US5625233A - Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide - Google Patents

Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide Download PDF

Info

Publication number
US5625233A
US5625233A US08/372,633 US37263395A US5625233A US 5625233 A US5625233 A US 5625233A US 37263395 A US37263395 A US 37263395A US 5625233 A US5625233 A US 5625233A
Authority
US
United States
Prior art keywords
refractory metal
layer
diffusion barrier
aluminide
overlying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US08/372,633
Other languages
English (en)
Inventor
Cyril Cabral, Jr.
Evan G. Colgan
Alfred Grill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US08/372,633 priority Critical patent/US5625233A/en
Assigned to IBM CORPORATION reassignment IBM CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CABRAL, CYRIL, JR., COLGAN, EVAN GEORGE, GRILL, ALFRED
Priority to US08/465,054 priority patent/US5639316A/en
Priority to TW084113519A priority patent/TW359861B/zh
Priority to KR1019950053760A priority patent/KR100204082B1/ko
Priority to EP95120466A priority patent/EP0725428A3/fr
Priority to JP156596A priority patent/JP3306740B2/ja
Application granted granted Critical
Publication of US5625233A publication Critical patent/US5625233A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/049—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by diffusing alloying elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Definitions

  • the present invention generally relates to a semiconductor structure that has a semiconductor base layer, a refractory metal layer deposited on top of the semiconductor base layer and an aluminum layer deposited on top of the refractory metal layer and a method of making the same and more particularly, relates to a semiconductor structure that has a silicon base layer, a refractory metal layer deposited on top of the silicon base layer and an aluminum layer deposited on top of the refractory metal layer whereby the latter two layers function as a diffusion barrier for oxygen to protect the semiconductor base layer from oxidation by the formation of an aluminum oxide layer on the surface of the aluminum and a method of making the same.
  • Refractory metals such as tantalum and titanium have been used as diffusion barriers, adhesion layers or X-ray lithography masks in electronic applications. Unfortunately, these materials oxidize easily when annealed causing reliability problems due to the increased resistivity and stress.
  • Other refractory metals such as Nb, V, Zr, Hf, Cr, Mo and W also oxidize easily in annealing ambients containing minimal amounts of oxygen and at relatively low temperatures. It is an expensive and difficult process to remove all oxygen from an annealing environment and some processes actually require an oxidizing ambient. Small amounts of oxygen incorporated interstitially in the refractory metals can cause large increases in compressive stress.
  • Ta diffusion barrier between Si and Cu was used by Holloway, et al., J. Appl. Phys., 71 (11), 5433 (1992).
  • the use of Ta diffusion barrier between a high dielectric material and Si in the fabrication of a high dielectric oxide material has been shown in Grill, et al., J. Mater. Res., 7 (12), 3260 (1992).
  • the fabrication of high dielectric constant oxide materials requires high temperature processing (>650° C.) in oxygen ambients which generally cause the underlying Si to oxidize, and thus creating an additional in-series low dielectric capacitor.
  • diffusion barrier materials such as TiN, WN and TaN have been used in VLSI applications, i.e., in contact holes for separating conductors from underlying silicon.
  • these materials are not suitable oxygen diffusion barriers because they cannot withstand oxidation anneal cycles that the devices may be subjected to.
  • elemental metals such as Pt, Au and Ru for the prevention of diffusion of oxygen to the underlying layer of silicon and its subsequent oxidation. It was found that none of the pure metals prevented the diffusion and the resulting SiO 2 formation. A break in the electrical conduction path to the silicon substrate occurred as a result.
  • high dielectric constant Perovskite compounds such as PZT, PLZT or Ba x Sr 1-x TiO 3
  • PZT, PLZT or Ba x Sr 1-x TiO 3 These materials require high temperature (>650° C.) oxygen anneal in order to crystallize. It also requires a Pt seed layer for crystallization into a Perovskite phase which has the highest dielectric constant, i.e., 380 vs. about 40.
  • Si For simple process integration, it is desirable to use Si as the lower electrode.
  • a problem thus incurred during an oxygen anneal of the Perovskite compound/Pt/Si structure is the formation of an SiO 2 layer at the Pt/Si interface which reduces the effective dielectric constant.
  • a diffusion barrier layer is therefore needed for preventing oxygen diffusion down to the Si layer, and also for preventing the Si diffusion up to the Pt layer.
  • the present invention provides a bi-layer thin film structure consisting of aluminum on a refractory metal layer that can be used as a diffusion barrier to oxygen penetration at high temperatures and thus preventing the electrical and mechanical degradation of the refractory metal.
  • the present invention utilizes a thin aluminum layer on top of a refractory metal layer as a diffusion barrier which can withstand high temperature annealing (>650° C.) and prevent oxygen diffusion.
  • the layer structure of the diffusion barrier is Al 2 O 3 /refractory metal aluminide/refractory metal silicide/Si.
  • the use of a thin film of aluminum on a refractory metal such as Ta, Ti, Nb, V, Zr, Hf, Cr, Mo, or W, in particular, aluminum on tantalum, reacts on annealing to form an effective diffusion barrier against oxygen penetration during high temperature annealing.
  • the final diffusion barrier structure after annealing consists of Al 2 O 3 on Al 3 Ta on Ta or TaSi 2 , when the diffusion barrier is in contact with Si. This final layer structure can withstand high temperature oxidation annealing in excess of 650° C.
  • FIGS. 1A-1D are enlarged cross-sectional views of the layer structures of a prior art and the present invention.
  • FIGS. 2A-2B are graphs illustrating X-ray diffraction traces of as deposited Al/Ta on Si and annealed Al/Ta on Si.
  • FIGS. 3A-3B are graphs illustrating stress as a function of temperature for a pure Ta film on an SiO 2 substrate and for a Al/Ta film on an identical SiO 2 substrate.
  • FIGS. 4A and 4B are graphs illustrating an Auger analysis peak height vs. sputter time for an as deposited Al/Ta on Si film and for an Al/Ta on Si film after annealing in oxygen for one minute at 700° C.
  • FIG. 5 is an enlarged cross-sectional view of a final capacitor structure using the Al/refractory metal oxygen diffusion barrier after a RTO anneal.
  • a thin aluminum layer deposited on a refractory metal diffusion barrier in a structure of Al 2 O 3 /aluminide/refractory metal silicide/Si is used to withstand a high temperature annealing of greater than 650° C. and to prevent oxygen diffusion.
  • a thin film of aluminum can be used on a variety of refractory metal films, such as Ta, Ti, Nb, V, Zr, Hf, Cr, Mo or W.
  • refractory metal films such as Ta, Ti, Nb, V, Zr, Hf, Cr, Mo or W.
  • an aluminum film deposited on a tantalum film which reacts to form an aluminide can be used as a diffusion barrier layer against oxygen penetration during a high temperature annealing process.
  • FIG. 1A wherein a prior art diffusion barrier of a refractory metal layer 12 deposited on a substrate 14 is shown.
  • FIG. 1B shows a present invention oxygen diffusion barrier arrangement wherein an aluminum film 16 is deposited on top of a refractory metal layer 18 which is in turn deposited on top of a substrate 20.
  • a thin layer 22 of Al 2 O 3 forms on the surface.
  • FIG. 1C shows During a high temperature annealing, the excess metallic Al reacts with Ta at temperatures higher than 400° C. to form a layer of high melting point (>1000° C.) intermetallic of tantalum aluminide. This is shown in FIG.
  • FIG. 1C depicts the preferred embodiment in a X-ray lithography mask application where a SiO 2 or Si 3 N 4 substrate is used.
  • the final diffusion barrier structure after annealing consists of Al 2 O 3 on Al 3 Ta, i.e., layer 24 in FIG. 1C, on Ta or TaSi 2 , i.e., layer 26 in FIG. 1D, when the diffusion barrier is in contact with Si as would be the case in a capacitor structure.
  • This final structure can withstand high temperature oxidation annealing at higher than 650° C.
  • an aluminum film of 15 nm is first deposited on 50 nm of Ta using the physical vapor deposition technique of evaporation. Samples were annealed in an oxidation furnace at 650° C. for 30 min and in a Flexus F2400 thin film stress profiler system.
  • FIGS. 2A-2B X-ray diffraction traces of an as deposited Al/Ta film on Si and an annealed Al/Ta film on Si are shown in FIGS. 2A-2B.
  • the annealing conditions used were 650° C. for 30 min in 0 2 .
  • the as deposited X-ray diffraction plot of the Al/Ta/Si film shows peaks for Al, Ta and the Si substrate.
  • the graph for the annealed sample Al 2 O 3 /Al 3 Ta/TaSi 2 /Si shows the Al 2 O 3 , Ta and TaSi 2 peaks. The location of the peaks are marked. Also marked are the location of Ta 2 O 3 peaks which are not present in the annealed sample indicating no Ta 2 O 3 formation.
  • FIGS. 3A-3B Graphs of stress plotted as a function of temperature for a pure Ta film on an SiO 2 substrate and for a Al/Ta film on an identical SiO 2 substrate are shown in FIGS. 3A-3B.
  • the thermal cycling was conducted at 10° C./min to 400° C. seven times in He/O 2 .
  • the stress remains constant after the second thermal cycle upon the complete formation of the Al 3 Ta phase.
  • the X-ray diffraction curves and the stress analysis curves shown in FIGS. 2A-2B and 3A-3B therefore clearly prove the effectiveness of the Al/Ta bi-layer as a diffusion barrier to oxygen penetration at high temperatures.
  • FIGS. 4A and 4B show graphs of Auger analysis peak height vs. sputter time (min) for an as deposited 15 nm Al on 50 nm Ta on Si film and for the same film annealed in oxygen for 1 min at 700° C. (by RTO, or rapid thermal oxidation anneal).
  • Al , Ta, Si, O 2 and Cl were monitored. The Cl was monitored to determine surface contamination.
  • FIG. 4A shows data that verifies the structure of the as deposited sample of approximately 15 nm Al on 50 nm Ta on Si with a thin Al 2 O 3 surface layer formed when the film was exposed to atmosphere.
  • the film as all other films utilized in the present invention were deposited in an Airco FC3200 e-beam evaporation system with a base pressure between 1 and 2 ⁇ 10 7 Torr.
  • the Al was deposited at a rate of 4 ⁇ /sec and Ta at a rate of 2.5 ⁇ /sec.
  • the graph shown in FIG. 4B reveals that after a 700° C., 1 min RTO anneal, the structure consists of a top Al 2 O 3 layer thicker than in the as deposited case, and an underlying Al 3 Ta(O) layer, followed by a Ta layer and a TaSi 2 layer in contact with the Si substrate. It is observed that the Ta layer shows no evidence of oxidation indicating the structure is a diffusion barrier to oxygen penetration at 700° C. for 1 min. This is the temperature and time needed to crystallize the PLT (a high dielectric material) into the phase with the highest dielectric constant.
  • the Auger results agree with the X-ray diffraction analysis and stress as a function of temperature analysis conducted on various samples in the present invention.
  • FIG. 5 shows a final capacitor structure incorporating the Al/refractory metal oxygen diffusion barrier after a RTO anneal.
  • the refractory metal is tantalum and the high dielectric material is PLT
  • the measured dielectric constant between the top metal contact (i.e., Al) and the platinum layer is 380 ⁇ 10% and the dielectric constant measured between the top and bottom metal contact was also 380 ⁇ 10%.
  • the present invention can be used in any VLSI electronic application which involves the use of a refractory metal that may be oxidized during annealing causing a degradation of the material.
  • a refractory metal that may be oxidized during annealing causing a degradation of the material.
  • diffusion barriers adhesion layers, X-ray lithography masks, metal gate lines, metal contacts and electrode materials for high dielectric material formation applications.

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Semiconductor Memories (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
US08/372,633 1995-01-13 1995-01-13 Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide Expired - Fee Related US5625233A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US08/372,633 US5625233A (en) 1995-01-13 1995-01-13 Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
US08/465,054 US5639316A (en) 1995-01-13 1995-06-06 Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal
TW084113519A TW359861B (en) 1995-01-13 1995-12-18 Thin film multi-layer oxygen diffusion barrier consisting of refractory metal
KR1019950053760A KR100204082B1 (ko) 1995-01-13 1995-12-21 내열 금속과 그 위의 알루미늄으로 구성된, 박막다중층산소확산장벽
EP95120466A EP0725428A3 (fr) 1995-01-13 1995-12-22 Multi-couches à film mince agissant en barrière de diffusion à l'oxygène et constituée d'aluminium sur un métal réfractaire
JP156596A JP3306740B2 (ja) 1995-01-13 1996-01-09 高融点金属上のアルミニウムからなる薄膜多層酸素拡散バリア

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/372,633 US5625233A (en) 1995-01-13 1995-01-13 Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US08/465,054 Division US5639316A (en) 1995-01-13 1995-06-06 Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal

Publications (1)

Publication Number Publication Date
US5625233A true US5625233A (en) 1997-04-29

Family

ID=23469011

Family Applications (2)

Application Number Title Priority Date Filing Date
US08/372,633 Expired - Fee Related US5625233A (en) 1995-01-13 1995-01-13 Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
US08/465,054 Expired - Fee Related US5639316A (en) 1995-01-13 1995-06-06 Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal

Family Applications After (1)

Application Number Title Priority Date Filing Date
US08/465,054 Expired - Fee Related US5639316A (en) 1995-01-13 1995-06-06 Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal

Country Status (5)

Country Link
US (2) US5625233A (fr)
EP (1) EP0725428A3 (fr)
JP (1) JP3306740B2 (fr)
KR (1) KR100204082B1 (fr)
TW (1) TW359861B (fr)

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998057380A1 (fr) * 1997-06-09 1998-12-17 Bell Communications Research, Inc. Recuit de cellule ferroelectrique de perovskite cristalline et cellules dotees de proprietes de barriere ameliorees
US5929475A (en) * 1994-12-28 1999-07-27 Matsushita Electronics Corp Capacitor for integrated circuit and its fabrication method
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
US20020024080A1 (en) * 2000-08-31 2002-02-28 Derderian Garo J. Capacitor fabrication methods and capacitor constructions
US6417537B1 (en) 2000-01-18 2002-07-09 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US20020090777A1 (en) * 2001-01-05 2002-07-11 Leonard Forbes Methods of forming capacitor structures, and capacitor structures
KR100335399B1 (ko) * 1998-10-29 2002-07-18 박종섭 강유전체램 소자의 제조방법
US20020094632A1 (en) * 2000-08-31 2002-07-18 Agarwal Vishnu K. Capacitor fabrication methods and capacitor constructions
US20020115231A1 (en) * 2000-08-16 2002-08-22 Lane Richard H. Method of forming noble metal pattern
US6465828B2 (en) 1999-07-30 2002-10-15 Micron Technology, Inc. Semiconductor container structure with diffusion barrier
US20020177302A1 (en) * 2000-01-18 2002-11-28 Micron Technology, Inc. Structures and methods to enhance copper metallization
US20030157764A1 (en) * 2002-02-20 2003-08-21 Micron Technology, Inc. Evaporated LaA1O3 films for gate dielectrics
US6613641B1 (en) * 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
US6660610B2 (en) * 1996-07-08 2003-12-09 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
US20040130033A1 (en) * 2002-12-27 2004-07-08 Renesas Technology Corp. Semiconductor device
US20040169213A1 (en) * 2000-01-18 2004-09-02 Micron Technology, Inc. Integrated circuit and seed layers
US20040175882A1 (en) * 2003-03-04 2004-09-09 Micron Technology, Inc. Atomic layer deposited dielectric layers
KR100448852B1 (ko) * 2001-12-26 2004-09-18 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US20040185654A1 (en) * 2001-12-20 2004-09-23 Micron Technology, Inc. Low-temperature growth high-quality ultra-thin praseodymium gate dielectrics
US20040214399A1 (en) * 2003-04-22 2004-10-28 Micron Technology, Inc. Atomic layer deposited ZrTiO4 films
US20040222476A1 (en) * 2002-01-17 2004-11-11 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOxNy
US20050020017A1 (en) * 2003-06-24 2005-01-27 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US20050023697A1 (en) * 2000-01-18 2005-02-03 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US20050054165A1 (en) * 2003-03-31 2005-03-10 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers
US20050269669A1 (en) * 2003-07-21 2005-12-08 Mcclure Brent A Capacitor constructions and methods of forming
US20060006548A1 (en) * 2003-08-05 2006-01-12 Micron Technology, Inc. H2 plasma treatment
US7053432B2 (en) * 2000-08-31 2006-05-30 Micron Technology, Inc. Enhanced surface area capacitor fabrication methods
US20060246741A1 (en) * 2002-07-30 2006-11-02 Micron Technology, Inc. ATOMIC LAYER DEPOSITED NANOLAMINATES OF HfO2/ZrO2 FILMS AS GATE DIELECTRICS
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7259434B2 (en) 2001-08-30 2007-08-21 Micron Technology, Inc. Highly reliable amorphous high-k gate oxide ZrO2
US20070224730A1 (en) * 2003-07-11 2007-09-27 Kung-Hao Chang Hillock-free aluminum layer and method of forming the same
US7560793B2 (en) 2002-05-02 2009-07-14 Micron Technology, Inc. Atomic layer deposition and conversion
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7670469B2 (en) 2000-01-18 2010-03-02 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US7728626B2 (en) 2002-07-08 2010-06-01 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US8466016B2 (en) 2006-08-31 2013-06-18 Micron Technolgy, Inc. Hafnium tantalum oxynitride dielectric
US8501563B2 (en) 2005-07-20 2013-08-06 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US9142631B2 (en) 2010-03-17 2015-09-22 Cree, Inc. Multilayer diffusion barriers for wide bandgap Schottky barrier devices

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921467B2 (en) * 1996-07-15 2005-07-26 Semitool, Inc. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
US6752584B2 (en) * 1996-07-15 2004-06-22 Semitool, Inc. Transfer devices for handling microelectronic workpieces within an environment of a processing machine and methods of manufacturing and using such devices in the processing of microelectronic workpieces
US5891317A (en) * 1997-02-04 1999-04-06 Avon Products, Inc. Electroformed hollow jewelry
KR100269306B1 (ko) * 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
JP3165093B2 (ja) * 1997-11-13 2001-05-14 松下電子工業株式会社 半導体装置およびその製造方法
US7244677B2 (en) * 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
US6632292B1 (en) * 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
TW593731B (en) 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6517894B1 (en) 1998-04-30 2003-02-11 Ebara Corporation Method for plating a first layer on a substrate and a second layer on the first layer
US6497801B1 (en) 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US6509601B1 (en) 1998-07-31 2003-01-21 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor protection layer and method for manufacturing the same
WO2000040779A1 (fr) 1998-12-31 2000-07-13 Semitool, Inc. Procede, solution chimique et appareil d'electrodeposition de matiere de soudure a taux de depot eleve sur une piece de microelectronique
KR100310824B1 (ko) * 1999-01-29 2001-10-17 김영환 반도체장치의 캐패시터 및 그 제조방법
US6387748B1 (en) * 1999-02-16 2002-05-14 Micron Technology, Inc. Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions
US7351314B2 (en) 2003-12-05 2008-04-01 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
US6916412B2 (en) * 1999-04-13 2005-07-12 Semitool, Inc. Adaptable electrochemical processing chamber
US7264698B2 (en) 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7585398B2 (en) 1999-04-13 2009-09-08 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
TW527444B (en) 1999-04-13 2003-04-11 Semitool Inc System for electrochemically processing a workpiece
US7160421B2 (en) 1999-04-13 2007-01-09 Semitool, Inc. Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7020537B2 (en) 1999-04-13 2006-03-28 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7189318B2 (en) 1999-04-13 2007-03-13 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7438788B2 (en) 1999-04-13 2008-10-21 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7351315B2 (en) 2003-12-05 2008-04-01 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
AU2001282879A1 (en) 2000-07-08 2002-01-21 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
US6518198B1 (en) 2000-08-31 2003-02-11 Micron Technology, Inc. Electroless deposition of doped noble metals and noble metal alloys
KR100387262B1 (ko) * 2000-12-29 2003-06-12 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP2003051582A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体装置およびその製造方法
AU2002343330A1 (en) 2001-08-31 2003-03-10 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6495422B1 (en) 2001-11-09 2002-12-17 Taiwan Semiconductor Manfacturing Company Methods of forming high-k gate dielectrics and I/O gate oxides for advanced logic application
US6893505B2 (en) * 2002-05-08 2005-05-17 Semitool, Inc. Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids
US7025866B2 (en) * 2002-08-21 2006-04-11 Micron Technology, Inc. Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces
US20050092611A1 (en) * 2003-11-03 2005-05-05 Semitool, Inc. Bath and method for high rate copper deposition
US20050230262A1 (en) * 2004-04-20 2005-10-20 Semitool, Inc. Electrochemical methods for the formation of protective features on metallized features
KR100722772B1 (ko) * 2006-05-03 2007-05-30 삼성전자주식회사 박막 구조물 및 이의 박막 구조물 형성 방법과, 커패시터및 이의 커패시터 형성 방법
US20080264774A1 (en) * 2007-04-25 2008-10-30 Semitool, Inc. Method for electrochemically depositing metal onto a microelectronic workpiece
US9312136B2 (en) 2014-03-06 2016-04-12 International Business Machines Corporation Replacement metal gate stack for diffusion prevention
US9443772B2 (en) 2014-03-19 2016-09-13 Globalfoundries Inc. Diffusion-controlled semiconductor contact creation
US9397181B2 (en) 2014-03-19 2016-07-19 International Business Machines Corporation Diffusion-controlled oxygen depletion of semiconductor contact interface

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214553A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd キヤパシタ
JPH0399471A (ja) * 1989-09-12 1991-04-24 Fujitsu Ltd 半導体装置
US5015440A (en) * 1989-09-01 1991-05-14 Mcdonnell Douglas Corporation Refractory aluminides
US5313101A (en) * 1990-08-28 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Interconnection structure of semiconductor integrated circuit device
US5355020A (en) * 1991-07-08 1994-10-11 Samsung Electronics Co., Ltd. Semiconductor device having a multi-layer metal contact
US5421974A (en) * 1993-04-01 1995-06-06 Advanced Micro Devices, Inc. Integrated circuit having silicide-nitride based multi-layer metallization

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1174289A (fr) * 1956-05-26 1959-03-09 Teves Kg Alfred Procédé pour la formation d'un revêtement protecteur, notamment sur les cônes desoupapes de moteurs à combustion interne, les aubes de turbines de réacteurs et d'autres organes mécaniques exposés à des contraintes thermiques importantes
US3420689A (en) * 1965-12-21 1969-01-07 Gen Electric Method for forming an oxidation resistant coating on a substrate
US3939047A (en) * 1971-11-15 1976-02-17 Nippon Electric Co., Ltd. Method for fabricating electrode structure for a semiconductor device having a shallow junction
US4489482A (en) * 1983-06-06 1984-12-25 Fairchild Camera & Instrument Corp. Impregnation of aluminum interconnects with copper
JPH0543958A (ja) * 1991-01-17 1993-02-23 Sumitomo Light Metal Ind Ltd 耐酸化性チタニウムアルミナイドの製造方法
EP0514149B1 (fr) * 1991-05-16 1995-09-27 Nec Corporation Condensateur à couches minces
JP2937613B2 (ja) * 1991-07-16 1999-08-23 日本電気株式会社 薄膜配線およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214553A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd キヤパシタ
US5015440A (en) * 1989-09-01 1991-05-14 Mcdonnell Douglas Corporation Refractory aluminides
JPH0399471A (ja) * 1989-09-12 1991-04-24 Fujitsu Ltd 半導体装置
US5313101A (en) * 1990-08-28 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Interconnection structure of semiconductor integrated circuit device
US5355020A (en) * 1991-07-08 1994-10-11 Samsung Electronics Co., Ltd. Semiconductor device having a multi-layer metal contact
US5421974A (en) * 1993-04-01 1995-06-06 Advanced Micro Devices, Inc. Integrated circuit having silicide-nitride based multi-layer metallization

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Base Electrodes for High Dielectric Constant Oxide Materials in Silicon Technology A. Grill, et al.; J. Mater. Res., vol. 7, No. 12, Dec. 1992, pp. 3260 3265. *
Base Electrodes for High Dielectric Constant Oxide Materials in Silicon Technology A. Grill, et al.; J. Mater. Res., vol. 7, No. 12, Dec. 1992, pp. 3260-3265.
Tantalum as a Diffusion Barrier Between Copper and Silicon: Failure Mechanism and Effect of Nitrogen Additions; Karen Holloway, et al.; J. Appl. Phys. 71 ∩11, Jun. 1, 1992, pp. 5433-5444.
Tantalum as a Diffusion Barrier Between Copper and Silicon: Failure Mechanism and Effect of Nitrogen Additions; Karen Holloway, et al.; J. Appl. Phys. 71 11, Jun. 1, 1992, pp. 5433 5444. *

Cited By (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6468875B2 (en) 1994-12-28 2002-10-22 Matsushita Electric Industrial Co., Ltd. Fabrication method of capacitor for integrated circuit
US5929475A (en) * 1994-12-28 1999-07-27 Matsushita Electronics Corp Capacitor for integrated circuit and its fabrication method
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
US6838353B1 (en) 1996-07-08 2005-01-04 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
US7205599B2 (en) * 1996-07-08 2007-04-17 Micron Technology, Inc. Devices having improved capacitance
US7126205B2 (en) 1996-07-08 2006-10-24 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
US20060216532A1 (en) * 1996-07-08 2006-09-28 Micron Technology, Inc. Methods and apparatus for devices having improved capacitance
US20050037592A1 (en) * 1996-07-08 2005-02-17 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
US6660610B2 (en) * 1996-07-08 2003-12-09 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
US6274388B1 (en) * 1997-06-09 2001-08-14 Telcordia Technologies, Inc. Annealing of a crystalline perovskite ferroelectric cell
WO1998057380A1 (fr) * 1997-06-09 1998-12-17 Bell Communications Research, Inc. Recuit de cellule ferroelectrique de perovskite cristalline et cellules dotees de proprietes de barriere ameliorees
KR100335399B1 (ko) * 1998-10-29 2002-07-18 박종섭 강유전체램 소자의 제조방법
US6465828B2 (en) 1999-07-30 2002-10-15 Micron Technology, Inc. Semiconductor container structure with diffusion barrier
US6780706B2 (en) 1999-07-30 2004-08-24 Micron Technology, Inc. Semiconductor container structure with diffusion barrier
US7670469B2 (en) 2000-01-18 2010-03-02 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US7002202B2 (en) 2000-01-18 2006-02-21 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US20060255462A1 (en) * 2000-01-18 2006-11-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US6631069B2 (en) 2000-01-18 2003-10-07 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US20060246733A1 (en) * 2000-01-18 2006-11-02 Micron Technology, Inc. Method for making integrated circuits
US20020182859A1 (en) * 2000-01-18 2002-12-05 Micron Technology, Inc. Structures and methods to enhance copper metallization
US6664583B2 (en) 2000-01-18 2003-12-16 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US6664584B2 (en) 2000-01-18 2003-12-16 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US6670256B2 (en) 2000-01-18 2003-12-30 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US20040085802A1 (en) * 2000-01-18 2004-05-06 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US6417537B1 (en) 2000-01-18 2002-07-09 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US20020177302A1 (en) * 2000-01-18 2002-11-28 Micron Technology, Inc. Structures and methods to enhance copper metallization
US20040169213A1 (en) * 2000-01-18 2004-09-02 Micron Technology, Inc. Integrated circuit and seed layers
US7015527B2 (en) 2000-01-18 2006-03-21 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US7745934B2 (en) 2000-01-18 2010-06-29 Micron Technology, Inc. Integrated circuit and seed layers
US8779596B2 (en) 2000-01-18 2014-07-15 Micron Technology, Inc. Structures and methods to enhance copper metallization
US7253521B2 (en) 2000-01-18 2007-08-07 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US7535103B2 (en) 2000-01-18 2009-05-19 Micron Technology, Inc. Structures and methods to enhance copper metallization
US20090001586A1 (en) * 2000-01-18 2009-01-01 Micron Technology, Inc. Integrated circuit and seed layers
US7262130B1 (en) 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US7402516B2 (en) 2000-01-18 2008-07-22 Micron Technology, Inc. Method for making integrated circuits
US7301190B2 (en) 2000-01-18 2007-11-27 Micron Technology, Inc. Structures and methods to enhance copper metallization
US20050023697A1 (en) * 2000-01-18 2005-02-03 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US7368378B2 (en) 2000-01-18 2008-05-06 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US7394157B2 (en) * 2000-01-18 2008-07-01 Micron Technology, Inc. Integrated circuit and seed layers
US7378737B2 (en) 2000-01-18 2008-05-27 Micron Technology, Inc. Structures and methods to enhance copper metallization
US20020115231A1 (en) * 2000-08-16 2002-08-22 Lane Richard H. Method of forming noble metal pattern
US7157761B2 (en) * 2000-08-16 2007-01-02 Micron Technology, Inc. Capacitor with noble metal pattern
US7217615B1 (en) 2000-08-31 2007-05-15 Micron Technology, Inc. Capacitor fabrication methods including forming a conductive layer
US20020094632A1 (en) * 2000-08-31 2002-07-18 Agarwal Vishnu K. Capacitor fabrication methods and capacitor constructions
US20020024080A1 (en) * 2000-08-31 2002-02-28 Derderian Garo J. Capacitor fabrication methods and capacitor constructions
US7288808B2 (en) 2000-08-31 2007-10-30 Micron Technology, Inc. Capacitor constructions with enhanced surface area
US7109542B2 (en) 2000-08-31 2006-09-19 Micron Technology, Inc. Capacitor constructions having a conductive layer
US20070178640A1 (en) * 2000-08-31 2007-08-02 Derderian Garo J Capacitor fabrication methods and capacitor constructions
US20070007572A1 (en) * 2000-08-31 2007-01-11 Agarwal Vishnu K Capacitor fabrication methods and capacitor constructions
US7053432B2 (en) * 2000-08-31 2006-05-30 Micron Technology, Inc. Enhanced surface area capacitor fabrication methods
US20020164852A1 (en) * 2001-01-05 2002-11-07 Leonard Forbes Capacitor structures
US20020090777A1 (en) * 2001-01-05 2002-07-11 Leonard Forbes Methods of forming capacitor structures, and capacitor structures
US20050026355A1 (en) * 2001-01-05 2005-02-03 Leonard Forbes Capacitor structures
US7192827B2 (en) * 2001-01-05 2007-03-20 Micron Technology, Inc. Methods of forming capacitor structures
US7166883B2 (en) 2001-01-05 2007-01-23 Micron Technology, Inc. Capacitor structures
US20050167723A1 (en) * 2001-01-05 2005-08-04 Leonard Forbes Capacitor structures
US6992368B2 (en) 2001-01-17 2006-01-31 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
US20030203586A1 (en) * 2001-01-17 2003-10-30 Volant Richard P. Production of metal insulator metal (MIM) structures using anodizing process
US6613641B1 (en) * 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US8652957B2 (en) 2001-08-30 2014-02-18 Micron Technology, Inc. High-K gate dielectric oxide
US7259434B2 (en) 2001-08-30 2007-08-21 Micron Technology, Inc. Highly reliable amorphous high-k gate oxide ZrO2
US20040183108A1 (en) * 2001-12-20 2004-09-23 Micron Technology, Inc. Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
US7064058B2 (en) 2001-12-20 2006-06-20 Micron Technology, Inc. Low-temperature growth high-quality ultra-thin praseodymium gate dieletrics
US20040185654A1 (en) * 2001-12-20 2004-09-23 Micron Technology, Inc. Low-temperature growth high-quality ultra-thin praseodymium gate dielectrics
US6979855B2 (en) 2001-12-20 2005-12-27 Micron Technology, Inc. High-quality praseodymium gate dielectrics
KR100448852B1 (ko) * 2001-12-26 2004-09-18 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US20040222476A1 (en) * 2002-01-17 2004-11-11 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOxNy
US7205620B2 (en) 2002-01-17 2007-04-17 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOxNy
US20030157764A1 (en) * 2002-02-20 2003-08-21 Micron Technology, Inc. Evaporated LaA1O3 films for gate dielectrics
US6893984B2 (en) 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US20050145957A1 (en) * 2002-02-20 2005-07-07 Micron Technology, Inc. Evaporated LaAlO3 films for gate dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7670646B2 (en) 2002-05-02 2010-03-02 Micron Technology, Inc. Methods for atomic-layer deposition
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7560793B2 (en) 2002-05-02 2009-07-14 Micron Technology, Inc. Atomic layer deposition and conversion
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7554161B2 (en) 2002-06-05 2009-06-30 Micron Technology, Inc. HfAlO3 films for gate dielectrics
US7728626B2 (en) 2002-07-08 2010-06-01 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US8228725B2 (en) 2002-07-08 2012-07-24 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US20060246741A1 (en) * 2002-07-30 2006-11-02 Micron Technology, Inc. ATOMIC LAYER DEPOSITED NANOLAMINATES OF HfO2/ZrO2 FILMS AS GATE DIELECTRICS
US8125038B2 (en) 2002-07-30 2012-02-28 Micron Technology, Inc. Nanolaminates of hafnium oxide and zirconium oxide
US20040130033A1 (en) * 2002-12-27 2004-07-08 Renesas Technology Corp. Semiconductor device
US20040175882A1 (en) * 2003-03-04 2004-09-09 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7405454B2 (en) 2003-03-04 2008-07-29 Micron Technology, Inc. Electronic apparatus with deposited dielectric layers
US20060001151A1 (en) * 2003-03-04 2006-01-05 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US20060255470A1 (en) * 2003-03-31 2006-11-16 Micron Technology, Inc. ZrAlxOy DIELECTRIC LAYERS
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US20050054165A1 (en) * 2003-03-31 2005-03-10 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers
US7625794B2 (en) 2003-03-31 2009-12-01 Micron Technology, Inc. Methods of forming zirconium aluminum oxide
US20040214399A1 (en) * 2003-04-22 2004-10-28 Micron Technology, Inc. Atomic layer deposited ZrTiO4 films
US20050280067A1 (en) * 2003-04-22 2005-12-22 Micron Technology, Inc. Atomic layer deposited zirconium titanium oxide films
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7863667B2 (en) 2003-04-22 2011-01-04 Micron Technology, Inc. Zirconium titanium oxide films
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7312494B2 (en) 2003-06-24 2007-12-25 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US20050020017A1 (en) * 2003-06-24 2005-01-27 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7944056B2 (en) * 2003-07-11 2011-05-17 Chimei Innolux Corporation Hillock-free aluminum layer and method of forming the same
US20070224730A1 (en) * 2003-07-11 2007-09-27 Kung-Hao Chang Hillock-free aluminum layer and method of forming the same
US20050269669A1 (en) * 2003-07-21 2005-12-08 Mcclure Brent A Capacitor constructions and methods of forming
US7440255B2 (en) 2003-07-21 2008-10-21 Micron Technology, Inc. Capacitor constructions and methods of forming
US7504674B2 (en) 2003-08-05 2009-03-17 Micron Technology, Inc. Electronic apparatus having a core conductive structure within an insulating layer
US20060006548A1 (en) * 2003-08-05 2006-01-12 Micron Technology, Inc. H2 plasma treatment
US8541276B2 (en) 2004-08-31 2013-09-24 Micron Technology, Inc. Methods of forming an insulating metal oxide
US8154066B2 (en) 2004-08-31 2012-04-10 Micron Technology, Inc. Titanium aluminum oxide films
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US8501563B2 (en) 2005-07-20 2013-08-06 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8921914B2 (en) 2005-07-20 2014-12-30 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US8951903B2 (en) 2005-08-30 2015-02-10 Micron Technology, Inc. Graded dielectric structures
US9627501B2 (en) 2005-08-30 2017-04-18 Micron Technology, Inc. Graded dielectric structures
US8466016B2 (en) 2006-08-31 2013-06-18 Micron Technolgy, Inc. Hafnium tantalum oxynitride dielectric
US8759170B2 (en) 2006-08-31 2014-06-24 Micron Technology, Inc. Hafnium tantalum oxynitride dielectric
US9142631B2 (en) 2010-03-17 2015-09-22 Cree, Inc. Multilayer diffusion barriers for wide bandgap Schottky barrier devices

Also Published As

Publication number Publication date
US5639316A (en) 1997-06-17
KR100204082B1 (ko) 1999-06-15
JP3306740B2 (ja) 2002-07-24
JPH08236708A (ja) 1996-09-13
KR960030330A (ko) 1996-08-17
TW359861B (en) 1999-06-01
EP0725428A3 (fr) 1997-12-10
EP0725428A2 (fr) 1996-08-07

Similar Documents

Publication Publication Date Title
US5625233A (en) Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
Nicolet Diffusion barriers in thin films
KR100187601B1 (ko) 반도체장치 및 그 제조방법
US5053917A (en) Thin film capacitor and manufacturing method thereof
US5796166A (en) Tasin oxygen diffusion barrier in multilayer structures
JPH0819516B2 (ja) 薄膜状のアルファＴａを形成するための方法および構造
JPH03214717A (ja) 電気的セラミック酸化物装置用電極
Jang et al. Tantalum and niobium as a diffusion barrier between copper and silicon
US6682995B2 (en) Iridium conductive electrode/barrier structure and method for same
JP2002530862A (ja) 水素ダメージを受けた強誘電体膜の不活性ガス回復アニーリング
EP0558176A1 (fr) Anti-fusible du type métal-à-métal comprenant une couche de barrière améliorée contre la diffusion
US5104848A (en) Device and method of manufacturing a device
KR20030020986A (ko) 스퍼터링 타겟
US6239492B1 (en) Semiconductor structure with a titanium aluminum nitride layer and method for fabricating same
EP0370387A2 (fr) Matériau supraconducteur
Murarka et al. Copper interconnection schemes: elimination of the need of diffusion barrier/adhesion promoter by the use of corrosion-resistant low-resistivity-doped copper
EP0336505B1 (fr) Dispositif et procédé pour la réalisation d'un dispositif
JP2930102B2 (ja) 半導体装置用配線構造及びその製造方法
JPH1079388A (ja) 半導体装置及びその製造方法
JP2751864B2 (ja) 酸素拡散バリア性電極とその製造方法
KR19990059074A (ko) 반도체 소자의 금속 배선 형성 방법
JPH08293581A (ja) 強誘電体薄膜キャパシタ
KR0144167B1 (ko) 확산 배리어의 기능을 갖는 반도체 소자의 전극형성방법
JPH08264481A (ja) 拡散バリヤ機能を有する半導体素子の電極形成方法
JPH06188366A (ja) 半導体集積回路用受動素子の製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: IBM CORPORATION, NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CABRAL, CYRIL, JR.;COLGAN, EVAN GEORGE;GRILL, ALFRED;REEL/FRAME:007325/0653

Effective date: 19950113

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20050429