WO2003100848A1 - Dispositif et procede de traitement de substrats - Google Patents

Dispositif et procede de traitement de substrats Download PDF

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Publication number
WO2003100848A1
WO2003100848A1 PCT/JP2003/006454 JP0306454W WO03100848A1 WO 2003100848 A1 WO2003100848 A1 WO 2003100848A1 JP 0306454 W JP0306454 W JP 0306454W WO 03100848 A1 WO03100848 A1 WO 03100848A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
carrier
chamber
substrate processing
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/006454
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English (en)
Japanese (ja)
Inventor
Hitoshi Nakagawara
Seiichi Igawa
Yoshifumi Unehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to AU2003242422A priority Critical patent/AU2003242422A1/en
Priority to KR1020047014556A priority patent/KR100951337B1/ko
Priority to JP2004508403A priority patent/JP4369866B2/ja
Publication of WO2003100848A1 publication Critical patent/WO2003100848A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/07—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers Not used, see H10P72/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece

Definitions

  • the present invention relates to a substrate processing apparatus and a processing method for continuously transporting a carrier on which a substrate is mounted to a processing chamber and performing a predetermined process, and particularly relates to a processing chamber attributable to the carrier moving between the processing chamber and the atmosphere.
  • the present invention relates to a substrate processing apparatus and a processing method capable of solving the problem of atmospheric pollution and stably performing high quality thin film formation and etching. Background art
  • FIG. 7 As a conventional example of a substrate processing apparatus, a production vapor deposition apparatus shown in FIG. 7 will be described.
  • the load lock chamber 10 for carrying in the carrier the heating chamber 70, the vapor deposition chamber 30 and the load lock chamber for carrying out the carrier 10 'are gate valves 41 ⁇ .
  • Each room is provided with a transport unit 4 for a carrier 2.
  • the transport unit 4 is preferably configured such that a row of a large number of transport ports is provided, and a carrier mounted on the roller row is moved by rotating the rollers by a drive system.
  • the substrate 3 Used for The substrate 3 is mounted on the carrier 2 in the atmosphere, the carrier 2 is transferred from the load lock chamber 10 to the heating chamber 70, and the substrate is heated to a predetermined temperature, and then sent to the vapor deposition chamber 30 to form a thin film. Thereafter, the carrier 2 is sent out to the load lock chamber 10 'and taken out into the atmosphere. After the processed substrate 3 ′ is recovered, the unprocessed substrate 3 is mounted on the carrier 2 again, and returned to the load lock chamber 10. By repeating these operations, thin films can be continuously formed on many substrates. In this conventional method, the carrier 2 for transporting the substrate is repeatedly transported between the atmosphere and the vacuum.
  • M g O film obtained is to indicate Suyo the X-ray diffraction pattern of FIG. 9 It was found that the (1 1 1) plane had a (2 0 0) plane and a (2 2 0) plane. Since the secondary electron emission coefficient of the MgO film differs depending on the crystal plane, if the crystal planes coexist, brightness unevenness occurs and the display performance of the PDP is greatly reduced. Therefore, to stably obtain a high-performance display performance, should Ru maintaining the partial pressure of water vapor deposition chamber to below 3 X 1 0- 4 P a.
  • Japanese Patent Application Laid-Open No. Hei 9-27-9741 proposes a vapor deposition apparatus which solves the above-mentioned problem of peeling off the adhered film and the problem of taking in moisture and the like into the vapor deposition chamber.
  • a load lock chamber 10 for loading a substrate a deposition chamber 30 and a load lock chamber 10 for unloading a substrate are connected by gate valves 41 and 42.
  • the deposition chamber 30 transports the substrate 3 from the load lock chamber 10 to the carrier (tray) 2.
  • the carrier 2 is configured to circulate between the mounting section, the vapor deposition section, and the collection section, and is not exposed to the atmosphere. That is, the substrate 3 is in the load lock chamber 10 After being carried in, it is mounted on the carrier (tray) 2 of the substrate mounting portion 31 by the transport unit 4 composed of the above-described transport roller row, is sent to the vapor deposition portion 32, and is heated by a heating mechanism (not shown). The MgO film is formed by being heated to a predetermined temperature. Thereafter, the carrier 2 is transported to the substrate collecting section 33, the processed substrate 3 'is removed from the carrier 2, and only the substrate is taken out to the load lock chamber 10'. On the other hand, the carrier 2 is returned to the substrate mounting section 31 along the upper transport path.
  • the carrier is always conveyed in a vacuum, so that the adhered film does not come into contact with the atmosphere, greatly suppressing the generation of particles and suppressing the incorporation of moisture and the like. It was found that a homogeneous MgO film with a crystal plane could be formed, and that it could be used for a high-performance PDP. Disclosure of the invention
  • the film adheres to the carrier and causes the same problem as described above. Conversely, if the mask opening is small, the vapor deposition material wraps around and deposits on the outer peripheral portion of the substrate. Therefore, it was found that there was a problem that the film thickness was thin and the crystal planes were mixed, resulting in uneven brightness.
  • the present invention is directed to a substrate processing apparatus and a processing method capable of suppressing contamination of the atmosphere in a processing chamber through a carrier and continuing stable substrate transfer and high-quality substrate processing. It is an object of the present invention to provide a highly versatile substrate processing apparatus and a processing method that can cope with an ever-larger substrate and that can cope with various substrate dimensions.
  • the substrate processing apparatus of the present invention performs a predetermined process on a substrate, a load lock chamber for loading a carrier with a substrate mounted thereon, a substrate transfer chamber having a transfer mechanism for transferring a substrate between carriers.
  • a substrate processing apparatus comprising: a first carrier that moves between the load port chamber and the substrate transfer chamber; and a substrate that moves between the substrate transfer chamber and the substrate processing chamber.
  • a first carrier and the second carrier, wherein the first carrier and the second carrier are Wherein the substrate is transferred between carriers. Further, the first carrier on which the processed substrate is mounted is carried out to the door lock chamber.
  • the carrier holding the substrate during film formation does not need to be exposed to the air, so that the thin film resulting from moisture or the like adsorbed and occluded on the carrier-adhered film in the air and brought into the deposition chamber is prevented.
  • Nonuniform film quality and film peeling can be greatly reduced, and a high-quality thin film without defects can be continuously produced on many substrates.
  • the transfer mechanism includes a carrier holding mechanism having a plurality of carrier holders and two carrier holding mechanisms that can be interchanged with each other, and the carrier is moved between the holders of the two carrier holding mechanisms. And a mobile mechanism to be operated.
  • the carrier is moved between the two holding mechanisms while holding the substrate from the first and second carriers on the holding table by the holding mechanism, and the substrate is placed on the carrier again in that state. By doing so, the substrate can be transferred.
  • the apparatus area can be significantly reduced as compared with the transfer method using a robot or the like, a large cost reduction can be achieved for the entire substrate processing apparatus.
  • a vacuum suction or electrostatic suction mechanism as the substrate holding mechanism. Since this holding mechanism can hold the substrate from the back side, it can hold not only large-sized substrates but also substrates of various sizes without contaminating or flawing the film deposition surface on the surface. The substrate can be easily and reliably transferred between carriers.
  • the substrate transfer chamber is maintained in a dry gas atmosphere.
  • a dry gas atmosphere For example, N 2 gas is used.
  • the carrier supports four sides of the substrate, so that even if the substrate is enlarged, the radius of the substrate can be suppressed and a uniform thin film can be formed on the entire surface. Further, the present invention is particularly suitably used for forming a film having high hygroscopicity such as a MgO film.
  • the substrate processing method of the present invention comprises: a load lock chamber for carrying in and out a carrier on which a substrate is mounted; a substrate transfer chamber for transferring a substrate between carriers; a substrate processing chamber for performing a predetermined process on the substrate; A first carrier that moves between the load lock chamber and the substrate transfer chamber, and a second carrier that moves between the substrate transfer chamber and the substrate processing chamber.
  • the substrate is transferred between the first carrier and the second carrier, and the second carrier carried into and out of the substrate processing chamber is continuously exposed without being exposed to the atmosphere. It is characterized in that substrate processing is performed.
  • the transfer mechanism includes two carrier holding mechanisms each having a plurality of carrier holding bases and can be interchanged with each other, and a holding base of the two carrier holding mechanisms.
  • FIG. 1 is a schematic diagram illustrating a basic configuration example of a substrate processing apparatus of the present invention.
  • FIG. 2 is a schematic diagram illustrating a configuration of an MgO film deposition apparatus for a PDP.
  • FIG. 3 is a schematic diagram illustrating transfer of a substrate.
  • FIG. 4 is an X-ray diffraction diagram showing the crystal orientation of the MgO film formed according to the present invention.
  • FIG. 5 is a schematic diagram illustrating another configuration example of the vapor deposition apparatus.
  • FIG. 6 is a schematic diagram illustrating another configuration example of the substrate processing apparatus.
  • FIG. 7 is a schematic diagram illustrating the configuration of a conventional vapor deposition apparatus.
  • FIG. 8 is a graph showing the relationship between the number of produced film deposition substrates and the water pressure.
  • FIG. 9 is an X-ray diffraction diagram showing the crystal orientation of the MgO film formed by the conventional apparatus.
  • FIG. 10 is a schematic diagram showing a conventional example of a vapor deposition apparatus in which the influence of moisture in the atmosphere is suppressed.
  • 1, 1 'and 2 indicate carriers, 3 and 3' are substrates, 4 is a transport unit, 5 is a substrate transfer mechanism, 6 is a robot, 10 and 10 'are load lock chambers, 20 is a substrate transfer chamber, 21 and 22 are carrier holding mechanisms, 23 is a substrate holding mechanism, 30 is a processing chamber, 34 is a storage hearth for MgO, 35 is vapor deposition means, 40 46 to 46 indicate a gate valve, 50 indicates a first auxiliary chamber, 60 indicates a second auxiliary chamber, 70 indicates a first heating chamber, and 80 indicates a second heating chamber.
  • FIG. 1 The schematic configuration of the substrate processing apparatus of the present invention is shown in FIG.
  • the substrate processing apparatus has a structure in which a load lock chamber 10, a substrate transfer chamber 20 and a processing chamber 30 are connected via gate valves 41 and 42.
  • the first carrier 1 moves between the lock chamber 10 and the substrate transfer chamber 20 to transfer the substrate
  • the second carrier 1 ′ moves between the substrate transfer chamber 20 and the processing chamber 30.
  • the substrate transfer chamber 20 is N
  • the substrate transfer mechanism 5 is installed in a dry gas atmosphere such as a gas or in a vacuum.
  • the substrate 3 is mounted on the first carrier 1 in the air, loaded into the load lock chamber 10 and evacuated (after the substrate transfer chamber is filled with N 2 gas if the substrate transfer chamber has an N 2 gas atmosphere).
  • the gate valve 41 is opened and sent to the substrate transfer chamber 20.
  • the substrate transfer chamber 20 the substrate 3 is transferred from the first carrier 1 to the second carrier 1 'by the substrate transfer mechanism 5, and the second carrier 1' on which the substrate 3 is mounted is processed. After being sent to the chamber 30 and subjected to predetermined processing, it is returned to the substrate transfer chamber 20.
  • the processed substrate 3 ′ is transferred from the second carrier 1 ′ to the first carrier 1, and the first carrier 1, is taken out to the atmosphere via the load lock chamber 10 and processed.
  • the finished substrate 3 ′ and the unprocessed substrate 3 are exchanged and returned to the load lock chamber 10 again.
  • the second carrier entering the processing chamber 30 does not come into contact with the atmosphere, and the substrates 3 and 3 'are always transported by the carrier. Processing can be repeated and continued.
  • FIG. 2 is a schematic configuration diagram of a vapor deposition apparatus in which the method of manufacturing an MgO film according to the present invention is performed
  • FIG. 3 is a schematic diagram illustrating an example of a method of transferring a substrate in a substrate transfer chamber.
  • the load lock chamber 10 the first auxiliary chamber 50, the substrate transfer chamber 20, the second auxiliary chamber 60, the first heating chamber 70, the vapor deposition chamber 30, and the carrier transfer direction It is composed of a second heating chamber 80 that converts and also heats the substrate.
  • Gate valves 41 to 46 are provided between the chambers.
  • Each of the first and second heating chambers is provided with a heating mechanism (not shown) for heating the substrate to a predetermined temperature.
  • the load lock chamber 10, the first auxiliary chamber 50, the second auxiliary chamber 60, the first heating chamber 70, and the vapor deposition chamber 30 have an upper part for transporting carriers in the right direction in the drawing.
  • a transport unit and a lower transport unit for transporting leftward are arranged respectively.
  • Each transport unit 4 includes, for example, two rows of transport rollers described in Japanese Patent Application Laid-Open No. Hei 9-2793941, and is mounted on the opening by rotating the rollers by a drive system.
  • a structure in which the transported carrier is transported is preferably used.
  • one transfer unit is attached to the second heating chamber 80 so as to be vertically movable, so that the carrier can be moved from the upper transfer path to the lower transfer path.
  • the mechanism described in Japanese Patent Application Laid-Open No. Hei 9-2797341 is preferably used as the mechanism for moving the transfer unit up and down, and the transfer unit is moved up and down by a cylinder, for example, through a bellows. A structure is used.
  • the above-described transport unit 4 serving as a carrier holding shelf is stacked in two stages, and two sets of carrier holding mechanisms 21 and 22 having a structure of moving up and down are arranged on the left and right.
  • the carrier 1, 1 ' can be moved between the transport units of the two carrier holding mechanisms.
  • the up-down movement mechanism for example, the mechanism described in the above-mentioned Japanese Patent Application Laid-Open No. Hei 9-279349 is used.
  • a substrate holding mechanism 23 including a known suction mechanism for vacuum-sucking the substrate is provided on the top wall of the substrate transfer chamber 20 .
  • An opening is formed in the bottom wall of the vapor deposition chamber 30, and a hearth 34 for accommodating the vapor deposition means (for example, a plasma source manufactured by Chugai Furnace Co., Ltd.) 35 and 1 ⁇ 10 is formed below the opening. Equipped.
  • An oxygen gas introduction mechanism will be installed near the opening to control the film quality.
  • a glass substrate (for example, for a 42-inch television) is placed on a carrier in a horizontal position, and is transported horizontally by a transport system.
  • the transport method is explained below. I will tell.
  • the substrate is held on four sides, and a film is formed on one side (the lower side in this embodiment) of the substrate.
  • the first carrier 1 circulates in the atmosphere between the load lock chamber 10 and the substrate transfer chamber 20, and the second carrier 1 ′ circulates between the substrate transfer chamber 20 and the second heating chamber 80. Circulate.
  • the glass substrate 3 is mounted on the first carrier 1 and carried into the load lock chamber 10.
  • the load lock chamber 1 0 is evacuated to a predetermined pressure (1 0- 5 P a table).
  • the gate valve 41 is opened, and the first carrier 1 is transferred to the first auxiliary chamber 50.
  • the first carrier 1 carried into the first auxiliary chamber 50 is heated to about 150 ° C. by a heating mechanism (not shown) to perform a degassing process. Heating was discontinued and the 1 0- 4 P a stand to reach after drying N 2 gas is introduced to atmospheric pressure.
  • the second carrier 1 ′ on which the processed substrate 3 ′ is mounted is on standby on the lower transfer unit of the second auxiliary chamber 60, and N 2 gas is introduced into the room.
  • the substrate transfer chamber is filled with N 2 gas atmosphere pressure.
  • the gate valve 42 is opened, and the first carrier 1 is transferred to the upper shelf of the first carrier holding mechanism 21 of the substrate transfer chamber 20.
  • the gate valve 43 is opened, and the second carrier 1 ′ on which the substrate 3 on which the film has been formed is mounted is transferred from the second auxiliary chamber 60 to the lower shelf of the second carrier holding mechanism 22 ( b).
  • the vacuum suction mechanism 23 is pushed down by a cylinder (not shown) via a bellows, and comes into contact with each substrate to be sucked in vacuum and then pushed up.
  • the first and second carrier holding mechanisms 2 1 , 22 are moved to the same height, the transport rollers are rotated, and the first and second carriers are moved to the opposite units of the carrier holding mechanism, respectively (c).
  • the vacuum suction means 23 is pushed down again, and the processed substrate 3 'force S is mounted on the first carrier 1 and the unprocessed substrate 3 is mounted on the second carrier 1' (d).
  • the first and second carriers move to the opposite units, respectively (e).
  • the first and second carrier holding mechanisms move up and down, the gate valves 42 and 43 are opened, and the first carrier 1 is transferred to the lower transport unit of the first auxiliary chamber 50 and the second carrier 1 'is sent to the upper transfer unit of the second auxiliary chamber 60 (f).
  • a gate valve 44 is opened, the second carrier is conveyed into the first heating chamber 7 0.
  • heating is performed up to 300 ° C. by a heating mechanism (not shown).
  • the gate valve 45 is opened, and the second carrier is sent to the second heating chamber 80 through the vapor deposition chamber 30 and is heated for a predetermined time.
  • the transport unit 4 on which the carrier is placed is lowered by, for example, a vertical movement mechanism disclosed in Japanese Patent Application Laid-Open No. 9-979341, and the gate valve 46 is opened again, and The carrier No. 2 moves in the opposite direction to the loading direction and is loaded into the vapor deposition chamber 30.
  • the heating of the substrate is not limited to the above embodiment, and may be performed in the load lock chamber 10 or the second auxiliary chamber.
  • a MgO film is deposited on the substrate 3 mounted on the second carrier 1 'under predetermined film forming conditions. That is, 80 sccm of oxygen gas is introduced into the vapor deposition chamber, and Ar gas is further introduced to a pressure of 0.1 Pa, and the plasma vapor deposition source is driven to deposit an MgO film on the substrate.
  • the second carrier 1 ′ moves the first heating chamber 70 and the second auxiliary chamber 60.
  • the substrate is transferred to the substrate transfer chamber 20 through which the substrate is transferred between the first and second carriers as described above.
  • the processed substrate 3 ′ mounted on the first carrier 1 is transferred to the load lock chamber 10 via the first auxiliary chamber 50. After the introduction into the atmosphere, the first carrier is taken out into the atmosphere, the processed substrate 3 ′ is collected, and the unprocessed substrate 3 is mounted on the first carrier 1 again.
  • the MgO film is continuously deposited on the substrate.
  • the second carrier 1 ′ does not come into contact with the air, so that a MgO film having no defect and having no defect can be stably formed.
  • the X-ray diffraction pattern of the obtained MgO film has a (111) crystal plane as shown in FIG. It has become possible to continuously produce high-performance PDPs.
  • B, A, and C show diffraction patterns at a position 3 cm away from the center of the substrate and the edge of the substrate.
  • FIG. 1 has a configuration in which the carrier is loaded and unloaded in one load lock chamber
  • a configuration in which two load lock chambers are provided and loaded from one side and unloaded from the other may be used.
  • FIG. 5 substrate transfer chambers 20 and 20 and load lock chambers 10 and 10 ′ are arranged on both sides of the processing chamber 30, and the first substrate transfer chamber 20 and the first load lock are provided.
  • Two sets of the first carrier 1 that move between the chamber 10 and the atmosphere, and between the second substrate transfer chamber 20 and the second load lock chamber 10 and the atmosphere, and the first substrate transfer chamber 20
  • a second carrier 1 ′ moving between the processing chamber 30 and the second substrate transfer chamber 20 ′ is arranged.
  • the number and arrangement of the processing chambers and auxiliary chambers of the substrate processing apparatus, and the number of carriers circulating in the substrate processing apparatus at the same time depend on, for example, the tact time in each chamber. What is necessary is just to select suitably.
  • a vacuum suction means is used as a substrate holding mechanism of the substrate transfer chamber, but a known electrostatic suction means is disclosed in Japanese Unexamined Patent Publication No. Heisei 9-2793941. May be used.
  • the substrate transfer mechanism is not limited to the above. For example, two substrate holding mechanisms are mounted around a rotation axis, and after holding the substrates of the first and second carriers, the substrate is rotated 180 °.
  • the configuration may be such that the shaft is rotated and the substrate is placed on the carrier in that state, or the substrate may be transferred by a robot. Further, the case where the substrate is transported and transferred while the substrate is horizontal has been described above. However, the present invention is not limited to this, and a configuration in which the substrate is transported, transferred and processed while the substrate is vertical may be adopted.
  • the in-line type vapor deposition apparatus has been described.
  • the present invention is also applied to, for example, a cluster type vapor deposition apparatus as shown in FIG.
  • the first carrier 1 moves between the load lock chamber 10 and the substrate transfer chamber 20 and the second carrier 1 ′ moves between the substrate transfer chamber 20 and the processing chamber 30 (30). , 30 ").
  • the first and second carrier substrates are transferred by, for example, the robot 6 having two hands.
  • the present invention is not limited to a vapor deposition apparatus, and may be suitably used for an apparatus for producing a Cr oxide film as an exposure blank by a sputtering method, for example, and may be various processing such as etching. It can be applied to equipment.
  • the present invention it is possible to reduce the problem of contamination which has conventionally occurred during the transfer of a substrate, and to form a film of excellent quality with good stability. It is possible to provide an apparatus for producing a hygroscopic dielectric film such as magnesium at a high speed.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif et un procédé de traitement de substrats à usages multiples conçus pour supprimer, au moyen de transporteurs, la contamination de l'atmosphère dans une chambre de traitement, pour assurer de manière continue un transport stable et un traitement de substrat de haute qualité et pour maîtriser des substrats d'augmentation et différents dimensions de substrats. Ce dispositif comprend une chambre de verrouillage de charge dans laquelle sont chargés les transporteurs qui transportent le substrat, une chambre de transfert de substrat comportant un mécanisme de transfert qui permet de transférer le substrat entre les transporteurs, enfin une chambre de traitement de substrat qui permet d'appliquer un traitement spécifique au substrat. Ce dispositif est caractérisé en ce que le premier transporteur se déplace entre la chambre de verrouillage de charge et la chambre de transfert de substrat, le second transporteur se déplace entre la chambre de transfert de substrat et la chambre de traitement de substrat et le substrat est transféré entre le premier transporteur et le second transporteur par le mécanisme de transfert.
PCT/JP2003/006454 2002-05-23 2003-05-23 Dispositif et procede de traitement de substrats Ceased WO2003100848A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003242422A AU2003242422A1 (en) 2002-05-23 2003-05-23 Substrate processing device and substrate processing method
KR1020047014556A KR100951337B1 (ko) 2002-05-23 2003-05-23 기판처리장치 및 처리방법
JP2004508403A JP4369866B2 (ja) 2002-05-23 2003-05-23 基板処理装置及び処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-148690 2002-05-23
JP2002148690 2002-05-23

Publications (1)

Publication Number Publication Date
WO2003100848A1 true WO2003100848A1 (fr) 2003-12-04

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PCT/JP2003/006454 Ceased WO2003100848A1 (fr) 2002-05-23 2003-05-23 Dispositif et procede de traitement de substrats

Country Status (6)

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JP (1) JP4369866B2 (fr)
KR (1) KR100951337B1 (fr)
CN (1) CN1293621C (fr)
AU (1) AU2003242422A1 (fr)
TW (1) TWI232242B (fr)
WO (1) WO2003100848A1 (fr)

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JP2006096498A (ja) * 2004-09-29 2006-04-13 Shimadzu Corp 基板搬送装置およびこれを備える真空処理装置
WO2009130790A1 (fr) * 2008-04-25 2009-10-29 キヤノンアネルバ株式会社 Appareil de formation de film aligné de type à transfert de plateau
JP2010258460A (ja) * 2010-05-10 2010-11-11 Tomoo Matsushita 基板搬送機構および基板搬送方法
WO2013118003A1 (fr) * 2012-02-06 2013-08-15 Roth & Rau Ag Installation de traitement de substrat
JP2020502778A (ja) * 2016-12-14 2020-01-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積システム

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CN1970828B (zh) * 2005-11-26 2010-05-26 鸿富锦精密工业（深圳）有限公司 在模具上形成多层镀膜的方法
JP5036290B2 (ja) * 2006-12-12 2012-09-26 東京エレクトロン株式会社 基板処理装置および基板搬送方法、ならびにコンピュータプログラム
KR101359401B1 (ko) * 2007-06-21 2014-02-10 주성엔지니어링(주) 고효율 박막 태양전지와 그 제조방법 및 제조장치
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WO2012157231A1 (fr) * 2011-05-13 2012-11-22 株式会社ニコン Dispositif de remplacement de substrat
JP5741834B2 (ja) * 2011-05-13 2015-07-01 株式会社ニコン 物体の搬出方法、物体の交換方法、物体保持装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法
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KR20050002862A (ko) 2005-01-10
CN1293621C (zh) 2007-01-03
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