WO1994000855A1 - Thermistance a coefficient de temperature positif et procede de realisation - Google Patents

Thermistance a coefficient de temperature positif et procede de realisation Download PDF

Info

Publication number
WO1994000855A1
WO1994000855A1 PCT/JP1993/000808 JP9300808W WO9400855A1 WO 1994000855 A1 WO1994000855 A1 WO 1994000855A1 JP 9300808 W JP9300808 W JP 9300808W WO 9400855 A1 WO9400855 A1 WO 9400855A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermistor
electrode
electrodes
positive
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1993/000808
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Inagaki
Hiroshi Sasaki
Takuji Okumura
Masatoshi Tamura
Tadamasa Nishiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Publication of WO1994000855A1 publication Critical patent/WO1994000855A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient

Definitions

  • the present invention relates to a positive temperature coefficient thermistor and a method of manufacturing the same, and more particularly, to a structure of the electrode and a method of forming the electrode. Background technology
  • PTC thermistor can adjust the area with a large positive temperature coefficient by adding Sr, Pb, etc. to measure the temperature, prevent overcurrent, start the motor, turn off the color TV. It is indispensable in a wide range of fields such as surface elements for magnets and low-temperature heaters.
  • such a PTC thermistor sinters oxides, carbonates, nitrates, or chlorides of metals such as Ba, Ti, d, etc. to form a thin circle.
  • the second electrode layers 23 a and 23 b mainly composed of Ag are provided.
  • the PTC thermistor is usually used by applying a voltage between the second electrode layers 23a and 23b. At this time, the Ag in the second electrode layer is moved in the direction of the electric field. So-called migration phenomenon (hereinafter referred to as migration) occurs.
  • migration occurs.
  • the outer peripheral edge of the second electrode layers 23a and 23b is configured to reach the outer peripheral end of the thermistor main body 21, the electric field is generated at the outer peripheral end of the thermistor main body 21.
  • the outer diameter (W) of the second electrode layers 23a and 23b is formed smaller than the outer diameter (V) of the first electrode layers 22a and 22b.
  • PTC thermistors have been proposed.
  • the outer diameter of the second electrode layers 23a and 23b is smaller than the outer diameter of the first electrode layers 22a and 22b.
  • the portions of a and 22b directly exposed to the atmosphere are easily oxidized, and the contact resistance gradually increases.
  • the migration of Ag is a phenomenon that moves along the direction of the electric field, and although a little, Ag diffuses through the first electrode layers 2a and 22b. The problem of short-circuiting is mitigated but cannot be completely prevented.
  • electrodes are formed by using a Ni plating method. When performing this Ni plating, the plating solution may penetrate into the sintered body and change the characteristics of the sintered body, such as a decrease in the resistance value.
  • a method has been proposed in which a low-melting-point metal layer such as A1 is formed by a metal spraying method and used as an electrode.
  • this method also involves a rapid temperature change at the time of electrode formation, so that the problem that cracks occur in the thermistor body or the electrode itself cannot be avoided.
  • the present invention focuses on such conventional problems, and can prevent a short-circuit accident due to migration of Ag, and can control high-precision resistance value control with little change with time of the initial resistance value and large inrush power.
  • the first aspect of the present invention is a thermistor main body composed of a semiconductor having a positive characteristic and a first electrode formed by A1 printing mainly composed of A1.
  • the second electrode is to provide a thermistor body made of a semiconductor having a positive characteristic, and an electron beam evaporation of one of A 1, Ni, Cu, Cr, Ti or an alloy thereof. (Hereinafter, referred to as EB deposition).
  • a third aspect of the present invention there is provided a method for manufacturing a thermistor from a thermistor main body and an electrode, the second electrode being formed by A1 printing containing A1 as a main component in addition to the above-described configuration.
  • a fourth aspect of the present invention is to print an AI paste containing A1 as a main component on the upper and lower surfaces of a thermistor body made of a semiconductor having a positive characteristic, and then sinter the A1 paste to form a second paste.
  • the first electrode or the second electrode is formed.
  • a fifth aspect of the present invention is to provide any one of Al, Ni, C ⁇ , Cr, Ti or an alloy thereof on the upper and lower surfaces of a thermistor body made of a semiconductor having positive characteristics.
  • the first electrode is formed by EB evaporation.
  • an A paste containing A 1 as a main component is printed, and after printing, the A paste is baked to form a second electrode.
  • the present inventors have confirmed that in a PTC thermistor provided with an electrode made of A1, no migration occurs even when a voltage is applied. Therefore, in the present invention, A] is used for the first electrode or the second electrode to prevent a short circuit accident of the positive temperature coefficient thermistor.
  • the first electrode or the second electrode uses AI printing or an EB vapor-deposited film, the thermistor body does not crack or crack, so that the durability is improved more than five times.
  • the initial resistance value does not change with time, high-precision resistance value control is possible.
  • the electrode structure in which A 1 is printed on the A 1 EB deposited film has a high withstand voltage against a large inrush power. Therefore, by using the first electrode when the applied voltage is low, and further using the second electrode when the applied voltage is high, migration can be completely prevented and a highly durable positive characteristic thermistor can be obtained. You can get a star.
  • the first electrode is formed so as to be located at the same position as the outer periphery of the second electrode, oxidation of the first electrode can be prevented.
  • the first electrode or the second electrode having good adhesion and low contact resistance can be formed by printing A 1 or employing the EB vapor deposition method.
  • FIG. 1 is an overall configuration diagram showing an embodiment of a positive temperature coefficient thermistor of the present invention
  • FIGS. 2A, 2B, and 2A are diagrams showing a manufacturing process of the positive temperature coefficient thermistor of the present invention
  • FIG. FIG. 4 is a diagram showing the appearance of a conventional PTC thermistor element
  • FIG. 4 is a view showing the appearance of another conventional PTC thermistor element.
  • FIG. 1 is an overall configuration diagram of a positive characteristic thermostat showing an example of a case where the device is used when an applied electric field is high.
  • This positive temperature coefficient thermistor is composed of a first thermistor body 11 mainly composed of barium titanate, and a first body in which Ni, Cu, or A1 is formed on the upper and lower surfaces by EB evaporation. Electrodes 1 2a, 1 2b and A on the first electrode The second electrodes 13 a and 13 b each having 1 as a main component.
  • FIG. 2A to 2C are process diagrams showing the steps of manufacturing the thermistor according to the embodiment of the present invention.
  • the surface roughness of the upper surface and lower surface (electrode formation surface) of the thermistor body 11 is measured using a surface roughness meter.
  • the surface roughness is 6.3 to 1.6 s (JIS standard triangle symbol ⁇ ) and when the surface roughness is 0.8 s (JIS standard triangle symbol ⁇ ) It is divided into the above cases.
  • a first electrode 12 a composed of a thin film of Ni, Cu, or A] having a thickness of 0.1 to 10 m is formed on the upper and lower surfaces by EB vapor deposition. , Forming 1 2b.
  • the film forming conditions may be as follows.
  • a second electrode 13a containing A1 as a main component (A1 contains about 50% by volume ratio) is formed on the upper layer of the first electrodes 12a and 12b. > 1 3b.
  • A1 paste mainly composed of A1 is printed.
  • drying and baking were performed after printing c.
  • the film thickness was 10 m, and the drying was baking at 12 O'C for 5 minutes.
  • Formation temperature The temperature was raised to 640 in 30 minutes, kept at 640 ° C for 5 minutes, and then carried out by natural cooling. In this step, the following should be performed.
  • the resistance ( ⁇ cm) of the thin film after EB deposition was measured for each of seven positive characteristic thermistors of No. 1 to 4. Table 1 shows the obtained results. table 1
  • Inrush current value (A pp) Ampere peak for each of 7 positive characteristic thermistors N 0.1 to 4 by the measurement circuit (voltage: 220 V rms, frequency: 50 Hz, resistance: 12 ⁇ ) The to peak was measured and was as follows.
  • the minimum value is 22.3 to the maximum value of 24.8, and in the case of Ni of A No. 2 — A 1, the minimum value is 2. 0 to the maximum value 23.7, and the Cu of No. 3 is the minimum value for AI 18.5 to the maximum value 20.8, and the Ni of the No. 4 is Ni—Ag In the case, the minimum value was 22.1 to the maximum value 23.0. From this result, it can be seen that a high inrush current value was obtained in the case of A 1 —A I of No. 1.
  • No. 1 to 3 can obtain the current displacement point (3.30 mA, 3.32 mA, 3.44 mA) at a voltage of 450 V to 500 V, and all of them have the same values as the conventional No. 4 (3.15 mA). It can be seen that almost the same performance was obtained.
  • a confirmation test was performed by an intermittent energization test of the migration.
  • an operation of applying a voltage of 220 V for one minute and then spraying water for five minutes was defined as one cycle, and this operation was repeated to confirm the number of cycles at which migration occurred.
  • a 1 —A 1 of No 1, no short circuit occurred even in 1000 cycles.
  • Ni, Ag of No, 4 a short circuit occurred in 100000 to 2000 cycles. From these results, it can be seen that the positive characteristic thermistor of A 1 —A 1 of N 0,1 can prevent short circuit accident.
  • the first electrodes 12a, 12b or the second electrodes 13a, 13b are fully covered up to the end surface of the thermistor body 11, but the first electrodes 12a, The 12b or the second electrodes 13a and 13b may be located inside the outer peripheral end of the thermistor body 11 and the outer circumferences thereof may be aligned and coated at the same position.
  • the first electrodes 12a and 12b or the second electrodes 13a and 13b may be coated inside the outer peripheral end of the thermistor body 11 and by shifting their outer peripheral edges. it can.
  • Al, Ni, Cu, as the first electrodes 12a, 12b are shown, Cr, Ti, which can be EB deposited and have good compatibility with A1, are shown. Can also be used.
  • the present invention can prevent short-circuit accidents due to migration of Ag, minimize changes in the initial resistance with time, and achieve high-precision resistance control and high withstand voltage against large inrush power.
  • it is useful as a highly durable positive temperature coefficient thermistor.
  • an electrode having high adhesion and low contact resistance can be formed, which is useful as a method for manufacturing a PTC thermistor with high productivity.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

Thermistance conçue de manière à prévenir toute défaillance par court-circuit imputable à une migration d'Ag. La résistance peut être réglée de manière précise et sa longévité est élevée. L'invention porte également sur le procédé de réalisation à haut rendement d'une telle thermistance à haut degré de fiabilité. Cette thermistance comporte un élément principal (11) réalisé à partir d'un semi-conducteur ayant un coefficient de résistance positif de température, et une première série d'électrodes (12a et 12b) ou une deuxième série d'électrodes (13a et 13b) réalisés par impression d'Al en utilisant comme composant principal un matériau contenant de ce métal. De même, une pâte renfermant de l'Al comme composant principal est imprimée sur la face supérieure et sur la face inférieure de l'élément principal de la thermistance (11), puis cette pâte est brûlée pour former la première série d'électrodes (12a et 12b) ou la deuxième série d'électrodes (13a et 13b).
PCT/JP1993/000808 1992-06-23 1993-06-16 Thermistance a coefficient de temperature positif et procede de realisation Ceased WO1994000855A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4/188673 1992-06-23
JP4188673A JPH065403A (ja) 1992-06-23 1992-06-23 正特性サーミスタおよびその製造方法

Publications (1)

Publication Number Publication Date
WO1994000855A1 true WO1994000855A1 (fr) 1994-01-06

Family

ID=16227850

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1993/000808 Ceased WO1994000855A1 (fr) 1992-06-23 1993-06-16 Thermistance a coefficient de temperature positif et procede de realisation

Country Status (2)

Country Link
JP (1) JPH065403A (fr)
WO (1) WO1994000855A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0749132A4 (fr) * 1994-03-04 1997-05-14 Komatsu Mfg Co Ltd Thermistor a coefficient positif de temperature

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015115422A1 (ja) * 2014-01-28 2017-03-23 日立金属株式会社 Ｐｔｃ素子および発熱モジュール
CN106205911B (zh) * 2016-08-30 2020-01-21 肇庆鼎晟电子科技有限公司 一种防短路的热敏芯片及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110201A (en) * 1980-02-05 1981-09-01 Nippon Denso Co Method of forming positive temperature coefficient porcelain semiconductor
JPS59220901A (ja) * 1983-05-31 1984-12-12 株式会社村田製作所 セラミツク電子部品の電極形成方法
JPS6395605A (ja) * 1986-10-13 1988-04-26 松下電器産業株式会社 感温抵抗器の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110201A (en) * 1980-02-05 1981-09-01 Nippon Denso Co Method of forming positive temperature coefficient porcelain semiconductor
JPS59220901A (ja) * 1983-05-31 1984-12-12 株式会社村田製作所 セラミツク電子部品の電極形成方法
JPS6395605A (ja) * 1986-10-13 1988-04-26 松下電器産業株式会社 感温抵抗器の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0749132A4 (fr) * 1994-03-04 1997-05-14 Komatsu Mfg Co Ltd Thermistor a coefficient positif de temperature

Also Published As

Publication number Publication date
JPH065403A (ja) 1994-01-14

Similar Documents

Publication Publication Date Title
US5777541A (en) Multiple element PTC resistor
US5289155A (en) Positive temperature characteristic thermistor and manufacturing method therefor
JPH04333295A (ja) 電歪効果素子およびその製造方法
JP3359522B2 (ja) 積層セラミックコンデンサの製造方法
JP2000150204A (ja) Ｎｔｃサーミスタ及びチップ型ｎｔｃサーミスタ
JPH06151103A (ja) 積層型半導体磁器組成物
JP2001189229A (ja) コンデンサ
JPH02110903A (ja) 抵抗体の製造方法
JPH065403A (ja) 正特性サーミスタおよびその製造方法
JPH0722268A (ja) チップ型電子部品
JPH07297008A (ja) 正特性サーミスタおよびこれを用いたサーミスタ装置
JP3580391B2 (ja) 導電性チップ型セラミック素子の製造方法
JPH0547508A (ja) 積層型半導体磁器及びその製造方法
JP3289354B2 (ja) 正の抵抗温度特性を有する積層型半導体磁器
JPH0714702A (ja) 正の抵抗温度特性を有する積層型半導体磁器
WO1992009993A1 (fr) Procede de fabrication d'un thermistor a caracteristique positive
JP3524298B2 (ja) 積層セラミックコンデンサの外部電極の形成方法
JP2000100605A (ja) 積層型半導体セラミック素子
EP0749132A1 (fr) Thermistor a coefficient positif de temperature
JP2001291604A (ja) チップ形積層サーミスタ及びその製造方法
JPH04317302A (ja) 正特性サーミスタ及びその製造方法
JP4109348B2 (ja) 電子部品とその製造方法
JP3240689B2 (ja) 積層型半導体磁器組成物
JPS61105804A (ja) サ−ミスタ素子及びその製造方法
JP2960099B2 (ja) タンタルコンデンサ用リード線

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): DE GB NL US

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642