WO2001069658A3 - Element antifusible programmable une seule fois et procede associe - Google Patents

Element antifusible programmable une seule fois et procede associe Download PDF

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Publication number
WO2001069658A3
WO2001069658A3 PCT/US2001/007175 US0107175W WO0169658A3 WO 2001069658 A3 WO2001069658 A3 WO 2001069658A3 US 0107175 W US0107175 W US 0107175W WO 0169658 A3 WO0169658 A3 WO 0169658A3
Authority
WO
WIPO (PCT)
Prior art keywords
fuse element
time programmable
programmable anti
present
creating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/007175
Other languages
English (en)
Other versions
WO2001069658A2 (fr
Inventor
Todd Mitchell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Philips Semiconductors Inc
Original Assignee
Koninklijke Philips Electronics NV
Philips Semiconductors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Semiconductors Inc filed Critical Koninklijke Philips Electronics NV
Priority to EP01918392A priority Critical patent/EP1208597A2/fr
Priority to JP2001567025A priority patent/JP2003526941A/ja
Publication of WO2001069658A2 publication Critical patent/WO2001069658A2/fr
Publication of WO2001069658A3 publication Critical patent/WO2001069658A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un procédé et un système servant à produire un élément antifusible programmable une seule fois, qui, contrairement aux éléments actuels, ne comporte pas de silicium amorphe. On utilise plutôt un masque de blocage de gravure d'espaceur de parois latérales pour former une polydiode servant d'élément antifusible programmable une seule fois. En particulier, le procédé de production de l'élément antifusible programmable une seule fois comprend des étapes de flux de production standard existants généralement utilisées dans la fabrication d'un dispositif semi-conducteur standard tel qu'un transistor. Ces étapes peuvent être mises en oeuvre simultanément au flux de production d'un dispositif semi-conducteur standard. De manière avantageuse, la production de cette polydiode comme élément antifusible programmable une seule fois ne perturbe pas le flux de production existant. De plus, un courant polarisé dans le sens direct peut être amené par la polydiode afin de la détruire (« griller ») comme élément programmable une seule fois. Comme avantage supplémentaire par rapport à des éléments antifusibles grillés actuels, l'élément antifusible grillé est plus difficile à détecter. De manière avantageuse, l'élément antifusible de l'invention convient bien pour des applications de sécurité.
PCT/US2001/007175 2000-03-13 2001-03-06 Element antifusible programmable une seule fois et procede associe Ceased WO2001069658A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01918392A EP1208597A2 (fr) 2000-03-13 2001-03-06 Element antifusible programmable une seule fois et procede associe
JP2001567025A JP2003526941A (ja) 2000-03-13 2001-03-06 一回限りプログラム可能なアンチヒューズ素子およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52426200A 2000-03-13 2000-03-13
US09/524,262 2000-03-13

Publications (2)

Publication Number Publication Date
WO2001069658A2 WO2001069658A2 (fr) 2001-09-20
WO2001069658A3 true WO2001069658A3 (fr) 2002-03-14

Family

ID=24088462

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/007175 Ceased WO2001069658A2 (fr) 2000-03-13 2001-03-06 Element antifusible programmable une seule fois et procede associe

Country Status (3)

Country Link
EP (1) EP1208597A2 (fr)
JP (1) JP2003526941A (fr)
WO (1) WO2001069658A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2336598C2 (ru) * 2003-03-13 2008-10-20 Инеко, Инк. Твердотельный преобразователь энергии (варианты) и способ преобразования тепловой энергии в электрическую или электрической в холод (варианты)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2382220A (en) * 2001-11-20 2003-05-21 Zarlink Semiconductor Ltd Polysilicon diode antifuse

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573292A (en) * 1980-06-10 1982-01-08 Nec Corp Semiconductor storage device
EP0468136A2 (fr) * 1990-04-02 1992-01-29 National Semiconductor Corporation Structures de contact pour dispositifs semi-conducteurs et leur méthode de fabrication
US5242851A (en) * 1991-07-16 1993-09-07 Samsung Semiconductor, Inc. Programmable interconnect device and method of manufacturing same
JPH09116108A (ja) * 1995-10-20 1997-05-02 Nissan Motor Co Ltd 半導体記憶装置
US5905670A (en) * 1997-05-13 1999-05-18 International Business Machines Corp. ROM storage cell and method of fabrication
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573292A (en) * 1980-06-10 1982-01-08 Nec Corp Semiconductor storage device
EP0468136A2 (fr) * 1990-04-02 1992-01-29 National Semiconductor Corporation Structures de contact pour dispositifs semi-conducteurs et leur méthode de fabrication
US5242851A (en) * 1991-07-16 1993-09-07 Samsung Semiconductor, Inc. Programmable interconnect device and method of manufacturing same
JPH09116108A (ja) * 1995-10-20 1997-05-02 Nissan Motor Co Ltd 半導体記憶装置
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
US5905670A (en) * 1997-05-13 1999-05-18 International Business Machines Corp. ROM storage cell and method of fabrication

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 006, no. 062 (P - 111) 21 April 1982 (1982-04-21) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 09 30 September 1997 (1997-09-30) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2336598C2 (ru) * 2003-03-13 2008-10-20 Инеко, Инк. Твердотельный преобразователь энергии (варианты) и способ преобразования тепловой энергии в электрическую или электрической в холод (варианты)

Also Published As

Publication number Publication date
EP1208597A2 (fr) 2002-05-29
WO2001069658A2 (fr) 2001-09-20
JP2003526941A (ja) 2003-09-09

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