schematic sectional view showing an ohmic electrode produced by the process of the present invention.
  • FIG. 2 is a graph showing the measurement results of the current voltage characteristics of n-type cBN using the ohmic electrode produced in the example of the present invention.
  • FIG. 1 showing a schematic sectional view of the electrode produced by the process of the present invention
  • one embodiment of the article and the process for producing an ohmic electrode according to the present invention is explained.
  • This invention provides the ohmic electrode for n-type cBN 1, on which the first thin film 2 of at least one alloy selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy is coated, and the second thin film of at least one metal or alloy selected from Ni, Cr, Mo and Pt is coated.
  • the process of the present invention may comprise the following steps: one, providing at least one thin film 2 of an alloy selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy onto the surface of an n-type cBN crystal 1; two, providing at least one thin film 3 of a metal selected from Ni, Cr, Mo and Pt onto the thin film 2, and three, heat-treating the n-type cBN having the aforesaid thin film 2 and the thin film 3 at a temperature ranging from 350° C. to 600° C. in an inert gas atmosphere or in a vacuum.
  • the wetting property of the Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy is improved to solve the aforesaid problem caused by poor wetting properties, and an ohmic electrode having the desired form can be obtained by means of a heat-treatment after vapor depositing a thin film of a metal selected from Ni, Cr, Mo and Pt or a thin alloy film thereby onto the thin Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy film.
  • the heat treatment is generally conducted for from 5 to 60 minutes.
  • the method for providing the thin alloy film and the thin film of Ni, Cr, Mo or Pt is not limited, and may be vapor deposition or sputtering.
  • Ni, Cr, Mo and Pt are preferably used, especially Ni and Cr are preferable from an economical point of view, and Ni is more preferably used in the present invention in view of a stability of the thin film.
  • the content of Si, Ge, Si plus Ge in the Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy is from 0.1% to 35% by weight. If the content of Si, Ge, Si plus Ge is less than 0.1% by weight, the electrode obtained does not show good ohmic characteristics, while if the content is over 35% by weight, a thin alloy film having a sufficient junction strength with the cBN crystal is not obtained.
  • the thickness of the aforementioned thin film of Ni, Cr. Mo and Pt with the ability to inhibit the aggregation of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy film may generally be at least about 200 ⁇ , preferably from 200 to 2000 ⁇ .
  • the aforementioned thin film of Ni, Cr, Mo and Pt are formed by itself or as an alloy film.
  • the thickness of the thin alloy film of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy is generally from 1000 ⁇ to 1 ⁇ m, preferably from 1000 to 3000 ⁇ .
  • Vacuum deposition, sputtering and an ion plating method can be used for making a thin film of Au-Si alloy, Au-Ge alloy, Au-Si-Ge alloy, Ni, Cr, Mo and Pt.
  • the ion plating method is preferably employed.
  • the vapor deposition method is preferably employed in view of the production cost.
  • an n-type cBN crystal consists of two layers can be used for n-type cBN crystals, but after the heat treatment the n-type cBN crystal has markedly better ohmic properties.
  • a thin Au-Si alloy film containing 2.5% of Si by weight, and having thickness of about 2000 ⁇ was vacuum vapor deposited on an n-type cBN crystal and then a thin Cr film having a thickness of about 500 ⁇ is further deposited thereon.
  • the crystal having the coated film was heat treated for 10 minutes in an inert gas atmosphere at 480° C.
  • the electrode thus formed did not cause the phenomenon of aggregation such as an island and when current voltage characteristics were measured, good ohmic characteristics as shown in FIG. 2 were obtained.
  • a flat n-type cBN electrode having good ohmic characteristics could be obtained and hence the present invention can be effectively utilized for the preparation of a semiconductor device using a cBN crystal.

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  • Electrodes Of Semiconductors (AREA)
US07/689,887 1989-11-28 1990-11-28 Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same Expired - Fee Related US5187560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07/974,121 US5240877A (en) 1989-11-28 1992-11-10 Process for manufacturing an ohmic electrode for n-type cubic boron nitride

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1308431A JPH03167877A (ja) 1989-11-28 1989-11-28 ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
JP1-308431 1989-11-28

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US07/974,121 Division US5240877A (en) 1989-11-28 1992-11-10 Process for manufacturing an ohmic electrode for n-type cubic boron nitride

Publications (1)

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US5187560A true US5187560A (en) 1993-02-16

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US (1) US5187560A (fr)
EP (1) EP0455832A4 (fr)
JP (1) JPH03167877A (fr)
WO (1) WO1991008582A1 (fr)
ZA (1) ZA909561B (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298461A (en) * 1990-05-24 1994-03-29 Sumitomo Electric Industries, Ltd. Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride
US5414279A (en) * 1992-09-28 1995-05-09 National Institute For Research In Inorganic Materials cBN semiconductor device having an ohmic electrode and a method of making the same
US5527735A (en) * 1993-10-21 1996-06-18 Sumitomo Electric Industries, Ltd. Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same
US5920121A (en) * 1998-02-25 1999-07-06 Micron Technology, Inc. Methods and structures for gold interconnections in integrated circuits
US6121126A (en) * 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
US6143655A (en) * 1998-02-25 2000-11-07 Micron Technology, Inc. Methods and structures for silver interconnections in integrated circuits
US20010003667A1 (en) * 1998-04-29 2001-06-14 Kie Y. Ahn Bipolar transistors with low-resistance emitter contacts
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
CN108400227A (zh) * 2018-05-04 2018-08-14 佛山市国星半导体技术有限公司 一种倒装led芯片及其制作方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461788B1 (ko) * 2002-04-29 2004-12-14 학교법인 포항공과대학교 실리콘 게르마늄 반도체 기판에서의 저 저항 메탈 전극구조와 제조방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3850688A (en) * 1971-12-29 1974-11-26 Gen Electric Ohmic contact for p-type group iii-v semiconductors
JPS5629381A (en) * 1979-08-17 1981-03-24 Toshiba Corp Compound-semiconductor light emitting element containing garium and manufacture thereof
WO1981000932A1 (fr) * 1979-09-27 1981-04-02 Western Electric Co Contact ohmique dans un semi-conducteur inp ou ingaasp du type p
JPS58112336A (ja) * 1981-12-25 1983-07-04 Mitsubishi Electric Corp 化合物半導体装置の電極形成法
US4831212A (en) * 1986-05-09 1989-05-16 Nissin Electric Company, Limited Package for packing semiconductor devices and process for producing the same
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US5057454A (en) * 1989-10-23 1991-10-15 Sumitomo Electric Industries, Ltd. Process for producing ohmic electrode for p-type cubic system boron nitride

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3684930A (en) * 1970-12-28 1972-08-15 Gen Electric Ohmic contact for group iii-v p-types semiconductors
US3753804A (en) * 1971-08-31 1973-08-21 Philips Corp Method of manufacturing a semiconductor device
US3965279A (en) * 1974-09-03 1976-06-22 Bell Telephone Laboratories, Incorporated Ohmic contacts for group III-V n-type semiconductors
WO1983003713A1 (fr) * 1982-04-12 1983-10-27 Motorola Inc CONTACT OHMIQUE POUR GaAs DE TYPE N
JP3382484B2 (ja) * 1996-12-27 2003-03-04 東芝テック株式会社 電気掃除機の吸込口体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3850688A (en) * 1971-12-29 1974-11-26 Gen Electric Ohmic contact for p-type group iii-v semiconductors
JPS5629381A (en) * 1979-08-17 1981-03-24 Toshiba Corp Compound-semiconductor light emitting element containing garium and manufacture thereof
WO1981000932A1 (fr) * 1979-09-27 1981-04-02 Western Electric Co Contact ohmique dans un semi-conducteur inp ou ingaasp du type p
JPS58112336A (ja) * 1981-12-25 1983-07-04 Mitsubishi Electric Corp 化合物半導体装置の電極形成法
US4831212A (en) * 1986-05-09 1989-05-16 Nissin Electric Company, Limited Package for packing semiconductor devices and process for producing the same
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US5057454A (en) * 1989-10-23 1991-10-15 Sumitomo Electric Industries, Ltd. Process for producing ohmic electrode for p-type cubic system boron nitride

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298461A (en) * 1990-05-24 1994-03-29 Sumitomo Electric Industries, Ltd. Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride
US5422500A (en) * 1990-05-24 1995-06-06 Sumitomo Electric Industries, Ltd. Ohmic contact electrodes for N-type semiconductor cubic boron nitride
US5414279A (en) * 1992-09-28 1995-05-09 National Institute For Research In Inorganic Materials cBN semiconductor device having an ohmic electrode and a method of making the same
US5527735A (en) * 1993-10-21 1996-06-18 Sumitomo Electric Industries, Ltd. Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same
US6121126A (en) * 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
US6100176A (en) * 1998-02-25 2000-08-08 Micron Technology, Inc. Methods and structures for gold interconnections in integrated circuits
US6879017B2 (en) 1998-02-25 2005-04-12 Micron Technology, Inc. Methods and structures for metal interconnections in integrated circuits
US6143655A (en) * 1998-02-25 2000-11-07 Micron Technology, Inc. Methods and structures for silver interconnections in integrated circuits
US7186664B2 (en) 1998-02-25 2007-03-06 Micron Technology, Inc. Methods and structures for metal interconnections in integrated circuits
US20050186773A1 (en) * 1998-02-25 2005-08-25 Micron Technology, Inc. Methods and structures for metal interconnections in integrated circuits
US6504224B1 (en) 1998-02-25 2003-01-07 Micron Technology, Inc. Methods and structures for metal interconnections in integrated circuits
US6541859B1 (en) 1998-02-25 2003-04-01 Micron Technology, Inc. Methods and structures for silver interconnections in integrated circuits
US5920121A (en) * 1998-02-25 1999-07-06 Micron Technology, Inc. Methods and structures for gold interconnections in integrated circuits
US20030209775A1 (en) * 1998-02-25 2003-11-13 Micron Technology, Inc. Methods and structures for metal interconnections in integrated circuits
US6573169B2 (en) 1998-02-27 2003-06-03 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US20050023707A1 (en) * 1998-04-29 2005-02-03 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
US20050026381A1 (en) * 1998-04-29 2005-02-03 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
US6815303B2 (en) 1998-04-29 2004-11-09 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
US6893933B2 (en) 1998-04-29 2005-05-17 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
US20010003667A1 (en) * 1998-04-29 2001-06-14 Kie Y. Ahn Bipolar transistors with low-resistance emitter contacts
US7268413B2 (en) 1998-04-29 2007-09-11 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
CN108400227A (zh) * 2018-05-04 2018-08-14 佛山市国星半导体技术有限公司 一种倒装led芯片及其制作方法
CN108400227B (zh) * 2018-05-04 2023-08-15 佛山市国星半导体技术有限公司 一种倒装led芯片及其制作方法

Also Published As

Publication number Publication date
JPH03167877A (ja) 1991-07-19
EP0455832A1 (fr) 1991-11-13
EP0455832A4 (en) 1992-10-07
WO1991008582A1 (fr) 1991-06-13
ZA909561B (en) 1992-04-29

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