WO2004016829A3 - Solutions de cuivrage electrolytique - Google Patents

Solutions de cuivrage electrolytique Download PDF

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Publication number
WO2004016829A3
WO2004016829A3 PCT/US2003/024747 US0324747W WO2004016829A3 WO 2004016829 A3 WO2004016829 A3 WO 2004016829A3 US 0324747 W US0324747 W US 0324747W WO 2004016829 A3 WO2004016829 A3 WO 2004016829A3
Authority
WO
WIPO (PCT)
Prior art keywords
solutions
copper plating
electrolytic copper
plating solutions
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/024747
Other languages
English (en)
Other versions
WO2004016829A2 (fr
Inventor
Nicholas Michael Martyak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arkema Inc
Original Assignee
Atofina Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atofina Chemicals Inc filed Critical Atofina Chemicals Inc
Priority to CA002465363A priority Critical patent/CA2465363A1/fr
Priority to AU2003259049A priority patent/AU2003259049A1/en
Priority to EP03788347A priority patent/EP1529126A4/fr
Priority to JP2004529271A priority patent/JP2005535787A/ja
Publication of WO2004016829A2 publication Critical patent/WO2004016829A2/fr
Publication of WO2004016829A3 publication Critical patent/WO2004016829A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

L'invention concerne des solutions de cuivrage électrolytique, des procédés permettant d'utiliser ces solutions et des produits formés à l'aide de ces procédés et de ces solutions. Ces solutions contiennent des alcanesulfonates de cuivre et des acides alcanesulfoniques libres, l'acide libre ayant une concentration comprise entre 0,05 et 2,50 M environ. Ces solutions sont destinées à la métallisation de tranchées ou de trous d'interconnexion, de trous débouchants ou de microtrous d'interconnexion de l'ordre du micron.
PCT/US2003/024747 2002-08-16 2003-08-08 Solutions de cuivrage electrolytique Ceased WO2004016829A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA002465363A CA2465363A1 (fr) 2002-08-16 2003-08-08 Solutions de cuivrage electrolytique
AU2003259049A AU2003259049A1 (en) 2002-08-16 2003-08-08 Electrolytic copper plating solutions
EP03788347A EP1529126A4 (fr) 2002-08-16 2003-08-08 Solutions de cuivrage electrolytique
JP2004529271A JP2005535787A (ja) 2002-08-16 2003-08-08 電解銅めっき液

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40395402P 2002-08-16 2002-08-16
US60/403,954 2002-08-16
US10/620,042 2003-07-15
US10/620,042 US20040045832A1 (en) 1999-10-14 2003-07-15 Electrolytic copper plating solutions

Publications (2)

Publication Number Publication Date
WO2004016829A2 WO2004016829A2 (fr) 2004-02-26
WO2004016829A3 true WO2004016829A3 (fr) 2004-04-29

Family

ID=31891409

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024747 Ceased WO2004016829A2 (fr) 2002-08-16 2003-08-08 Solutions de cuivrage electrolytique

Country Status (8)

Country Link
US (1) US20040045832A1 (fr)
EP (1) EP1529126A4 (fr)
JP (1) JP2005535787A (fr)
CN (1) CN1592800A (fr)
AU (1) AU2003259049A1 (fr)
CA (1) CA2465363A1 (fr)
TW (1) TWI285687B (fr)
WO (1) WO2004016829A2 (fr)

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JP2005272874A (ja) * 2004-03-23 2005-10-06 Sumitomo Bakelite Co Ltd 回路基板の製造方法
TW200632147A (fr) 2004-11-12 2006-09-16
JP4704761B2 (ja) * 2005-01-19 2011-06-22 石原薬品株式会社 電気銅メッキ浴、並びに銅メッキ方法
US20060231409A1 (en) * 2005-03-31 2006-10-19 Tdk Corporation Plating solution, conductive material, and surface treatment method of conductive material
JP4764718B2 (ja) * 2005-12-28 2011-09-07 新光電気工業株式会社 スルーホールの充填方法
US7575666B2 (en) * 2006-04-05 2009-08-18 James Watkowski Process for electrolytically plating copper
US20080110759A1 (en) * 2006-11-14 2008-05-15 Tower Semiconductor Ltd. Self Terminating Overburden Free Plating (STOP) Of Metals On Patterned Wafers
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP2009041097A (ja) * 2007-08-10 2009-02-26 Rohm & Haas Electronic Materials Llc 銅めっき方法
PL2103717T3 (pl) * 2008-02-29 2010-07-30 Atotech Deutschland Gmbh Kąpiel oparta na pirofosforanach do nakładania warstw stopów cyny
US10221496B2 (en) 2008-11-26 2019-03-05 Macdermid Enthone Inc. Copper filling of through silicon vias
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
US20120018310A1 (en) 2009-04-07 2012-01-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115756A1 (fr) * 2009-04-07 2010-10-14 Basf Se Composition pour le plaquage de métaux comportant un agent suppresseur de remplissage des fissures submicroniques éliminant les vides
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8962085B2 (en) * 2009-06-17 2015-02-24 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling
TWI465609B (zh) * 2009-07-07 2014-12-21 Furukawa Electric Co Ltd An electrolytic copper film, a method for producing the same, and a copper electrolytic solution for manufacturing a copper electrolytic film
EP2483454A2 (fr) * 2009-09-28 2012-08-08 Basf Se Composition de cuivrage électrolytique
WO2011102276A1 (fr) * 2010-02-22 2011-08-25 Jx日鉱日石金属株式会社 Solution aqueuse de sulfonate de cuivre de grande pureté et son procédé de fabrication
KR101705734B1 (ko) 2011-02-18 2017-02-14 삼성전자주식회사 구리 도금 용액 및 이것을 이용한 구리 도금 방법
US9631292B2 (en) 2011-06-01 2017-04-25 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (fr) 2011-06-01 2012-12-05 Basf Se Additif et composition pour dépôt électrique métallique comportant un additif pour remplissage ascendant de trous traversant le silicium
CN103361694A (zh) * 2013-08-08 2013-10-23 上海新阳半导体材料股份有限公司 一种用于3d铜互连高深宽比硅通孔技术微孔电镀填铜方法
CN104762643A (zh) * 2014-12-17 2015-07-08 安捷利电子科技（苏州）有限公司 一种通孔、盲孔和线路共镀的镀铜药水
US20180298515A1 (en) * 2015-04-27 2018-10-18 Jcu Corporation Method for managing copper sulfate plating solution
CN108174615B (zh) 2015-09-29 2023-02-17 大日本印刷株式会社 布线构造体制造方法、图案构造体形成方法及压印用模具
JP2017222903A (ja) * 2016-06-15 2017-12-21 公立大学法人大阪府立大学 ハロゲンフリーまたは低ハロゲン電解穴埋め銅めっき浴
EP3516096A4 (fr) * 2016-09-22 2020-10-21 MacDermid Enthone Inc. Électrodéposition de cuivre en microélectronique
CN106757191B (zh) * 2016-11-23 2019-10-01 苏州昕皓新材料科技有限公司 一种具有高择优取向的铜晶体颗粒及其制备方法
TWI647342B (zh) * 2017-08-03 2019-01-11 國家中山科學研究院 Copper-silver two-component metal plating liquid for semiconductor wires and plating method
KR102641595B1 (ko) * 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
CN108914171B (zh) * 2018-07-19 2020-05-19 广东工业大学 一种加速铜沉积添加剂及其制备方法和应用
CN110983389B (zh) * 2019-12-31 2020-11-13 广州三孚新材料科技股份有限公司 一种钢铁件无氰碱性电镀铜液及其制备方法
CN113279026B (zh) * 2021-04-25 2022-09-02 厦门理工学院 一种用于铜箔盲孔填孔的药水
CN116856022B (zh) * 2023-07-05 2024-02-20 诺博环保科技(中山)有限公司 一种电镀用合金添加剂及其制备方法

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DE4338148A1 (de) * 1993-11-04 1995-05-11 Atotech Deutschland Gmbh Wäßrige alkansulfonsaure Lösung zur Kupferabscheidung
JPH10310881A (ja) * 1997-05-12 1998-11-24 Toppan Printing Co Ltd 銅系金属材料のエッチング方法
US6605204B1 (en) * 1999-10-14 2003-08-12 Atofina Chemicals, Inc. Electroplating of copper from alkanesulfonate electrolytes

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US2525943A (en) * 1947-09-24 1950-10-17 Standard Oil Co Copper plating bath and process
DE4338148A1 (de) * 1993-11-04 1995-05-11 Atotech Deutschland Gmbh Wäßrige alkansulfonsaure Lösung zur Kupferabscheidung
JPH10310881A (ja) * 1997-05-12 1998-11-24 Toppan Printing Co Ltd 銅系金属材料のエッチング方法
US6605204B1 (en) * 1999-10-14 2003-08-12 Atofina Chemicals, Inc. Electroplating of copper from alkanesulfonate electrolytes

Also Published As

Publication number Publication date
TWI285687B (en) 2007-08-21
AU2003259049A8 (en) 2004-03-03
WO2004016829A2 (fr) 2004-02-26
CN1592800A (zh) 2005-03-09
CA2465363A1 (fr) 2004-02-26
EP1529126A4 (fr) 2006-07-05
TW200415263A (en) 2004-08-16
AU2003259049A1 (en) 2004-03-03
JP2005535787A (ja) 2005-11-24
EP1529126A2 (fr) 2005-05-11
US20040045832A1 (en) 2004-03-11

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